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Microchip Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Lifecycle Status | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Diode Element Material | Number of Terminals | Base Product Number | Brand | Factory Pack QuantityFactory Pack Quantity | Forward Voltage-Max (VF) | If - Forward Current | Ihs Manufacturer | Ir - Reverse Current | Manufacturer Package Code | Manufacturer Part Number | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting Styles | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Pd - Power Dissipation | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Regulator Current (Max) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Schedule B | Unit Weight | Voltage - Anode - Cathode (Vak)(Max) | Voltage - Limiting (Max) | Vr - Reverse Voltage | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | Termination Style | JESD-30 Code | Qualification Status | Configuration | Max Supply Voltage | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Case Connection | Power - Max | Forward Current | Operating Temperature - Junction | Max Surge Current | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Product Type | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Reverse Current-Max | Recovery Time | Repetitive Peak Reverse Voltage | Reverse Recovery Time-Max | Reverse Recovery Time (trr) | Product | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Vf - Forward Voltage | Product Category | Diameter | Height | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 JAN1N1614 Microchip | 142 |
| - | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | NO | - | DO-203AA (DO-4) | SILICON | 1 | 1N1614 | Microchip / Microsemi | 1 | - | 15 A | MICROSEMI CORP | 500 uA | - | JAN1N1614 | + 175 C | Microchip Technology | - 65 C | - | Stud Mount | 1 | 175 °C | -65 °C | Bulk | METAL | METAL, DO-4, 1 PIN | ROUND | POST/STUD MOUNT | Active | DO-4 | - | - | Active | NOT SPECIFIED | - | 1.95 | N | No | - | - | - | - | - | 200 V | - | Tray | - | e0 | No | - | Standard Recovery Rectifiers | Tin/Lead (Sn/Pb) | - | - | POWER | - | 8541.10.00.80 | Diodes & Rectifiers | Standard, Reverse Polarity | UPPER | SOLDER LUG | NOT SPECIFIED | compliant | 1 | MIL-19500/162 | - | O-MUPM-D1 | Qualified | SINGLE | - | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 10 µA @ 200 V | 1.3 V @ 30 A | ANODE | - | - | -65°C ~ 200°C | 100 A | 15 A | 200 V | 16A | - | - | - | Rectifiers | 1 | - | - | - | 200 V | DO-203AA | - | - | 100 A | - | 8.3 ms | 200 | 5 µs | - | Rectifiers | - | - | 1.5 V | Rectifiers | - | - | - | - | - | ||
JANS1N5802US Microchip | 33 |
| - | - | Production (Last Updated: 2 months ago) | Surface Mount | Through Hole | A, Axial | YES | 2 | A, Axial | SILICON | 2 | - | Microchip / Microsemi | 1 | 0.875 V | 2.5 A | SENSITRON SEMICONDUCTOR | - | - | JANS1N5802US | - | Microchip Technology | - | - | SMD/SMT | 1 | 175 °C | - | Bulk | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | MELF | - | - | Active | NOT SPECIFIED | - | 5.26 | N | No | - | - | - | - | - | - | - | Waffle | Military, MIL-PRF-19500/477 | - | No | - | - | - | 175 °C | -65 °C | ULTRA FAST RECOVERY | HIGH RELIABILITY | 8541.10.00.80 | - | Standard | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | SMD/SMT | O-LELF-R2 | Qualified | SINGLE | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | - | 975 mV @ 2.5 A | ISOLATED | - | - | -65°C ~ 175°C | - | 2.5 A | 50 V | 1A | 975 mV | - | - | Rectifiers | 1 | 25 ns | 1 µA | 50 V | 50 V | - | 25pF @ 10V, 1MHz | 35 A | 35 A | - | - | - | 0.025 µs | 25 ns | Rectifiers | - | - | - | Rectifiers | - | 2.62 mm | 5.08 mm | 2.62 mm | No | ||
JANS1N6641US Microchip | 33 |
| - | - | - | - | Surface Mount | SQ-MELF, D | YES | - | D-5D | SILICON | 2 | - | Microchip / Microsemi | 1 | 1.1 V | - | SENSITRON SEMICONDUCTOR | - | - | JANS1N6641US | - | Microchip Technology | - | - | SMD/SMT | 1 | 175 °C | - | Bulk | UNSPECIFIED | O-XELF-R2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 5.14 | N | No | - | - | - | - | - | - | - | - | Military, MIL-PRF-19500/609 | - | No | EAR99 | - | - | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | Standard | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500/609D | - | O-XELF-R2 | Qualified | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 100 nA @ 50 V | 1.1 V @ 200 mA | ISOLATED | - | - | -65°C ~ 175°C | - | 0.3 A | 50 V | 300mA | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | 75 V | - | - | - | 2.5 A | - | - | - | 0.005 µs | 5 ns | - | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | - | ||
JANS1N5616US Microchip | 33 |
| - | - | Production (Last Updated: 2 months ago) | Surface Mount | Surface Mount | SQ-MELF, A | YES | 2 | A, SQ-MELF | SILICON | 2 | - | Microchip / Microsemi | 1 | - | - | MICROSEMI CORP | - | - | JANS1N5616US | - | Microchip Technology | - | - | SMD/SMT | 1 | - | - | Bulk | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 5.35 | N | No | - | - | - | - | - | - | - | Waffle | Military, MIL-PRF-19500/427 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | 200 °C | -65 °C | - | METALLURGICALLY BONDED | 8541.10.00.80 | Diodes & Rectifiers | Standard | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500/427K | SMD/SMT | O-LELF-R2 | Qualified | SINGLE | - | Single | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | - | 1.3 V @ 3 A | ISOLATED | - | - | -65°C ~ 200°C | - | 1 A | 400 V | 1A | 1.3 V | - | - | Rectifiers | - | 2 µs | 500 nA | 400 V | - | - | - | 30 A | - | - | - | - | 2 µs | 2 µs | Rectifiers | - | - | - | Rectifiers | - | 2.62 mm | 5.08 mm | 2.62 mm | No | ||
JANS1N6639 Microchip | In Stock | - | - | - | - | - | Through Hole | DO-204AH, DO-35, Axial | NO | - | DO-35 (DO-204AH) | SILICON | 2 | - | Microchip / Microsemi | 1 | 1.2 V | - | SENSITRON SEMICONDUCTOR | - | - | JANS1N6639 | - | Microchip Technology | - | - | - | 1 | 175 °C | - | Bulk | UNSPECIFIED | O-XALF-W2 | ROUND | LONG FORM | Active | DO-35 | - | - | Active | NOT SPECIFIED | - | 5.14 | N | No | - | - | - | - | - | - | - | Tray | Military, MIL-PRF-19500/609 | - | No | EAR99 | - | - | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | Standard | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500/609D | - | O-XALF-W2 | Qualified | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 100 nA @ 75 V | 1.2 V @ 500 mA | ISOLATED | - | - | -65°C ~ 175°C | - | 0.3 A | 75 V | 300mA | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | 75 V | - | - | - | 2.5 A | - | - | - | 0.004 µs | 4 ns | - | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | - | ||
JANTXV1N6642UBCA Microchip | 50 |
| - | - | - | - | Surface Mount | 3-SMD, No Lead | YES | - | UB | SILICON | 3 | 1N6642 | Microchip / Microsemi | 1 | 0.8 V | - | MICROSEMI CORP | - | - | JANTXV1N6642UBCA | - | Microchip Technology | - | - | - | 2 | 200 °C | - | Bulk | CERAMIC, METAL-SEALED COFIRED | CERAMIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Active | NOT SPECIFIED | - | 5.62 | N | No | - | - | - | - | - | - | - | Waffle | Military, MIL-PRF-19500/578 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | DUAL | NO LEAD | NOT SPECIFIED | unknown | 3 | MIL-19500/578E | - | R-CDSO-N3 | Qualified | COMMON ANODE, 2 ELEMENTS | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 500 nA @ 75 V | 1.2 V @ 100 mA | - | - | - | -65°C ~ 175°C | - | 0.3 A | 75 V | 300mA | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | 100 V | - | - | - | 2.5 A | - | - | - | 0.005 µs | 20 ns | - | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | - | ||
MSCD70-18 Microchip | In Stock | - | - | - | - | - | - | - | NO | - | - | SILICON | 3 | - | - | - | 1.48 V | - | MICROSEMI CORP | - | CASE D1 | MSCD70-18 | - | - | - | - | - | 2 | 150 °C | -40 °C | - | UNSPECIFIED | R-XUFM-X3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | 5.82 | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | GENERAL PURPOSE | UL RECOGNIZED | 8541.10.00.80 | - | - | UPPER | UNSPECIFIED | - | compliant | 3 | - | - | R-XUFM-X3 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | - | - | - | 70 A | - | - | - | - | - | - | 1 | - | - | - | 1800 V | - | - | - | 1400 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MSKD36-16 Microchip | In Stock | - | - | - | - | - | - | - | NO | - | - | SILICON | 3 | - | - | - | - | - | MICROSEMI CORP | - | CASE D1 | MSKD36-16 | - | - | - | - | - | 2 | 150 °C | -40 °C | - | UNSPECIFIED | R-XUFM-X3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | NOT SPECIFIED | - | 5.82 | - | - | - | - | - | - | - | - | - | - | - | e0 | No | EAR99 | - | TIN LEAD | - | - | GENERAL PURPOSE | UL RECOGNIZED | 8541.10.00.80 | - | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | 3 | - | - | R-XUFM-X3 | Not Qualified | COMMON CATHODE, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | - | - | - | 36 A | - | - | - | - | - | - | 1 | - | - | - | 1600 V | - | - | - | 650 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
JANTXV1N6642UBD Microchip | 44 |
| - | - | - | - | Surface Mount | 3-SMD, No Lead | YES | - | UB | SILICON | 3 | 1N6642 | Microchip / Microsemi | 1 | 0.8 V | - | MICROSEMI CORP | - | - | JANTXV1N6642UBD | - | Microchip Technology | - | - | - | 1 | 200 °C | - | Bulk | CERAMIC, METAL-SEALED COFIRED | CERAMIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Active | NOT SPECIFIED | - | 5.62 | N | No | - | - | - | - | - | - | - | Waffle | Military, MIL-PRF-19500/578 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | DUAL | NO LEAD | NOT SPECIFIED | unknown | 3 | MIL-19500/578E | - | R-CDSO-N3 | Qualified | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 500 nA @ 75 V | 1.2 V @ 100 mA | - | - | - | -65°C ~ 175°C | - | 0.3 A | 75 V | 300mA | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | 100 V | - | - | - | 2.5 A | - | - | - | 0.005 µs | 20 ns | - | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | - | ||
JANTX1N3595AUS Microchip | In Stock | - | - | - | - | - | - | - | YES | - | - | - | - | 1N3595 | Microchip / Microsemi | 1 | 0.7 V | 200 mA | MICROSEMI CORP | - | - | JANTX1N3595AUS | - | Microchip Technology | - | - | - | 1 | 175 °C | - | Bulk | - | - | - | - | Active | - | - | - | Active | - | - | 5.42 | N | No | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | 0.15 A | - | - | - | - | - | Rectifiers | - | - | - | - | 125 V | - | - | - | 4 A | - | - | - | 3 µs | - | Rectifiers | - | - | - | Rectifiers | - | - | - | - | - | ||
JANTXV1N5618US Microchip | 6 |
| - | - | Production (Last Updated: 2 months ago) | Surface Mount | Surface Mount | D-5A-2 | YES | - | D-5A | SILICON | 2 | 1N5618 | Microchip / Microsemi | 1 | - | - | MICROSEMI CORP | - | - | JANTXV1N5618US | - | Microchip Technology | - | - | SMD/SMT | 1 | - | - | Bulk | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 5.29 | Non-Compliant | No | - | 8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/85 | - | - | - | - | - | Bulk | Military, MIL-PRF-19500/427 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | 200 °C | -65 °C | - | METALLURGICALLY BONDED | 8541.10.00.80 | Diodes & Rectifiers | - | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500/427K | SMD/SMT | O-LELF-R2 | Qualified | SINGLE | - | Single | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 500 nA @ 600 V | 1.3 V @ 3 A | ISOLATED | - | - | -65°C ~ 200°C | - | 1 A | 600 V | 1A | - | 600 V | 1 A | Rectifiers | - | 2 µs | 500 nA | 600 V | - | - | - | 30 A | - | - | - | - | 2 µs | 2 µs | Rectifiers | - | - | - | Rectifiers | - | 2.62 mm | 5.08 mm | 2.62 mm | No | ||
JANTXV1N5311-1 Microchip | 15 |
| - | - | Production (Last Updated: 2 months ago) | Through Hole | Through Hole | DO-7-2 | NO | - | DO-7 | SILICON | 2 | 1N5311 | Microchip / Microsemi | 1 | - | - | MICROSEMI CORP | - | - | JANTXV1N5311-1 | - | Microchip Technology | - | - | Through Hole | 1 | - | - | Bulk | UNSPECIFIED | O-XALF-W2 | ROUND | LONG FORM | Active | DO-7 | - | 0.5 W | Active | NOT SPECIFIED | 3.96mA | 4.71 | N | No | - | - | - | 100V | 2.5V | - | -65°C ~ 175°C (TJ) | Bulk | Military, MIL-PRF-19500/463 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | 175 °C | -65 °C | - | METALLURGICALLY BONDED | 8541.10.00.70 | Diodes & Rectifiers | - | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500/463 | - | O-XALF-W2 | Qualified | SINGLE | 100 V | Single | - | CURRENT REGULATOR DIODE | - | - | ISOLATED | 500mW | - | - | - | - | - | - | - | - | - | Current Regulator Diodes | - | - | - | - | - | DO-35 | - | - | - | - | - | - | - | - | - | 3.6 mA | 2.5 V | - | Current Regulator Diodes | - | - | 7.62 mm | - | No | ||
JAN1N5313UR-1 Microchip | 44 |
| - | - | - | - | Surface Mount | DO-213AB-2 | YES | - | DO-213AB (MELF, LL41) | SILICON | 2 | 1N5313 | Microchip / Microsemi | 1 | - | - | MICROSEMI CORP | - | - | JAN1N5313UR-1 | - | Microchip Technology | - | 1 | SMD/SMT | 1 | 175 °C | -65 °C | Bulk | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | DO-213AB | - | 0.5 W | Active | NOT SPECIFIED | 4.73mA | 5.3 | N | No | - | - | 0.004021 oz | 100V | 2.75V | - | -65°C ~ 175°C (TJ) | Bulk | Military, MIL-PRF-19500/463 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | Diodes & Rectifiers | - | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | - | O-LELF-R2 | Qualified | SINGLE | - | - | - | CURRENT REGULATOR DIODE | - | - | ISOLATED | 500mW | - | - | - | - | - | - | - | - | - | Current Regulator Diodes | - | - | - | - | - | DO-213AB | - | - | - | - | - | - | - | - | - | 4.3 mA | 2.75 V | - | Current Regulator Diodes | - | - | 5.21 mm | - | - | ||
JANTX1N1202A Microchip | 111 |
| - | 24 Weeks | Production (Last Updated: 2 months ago) | Stud | Stud Mount | DO-203AA | NO | 2 | DO-203AA | SILICON | 1 | 1N1202 | Microchip / Microsemi | 1 | - | 12 A | MICROSEMI CORP | 5 uA | - | JANTX1N1202A | + 150 C | Microchip Technology | - 65 C | - | Stud Mount | 1 | 150 °C | -65 °C | Bulk | METAL | METAL, DO-4, 1 PIN | ROUND | POST/STUD MOUNT | Active | DO-4 | - | - | Active | NOT SPECIFIED | - | 1.89 | N | No | - | - | 0.335323 oz | - | - | 200 V | - | Tray | Military, MIL-PRF-19500/260 | e0 | No | - | Standard Recovery Rectifiers | Tin/Lead (Sn/Pb) | 125 °C | -55 °C | POWER | - | 8541.10.00.80 | Diodes & Rectifiers | - | UPPER | SOLDER LUG | NOT SPECIFIED | compliant | 1 | MIL-19500/260 | - | O-MUPM-D1 | Qualified | SINGLE | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 5 µA @ 200 V | 2.3 V @ 240 A | CATHODE | - | 12 A | -65°C ~ 150°C | 240 A | 12 A | 200 V | 12A | 1.2 V | - | - | Rectifiers | 1 | - | 10 µA | 200 V | 200 V | DO-203AA | - | 250 A | 240 A | - | 8.3 ms | 200 | 5 µs | - | Rectifiers | - | - | 2.3 V | Rectifiers | - | - | - | - | No | ||
JANTX1N1186R Microchip | In Stock | - | - | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | NO | - | DO-203AB (DO-5) | SILICON | 1 | 1N1186 | Microchip / Microsemi | 1 | - | - | MICROSEMI CORP | - | - | JANTX1N1186R | - | Microchip Technology | - | - | Stud Mount | 1 | 175 °C | -65 °C | Bulk | METAL | METAL, DO-5, 1 PIN | ROUND | POST/STUD MOUNT | Active | DO-5 | - | - | Active | NOT SPECIFIED | - | 5.32 | N | No | - | - | - | - | - | - | - | Tray | MIL-PRF-19500/297 | e0 | No | - | - | Tin/Lead (Sn/Pb) - hot dipped | - | - | POWER | - | 8541.10.00.80 | Diodes & Rectifiers | Standard, Reverse Polarity | UPPER | SOLDER LUG | NOT SPECIFIED | compliant | 1 | MIL-19500/297 | - | O-MUPM-D1 | Qualified | SINGLE | - | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 10 µA @ 200 V | 1.4 V @ 110 A | ANODE | - | - | -65°C ~ 175°C | - | 35 A | 200 V | 35A | - | - | - | Rectifiers | 1 | - | - | - | 200 V | DO-203AB | - | - | 500 A | - | - | 200 | - | - | Rectifiers | - | - | - | Rectifiers | - | - | - | - | - | ||
JANTXV1N6641 Microchip | 44 |
| - | - | - | - | Through Hole | D, Axial | NO | - | D-5B | SILICON | 2 | 1N6641 | Microchip / Microsemi | 1 | 1.1 V | - | SENSITRON SEMICONDUCTOR | - | - | JANTXV1N6641 | - | Microchip Technology | - | - | - | 1 | 175 °C | - | Bulk | UNSPECIFIED | O-XALF-W2 | ROUND | LONG FORM | Active | DO-35 | - | - | Active | NOT SPECIFIED | - | 5.14 | N | No | - | - | - | - | - | - | - | Bulk | Military, MIL-PRF-19500/609 | - | No | EAR99 | - | - | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500/609D | - | O-XALF-W2 | Qualified | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 100 nA @ 50 V | 1.1 V @ 200 mA | ISOLATED | - | - | -65°C ~ 175°C | - | 0.3 A | 50 V | 300mA | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | 75 V | - | - | - | 2.5 A | - | - | - | 0.005 µs | 5 ns | - | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | - | ||
JAN1N5550US Microchip | In Stock | - | - | - | - | - | Surface Mount | SQ-MELF, B | YES | - | D-5B | SILICON | 2 | - | - | - | 1.2 V | - | MICROSEMI CORP | - | - | JAN1N5550US | - | Microchip Technology | - | - | - | 1 | 175 °C | -65 °C | Bulk | GLASS | HERMETIC SEALED, GLASS, D-5B, SQ-MELF, B PACKAGE-2 | ROUND | LONG FORM | Active | - | - | - | Discontinued at Digi-Key | 20 | - | 2.5 | - | No | - | - | - | - | - | - | - | - | Military, MIL-PRF-19500/420 | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | POWER | HIGH RELIABILITY | 8541.10.00.80 | - | - | END | WRAP AROUND | 235 | compliant | - | MIL-19500 | - | O-LELF-R2 | Qualified | SINGLE | - | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 1 µA @ 200 V | 1.2 V @ 9 A | ISOLATED | - | - | -65°C ~ 175°C | - | 3 A | 200 V | 3A | - | - | - | - | 1 | - | - | - | 200 V | - | - | - | 100 A | 1 µA | - | - | 2 µs | 2 µs | - | - | - | - | - | - | - | - | - | - | ||
JANTX1N6622 Microchip | In Stock | - | - | - | - | - | Through Hole | A, Axial | NO | - | - | SILICON | 2 | 1N6622 | Microchip / Microsemi | 1 | 1.4 V | - | SENSITRON SEMICONDUCTOR | - | 106 | JANTX1N6622 | - | Microchip Technology | - | - | Through Hole | 1 | 150 °C | -65 °C | Bulk | GLASS | O-LALF-W2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 5.27 | N | No | - | - | 0.017637 oz | - | - | - | - | Bulk | Military, MIL-PRF-19500/585 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | ULTRA FAST RECOVERY | - | 8541.10.00.80 | - | - | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL | Axial | O-LALF-W2 | Qualified | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 500 nA @ 660 V | 1.4 V @ 1.2 A | ISOLATED | - | - | -65°C ~ 150°C | - | 1.2 A | 660 V | 2A | - | - | - | Rectifiers | 1 | - | - | - | 600 V | - | 10pF @ 10V, 1MHz | - | 20 A | - | - | - | 0.03 µs | 30 ns | Rectifiers | - | - | - | Rectifiers | 2.79 mm | - | 5.21 mm | - | - | ||
JANTX1N6621 Microchip | 44 |
| - | - | - | - | Through Hole | A-Package-2 | NO | - | - | SILICON | 2 | 1N6621 | Microchip / Microsemi | 1 | 1.6 V | 2 A | MICROSEMI CORP | 500 nA | - | JANTX1N6621 | + 150 C | Microchip Technology | - 65 C | - | Through Hole | 1 | 150 °C | -65 °C | Bulk | GLASS | O-LALF-W2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 1.96 | N | No | - | - | - | - | - | 440 V | - | Bulk | Military, MIL-PRF-19500/585 | e0 | No | EAR99 | Fast Recovery Rectifiers | Tin/Lead (Sn/Pb) | - | - | ULTRA FAST RECOVERY | HIGH RELIABILITY | 8541.10.00.80 | Diodes & Rectifiers | - | AXIAL | WIRE | NOT SPECIFIED | not_compliant | 2 | MIL-19500 | - | O-LALF-W2 | Qualified | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 500 nA @ 440 V | 1.4 V @ 1.2 A | ISOLATED | - | - | -65°C ~ 150°C | 20 A | 1.2 A | 440 V | 2A | - | - | - | Rectifiers | 1 | - | - | - | 400 V | - | 10pF @ 10V, 1MHz | - | 20 A | 0.5 µA | 45 ns | - | 0.045 µs | 30 ns | Rectifiers | - | - | 1.6 V | Rectifiers | - | - | - | - | - | ||
JAN1N5614US Microchip | In Stock | - | - | - | - | - | Surface Mount | D-5A-2 | YES | - | D-5A | SILICON | 2 | 1N5614 | Microchip / Microsemi | 1 | 1.3 V | 1 A | MICROSEMI CORP | 500 nA | - | JAN1N5614US | + 200 C | Microchip Technology | - 65 C | - | SMD/SMT | 1 | 175 °C | - | Bulk | GLASS | HERMETIC SEALED, GLASS PACKAGE-2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 1.9 | N | No | Rectifiers Std Rectifier | - | - | - | - | 200 V | - | Bulk | Military, MIL-PRF-19500/427 | e0 | No | EAR99 | Standard Recovery Rectifiers | Tin/Lead (Sn/Pb) | - | - | - | METALLURGICALLY BONDED | 8541.10.00.80 | - | - | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500/427K | - | O-LELF-R2 | Qualified | SINGLE | - | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 500 nA @ 200 V | 1.3 V @ 3 A | ISOLATED | - | - | -65°C ~ 200°C | 30 A | 1 A | 200 V | 1A | - | - | - | Rectifiers | - | - | - | - | 200 V | - | - | - | - | - | 2 us | - | 2 µs | 2 µs | Rectifiers | - | - | 1.3 V | Rectifiers | - | - | - | - | - |