- Part Status
- Mounting Type
- Package / Case
- Drain to Source Voltage (Vdss)
- FET Feature
- FET Type
- Gate Charge (Qg) (Max) @ Vgs
- Operating Temperature
- Vgs(th) (Max) @ Id
- Packaging
- Moisture Sensitivity Level (MSL)
- Published
Attribute column
Manufacturer
IXYS Transistors - FETs, MOSFETs - Arrays
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Material | Number of Terminals | Transistor Element Material | Automotive | Category | Channel Mode | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | ECCN (US) | EU RoHS | HTS | Ihs Manufacturer | Lead Shape | Manufacturer | Manufacturer Part Number | Maximum Continuous Drain Current (A) | Maximum Drain Source Resistance (mOhm) | Maximum Drain Source Voltage (V) | Maximum Gate Source Leakage Current (nA) | Maximum Gate Source Voltage (V) | Maximum Gate Threshold Voltage (V) | Maximum IDSS (uA) | Maximum Operating Temperature (°C) | Maximum Power Dissipation (mW) | Minimum Operating Temperature (°C) | Mounting | Number of Elements | Number of Elements per Chip | Operating Temperature-Max | Package Body Material | Package Description | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Process Technology | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Standard Package Name | Supplier Package | Tab | Turn Off Delay Time | Typical Fall Time (ns) | Typical Gate Charge @ 10V (nC) | Typical Gate Charge @ Vgs (nC) | Typical Input Capacitance @ Vds (pF) | Typical Rise Time (ns) | Typical Turn-Off Delay Time (ns) | Typical Turn-On Delay Time (ns) | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Subcategory | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Channel Type | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | FET Feature | Drain to Source Resistance | Highest Frequency Band | Power Dissipation Ambient-Max | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 IXTL2X180N10T IXYS | In Stock | - | Datasheet | 30 Weeks | Through Hole | Through Hole | ISOPLUSi5-Pak™ | - | 5 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 42 ns | - | - | - | - | - | - | - | -55°C~175°C TJ | Tube | 2012 | Trench™ | - | yes | Active | 1 (Unlimited) | 5 | EAR99 | - | - | - | AVALANCHE RATED | - | 150W | SINGLE | - | NOT SPECIFIED | - | NOT SPECIFIED | - | 5 | - | Not Qualified | COMPLEX | - | ENHANCEMENT MODE | 150W | ISOLATED | - | 2 N-Channel (Dual) | SWITCHING | 7.4m Ω @ 50A, 10V | 4.5V @ 250μA | 6900pF @ 25V | 151nC @ 10V | 54ns | 100V | - | 31 ns | 100A | - | - | - | 0.0074Ohm | 100V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | ROHS3 Compliant | Lead Free | ||
 FMM150-0075X2F IXYS | In Stock | - | Datasheet | 30 Weeks | Through Hole | Through Hole | ISOPLUSi5-Pak™ | - | - | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~175°C TJ | Tube | 2009 | HiPerFET™, TrenchT2™ | e1 | yes | Active | 1 (Unlimited) | 5 | EAR99 | TIN SILVER COPPER | - | - | AVALANCHE RATED, UL RECOGNIZED | - | 170W | SINGLE | - | - | - | - | - | 5 | R-PSIP-T5 | - | - | - | ENHANCEMENT MODE | 170W | ISOLATED | - | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 5.8m Ω @ 100A, 10V | 4V @ 250μA | 10500pF @ 25V | 178nC @ 10V | - | 75V | - | - | 120A | - | - | - | 0.0058Ohm | - | 500A | 75V | - | 850 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | No | ROHS3 Compliant | - | ||
 LKK47-06C5 IXYS | In Stock | - | Datasheet | 32 Weeks | Through Hole | Through Hole | ISOPLUS264™ | - | 5 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 100 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tube | 2009 | CoolMOS™ | e1 | yes | Active | 1 (Unlimited) | 5 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AVALANCHE RATED | - | - | SINGLE | - | NOT SPECIFIED | - | NOT SPECIFIED | - | 5 | - | Not Qualified | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | 480W | ISOLATED | - | 2 N-Channel (Dual) | SWITCHING | 45m Ω @ 44A, 10V | 3.9V @ 3mA | 6800pF @ 100V | 190nC @ 10V | 20ns | 600V | - | 10 ns | 47A | - | 20V | - | - | 600V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Super Junction | - | - | - | - | ROHS3 Compliant | Lead Free | ||
 VMM650-01F IXYS | In Stock | - | Datasheet | - | Chassis Mount, Screw | Chassis Mount | Y3-Li | - | 6 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 400 ns | - | - | - | - | - | - | - | -40°C~150°C TJ | Bulk | 2004 | HiPerFET™ | - | yes | Active | 1 (Unlimited) | 9 | EAR99 | - | - | - | - | - | - | UPPER | UNSPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | VMM | - | R-PUFM-X9 | Not Qualified | - | - | ENHANCEMENT MODE | - | ISOLATED | - | 2 N-Channel (Dual) | SWITCHING | 2.2m Ω @ 500A, 10V | 4V @ 30mA | - | 1440nC @ 10V | 250ns | 100V | - | 250 ns | 680A | - | 20V | - | 0.0018Ohm | 100V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | ROHS3 Compliant | Lead Free | ||
FMM50-025TF IXYS | In Stock | - | Datasheet | 30 Weeks | Through Hole | Through Hole | i4-Pac™-5 | - | 5 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tube | 2008 | HiPerFET™ | e1 | yes | Active | 1 (Unlimited) | 5 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AVALANCHE RATED, UL RECOGNIZED | - | 125W | SINGLE | - | NOT SPECIFIED | - | NOT SPECIFIED | FMM | 5 | - | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | 125W | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 25A, 10V | 4.5V @ 250μA | 4000pF @ 25V | 78nC @ 10V | - | 250V | - | - | 30A | - | - | - | - | - | - | - | - | 400 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | ROHS3 Compliant | - | ||
 FMM60-02TF IXYS | In Stock | - | Datasheet | 30 Weeks | Through Hole | Through Hole | i4-Pac™-5 | - | 5 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tube | 2008 | HiPerFET™ | e1 | yes | Active | 1 (Unlimited) | 5 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AVALANCHE RATED, UL RECOGNIZED | - | 125W | SINGLE | - | NOT SPECIFIED | - | NOT SPECIFIED | FMM | 5 | - | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | 125W | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 30A, 10V | 4.5V @ 250μA | 3700pF @ 25V | 90nC @ 10V | - | 200V | - | - | 33A | - | - | - | 0.04Ohm | - | - | 200V | - | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | ROHS3 Compliant | Lead Free | ||
VMM90-09F IXYS | In Stock | - | Datasheet | 28 Weeks | Chassis Mount, Screw | Chassis Mount | Y3-Li | - | 9 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~150°C TJ | Bulk | 2005 | HiPerFET™ | - | yes | Active | 1 (Unlimited) | 9 | - | - | - | - | - | - | - | UPPER | UNSPECIFIED | - | - | - | VMM | - | - | - | - | - | ENHANCEMENT MODE | - | ISOLATED | - | 2 N-Channel (Dual) | SWITCHING | 76m Ω @ 65A, 10V | 5V @ 30mA | - | 960nC @ 10V | - | 900V | - | - | 85A | - | 20V | - | 0.076Ohm | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | No | ROHS3 Compliant | Lead Free | ||
MCB40P1200LB IXYS | In Stock | - | - | - | - | Surface Mount | 9-SMD Power Module | - | - | SMPD | - | - | - | - | - | - | 58A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -- | - | - | CoolMOS™ | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -- | 2 N-Channel (Dual) Common Source | - | -- | -- | -- | -- | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | - | - | - | - | - | ||
IXTM20N60 IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | 3 | - | Si | - | - | No | Power MOSFET | Enhancement | - | - | - | Compliant | - | - | - | - | - | 20 | 350@10V | 600 | - | ±20 | - | - | 150 | 300000 | -55 | Through Hole | - | 1 | - | - | - | 11.4(Max) | 39.12(Max) | - | - | 26.66(Max) | - | - | 2 | No | - | - | - | Compliant | - | - | TO-204AE | Tab | - | 40 | 150 | 150@10V | 4500@25V | 43 | 70 | 20 | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3 | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | - | - | - | - | - | - | - | - | ||
IXFM6N100 IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | NO | - | - | Si | 2 | SILICON | No | Power MOSFET | Enhancement | - | 6 A | - | Compliant | 8541.29.00.95 | IXYS CORP | - | IXYS Corporation | IXFM6N100 | 6 | - | 1000 | - | ±20 | - | - | 150 | 180000 | -55 | Through Hole | 1 | 1 | 150 °C | METAL | FLANGE MOUNT, O-MBFM-P2 | 9.14(Max) | 39.12(Max) | ROUND | FLANGE MOUNT | 25.9(Max) | Obsolete | TO-3 | 2 | No | HiperFET | NOT SPECIFIED | 5.82 | - | Yes | - | TO-204AA | Tab | - | 60 | 88 | 88@10V | 2600@25V | 40 | 100 | 35 | - | - | - | - | - | Yes | Obsolete | - | - | - | - | - | - | AVALANCHE RATED | FET General Purpose Power | - | BOTTOM | PIN/PEG | NOT SPECIFIED | compliant | - | - | 3 | O-MBFM-P2 | Not Qualified | Single | - | ENHANCEMENT MODE | - | DRAIN | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | TO-204 | - | 6 A | 2 Ω | - | 24 A | 1000 V | N | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | - | 180 W | - | - | - | ||
IXTY8N65X2 TRL IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | 8541.29.00.95 | - | - | - | - | 8 | - | 650 | 100 | ±30 | 5 | 10 | 150 | 150000 | -55 | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 24 | 12 | 12@10V | 800@25V | 28 | 53 | 24 | - | - | - | - | - | - | Acquired | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | - | - | - | - | - | - | - | - | ||
IXFT60N20F IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | No | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | 8541.29.00.95 | - | Gull-wing | - | - | 60 | 38@10V | 200 | - | ±20 | - | - | 150 | 320000 | -55 | Surface Mount | - | 1 | - | - | - | 5.1(Max) | 16.05(Max) | - | - | 14(Max) | - | - | 2 | No | - | - | - | - | - | TO-268-AA | TO-268 | Tab | - | 7 | 100 | 100@10V | 2930@25V | 14 | 42 | 15 | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3 | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | - | - | - | - | - | - | - | - | ||
DE275-201N25A IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | No | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | IXYS CORP | - | IXYS Corporation | DE275-201N25A | 25 | 130@15V | 200 | - | ±20 | - | - | 175 | 590000 | -55 | Surface Mount | - | 1 | - | - | , | 3.3(Max) | 15.6 | - | - | 16.51 | Obsolete | - | 6 | No | - | NOT SPECIFIED | 8.63 | - | Yes | - | Case 275 | - | - | 8 | 81 | 81@10V | 2500@160V | 5 | 8 | 5 | - | - | - | - | - | Yes | - | - | - | EAR99 | - | - | - | - | FET General Purpose Power | - | - | - | NOT SPECIFIED | compliant | - | - | 6 | - | Not Qualified | Single Quad Source | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | - | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | ||
IXFM40N30 IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | NO | - | - | - | 2 | SILICON | No | Power MOSFET | Enhancement | - | 40 A | EAR99 | Compliant | 8541.29.00.95 | IXYS CORP | - | IXYS | IXFM40N30 | 40 | - | 300 | - | ±20 | - | - | 150 | 300000 | -55 | Through Hole | 1 | 1 | 150 °C | METAL | FLANGE MOUNT, O-MBFM-P2 | 11.4(Max) | 39.12(Max) | ROUND | FLANGE MOUNT | 26.66(Max) | Obsolete | TO-3 | 2 | No | - | NOT SPECIFIED | 5.83 | - | Yes | - | TO-204AE | Tab | - | 45 | 177 | 177@10V | 4800@25V | 60 | 75 | 20 | - | - | - | - | - | Yes | Obsolete | - | - | - | - | - | - | AVALANCHE RATED | FET General Purpose Power | - | BOTTOM | PIN/PEG | NOT SPECIFIED | compliant | - | - | 3 | O-MBFM-P2 | Not Qualified | Single | - | ENHANCEMENT MODE | - | DRAIN | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | TO-204 | - | 40 A | 0.088 Ω | - | 160 A | 300 V | N | - | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | 300 W | - | - | - | ||
IXT-1-1N100S1-TRL IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | Unknown | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Unconfirmed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
IXZH10N50LA IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | No | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | IXYS CORP | - | IXYS Corporation | IXZH10N50LA | 10 | - | 500 | 100 | ±20 | 6.5 | 50 | 175 | 3000 | -55 | Through Hole | - | 1 | - | - | TO-247AD, 3 PIN | 21.46(Max) | 16.26(Max) | - | - | 5.3(Max) | Obsolete | TO-247AD | 3 | No | - | NOT SPECIFIED | 5.82 | - | Yes | - | TO-247AD | Tab | - | - | - | - | - | - | - | - | - | - | - | - | - | Yes | Obsolete | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | compliant | - | - | 3 | - | Not Qualified | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | - | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | ||
IXFT60N65X2HVTRL IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | - | - | - | - | 60 | - | 650 | - | ±30 | - | - | 150 | 780000 | -55 | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 12 | 108 | 108@10V | 6300@25V | 23 | 63 | 30 | - | - | - | - | - | - | Acquired | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N | - | - | - | - | - | - | - | - | - | - | ||
IXFM12N100 IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | - | - | - | Si | - | - | No | Power MOSFET | Enhancement | - | - | - | Compliant | - | - | - | - | - | 12 | - | 1000 | - | ±20 | - | - | 150 | 300000 | -55 | Through Hole | - | 1 | - | - | - | 11.4(Max) | 30.15 + 9.54(Max) | - | - | 26.66 | - | - | 2 | No | HDMOS | - | - | Compliant | - | - | TO-204AA | Tab | 62 ns | 32 | 122 | 122@10V | 4000@25V | 33 | 62 | 21 | - | - | - | - | - | - | Obsolete | - | - | - | - | 150 °C | -55 °C | - | - | - | - | - | - | - | - | - | 3 | - | - | Single | Single | - | 300 W | - | - | - | - | - | - | - | - | 33 ns | - | - | - | 12 A | - | 20 V | - | - | 1 kV | - | - | N | - | - | - | - | 1.05 Ω | - | - | - | - | - | ||
IXFM20N60 IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | NO | - | - | Si | 2 | SILICON | No | Power MOSFET | Enhancement | - | 20 A | EAR99 | Compliant | 8541.29.00.95 | IXYS CORP | - | IXYS Corporation | IXFM20N60 | 20 | - | 600 | - | ±20 | - | - | 150 | 300000 | -55 | Through Hole | 1 | 1 | 150 °C | METAL | FLANGE MOUNT, O-MBFM-P2 | 11.4(Max) | 39.12(Max) | ROUND | FLANGE MOUNT | 26.66(Max) | Obsolete | TO-3 | 2 | No | HiperFET | NOT SPECIFIED | 5.83 | - | Yes | - | TO-204AE | Tab | - | 40 | 151 | 151@10V | 4500@25V | 43 | 70 | 20 | - | - | - | - | - | Yes | Obsolete | - | - | - | - | - | - | AVALANCHE RATED | FET General Purpose Power | - | BOTTOM | PIN/PEG | NOT SPECIFIED | compliant | - | - | 3 | O-MBFM-P2 | Not Qualified | Single | - | ENHANCEMENT MODE | - | DRAIN | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | TO-204 | - | 20 A | 0.35 Ω | - | 80 A | 600 V | N | - | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | 300 W | - | - | - | ||
IXFR12N100F IXYS Integrated Circuits Division / Littelfuse | In Stock | - | - | - | - | - | - | NO | - | - | - | 3 | SILICON | No | Power MOSFET | Enhancement | - | 10 A | EAR99 | Compliant | 8541.29.00.95 | IXYS CORP | - | IXYS Corporation | IXFR12N100F | 10 | - | 1000 | - | ±20 | - | - | 150 | 250000 | -40 | Through Hole | 1 | 1 | 150 °C | PLASTIC/EPOXY | ISOPLUS247, 3 PIN | 21.34(Max) | 16.13(Max) | RECTANGULAR | IN-LINE | 5.21(Max) | Transferred | - | 3 | No | HiperFET | NOT SPECIFIED | 5.71 | - | Yes | SOP | ISOPLUS 247 | Tab | - | 12 | 77 | 77@10V | 2700@25V | 9.8 | 31 | 12 | - | - | - | - | e1 | Yes | Unconfirmed | - | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AVALANCHE RATED | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | - | - | 3 | R-PSIP-T3 | Not Qualified | Single | - | ENHANCEMENT MODE | - | ISOLATED | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | 1.05 Ω | - | 48 A | 1000 V | N | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - |