- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- ECCN Code
- Surface Mount
- Polarity/Channel Type
- Operating Temperature-Max
- Configuration
- FET Technology
- Operating Mode
- JESD-30 Code
- Number of Terminals
Attribute column
Manufacturer
Intersil Transistors - Special Purpose
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Housing material | Shape | Number of Terminals | Transistor Element Material | Material - Cone | Material - Magnet | Exterior Housing Material | Button head and shape | Case | Date Of Intro | Dielectric strength | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Illuation color | Illumination voltage | Indicator type | Insulation voltage | Kind of integrated circuit | Kind of package | LED operating life | Load voltage | Mounting | Mounting diameter | Number of Elements | Number of switching cycles (electrical) | Operating ambient temperature | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection class | Relative humidity | Rohs Code | Switching scheme | Transition Frequency-Nom (fT) | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of integrated circuit | Operating temperature | Operating Temperature | Packaging | Series | Size / Dimension | JESD-609 Code | Pbfree Code | Part Status | Termination | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Contact resistance | Configuration | Insulation resistance | Number of channels | Leakage current | Impedance | Operating Mode | Output current | Case Connection | Power - Max | Switch type | Control mode | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Sampling Rate (Per Second) | Drain-source On Resistance-Max | Frequency Range | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Load current | Power - Rated | Port Location | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Rated voltage | Kit Type | Fuse | Efficiency - dBA | Efficiency - Type | Control current | Feedback Cap-Max (Crss) | Efficiency - Testing | Highest Frequency Band | Power Dissipation Ambient-Max | Switching time | Saturation Current | Power Gain-Min (Gp) | Distortion Rating | Contacts | Diameter | Height |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() 2SK317 Renesas Electronics Corporation | In Stock | - | Datasheet | NO | - | Round | - | - | Polyethylene Naphthalate (PEN), Polyurethane (PU) | Nd-Fe-B | 1 | - | - | - | - | 8 A | 12.30 | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | - | - | - | 42*28*18.5/500 | - | - | - | - | -25°C ~ 50°C | Bulk | AS | 0.866" Dia (22.00mm) | - | - | Active | None | EAR99 | General Purpose | - | - | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | 4 Ohms | ENHANCEMENT MODE | - | - | 3.5 W | - | - | - | N-CHANNEL | - | - | - | 0.315" (8.00mm) | - | 300 Hz ~ 20 kHz | - | - | METAL-OXIDE SEMICONDUCTOR | 120 W | - | 3 W | Top | - | - | - | 300Hz | - | 80.00 | Sensitivity | - | - | 1W/500mm | - | - | - | - | - | 5% @ 1kHz, 1W | - | - | - | ||
![]() 2SK1058 Renesas Electronics Corporation | In Stock | - | Datasheet | NO | - | - | 3 | SILICON | - | - | 1 | - | SOW8 | 1997-08-01 | - | 7 A | 1 g | RENESAS ELECTRONICS CORP | - | - | - | 5kV | gate driver | reel, | - | - | SMD | - | - | - | - | - | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | No | - | - | - | - | - | driver | -40...125°C | - | - | - | - | e0 | No | - | - | EAR99 | - | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | 1 | - | - | ENHANCEMENT MODE | 10A | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | - | - | - | 160 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() 2SK3113 Renesas Electronics Corporation | In Stock | - | Datasheet | NO | nickel-plated brass | - | 3 | SILICON | - | - | 1 | ring - cone; flat button | - | - | 2000 (50 Hz / 5 s) V | 2 A | 20.88 | RENESAS ELECTRONICS CORP | greemin | 12 V | ring + pictogram "ON" | - | - | - | ≥40000 hours | - | - | 19 mm | - | ≥50000 | - | 150 °C | PLASTIC/EPOXY | TO-251, MP-3, 3 PIN | RECTANGULAR | IN-LINE | Obsolete | TO-251AA | IP65 | 45...85 % | No | ON-(ON) without fixation | - | 62*27.5*28/250 | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | TIN LEAD | AVALANCHE ENERGY RATED | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | 3 | R-PSIP-T3 | Not Qualified | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | Vandal proof button from LAS1-AGQ series with illumination | - | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | TO-251AA | - | 4.4 Ω | - | - | 600 V | METAL-OXIDE SEMICONDUCTOR | 1 W | - | - | - | - | - | 250 V | - | - | - | - | - | - | - | - | - | - | - | - | - | 3Pin+2Pin | 22 mm | - | ||
![]() NE3210S01-T1B Renesas Electronics Corporation | In Stock | - | Datasheet | YES | ABS UL94-V0 | - | 4 | SILICON | - | - | 1 | - | - | - | 2500 (50 Hz / 1 min.) V | 0.015 A | 124.50 | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | ~90...250 V | - | - | - | - | -40...+80 °C | 125 °C | PLASTIC/EPOXY | MICROWAVE, X-PXMW-G4 | UNSPECIFIED | MICROWAVE | Obsolete | - | - | 35...85 % | Yes | - | - | 42.5*35.5*15/100 | - | - | - | - | - | - | - | - | e0 | Yes | - | - | EAR99 | Single-phase linear solid state relay from the SCR series with fuse | TIN LEAD | - | 8541.21.00.95 | UNSPECIFIED | GULL WING | 230 | 62 mm | compliant | 30 | - | X-PXMW-G4 | Not Qualified | - | SINGLE | ≥100 (at Uinsp.dc=500V) MΩ | - | not more than 0.5% mA | - | DEPLETION MODE | - | SOURCE | - | - | phase control | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | 3 V | HETERO-JUNCTION | - | 25 A | - | - | - | - | - | - | 10x38 mm 10 A | - | - | ≤4-20 mA | - | - | KU BAND | 0.165 W | ≤1.0 ms | - | 12 dB | - | - | - | 35 mm | ||
![]() RQK0609CQDQSTL-E Renesas Electronics Corporation | In Stock | - | Datasheet | YES | - | - | 3 | SILICON | - | - | 1 | - | - | - | - | 4 A | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Active | SC-62 | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e6 | Yes | - | - | EAR99 | - | TIN BISMUTH | - | - | SINGLE | FLAT | - | - | compliant | - | 4 | R-PSSO-F3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.125 Ω | - | 12 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 1.5 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | ||
![]() RQA0009SXTL-E Renesas Electronics Corporation | In Stock | - | Datasheet | YES | - | - | 3 | SILICON | - | - | 1 | - | - | - | - | 3.2 A | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Active | SC-62 | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | Yes | - | - | EAR99 | - | - | - | - | SINGLE | FLAT | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 3 | R-PSSO-F3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | SOURCE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | 16 V | METAL-OXIDE SEMICONDUCTOR | 15 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() 2SJ355-T1 Renesas Electronics Corporation | In Stock | - | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() 2N5906 Intersil Corporation | In Stock | - | Datasheet | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | not_compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | JUNCTION | 0.5 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() RFL1N10 Intersil Corporation | In Stock | - | Datasheet | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | 1 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | TIN LEAD | - | 8541.29.00.95 | BOTTOM | WIRE | - | - | not_compliant | - | - | O-MBCY-W3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | TO-205AF | - | 1.2 Ω | - | - | 100 V | METAL-OXIDE SEMICONDUCTOR | 8.3 W | - | - | - | - | - | - | - | - | - | - | - | 25 pF | - | - | 8.33 W | - | - | - | - | - | - | - | ||
![]() P2H10M440H Nihon Inter Electronics Corporation | In Stock | - | Datasheet | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 60 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.085 Ω | - | 170 A | 500 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() P2H4M440L Nihon Inter Electronics Corporation | In Stock | - | Datasheet | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 21 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.21 Ω | - | 60 A | 500 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() P2H10M441L Nihon Inter Electronics Corporation | In Stock | - | Datasheet | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 50 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.085 Ω | - | 140 A | 450 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() PDM505HC Nihon Inter Electronics Corporation | In Stock | - | Datasheet | NO | - | - | 7 | SILICON | - | - | - | - | - | - | - | 35 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 7 | R-XUFM-X7 | Not Qualified | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.12 Ω | - | 100 A | 500 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() P2HM1102H Nihon Inter Electronics Corporation | In Stock | - | Datasheet | NO | - | - | 8 | SILICON | - | - | - | - | - | - | - | 80 A | - | NIHON INTER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | 8 | R-XUFM-X8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | - | - | SWITCHING | N-CHANNEL | - | - | - | - | 0.033 Ω | - | 220 A | 250 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() RFP18N10 Intersil Corporation | 36649 | - | Datasheet | NO | - | - | - | - | - | - | - | - | - | - | - | 18 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | not_compliant | - | - | - | - | - | SINGLE | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() RFH25P08 Intersil Corporation | 5268 | - | Datasheet | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | 25 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | No | - | - | - | 650 ns | 300 ns | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | P-CHANNEL | - | - | TO-218AC | - | 0.15 Ω | - | 60 A | 80 V | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | - | - | - | - | - | - | - | - | 600 pF | - | - | 150 W | - | - | - | - | - | - | - | ||
![]() WNMBP06-01NK0-EH Foxconn Interconnect Technology Limited | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() BD901 Intersil Corporation | In Stock | - | Datasheet | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | No | - | 1 MHz | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | not_compliant | - | - | - | - | - | DARLINGTON | - | - | - | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 70 W | - | - | - | 8 A | 750 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() RFL1N12L Intersil Corporation | In Stock | - | Datasheet | NO | - | - | 3 | SILICON | - | - | - | - | - | - | - | 1 A | - | INTERSIL CORP | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | TIN LEAD | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | BOTTOM | WIRE | - | - | not_compliant | - | - | O-MBCY-W3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | TO-205AF | - | 1.9 Ω | - | - | 120 V | METAL-OXIDE SEMICONDUCTOR | 8.3 W | - | - | - | - | - | - | - | - | - | - | - | 35 pF | - | - | 8.33 W | - | - | - | - | - | - | - | ||
![]() 3N205 Intersil Corporation | In Stock | - | - | NO | - | - | - | - | - | - | - | - | - | - | - | 0.05 A | - | HARRIS SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | 1 | - | - | 200 °C | - | , | - | - | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.36 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |