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IDT Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Supply Current-Max | Access Time | Organization | Output Characteristics | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Output Enable | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 71V016SA10YG8 Integrated Device Technology (IDT) | In Stock | - | Datasheet | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | - | 44 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3.15V | 128kB | 1 | 160mA | - | - | - | - | 10 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | - | COMMON | Asynchronous | 16b | - | - | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
 70V3319S133BCI Integrated Device Technology (IDT) | 12 | - | Datasheet | 7 Weeks | Surface Mount | - | - | 256 | 133MHz | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | - | 133MHz | - | 256 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.45V | 3.15V | 512kB | 2 | 480mA | - | - | - | - | 4.2 ns | - | 3-STATE | - | 36b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 18b | - | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
 7009L15PFG8 Integrated Device Technology (IDT) | In Stock | - | Datasheet | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SRAM | Tape & Reel | 2008 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | GULL WING | 260 | 1 | 5V | 0.5mm | - | - | 30 | 100 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | - | 2 | 340mA | - | - | - | - | 15 ns | - | 3-STATE | - | 17b | 1 Mb | 0.003A | - | - | COMMON | Asynchronous | 8b | - | - | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
 7164L20YG Integrated Device Technology (IDT) | 1201 |
| Datasheet | 7 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 28 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 8kB | 1 | 90mA | - | - | - | - | 20 ns | 8KX8 | 3-STATE | - | 13b | 64 kb | 0.00006A | - | - | COMMON | Asynchronous | 8b | 2V | - | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
 7025L15PFG8 Integrated Device Technology (IDT) | In Stock | - | Datasheet | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | - | QUAD | GULL WING | - | 1 | 5V | 0.5mm | - | - | - | 100 | - | - | 5V | - | - | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 16kB | 2 | 260mA | - | - | - | - | 15 ns | 8KX16 | 3-STATE | - | 13b | 128 kb | 0.0015A | - | - | COMMON | Asynchronous | 16b | - | YES | - | - | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
 71V3577S85BQI8 Integrated Device Technology (IDT) | In Stock | - | Datasheet | 11 Weeks | Surface Mount | FBGA | - | 165 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 165 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | - | 87MHz | 20 | 165 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | - | 1 | 190mA | - | - | - | - | 8.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.035A | - | - | COMMON | Synchronous | 36b | - | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
 71V124SA15TYG Integrated Device Technology (IDT) | In Stock | - | Datasheet | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | - | 32 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 128kB | 1 | 100mA | - | - | - | - | 15 ns | - | 3-STATE | - | 17b | 1 Mb | - | - | - | COMMON | Asynchronous | 8b | 3V | - | - | 3.7592mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
 71V65903S85BQG Integrated Device Technology (IDT) | 63 |
| Datasheet | 7 Weeks | - | - | YES | 165 | - | RAM, SRAM | - | 2005 | e1 | yes | Active | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | - | - | 30 | 165 | - | - | 3.3V | 3.465V | - | COMMERCIAL | - | Parallel | - | - | - | 1 | - | - | - | - | - | - | - | - | - | 19b | 9 Mb | - | - | 8.5 ns | - | - | - | - | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
 IDT71V432S7PF Integrated Device Technology (IDT) | 2 | - | Datasheet | - | - | LQFP | YES | - | - | RAM, SRAM | - | 2014 | e0 | - | - | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 3.3V | 0.65mm | not_compliant | - | 20 | 100 | R-PQFP-G100 | Not Qualified | - | 3.63V | 3.3V | COMMERCIAL | 3.135V | Parallel | - | - | - | 1 | - | SYNCHRONOUS | - | 66MHz | 0.16mA | - | 32KX32 | 3-STATE | 32 | - | - | 0.015A | 1048576 bit | 7 ns | COMMON | - | - | 3.14V | YES | - | 1.6mm | 20mm | 14mm | - | - | Non-RoHS Compliant | - | ||
 71V67603S133BQG8 Integrated Device Technology (IDT) | In Stock | - | Datasheet | 12 Weeks | - | - | YES | 165 | 133MHz | RAM, SDR, SRAM | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | - | 133MHz | 30 | 165 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 1.1MB | 1 | - | - | - | - | 0.26mA | 4.2 ns | 256KX36 | 3-STATE | - | 18b | 9 Mb | 0.05A | - | - | COMMON | - | - | - | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
 6116SA25TPGI Integrated Device Technology (IDT) | In Stock | - | Datasheet | 7 Weeks | Through Hole | PDIP | - | 24 | - | RAM, SDR, SRAM - Asynchronous | Bulk | 2013 | e3 | yes | Active | 1 (Unlimited) | 24 | EAR99 | MATTE TIN | 85°C | -40°C | - | - | DUAL | - | 260 | 1 | 5V | 2.54mm | - | - | - | 24 | - | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 2kB | 1 | 80mA | - | - | - | - | 25 ns | 2KX8 | 3-STATE | - | 11b | 16 kb | 0.002A | - | - | COMMON | Asynchronous | 8b | - | - | - | - | 31.75mm | 7.62mm | 3.3mm | No | RoHS Compliant | Lead Free | ||
 IDT71V424L12PHI Integrated Device Technology (IDT) | 20000 | - | Datasheet | - | - | TSOP | YES | - | - | RAM, SRAM - Asynchronous | - | 2009 | e0 | no | - | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | - | 8542.32.00.41 | DUAL | GULL WING | 225 | 1 | 3.3V | 0.8mm | not_compliant | - | 20 | 44 | R-PDSO-G44 | Not Qualified | - | 3.6V | 3.3V | INDUSTRIAL | 3V | Parallel | - | - | - | - | - | - | - | - | 0.155mA | - | 512KX8 | 3-STATE | 8 | - | - | 0.01A | 4194304 bit | 12 ns | COMMON | - | - | 3V | - | - | 1.2mm | 18.41mm | 10.16mm | - | - | Non-RoHS Compliant | - | ||
 71V416L12BE8 Integrated Device Technology (IDT) | In Stock | - | Datasheet | 12 Weeks | Surface Mount | TFBGA | - | 48 | - | RAM, SDR, SRAM - Asynchronous | - | 2014 | e0 | no | Active | 4 (72 Hours) | 48 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | - | BOTTOM | BALL | 225 | 1 | 3.3V | 0.75mm | - | - | 20 | 48 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 170mA | - | - | - | - | 12 ns | - | 3-STATE | - | 18b | 4 Mb | - | - | - | COMMON | Asynchronous | 16b | 3V | - | - | - | 9mm | 9mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
 71T75802S166BGG Integrated Device Technology (IDT) | In Stock | - | Datasheet | 8 Weeks | - | BGA | YES | 119 | 166MHz | RAM, SDR, SRAM | - | 2012 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 260 | 1 | 2.5V | - | - | 166MHz | 30 | 119 | - | - | 2.5V | - | - | COMMERCIAL | - | Parallel | 2.625V | 2.375V | 2.3MB | 1 | - | - | 245mA | - | - | 3.5 ns | - | 3-STATE | - | 20b | 18 Mb | 0.04A | - | - | COMMON | - | - | 2.38V | - | 2.15mm | - | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Lead Free | ||
 IDT71V432S10PF Integrated Device Technology (IDT) | 67 | - | Datasheet | - | - | LQFP | YES | - | - | RAM, SRAM | - | 2014 | e0 | no | - | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER; BYTE WRITE CONTROL | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 3.3V | 0.65mm | not_compliant | - | 20 | 100 | R-PQFP-G100 | Not Qualified | - | 3.63V | - | COMMERCIAL | 3.135V | Parallel | - | - | - | 1 | - | SYNCHRONOUS | - | - | - | - | 32KX32 | 3-STATE | 32 | - | - | - | 1048576 bit | 10 ns | - | - | - | - | YES | - | 1.6mm | 20mm | 14mm | - | - | Non-RoHS Compliant | - | ||
 709279L12PFGI Integrated Device Technology (IDT) | In Stock | - | Datasheet | 7 Weeks | - | TQFP | - | 100 | - | RAM, SDR, SRAM | Bulk | 2009 | - | - | Active | - | - | - | - | 85°C | -40°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5V | - | - | - | - | Parallel | 5.5V | 4.5V | 64kB | 2 | - | - | - | - | - | 12 ns | - | - | - | 30b | 512 kb | - | - | - | - | - | - | - | - | - | - | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
 IDT71V424S10Y Integrated Device Technology (IDT) | 10 | - | Datasheet | - | - | - | YES | 36 | - | RAM, SRAM - Asynchronous | - | 2009 | e0 | no | - | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 3.3V | 1.27mm | - | - | 30 | 36 | - | Not Qualified | - | 3.6V | 3.3V | COMMERCIAL | 3V | Parallel | - | - | - | - | - | - | - | - | 0.18mA | - | 512KX8 | 3-STATE | 8 | - | - | 0.02A | 4194304 bit | 10 ns | COMMON | - | - | 3V | - | - | 3.683mm | 23.495mm | 10.16mm | - | - | RoHS Compliant | - | ||
 70V06L15JG Integrated Device Technology (IDT) | In Stock | - | Datasheet | 7 Weeks | Surface Mount | PLCC | - | 68 | - | RAM, SRAM | Bulk | 2008 | e3 | yes | Active | 3 (168 Hours) | 68 | EAR99 | MATTE TIN | 70°C | 0°C | - | - | QUAD | J BEND | 260 | 1 | 3.3V | - | - | - | - | 68 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | - | 2 | 185mA | - | - | - | - | 15 ns | 16KX8 | - | - | 28b | 128 kb | - | - | - | - | Asynchronous | 8b | - | - | - | 4.57mm | 24mm | 24mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
 71V67703S85BQI8 Integrated Device Technology (IDT) | In Stock | - | Datasheet | 7 Weeks | - | - | YES | 165 | - | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Active | 3 (168 Hours) | 165 | - | TIN LEAD | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | - | - | 20 | 165 | - | - | 3.3V | 3.465V | - | INDUSTRIAL | - | Parallel | - | - | - | 1 | - | - | - | 87MHz | - | - | 256KX36 | 3-STATE | - | 18b | 9 Mb | 0.07A | - | 8.5 ns | COMMON | - | - | - | - | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Contains Lead | ||
 71V416YS10PHG Integrated Device Technology (IDT) | In Stock | - | Datasheet | - | Surface Mount | TSOP | - | 44 | - | RAM, SRAM - Asynchronous | Bulk | 2005 | e3 | yes | - | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | - | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | - | 1 | 200mA | - | - | - | - | 10 ns | - | 3-STATE | 16 | 18b | 4 Mb | 0.02A | - | - | COMMON | Asynchronous | 16b | 3V | - | - | - | - | - | - | No | RoHS Compliant | - |