- Mfr
- Package
- Product Status
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- Factory Pack QuantityFactory Pack Quantity
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- Minimum Operating Temperature
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Microchip Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Diode Element Material | Number of Terminals | Base Product Number | Brand | Factory Pack QuantityFactory Pack Quantity | Forward Voltage-Max (VF) | If - Forward Current | Ihs Manufacturer | Ir - Reverse Current | Manufacturer Part Number | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting Styles | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Pd - Power Dissipation | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Regulator Current (Max) | Risk Rank | RoHS | Rohs Code | Schedule B | Unit Weight | Voltage - Anode - Cathode (Vak)(Max) | Voltage - Limiting (Max) | Vr - Reverse Voltage | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | Termination Style | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Case Connection | Power - Max | Forward Current | Operating Temperature - Junction | Max Surge Current | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Product Type | Number of Phases | Operating Temperature Range | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Diode Configuration | Reverse Current-Max | Recovery Time | Repetitive Peak Reverse Voltage | Reverse Recovery Time-Max | Reverse Recovery Time (trr) | Product | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Vf - Forward Voltage | Product Category | Height | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 1N6763 Microchip | 2451 |
| - | - | - | - | Through Hole | TO-254-3, TO-254AA (Straight Leads) | NO | - | TO-254 | SILICON | 3 | 1N6763 | Microchip Technology | 1 | - | - | MICROSEMI CORP | - | 1N6763 | - | Microchip Technology | - | - | - | 2 | - | - | Bulk | PLASTIC/EPOXY | S-PSFM-P3 | SQUARE | FLANGE MOUNT | Active | TO-254AA | - | - | Active | - | - | 5.46 | N | No | - | - | - | - | - | - | Tray | Military, MIL-PRF-19500/642 | - | - | - | - | - | - | - | POWER | - | 8541.10.00.80 | Diodes & Rectifiers | Standard | SINGLE | PIN/PEG | - | compliant | 3 | - | - | S-PSFM-P3 | Not Qualified | COMMON CATHODE, 2 ELEMENTS | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 10 µA @ 100 V | 1.05 V @ 12 A | ISOLATED | - | - | -55°C ~ 175°C | - | 12 A | 100 V | 12A | Rectifiers | 1 | - | - | - | - | 100 V | TO-254AA | 300pF @ 5V, 1MHz | - | 165 A | - | - | - | - | 0.035 µs | 35 ns | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N3881 Microchip | 48 |
| - | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | - | - | DO-4 (DO-203AA) | - | - | 1N3881 | Microchip Technology | 1 | 1.4 V | - | GENESIC SEMICONDUCTOR INC | - | 1N3881 | - | Microchip Technology | - | - | - | 1 | 150 °C | - | Bulk | - | - | - | - | Active | - | - | - | Active | - | - | 2.11 | N | Yes | - | - | - | - | - | - | Tray | - | - | Yes | - | - | - | - | - | - | - | - | - | Standard | - | - | - | compliant | - | - | - | - | - | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 15 µA @ 200 V | 1.4 V @ 20 A | - | - | - | -65°C ~ 175°C | - | 6 A | 200 V | 6A | Rectifiers | - | - | - | - | - | 200 V | - | 115pF @ 10V, 1MHz | - | 90 A | - | - | - | - | 0.2 µs | 200 ns | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N647UR-1 Microchip | 296 |
| - | - | - | - | Surface Mount | DO-213AA (Glass) | YES | - | DO-213AA | SILICON | 2 | 1N647 | Microchip Technology | 1 | - | 400 mA | MICROSEMI CORP | 50 nA | 1N647UR-1 | + 175 C | Microchip Technology | - 65 C | 1 | SMD/SMT | 1 | - | - | Bulk | GLASS | HERMETIC SEALED, GLASS PACKAGE-2 | ROUND | LONG FORM | Active | DO-213AA | 500 mW | 0.5 W | Active | NOT SPECIFIED | - | 5.29 | N | No | - | 0.024077 oz | - | - | 400 V | - | Bulk | - | e0 | - | EAR99 | Standard Recovery Rectifiers | TIN LEAD | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | Diodes & Rectifiers | Standard | END | WRAP AROUND | NOT SPECIFIED | unknown | 2 | MIL | - | O-LELF-R2 | Not Qualified | SINGLE | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 50 nA @ 400 V | 1 V @ 400 mA | ISOLATED | - | - | -65°C ~ 175°C | 5 A | 0.4 A | 400 V | 400mA | Rectifiers | - | - | - | - | - | - | DO-213AA | - | - | - | Single | - | - | 400 | - | - | Rectifiers | - | - | 1 V | Rectifiers | - | - | - | - | ||
1N4148UB2 Microchip | 37 |
| - | - | - | - | Surface Mount | 2-SMD, No Lead | YES | - | UB2 | - | - | 1N4148 | Microchip Technology | 1 | 0.8 V | - | MICROSEMI CORP | - | 1N4148UB2 | - | Microchip Technology | - | - | - | 1 | 200 °C | - | Bulk | - | - | - | - | Active | - | - | - | Active | - | - | 5.74 | N | Yes | - | - | - | - | - | - | Waffle | - | e4 | - | EAR99 | - | Gold (Au) - with Nickel (Ni) barrier | - | - | - | - | - | - | Standard | - | - | - | compliant | - | - | - | - | - | SINGLE | - | Small Signal =< 200mA (Io), Any Speed | RECTIFIER DIODE | 500 nA @ 75 V | 1.2 V @ 100 mA | - | - | - | -65°C ~ 200°C | - | 0.2 A | 75 V | 200mA | Diodes - General Purpose, Power, Switching | - | - | - | - | - | 75 V | - | 4pF @ 0V, 1MHz | - | 2 A | - | - | - | - | 0.005 µs | 5 ns | - | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | ||
1N6080US Microchip | 46 |
| - | - | - | - | Surface Mount | SQ-MELF, G | YES | - | G-MELF (D-5C) | SILICON | 2 | - | - | - | 1.5 V | - | MICROSEMI CORP | - | 1N6080US | - | Microchip Technology | - | - | - | 1 | 155 °C | - | Bulk | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | MELF | - | - | Discontinued at Digi-Key | NOT SPECIFIED | - | 5.55 | - | No | - | - | - | - | - | - | - | - | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | ULTRA FAST RECOVERY POWER | HIGH RELIABILITY | 8541.10.00.80 | - | Standard | END | WRAP AROUND | NOT SPECIFIED | not_compliant | 2 | - | - | O-LELF-R2 | Not Qualified | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 10 µA @ 100 V | 1.5 V @ 37.7 A | ISOLATED | - | - | -65°C ~ 155°C | - | 2 A | 100 V | 2A | - | 1 | - | - | - | - | 100 V | - | - | - | 175 A | - | - | - | - | 0.03 µs | 30 ns | - | - | - | - | - | - | - | - | - | ||
1N3293A Microchip | 37 |
| - | Production (Last Updated: 2 months ago) | - | - | Stud Mount | DO-205AA, DO-8, Stud | NO | - | DO-205AA (DO-8) | SILICON | 1 | 1N3293 | Microchip Technology | 1 | 1.5 V | - | GENESIC SEMICONDUCTOR INC | - | 1N3293A | - | Microchip Technology | - | - | - | 1 | 150 °C | -55 °C | Bulk | METAL | DO-8, 1 PIN | ROUND | POST/STUD MOUNT | Contact Manufacturer | - | - | - | Active | - | - | 5.05 | N | - | - | - | - | - | - | - | Tray | - | - | Yes | - | - | - | - | - | GENERAL PURPOSE | - | - | Diodes & Rectifiers | Standard | UPPER | HIGH CURRENT CABLE | - | compliant | - | - | - | O-MUPM-H1 | - | SINGLE | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 50 µA @ 600 V | 1.1 V @ 200 A | CATHODE | - | - | -65°C ~ 200°C | - | 100 A | 600 V | 150A | Rectifiers | 1 | - | - | - | - | 600 V | DO-205AA | - | - | 2300 A | - | 17000 µA | - | - | - | - | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N3891A Microchip | 37 |
| - | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | - | - | DO-203AA (DO-4) | - | - | 1N3891 | Microchip Technology | 1 | - | - | SENSITRON SEMICONDUCTOR | - | 1N3891A | - | Microchip Technology | - | - | - | - | - | - | Bulk | - | - | - | - | Active | - | - | - | Active | - | - | 5.65 | N | - | - | - | - | - | - | - | Tray | Military, MIL-PRF-19500/304 | - | - | - | - | - | - | - | - | - | - | Diodes & Rectifiers | Standard | - | - | - | compliant | - | - | - | - | - | - | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 10 µA @ 200 V | 1.5 V @ 38 A | - | - | - | -65°C ~ 175°C | - | - | 200 V | 20A | Rectifiers | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 ns | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N484B Microchip | 20 |
| - | - | - | - | Through Hole | DO-204AH, DO-35, Axial | NO | - | DO-35 | SILICON | 2 | 1N484 | Microchip Technology | 1 | - | - | MICROSEMI CORP | - | 1N484B | - | Microchip Technology | - | - | - | 1 | 200 °C | -65 °C | Bulk | GLASS | - | ROUND | LONG FORM | Active | - | - | 0.25 W | Active | NOT SPECIFIED | - | 5.55 | N | No | - | - | - | - | - | - | Bulk | - | e0 | No | EAR99 | - | TIN LEAD | - | - | - | - | 8541.10.00.70 | Diodes & Rectifiers | Standard | AXIAL | WIRE | NOT SPECIFIED | unknown | - | - | - | O-LALF-W2 | Not Qualified | SINGLE | - | Small Signal =< 200mA (Io), Any Speed | RECTIFIER DIODE | 25 nA @ 125 V | 1 V @ 100 mA | ISOLATED | - | - | -65°C ~ 200°C | - | 0.2 A | 125 V | 200mA | Rectifiers | - | - | - | - | - | - | DO-35 | - | - | - | - | - | - | - | - | - | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N1344 Microchip | In Stock | - | - | Production (Last Updated: 2 months ago) | - | - | Stud Mount | DO-203AA, DO-4, Stud | NO | - | DO-4 (DO-203AA) | SILICON | 1 | 1N1344 | Microchip Technology | 1 | 1.2 V | - | MICROSEMI CORP | - | 1N1344 | - | Microchip Technology | - | - | Stud Mount | 1 | 200 °C | -65 °C | Bulk | METAL | DO-4, 1 PIN | ROUND | POST/STUD MOUNT | Active | DO-4 | - | - | Active | NOT SPECIFIED | - | 5.14 | N | No | - | - | - | - | - | - | Tray | - | e0 | No | - | - | TIN LEAD | - | - | POWER | - | 8541.10.00.80 | - | Standard | UPPER | SOLDER LUG | NOT SPECIFIED | unknown | 1 | - | - | O-MUPM-D1 | Not Qualified | SINGLE | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 10 µA @ 200 V | 1.3 V @ 30 A | CATHODE | - | - | -65°C ~ 200°C | - | 16 A | 200 V | 16A | Rectifiers | 1 | - | - | - | - | 200 V | DO-203AA | - | - | 200 A | - | - | - | - | 5 µs | - | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N6625 Microchip | 20 |
| - | - | - | - | Through Hole | A, Axial | NO | - | A, Axial | SILICON | 2 | 1N6625 | Microchip Technology / Atmel | 1 | - | 1.5 A | MICROSEMI CORP | 1 uA | 1N6625 | + 150 C | Microchip Technology | - 65 C | - | Through Hole | 1 | 150 °C | -65 °C | Bulk | GLASS | HERMETIC SEALED, GLASS PACKAGE-2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 5.19 | N | No | - | 0.034463 oz | - | - | 1.1 kV | - | Bulk | - | e0 | No | EAR99 | Fast Recovery Rectifiers | TIN LEAD | - | - | - | HIGH RELIABILITY | 8541.10.00.80 | Diodes & Rectifiers | - | AXIAL | WIRE | NOT SPECIFIED | unknown | 2 | - | - | O-LALF-W2 | Not Qualified | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 1 µA @ 1100 V | 1.75 V @ 1 A | ISOLATED | - | - | -65°C ~ 150°C | 20 A | 1 A | 1100 V | 1A | Rectifiers | - | - | 80 | - | - | 1000 V | - | 10pF @ 10V, 1MHz | - | - | Single | - | 60 ns | 1100 | 0.08 µs | 60 ns | Rectifiers | - | - | 1.75 V | Rectifiers | - | - | - | - | ||
1N6540 Microchip | In Stock | - | - | - | Lead, Tin | Through Hole | - | - | NO | - | - | SILICON | 2 | 1N6540 | Microchip Technology | 1 | - | - | MICROSEMI CORP | - | 1N6540 | - | Microchip Technology | - | - | - | - | - | - | Bulk | GLASS | O-LALF-W2 | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 5.8 | Non-Compliant | No | - | - | - | - | - | - | Bulk | * | e0 | No | EAR99 | - | TIN LEAD | - | - | - | - | 8541.10.00.80 | Diodes & Rectifiers | - | AXIAL | WIRE | NOT SPECIFIED | compliant | - | - | - | O-LALF-W2 | Not Qualified | - | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | 1 A | - | - | 1 A | - | - | Rectifiers | - | - | - | - | 800 V | - | - | - | - | - | - | - | - | - | 0.03 µs | - | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N485A Microchip | In Stock | - | - | - | - | - | Through Hole | DO-204AA, DO-7, Axial | NO | - | DO-7 | SILICON | 2 | 1N485 | Microchip Technology | 1 | - | - | MICROSEMI CORP | - | 1N485A | - | Microchip Technology | - | - | - | 1 | - | - | Bulk | GLASS | O-LALF-W2 | ROUND | LONG FORM | Active | DO-7 | - | 0.5 W | Active | NOT SPECIFIED | - | 5.69 | N | No | - | - | - | - | - | - | Bulk | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | Diodes & Rectifiers | Standard | AXIAL | WIRE | NOT SPECIFIED | not_compliant | 2 | - | - | O-LALF-W2 | Not Qualified | SINGLE | - | Small Signal =< 200mA (Io), Any Speed | RECTIFIER DIODE | 25 nA @ 180 V | 1 V @ 100 mA | ISOLATED | - | - | -65°C ~ 175°C | - | 0.2 A | 180 V | 100mA | Diodes - General Purpose, Power, Switching | - | - | - | - | - | - | DO-7 | - | - | - | - | - | - | - | - | - | - | - | - | - | Diodes - General Purpose, Power, Switching | - | - | - | - | ||
1N6620 Microchip | 46 |
| - | - | - | - | Through Hole | A, Axial | NO | - | A, Axial | SILICON | 2 | 1N6620 | Microchip Technology | 1 | 1.6 V | - | MICROSEMI CORP | - | 1N6620 | - | Microchip Technology | - | - | Through Hole | 1 | 150 °C | -65 °C | Bulk | GLASS | HERMETIC SEALED, GLASS, A, 2 PIN | ROUND | LONG FORM | Active | - | - | - | Active | NOT SPECIFIED | - | 5.31 | N | No | - | - | - | - | - | - | Bulk | - | - | - | EAR99 | - | - | - | - | ULTRA FAST RECOVERY | HIGH RELIABILITY | 8541.10.00.80 | Diodes & Rectifiers | - | AXIAL | WIRE | NOT SPECIFIED | unknown | 2 | - | - | O-LALF-W2 | Not Qualified | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 500 nA @ 220 V | 1.4 V @ 1.2 A | ISOLATED | - | - | -65°C ~ 150°C | - | 1.2 A | 220 V | 1.2A | Rectifiers | 1 | - | - | - | - | 200 V | - | 10pF @ 10V, 1MHz | - | 20 A | - | 0.5 µA | - | - | 0.045 µs | 30 ns | Rectifiers | - | - | - | Rectifiers | - | - | - | - | ||
1N1127 Microchip | 37 |
| - | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | NO | - | DO-4 (DO-203AA) | SILICON | 1 | 1N1127 | Microchip Technology | 1 | 1.1 V | 12 A | MICROSEMI CORP | 10 uA | 1N1127 | + 200 C | Microchip Technology | - 65 C | - | Stud Mount | 1 | 200 °C | -65 °C | Bulk | METAL | GLASS METAL, DO203AA(DO4), 1 PIN | ROUND | POST/STUD MOUNT | Active | DO-203AA | - | - | Active | NOT SPECIFIED | - | 5.44 | N | No | - | - | - | - | 500 V | - | Tray | - | e0 | No | - | Standard Recovery Rectifiers | TIN LEAD | - | - | POWER | - | 8541.10.00.80 | - | Standard | UPPER | SOLDER LUG | NOT SPECIFIED | unknown | 1 | - | - | O-MUPM-D1 | Not Qualified | SINGLE | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 10 µA @ 500 V | 1.2 V @ 30 A | CATHODE | - | - | -65°C ~ 200°C | 250 A | 12 A | 500 V | 12A | Rectifiers | 1 | - 65 C to + 200 C | - | - | - | 500 V | DO-203AA | - | - | 250 A | - | - | - | - | 5 µs | - | Rectifiers | - | - | 1.2 V | Rectifiers | - | - | - | - | ||
1N1128A Microchip | 37 |
| - | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | NO | - | DO-203AA (DO-4) | SILICON | 1 | - | - | - | 1.2 V | - | MICROSEMI CORP | - | 1N1128A | - | Microchip Technology | - | - | - | 1 | 200 °C | - | Bulk | METAL | METAL, DO-4, 1 PIN | ROUND | POST/STUD MOUNT | Active | DO-4 | - | - | Active | NOT SPECIFIED | - | 5.3 | - | No | - | - | - | - | - | - | - | - | e0 | No | - | - | TIN LEAD | - | - | POWER | - | 8541.10.00.80 | - | Standard | UPPER | SOLDER LUG | NOT SPECIFIED | unknown | 1 | MIL-19500/260G | - | O-MUPM-D1 | Not Qualified | SINGLE | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 5 µA @ 600 V | 2.2 V @ 10 A | CATHODE | - | - | -65°C ~ 150°C | - | 3.3 A | 600 V | - | - | 1 | - | - | - | - | 600 V | DO-203AA | - | - | 25 A | - | - | - | - | 0.5 µs | - | - | - | - | - | - | - | - | - | - | ||
APT15DQ60KG Microchip | 7181 | - | - | - | - | - | Through Hole | TO-220-2 | NO | - | TO-220 [K] | SILICON | 2 | APT15DQ60 | - | - | 2.4 V | 15 A | MICROSEMI CORP | 25 uA | APT15DQ60KG | + 175 C | Microchip Technology | - 55 C | - | Through Hole | 1 | 175 °C | -55 °C | Tube | PLASTIC/EPOXY | ROHS COMPLIANT, TO-220, 2 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AC | - | - | Active | NOT SPECIFIED | - | 1.89 | - | Yes | - | - | - | - | 600 V | - | - | - | - | Yes | EAR99 | Fast Recovery Rectifiers | Pure Matte Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE, LOW NOISE | 8541.10.00.80 | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 | - | - | R-PSFM-T2 | Not Qualified | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 25 µA @ 600 V | 2.4 V @ 15 A | CATHODE | - | - | -55°C ~ 175°C | 110 A | 15 A | 600 V | 15A | - | 1 | - | 19 | - | - | 600 V | TO-220AC | - | - | 110 A | Single | - | 15 ns | 600 | 0.019 µs | 19 ns | - | - | - | 2 V | - | - | - | - | - | ||
APT60D60BG Microchip | 27 |
| - | - | - | - | Through Hole | TO-247-2 | YES | - | TO-247 [B] | SILICON | 2 | APT60D60 | Microchip Technology / Atmel | 1 | 1.8 V | 60 A | MICROSEMI CORP | 250 uA | APT60D60BG | + 175 C | Microchip Technology | - 55 C | - | Through Hole | 1 | 175 °C | -55 °C | Tube | PLASTIC/EPOXY | ROHS COMPLIANT PACKAGE-2 | RECTANGULAR | SMALL OUTLINE | Active | TO-247 | - | - | Active | NOT SPECIFIED | - | 1.46 | Details | Yes | - | 0.229281 oz | - | - | 600 V | - | Tube | - | e1 | Yes | - | Fast Recovery Rectifiers | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | ULTRA FAST SOFT RECOVERY | FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT, LOW NOISE, HIGH RELIABILITY | 8541.10.00.80 | - | Standard | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 | - | - | R-PSFM-T2 | Not Qualified | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | RECTIFIER DIODE | 250 µA @ 600 V | 1.8 V @ 60 A | CATHODE | - | - | -55°C ~ 175°C | 600 A | 60 A | 600 V | 60A | Rectifiers | 1 | - | 130 | - | - | 600 V | TO-247 | - | - | 600 A | Single | - | 40 ns | 600 | 0.04 µs | 130 ns | Rectifiers | - | - | 1.6 V | Rectifiers | 5.31 mm | 21.46 mm | 16.26 mm | - | ||
JANTX1N1616 Microchip | 48 |
| - | - | - | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | NO | - | DO-203AA (DO-4) | SILICON | 1 | - | - | - | - | - | MICROSEMI CORP | - | JANTX1N1616 | - | Microchip Technology | - | - | - | 1 | 175 °C | -65 °C | Bulk | METAL | METAL, DO-4, 1 PIN | ROUND | POST/STUD MOUNT | Active | DO-4 | - | - | Discontinued at Digi-Key | NOT SPECIFIED | - | 2 | - | No | - | - | - | - | - | - | - | Military, MIL-PRF-19500/162 | e0 | No | - | - | Tin/Lead (Sn/Pb) | - | - | POWER | - | 8541.10.00.80 | - | - | UPPER | SOLDER LUG | NOT SPECIFIED | compliant | 1 | MIL-19500/162 | - | O-MUPM-D1 | Qualified | SINGLE | - | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 50 µA @ 600 V | 1.5 V @ 15 A | ANODE | - | - | -65°C ~ 175°C | - | 15 A | 600 V | 15A | - | 1 | - | - | - | - | 600 V | DO-203AA | - | - | 100 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
JAN1N5308-1 Microchip | 48 |
| - | - | - | - | Through Hole | DO-7-2 | NO | - | DO-7 | SILICON | 2 | 1N5308 | Microchip / Microsemi | 1 | - | - | MICROSEMI CORP | - | JAN1N5308-1 | - | Microchip Technology | - | - | Through Hole | 1 | - | - | Bulk | UNSPECIFIED | DO-35, 2 PIN | ROUND | LONG FORM | Active | - | - | 0.5 W | Active | NOT SPECIFIED | 2.97mA | 1.38 | N | No | - | - | 100V | 2.15V | - | -65°C ~ 175°C (TJ) | - | Military, MIL-PRF-19500/463 | e0 | No | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | METALLURGICALLY BONDED | 8541.10.00.70 | Diodes & Rectifiers | - | AXIAL | WIRE | NOT SPECIFIED | compliant | - | MIL-19500/463 | - | O-XALF-W2 | Qualified | SINGLE | - | - | CURRENT REGULATOR DIODE | - | - | ISOLATED | 500mW | - | - | - | - | - | - | Current Regulator Diodes | - | - | - | - | - | - | DO-35 | - | - | - | - | - | - | - | - | - | - | 2.7 mA | 2.15 V | - | Current Regulator Diodes | - | 7.62 mm | - | - | ||
JAN1N5554US Microchip | 46 |
| - | Production (Last Updated: 2 months ago) | - | Surface Mount | Surface Mount | B-SQ-MELF-2 | YES | 2 | D-5B | SILICON | 2 | 1N5554 | Microchip / Microsemi | 1 | 1.3 V | - | MICROSEMI CORP | - | JAN1N5554US | - | Microchip Technology | - | - | SMD/SMT | 1 | 175 °C | -65 °C | Bulk | GLASS | HERMETIC SEALED, GLASS, D-5B, SQ-MELF, B PACKAGE-2 | ROUND | LONG FORM | Active | - | - | - | Active | 20 | - | 2.47 | N | No | 8541100080, 8541100080/8541100080, 8541100080/8541100080/8541100080, 8541100080/8541100080/8541100080/8541100080 | 0.019013 oz | - | - | - | - | Bulk | Military, MIL-PRF-19500/420 | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | 175 °C | -65 °C | POWER | HIGH RELIABILITY | 8541.10.00.80 | - | - | END | WRAP AROUND | 235 | compliant | 2 | MIL-19500 | SMD/SMT | O-LELF-R2 | Qualified | SINGLE | Single | Standard Recovery >500ns, > 200mA (Io) | RECTIFIER DIODE | 1 µA @ 1000 V | 1.3 V @ 9 A | ISOLATED | - | 5 A | -65°C ~ 175°C | - | 3 A | 1000 V | 5A | Rectifiers | 1 | - | 2 µs | 1 µA | 1 kV | 1000 V | - | - | 100 A | 100 A | - | 1 µA | - | - | 2 µs | 2 µs | Rectifiers | - | - | - | Rectifiers | 2.16 mm | 4.95 mm | 2.16 mm | No |