- Configuration
- DS Breakdown Voltage-Min
- Drain Current-Max (ID)
- Drain-source On Resistance-Max
- FET Technology
- Ihs Manufacturer
- JESD-30 Code
- Manufacturer
- Manufacturer Part Number
- Number of Elements
- Number of Terminals
- Operating Mode
Attribute column
Manufacturer
ISC Transistors - FETs, MOSFETs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Base Product Number | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Subcategory | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Brand Name | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Power Dissipation Ambient-Max |
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 APT6017WVR ISC | In Stock | - | - | NO | 3 | SILICON | - | 31.5 A | MICROSEMI CORP | Microsemi Corporation | - | APT6017WVR | - | - | 1 | 125 °C | - | METAL | TO-267, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-267AA | - | NOT SPECIFIED | 5.29 | - | No | - | e0 | No | - | TIN LEAD | FET General Purpose Power | SINGLE | PIN/PEG | NOT SPECIFIED | unknown | 3 | R-MSFM-P3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | TO-267AA | 31.5 A | 0.17 Ω | - | 600 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | 450 W | - | ||
FQA70N08 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FS5VS-18A ISC | In Stock | - | - | YES | 2 | SILICON | - | 5 A | POWEREX INC | Powerex Power Semiconductors | - | FS5VS-18A | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-220S | - | - | 5.92 | - | No | - | e0 | - | - | Tin/Lead (Sn/Pb) | FET General Purpose Power | SINGLE | GULL WING | - | unknown | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 5 A | 2.8 Ω | - | 900 V | - | METAL-OXIDE SEMICONDUCTOR | 125 W | 125 W | ||
FQA58N08 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FS30KMJ-2 ISC | In Stock | - | - | NO | 3 | SILICON | - | 30 A | POWEREX INC | Powerex Power Semiconductors | - | FS30KMJ-2 | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220FN | - | - | 5.35 | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | FET General Purpose Power | SINGLE | THROUGH-HOLE | - | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 30 A | 0.084 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 25 W | 25 W | ||
FS50SM-5A ISC | In Stock | - | - | NO | 3 | SILICON | - | 50 A | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | - | FS50SM-5A | - | - | 1 | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Not Recommended | TO-3P | - | - | 5.35 | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | compliant | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | 0.068 Ω | 150 A | 250 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | ||
FDP603AL ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FS14SM-14A ISC | In Stock | - | - | NO | 3 | SILICON | - | 14 A | MITSUBISHI ELECTRIC CORP | Mitsubishi Electric | - | FS14SM-14A | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 5.84 | - | - | - | - | - | - | - | FET General Purpose Power | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 14 A | 0.78 Ω | 42 A | 700 V | - | METAL-OXIDE SEMICONDUCTOR | 200 W | - | ||
FS3UM-18A ISC | In Stock | - | - | NO | 3 | SILICON | - | 3 A | MITSUBISHI ELECTRIC CORP | Mitsubishi Electric | - | FS3UM-18A | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | SFM | - | - | 5.84 | - | - | - | - | - | - | - | FET General Purpose Power | SINGLE | THROUGH-HOLE | - | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 3 A | 4 Ω | 9 A | 900 V | - | METAL-OXIDE SEMICONDUCTOR | 100 W | - | ||
FQA22N30 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
ISL9N307AP3 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
IRFR024N ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
IRFR3910 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
IRLR2905 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
H5N2503P-E ISC | In Stock | - | - | NO | 3 | SILICON | KJB6T | 50 A | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | PRSS0004ZE-A4 | H5N2503P-E | ITT Cannon, LLC | 1 | 1 | 150 °C | Bulk | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Not Recommended | TO-3P | Active | NOT SPECIFIED | 5.24 | - | Yes | * | e2 | Yes | EAR99 | TIN COPPER | FET General Purpose Power | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | 4 | R-PSFM-T3 | Not Qualified | Renesas | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 50 A | 0.055 Ω | 200 A | 250 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | ||
2SK894 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FS5KM-10. ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FQAF13N50 ISC | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FS5KM-5 ISC | In Stock | - | - | NO | 3 | SILICON | - | 5 A | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | - | FS5KM-5 | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | - | 5.38 | - | - | - | - | - | EAR99 | - | FET General Purpose Power | SINGLE | THROUGH-HOLE | - | compliant | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 5 A | 1.3 Ω | 15 A | 250 V | - | METAL-OXIDE SEMICONDUCTOR | 30 W | - | ||
FS5UM-9 ISC | In Stock | - | - | NO | 3 | SILICON | - | 5 A | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | - | FS5UM-9 | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | - | 5.39 | - | - | - | - | - | - | - | FET General Purpose Power | SINGLE | THROUGH-HOLE | - | compliant | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 5 A | 1.4 Ω | 15 A | 450 V | - | METAL-OXIDE SEMICONDUCTOR | 90 W | - |