- Base Product Number
- Collector- Emitter Voltage VCEO Max
- Factory Pack QuantityFactory Pack Quantity
- Maximum Gate Emitter Voltage
- Maximum Operating Temperature
- Mfr
- Minimum Operating Temperature
- Mounting Styles
- Package
- Package / Case
- Packaging
- Pd - Power Dissipation
Attribute column
Manufacturer
Microchip Transistors - IGBTs - Modules
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Lifecycle Status | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Number of Terminals | Transistor Element Material | Base Product Number | Collector- Emitter Voltage VCEO Max | Collector-Emitter Breakdown Voltage | Current-Collector (Ic) (Max) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting Styles | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Pd - Power Dissipation | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Test Conditions | Tradename | Turn Off Delay Time | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | Unit Weight | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Power Dissipation | Case Connection | Input Type | Turn On Delay Time | Power - Max | Transistor Application | Polarity/Channel Type | Input | Collector Emitter Voltage (VCEO) | Max Collector Current | Operating Temperature Range | Current - Collector Cutoff (Max) | JEDEC-95 Code | Voltage - Collector Emitter Breakdown (Max) | Input Capacitance | Power Dissipation-Max (Abs) | Vce(on) (Max) @ Vge, Ic | Collector Current-Max (IC) | Max Junction Temperature (Tj) | Continuous Collector Current | IGBT Type | Collector-Emitter Voltage-Max | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Gate-Emitter Thr Voltage-Max | Product | Height | Length | Width | Radiation Hardening |
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 APTGL475U120DAG Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SP6 | - | - | SP6 | - | - | - | APTGL475 | 1.2 kV | - | 610 A | 1 | MICROSEMI CORP | - | APTGL475U120DAG | 20 V | + 100 C | Microchip Technology | - 40 C | - | Chassis Mount | 1 | 175 °C | - | Bulk | - | - | - | - | Active | - | 2.307 kW | Active | - | 5.69 | Details | Yes | - | - | - | - | - | - | 3.880136 oz | -40°C ~ 175°C (TJ) | Tube | - | - | - | EAR99 | - | - | - | - | - | - | - | - | compliant | - | - | - | Single | - | 2.307 | - | - | - | 2307 W | - | - | Standard | - | - | - | 4 mA | - | 1200 V | - | 2307 W | 2.2V @ 15V, 400A | 610 A | - | 610 | Trench Field Stop | 1200 V | - | - | - | - | No | 20 V | 24.6 nF @ 25 V | 2.2 V | - | IGBT Silicon Modules | - | - | - | - | ||
APT46GA90JD40 Microchip Technology | In Stock | - | - | Production (Last Updated: 2 months ago) | Chassis Mount, Screw | Chassis Mount | SOT-227-4 | - | 4 | ISOTOP® | 30.000004 g | - | - | APT46GA90 | 900 V | 900 V | 87 A | 1 | - | - | - | 30 V | + 150 C | Microchip Technology | - 55 C | - | Chassis Mount | - | - | - | Tube | - | - | - | - | - | - | 284 W | Active | - | - | Details | - | - | - | POWER MOS 8, ISOTOP | - | - | - | 1.058219 oz | -55°C ~ 150°C (TJ) | Tube | POWER MOS 8™ | - | - | - | - | 150 °C | -55 °C | - | 284 W | - | - | - | - | - | - | - | Single | Single | 284 | - | - | - | 284 W | - | - | Standard | 900 V | 87 A | - 55 C to + 150 C | 350 µA | - | 900 V | 4.17 nF | - | 3.1V @ 15V, 47A | - | - | 87 | PT | - | - | - | - | - | No | - | 4.17 nF @ 25 V | - | - | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | No | ||
APT85GR120JD60 Microchip Technology | In Stock | - | - | - | - | Chassis Mount | ISOTOP-4 | - | - | SOT-227 | - | - | - | APT85GR120 | 1200 V | - | 116 A | 1 | - | - | - | 30 V | + 150 C | Microchip Technology | - 55 C | - | SMD/SMT | - | - | - | Tube | - | - | - | - | - | - | 595 W | Active | - | - | Details | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 595 | - | - | - | 543 W | - | - | Standard | - | - | - | 1.1 mA | - | 1200 V | - | - | 3.2V @ 15V, 85A | - | - | 118 | NPT | - | - | - | - | - | No | - | 8.4 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | - | ||
APT85GR120L Microchip Technology | In Stock | - | - | - | - | Through Hole | TO-264-3 | NO | - | TO-264 | - | 3 | SILICON | APT85GR120 | 1200 V | - | 170 A | 1 | MICROSEMI CORP | - | APT85GR120L | 30 V | + 150 C | Microchip Technology | - 55 C | - | Through Hole | 1 | 150 °C | -55 °C | Tube | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | 962 W | Active | - | 2.15 | Details | Yes | - | 600V, 85A, 4.3Ohm, 15V | - | - | 445 ns | 113 ns | 0.352740 oz | -55°C ~ 150°C (TJ) | Tube | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | compliant | - | R-PSFM-T3 | - | Single | - | 962 | COLLECTOR | Standard | - | 962 W | MOTOR CONTROL | N-CHANNEL | - | - | - | - | - | TO-264AA | 1200 V | - | 962 W | 3.2V @ 15V, 85A | 170 A | - | 170 | NPT | 1200 V | 660 nC | 340 A | 43ns/300ns | 6mJ (on), 3.8mJ (off) | - | 30 V | - | - | 6.5 V | IGBT Silicon Modules | - | - | - | - | ||
APT150GT120JR Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SOT-227-4 | - | - | ISOTOP® | - | - | - | APT150 | 1200 V | - | 170 A | 1 | - | - | - | 20 V | + 150 C | Microchip Technology | - 55 C | - | Chassis Mount | - | - | - | Tube | - | - | - | - | - | - | 830 W | Active | - | - | Details | - | - | - | Thunderbolt IGBT, ISOTOP | - | - | - | 1.058219 oz | -55°C ~ 150°C (TJ) | Tube | Thunderbolt IGBT® | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | 830 W | - | - | Standard | - | - | - 55 C to + 150 C | 150 µA | - | 1200 V | - | - | 3.7V @ 15V, 150A | - | - | - | NPT | - | - | - | - | - | No | - | 9.3 nF @ 25 V | - | - | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | - | ||
APTGLQ100DA120T1G Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SP1 | - | - | SP1 | - | - | - | APTGLQ100 | 1200 V | - | 170 A | 1 | - | - | - | 20 V | + 125 C | Microchip Technology | - 40 C | - | Chassis Mount | - | - | - | Bulk | - | - | - | - | - | - | 520 W | Active | - | - | - | - | - | - | - | - | - | - | 2.821917 oz | -40°C ~ 175°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | 520 W | - | - | Standard | - | - | - | 50 µA | - | 1200 V | - | - | 2.42V @ 15V, 100A | - | - | - | Trench Field Stop | - | - | - | - | - | Yes | - | 6.15 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | - | ||
APTGT50DDA60T3G Microchip Technology | In Stock | - | - | Production (Last Updated: 2 months ago) | Chassis Mount, Screw | Chassis Mount | SP3-32 | - | 32 | SP3 | - | - | - | APTGT50 | 600 V | 600 V | 80 A | 1 | - | - | - | 20 V | + 100 C | Microchip Technology | - 40 C | - | Chassis Mount | - | - | - | Bulk | - | - | - | - | - | - | 176 W | Active | - | - | Details | - | - | - | - | - | - | - | - | -40°C ~ 175°C (TJ) | Tube | - | - | - | - | - | 175 °C | -40 °C | - | 176 W | - | - | - | - | - | - | - | Dual | Dual | - | - | - | - | 176 W | - | - | Standard | 600 V | 80 A | - | 250 µA | - | 600 V | 3.15 nF | - | 1.9V @ 15V, 50A | - | - | 80 | Trench Field Stop | - | - | - | - | - | Yes | - | 3.15 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | No | ||
APT200GN60JDQ4 Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SOT-227-4 | NO | - | ISOTOP® | - | 4 | SILICON | APT200 | 600 V | - | 283 A | 1 | MICROSEMI CORP | ISOTOP | APT200GN60JDQ4 | 20 V | + 175 C | Microchip Technology | - 55 C | - | Chassis Mount | 1 | 175 °C | - | Tube | PLASTIC/EPOXY | ISOTOP-4 PIN | RECTANGULAR | FLANGE MOUNT | Active | ISOTOP | 682 W | Active | NOT SPECIFIED | 1.52 | Details | Yes | - | - | ISOTOP | - | 660 ns | 130 ns | 1.058219 oz | -55°C ~ 175°C (TJ) | Tube | - | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | - | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | 4 | R-PUFM-X4 | Not Qualified | Single | - | 682 | ISOLATED | - | - | 682 W | POWER CONTROL | N-CHANNEL | Standard | - | - | - 55 C to + 175 C | 50 µA | - | 600 V | - | 682 W | 1.85V @ 15V, 200A | 283 A | - | 283 | Trench Field Stop | 600 V | - | - | - | - | No | 20 V | 14.1 nF @ 25 V | - | - | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | - | ||
APT150GN120JDQ4 Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SOT-227-4 | - | - | ISOTOP® | - | - | - | APT150 | 1.2 kV | - | 215 A | 1 | - | - | - | 30 V | + 150 C | Microchip Technology | - 55 C | - | Chassis Mount | - | - | - | Tube | - | - | - | - | - | - | 625 W | Active | - | - | Details | - | - | - | ISOTOP | - | - | - | 1.058219 oz | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 625 | - | - | - | 625 W | - | - | Standard | - | - | - 55 C to + 150 C | 300 µA | - | 1200 V | - | - | 2.1V @ 15V, 150A | - | - | 215 | Trench Field Stop | - | - | - | - | - | No | - | 9.5 nF @ 25 V | - | - | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | - | ||
APTGT75SK120TG Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SP4 | - | - | SP4 | - | - | - | APTGT75 | 1.2 kV | - | 110 A | 1 | - | - | - | 20 V | + 125 C | Microchip Technology | - 40 C | - | Chassis Mount | - | - | - | Bulk | - | - | - | - | - | - | 357 W | Active | - | - | Details | - | - | - | - | - | - | - | 3.880136 oz | -40°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | 357 W | - | - | Standard | - | - | - | 250 µA | - | 1200 V | - | - | 2.1V @ 15V, 75A | - | - | 110 | Trench Field Stop | - | - | - | - | - | Yes | - | 5.34 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | - | ||
APTGT50X60T3G Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SP-3 | NO | - | SP3 | - | 25 | SILICON | APTGT50 | 600 V | - | 80 A | 1 | MICROSEMI CORP | - | APTGT50X60T3G | 20 V | + 175 C | Microchip Technology | - 40 C | 1 | Chassis Mount | 6 | 175 °C | - | Bulk | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X25 | RECTANGULAR | FLANGE MOUNT | Active | - | 176 W | Active | NOT SPECIFIED | 5.71 | Details | Yes | - | - | - | - | 310 ns | 170 ns | 7.863095 oz | -40°C ~ 175°C (TJ) | Tube | - | e1 | Yes | EAR99 | TIN SILVER COPPER | - | - | - | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | 25 | R-XUFM-X25 | Not Qualified | 3-Phase Inverter | - | 176 | ISOLATED | - | - | 176 W | MOTOR CONTROL | N-CHANNEL | Standard | - | - | - 40 C to + 175 C | 250 µA | - | 600 V | - | 176 W | 1.9V @ 15V, 50A | 80 A | - | 80 | Trench Field Stop | 600 V | - | - | - | - | Yes | 20 V | 3.15 nF @ 25 V | 1.9 V | - | IGBT Silicon Modules | 11.5 mm | 73.4 mm | 40.8 mm | - | ||
APTGT300H60G Microchip Technology | In Stock | - | - | Production (Last Updated: 2 months ago) | Chassis Mount, Screw | Chassis Mount | SP6 | NO | 12 | SP6 | - | 12 | SILICON | APTGT300 | 600 V | 600 V | 430 A | 1 | MICROSEMI CORP | - | APTGT300H60G | 20 V | + 100 C | Microchip Technology | - 40 C | 1 | Chassis Mount | 4 | 175 °C | - | Bulk | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X12 | RECTANGULAR | FLANGE MOUNT | Active | - | 1.15 kW | Active | NOT SPECIFIED | 5.19 | Details | Yes | 8541290080, 8541500080/8541500080/8541500080/8541500080/8541500080 | - | - | - | 320 ns | 170 ns | 3.880136 oz | -40°C ~ 175°C (TJ) | Tube | - | e1 | Yes | EAR99 | TIN SILVER COPPER | 175 °C | -40 °C | AVALANCHE RATED | 1.15 kW | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | 12 | R-XUFM-X12 | Not Qualified | Full Bridge | - | 1.15 | ISOLATED | - | - | 1150 W | POWER CONTROL | N-CHANNEL | Standard | 600 V | 430 A | - | 350 µA | - | 600 V | 24 nF | - | 1.8V @ 15V, 300A | 430 A | - | 430 | Trench Field Stop | 600 V | - | - | - | - | No | - | 24 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | No | ||
APT150GN60JDQ4 Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SOT-227-4 | - | - | ISOTOP® | - | - | - | APT150 | 600 V | - | 220 A | 1 | - | - | - | 30 V | + 175 C | Microchip Technology | - 55 C | - | Chassis Mount | - | - | - | Tube | - | - | - | - | - | - | 536 W | Active | - | - | Details | - | - | - | ISOTOP | - | - | - | 1.058219 oz | -55°C ~ 175°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 536 | - | - | - | 536 W | - | - | Standard | - | - | - 55 C to + 175 C | 50 µA | - | 600 V | - | - | 1.85V @ 15V, 150A | - | - | 220 | Trench Field Stop | - | - | - | - | - | No | - | 9.2 nF @ 25 V | - | - | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | - | ||
APTGL60DDA120T3G Microchip Technology | In Stock | - | - | Production (Last Updated: 1 month ago) | Chassis Mount, Screw | Chassis Mount | SP3-32 | - | 16 | SP3 | - | - | - | APTGL60 | 1.2 kV | 1.2 kV | 80 A | 1 | - | - | - | 20 V | + 100 C | Microchip Technology | - 40 C | - | Chassis Mount | - | - | - | Bulk | - | - | - | - | - | - | 280 W | Active | - | - | Details | - | - | - | - | - | - | - | 5.783519 oz | -40°C ~ 175°C (TJ) | Tube | - | - | - | - | - | 175 °C | -40 °C | - | 280 W | - | - | - | - | - | - | - | Dual | Dual | - | - | - | - | 280 W | - | - | Standard | 1.2 kV | 80 A | - | 250 µA | - | 1200 V | 2.77 nF | - | 2.25V @ 15V, 50A | - | - | 80 | Trench Field Stop | - | - | - | - | - | Yes | - | 2.77 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | - | ||
APT80GP60B2G Microchip Technology | In Stock | - | - | - | - | Through Hole | T-Max-3 | - | - | T-MAX™ [B2] | - | - | - | APT80GP60 | 600 V | - | 100 A | 1 | - | - | - | 20 V | + 150 C | Microchip Technology | - 55 C | - | Through Hole | - | - | - | Tube | - | - | - | - | - | - | 1041 W | Active | - | - | Details | - | - | - | - | - | - | - | - | - | Tube | POWER MOS 7® | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | Standard | - | 1041 W | - | - | - | - | - | - | - | - | 600 V | - | - | 2.7V @ 15V, 80A | - | - | - | PT | - | - | - | - | - | - | - | - | - | - | IGBT Silicon Modules | - | - | - | - | ||
APTGT50DDA120T3G Microchip Technology | In Stock | - | - | Production (Last Updated: 2 months ago) | Chassis Mount, Screw | Chassis Mount | SP3F-32 | NO | 32 | SP3 | - | 25 | SILICON | APTGT50 | 1200 V | 1.2 kV | 75 A | 1 | MICROSEMI CORP | - | APTGT50DDA120T3G | 20 V | + 125 C | Microchip Technology | - 40 C | 1 | Chassis Mount | 2 | 150 °C | - | Bulk | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X25 | RECTANGULAR | FLANGE MOUNT | Active | - | 270 W | Active | NOT SPECIFIED | 5.17 | Details | Yes | 8541290080 | - | - | 420 ns | 610 ns | 140 ns | 3.880136 oz | -40°C ~ 175°C (TJ) | Tube | - | e1 | Yes | EAR99 | TIN SILVER COPPER | 150 °C | -40 °C | AVALANCHE RATED | 270 W | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | 25 | R-XUFM-X25 | Not Qualified | Dual | Dual | 270 W | ISOLATED | - | 90 ns | 270 W | POWER CONTROL | N-CHANNEL | Standard | 1.2 kV | 75 A | - | 250 µA | - | 1200 V | 3.6 nF | - | 2.1V @ 15V, 50A | 75 A | 175 °C | 75 | Trench Field Stop | 1200 V | - | - | - | - | Yes | - | 3.6 nF @ 25 V | - | - | IGBT Silicon Modules | 12.1 mm | - | - | No | ||
APT40GL120JU3 Microchip Technology | In Stock | - | - | Production (Last Updated: 2 months ago) | Chassis, Screw, Stud | Chassis, Stud Mount | ISOTOP-4 | - | 4 | SOT-227 | - | - | - | APT40GL120 | 1200 V | 1.2 kV | 65 A | 1 | - | - | - | 20 V | + 175 C | Microchip Technology | - 55 C | - | SMD/SMT | - | - | - | Bulk | - | - | - | - | - | - | 220 W | Active | - | - | Details | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Tube | - | - | - | - | - | - | - | - | 220 W | - | - | - | - | - | - | - | Single | Single | 220 | - | - | - | 220 W | - | - | Standard | 2.25 V | 65 A | - | 250 µA | - | 1200 V | 1.95 nF | - | 2.25V @ 15V, 35A | - | - | 65 | Trench Field Stop | - | - | - | - | - | No | - | 1.95 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | - | ||
APT150GN60J Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SOT-227-4 | - | - | ISOTOP® | - | - | - | APT150 | 600 V | - | 220 A | 1 | - | - | - | 30 V | + 175 C | Microchip Technology | - 55 C | - | Chassis Mount | - | - | - | Tube | - | - | - | - | - | - | 536 W | Active | - | - | Details | - | - | - | ISOTOP | - | - | - | 1.058219 oz | -55°C ~ 175°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | 536 W | - | - | Standard | - | - | - 55 C to + 175 C | 25 µA | - | 600 V | - | - | 1.85V @ 15V, 150A | - | - | - | Trench Field Stop | - | - | - | - | - | No | - | 9.2 nF @ 25 V | - | - | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | - | ||
APTGT50SK170TG Microchip Technology | In Stock | - | - | Production (Last Updated: 2 months ago) | Chassis Mount, Screw | Chassis Mount | SP4 | - | 20 | SP4 | - | - | - | APTGT50 | 1.7 kV | 1.7 kV | 75 A | 1 | - | - | - | 20 V | + 100 C | Microchip Technology | - 40 C | - | Chassis Mount | - | - | - | Bulk | - | - | - | - | - | - | 312 W | Active | - | - | Details | - | - | - | - | - | - | - | 3.880136 oz | -40°C ~ 150°C (TJ) | Tube | - | - | - | - | - | 150 °C | -40 °C | - | 312 W | - | - | - | - | - | - | - | Single | Single | - | - | - | - | 312 W | - | - | Standard | 1.7 kV | 75 A | - | 250 µA | - | 1700 V | 4.4 nF | - | 2.4V @ 15V, 50A | - | - | 75 | Trench Field Stop | - | - | - | - | - | Yes | - | 4.4 nF @ 25 V | - | - | IGBT Silicon Modules | - | - | - | No | ||
APT75GP120JDQ3 Microchip Technology | In Stock | - | - | - | - | Chassis Mount | SOT-227-4 | - | - | ISOTOP® | - | - | - | APT75GP120 | 1200 V | - | 128 A | 1 | - | - | - | 20 V | + 150 C | Microchip Technology | - 55 C | - | Chassis Mount | - | - | - | Tube | - | - | - | - | - | - | 543 W | Active | - | - | Details | - | - | - | POWER MOS 7 IGBT, ISOTOP | - | - | - | 1.058219 oz | -55°C ~ 150°C (TJ) | Tube | POWER MOS 7® | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 543 | - | - | - | 543 W | - | - | Standard | - | - | - 55 C to + 150 C | 1.25 mA | - | 1200 V | - | - | 3.9V @ 15V, 75A | - | - | 128 | PT | - | - | - | - | - | No | - | 7.04 nF @ 25 V | - | - | IGBT Silicon Modules | 9.6 mm | 38.2 mm | 25.4 mm | - |