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  • Voltage - Supply
  • Length

Attribute column

Manufacturer

Micron Technology Memory

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10000 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Factory Lead Time

Lifecycle Status

Contact Plating

Mount

Mounting Type

Package / Case

Surface Mount

Number of Pins

Supplier Device Package

Number of Terminals

Access Time-Max

Clock Frequency-Max (fCLK)

Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Memory Types

Moisture Sensitivity Levels

Number of Words

Number of Words Code

Operating Temperature-Max

Operating Temperature-Min

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Part Life Cycle Code

Part Package Code

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supply Voltage-Nom (Vsup)

Usage Level

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Type

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Technology

Voltage - Supply

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Voltage

Interface

Max Supply Voltage

Min Supply Voltage

Memory Size

Number of Ports

Nominal Supply Current

Operating Mode

Clock Frequency

Supply Current-Max

Access Time

Memory Format

Memory Interface

Data Bus Width

Organization

Output Characteristics

Seated Height-Max

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Memory Density

Max Frequency

Screening Level

Access Time (Max)

Parallel/Serial

I/O Type

Sync/Async

Word Size

Memory IC Type

Programming Voltage

Serial Bus Type

Endurance

Write Cycle Time-Max (tWC)

Data Retention Time-Min

Write Protection

Alternate Memory Width

Data Polling

Toggle Bit

Command User Interface

Number of Sectors/Size

Sector Size

Page Size

Ready/Busy

Boot Block

Refresh Cycles

Common Flash Interface

Sequential Burst Length

Interleaved Burst Length

Access Mode

Self Refresh

Height

Height Seated (Max)

Length

Width

Radiation Hardening

REACH SVHC

RoHS Status

Lead Free

N25Q032A13EF640E
N25Q032A13EF640E

Micron Technology Inc.

329

-

Datasheet

15 Weeks

-

-

Surface Mount

Surface Mount

8-VDFN Exposed Pad

-

8

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2012

-

yes

Obsolete

3 (168 Hours)

8

-

-

-

-

-

-

-

-

-

-

-

2.7V~3.6V

DUAL

-

260

1

3V

1.27mm

-

-

30

N25Q032

-

-

-

-

-

3/3.3V

-

-

2.7V

SPI, Serial

-

-

32Mb 8M x 4

-

20mA

-

108MHz

-

7 ns

FLASH

SPI

-

32MX1

-

-

-

8ms, 5ms

22b

32 Mb

0.0001A

-

-

-

-

-

-

Synchronous

8b

-

-

SPI

100000 Write/Erase Cycles

-

20

HARDWARE/SOFTWARE

-

-

-

-

-

-

256B

-

-

-

-

-

-

-

-

850μm

-

6mm

5mm

No

No SVHC

ROHS3 Compliant

-

1971

-

-

-

-

-

-

-

-

YES

8

-

8

-

50 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

M25P32-VMW6TG

FLASH, NOR

-

4194304 words

4000000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8

SOP8,.31

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

30

5.34

Compliant

Yes

3 V

-

-

Tape & Reel (TR)

-

-

Yes

-

-

-

-

3A991.B.1.A

NOR TYPE

-

85 °C

-40 °C

-

8542.32.00.51

Flash Memories

-

CMOS

-

DUAL

GULL WING

260

1

-

1.27 mm

compliant

75 MHz

-

-

8

R-PDSO-G8

Not Qualified

3.3 V

3.6 V

3/3.3 V

INDUSTRIAL

2.7 V

2.7 V

SPI, Serial

3.6 V

2.7 V

3.8 MB

-

12 mA

SYNCHRONOUS

-

0.015 mA

8 ns

-

-

-

4MX8

TOTEM POLE

2.5 mm

8

-

22 b

32 Mb

0.00005 A

33554432 bit

-

-

-

SERIAL

-

Synchronous

8 b

FLASH

2.7 V

SPI

100000 Write/Erase Cycles

-

20

HARDWARE/SOFTWARE

-

-

-

-

-

-

256 B

-

-

-

-

-

-

-

-

-

-

5.62 mm

-

No

-

-

-

MT40A1G4RH-083E:B
MT40A1G4RH-083E:B

Micron Technology Inc.

66
-

-

-

-

-

Surface Mount

78-TFBGA

YES

-

-

-

-

-

-

-

-

Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

0°C~95°C TC

Tray

2016

e1

-

Obsolete

3 (168 Hours)

78

-

EAR99

-

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

AUTO/SELF REFRESH

-

-

-

-

1.14V~1.26V

BOTTOM

-

260

1

1.2V

0.8mm

-

-

30

-

-

R-PBGA-B78

-

1.2V

1.26V

-

-

1.14V

-

-

-

-

4Gb 1G x 4

1

-

SYNCHRONOUS

1.2GHz

-

833 ps

DRAM

Parallel

-

1GX4

-

-

4

-

-

-

-

4294967296 bit

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.2mm

10.5mm

9mm

-

-

ROHS3 Compliant

Lead Free

In Stock

-

-

-

-

-

-

-

-

YES

-

-

48

55 ns

-

MICRON TECHNOLOGY INC

Micron Technology Inc

M29F200FB55N3F2

-

-

131072 words

128000

125 °C

-40 °C

PLASTIC/EPOXY

TSOP1

TSOP1, TSSOP48,.8,20

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP1

NOT SPECIFIED

5.75

-

Yes

5 V

Automotive grade

-

-

-

e3

Yes

-

-

-

-

EAR99

NOR TYPE

Matte Tin (Sn)

-

-

BOTTOM BOOT BLOCK

8542.32.00.51

Flash Memories

-

CMOS

-

DUAL

GULL WING

NOT SPECIFIED

1

-

0.5 mm

compliant

-

-

-

48

R-PDSO-G48

Not Qualified

-

5.5 V

5 V

AUTOMOTIVE

4.5 V

-

-

-

-

-

-

-

ASYNCHRONOUS

-

0.03 mA

-

-

-

-

128KX16

-

1.2 mm

16

-

-

-

0.00012 A

2097152 bit

-

AEC-Q100

-

PARALLEL

-

-

-

FLASH

5 V

-

-

-

-

-

8

YES

YES

YES

1,2,1,3

16K,8K,32K,64K

-

YES

BOTTOM

-

YES

-

-

-

-

-

-

18.4 mm

12 mm

-

-

-

-

NAND512W3A2SZAXE
NAND512W3A2SZAXE

Micron Technology Inc.

1260

-

Datasheet

4 Weeks

-

-

-

Surface Mount

63-TFBGA

YES

63

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2012

-

-

Obsolete

3 (168 Hours)

63

-

-

-

-

-

-

-

-

-

3.3V

-

2.7V~3.6V

BOTTOM

-

-

1

3V

0.8mm

-

-

-

NAND512

-

-

-

3V

-

-

-

-

3.3V

-

-

-

512Mb 64M x 8

-

-

-

-

-

-

FLASH

Parallel

-

64MX8

-

-

8

50ns

26b

512 Mb

0.00005A

-

-

-

35 ns

-

-

-

-

-

-

-

-

-

-

-

-

NO

NO

YES

4K

16K

528B

YES

-

-

-

-

-

-

-

-

1.05mm

11mm

-

No

-

ROHS3 Compliant

-

M29W256GL70ZS6E
M29W256GL70ZS6E

Micron Technology Inc.

31

-

Datasheet

-

-

Copper, Silver, Tin

-

Surface Mount

64-LBGA

YES

64

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2013

e1

yes

Obsolete

3 (168 Hours)

64

-

3A991.B.1.A

-

TIN SILVER COPPER

-

-

-

8542.32.00.51

-

-

-

2.7V~3.6V

BOTTOM

-

260

1

3V

1mm

-

-

30

M29W256

64

-

-

-

-

3/3.3V

-

-

2.7V

-

-

-

256Mb 32M x 8 16M x 16

-

10mA

-

-

-

-

FLASH

Parallel

-

16MX16

-

-

16

70ns

-

256 Mb

0.0001A

-

-

-

70 ns

-

-

Asynchronous

-

-

-

-

-

0.00007ms

-

-

8

YES

YES

YES

256

128K

8/16words

YES

BOTTOM/TOP

-

YES

-

-

-

-

-

1.4mm

13mm

11mm

No

-

ROHS3 Compliant

-

8500

-

-

-

-

-

Surface Mount

-

-

YES

54

-

54

5.4 ns

133 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

MT48LC8M16A2TG-75IT:G

-

3

8388608 words

8000000

85 °C

-40 °C

PLASTIC/EPOXY

TSOP2

0.400 INCH, PLASTIC, TSOP2-54

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP2

30

8.28

Compliant

No

3.3 V

-

-

-

-

e0

-

-

-

-

-

EAR99

-

Tin/Lead (Sn/Pb)

85 °C

-40 °C

AUTO/SELF REFRESH

8542.32.00.02

DRAMs

-

CMOS

-

DUAL

GULL WING

235

1

-

0.8 mm

unknown

-

-

-

54

R-PDSO-G54

Not Qualified

3.3 V

3.6 V

3.3 V

INDUSTRIAL

3 V

-

-

3.6 V

3 V

-

1

150 mA

SYNCHRONOUS

-

0.31 mA

-

-

-

16 b

8MX16

3-STATE

1.2 mm

16

-

14 b

128 Mb

0.002 A

134217728 bit

133 MHz

-

-

-

COMMON

-

-

SYNCHRONOUS DRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4096

-

1,2,4,8,FP

1,2,4,8

FOUR BANK PAGE BURST

YES

-

-

22.22 mm

10.16 mm

No

-

-

-

N25Q128A13ESE40E
N25Q128A13ESE40E

Micron Technology Inc.

9000

-

Datasheet

-

-

-

-

Surface Mount

8-SOIC (0.209, 5.30mm Width)

YES

8

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2012

-

yes

Obsolete

3 (168 Hours)

8

-

3A991.B.1.A

-

-

-

-

-

-

-

-

-

2.7V~3.6V

DUAL

-

260

1

3V

1.27mm

-

-

30

N25Q128

8

-

-

-

-

3/3.3V

-

-

2.7V

SPI, Serial

-

-

128Mb 32M x 4

-

20mA

-

108MHz

-

7 ns

FLASH

SPI

-

-

TOTEM POLE

-

8

8ms, 5ms

1b

128 Mb

0.0001A

-

-

-

-

-

-

Synchronous

-

-

-

SPI

100000 Write/Erase Cycles

-

20

HARDWARE/SOFTWARE

-

-

-

-

-

-

256B

-

-

-

-

-

-

-

-

-

2.16mm

-

-

No

-

ROHS3 Compliant

-

M29F800FB5AN6E2
M29F800FB5AN6E2

Micron Technology Inc.

1152

-

Datasheet

5 Weeks

-

Tin

-

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

YES

48

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Automotive grade

-40°C~85°C TA

Tray

2009

e3

yes

Obsolete

3 (168 Hours)

48

-

EAR99

-

-

-

-

BOTTOM BOOT BLOCK

8542.32.00.51

-

-

-

4.5V~5.5V

DUAL

-

260

1

5V

0.5mm

-

-

30

M29F800

48

-

-

5V

-

5V

-

-

4.5V

-

-

-

8Mb 1M x 8 512K x 16

-

20mA

-

-

-

-

FLASH

Parallel

-

512KX16

-

-

16

55ns

-

8 Mb

0.00012A

-

-

AEC-Q100

55 ns

-

-

Asynchronous

-

-

-

-

-

-

-

-

8

YES

YES

YES

12115

16K8K32K64K

-

YES

BOTTOM

-

YES

-

-

-

-

-

1.2mm

18.4mm

12mm

No

-

ROHS3 Compliant

-

In Stock

-

-

-

-

-

-

-

-

YES

-

-

24

-

108 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

N25Q256A13E1240F

-

-

268435456 words

256000000

85 °C

-40 °C

PLASTIC/EPOXY

TBGA

TBGA, BGA24,5X5,40

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

Obsolete

-

NOT SPECIFIED

5.74

-

Yes

3 V

-

-

-

-

e1

Yes

-

-

-

-

-

NOR TYPE

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

-

-

-

-

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

-

1 mm

compliant

-

-

-

-

R-PBGA-B24

Not Qualified

-

3.6 V

-

INDUSTRIAL

2.7 V

-

-

-

-

-

-

-

SYNCHRONOUS

-

0.02 mA

-

-

-

-

256MX1

-

1.2 mm

1

-

-

-

0.00025 A

268435456 bit

-

-

-

SERIAL

-

-

-

FLASH

3 V

SPI

-

-

20

HARDWARE/SOFTWARE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8 mm

6 mm

-

-

-

-

JS28F128M29EWHA
JS28F128M29EWHA

Micron Technology Inc.

19

-

Datasheet

16 Weeks

-

-

-

Surface Mount

56-TFSOP (0.724, 18.40mm Width)

-

56

56-TSOP

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2012

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

85°C

-40°C

-

-

-

-

-

2.7V~3.6V

-

-

-

-

-

-

-

-

-

JS28F128

-

-

-

-

-

-

-

-

-

Parallel

-

-

128Mb 16M x 8 8M x 16

-

-

-

-

-

70ns

FLASH

Parallel

-

-

-

-

-

70ns

-

128 Mb

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

No

-

ROHS3 Compliant

-

MT28EW128ABA1HPC-1SIT
MT28EW128ABA1HPC-1SIT

Micron Technology Inc.

In Stock

-

Datasheet

-

-

-

-

Surface Mount

64-LBGA

YES

-

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

-

e1

-

Obsolete

3 (168 Hours)

64

-

3A991.B.1.A

-

TIN SILVER COPPER

-

-

-

8542.32.00.51

-

-

-

2.7V~3.6V

BOTTOM

-

260

1

3V

1mm

-

-

30

-

-

R-PBGA-B64

-

-

3.6V

-

-

2.7V

-

-

-

-

128Mb 16M x 8 8M x 16

-

-

ASYNCHRONOUS

-

-

95ns

FLASH

Parallel

-

8MX16

-

-

16

60ns

-

-

-

134217728 bit

-

-

-

-

-

-

-

-

3V

-

-

-

-

-

8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.4mm

13mm

11mm

-

-

ROHS3 Compliant

-

In Stock

-

-

-

-

-

-

-

-

YES

-

-

216

-

-

MICRON TECHNOLOGY INC

Micron Technology Inc

MT42L64M64D2KH-18IT:A

-

-

67108864 words

64000000

-

-

PLASTIC/EPOXY

VFBGA

VFBGA,

-

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Active

-

NOT SPECIFIED

5.57

-

Yes

1.8 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

-

-

-

CMOS

-

BOTTOM

BALL

NOT SPECIFIED

1

-

0.4 mm

compliant

-

-

-

-

S-PBGA-B216

-

-

1.95 V

-

-

1.7 V

-

-

-

-

-

1

-

SYNCHRONOUS

-

-

-

-

-

-

64MX64

-

0.8 mm

64

-

-

-

-

4294967296 bit

-

-

-

-

-

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MULTI BANK PAGE BURST

YES

-

-

12 mm

12 mm

-

-

-

-

In Stock

-

-

-

-

-

-

-

-

YES

-

-

90

7 ns

-

MICRON TECHNOLOGY INC

Micron Technology Inc

MT46H8M32LFB5-10IT:A

-

-

8388608 words

8000000

85 °C

-40 °C

PLASTIC/EPOXY

VFBGA

VFBGA,

-

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Obsolete

BGA

30

5.69

-

Yes

1.8 V

-

-

-

-

e1

-

-

-

-

-

EAR99

-

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

AUTO/SELF REFRESH

8542.32.00.24

-

-

CMOS

-

BOTTOM

BALL

260

1

-

0.8 mm

unknown

-

-

-

90

R-PBGA-B90

Not Qualified

-

1.95 V

-

INDUSTRIAL

1.7 V

-

-

-

-

-

1

-

SYNCHRONOUS

-

-

-

-

-

-

8MX32

-

1 mm

32

-

-

-

-

268435456 bit

-

-

-

-

-

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FOUR BANK PAGE BURST

YES

-

-

13 mm

8 mm

-

-

-

-

In Stock

-

-

-

-

-

-

-

-

YES

-

-

136

-

-

MICRON TECHNOLOGY INC

Micron Technology Inc

MT41K256M32SLD-125M:E

-

-

268435456 words

256000000

85 °C

-

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Active

-

-

5.72

-

-

1.35 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

AUTO/SELF REFRESH

-

-

-

CMOS

-

BOTTOM

BALL

-

1

-

0.8 mm

compliant

-

-

-

-

R-PBGA-B136

-

-

1.45 V

-

OTHER

1.283 V

-

-

-

-

-

1

-

SYNCHRONOUS

-

-

-

-

-

-

256MX32

-

1.2 mm

32

-

-

-

-

8

-

-

-

-

-

-

-

DDR DRAM MODULE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SINGLE BANK PAGE BURST

YES

-

-

14 mm

10 mm

-

-

-

-

M29W800DT70ZE6E
M29W800DT70ZE6E

Micron Technology Inc.

2900

-

Datasheet

4 Weeks

-

-

-

Surface Mount

48-TFBGA

-

48

48-TFBGA (6x8)

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2004

-

-

Obsolete

3 (168 Hours)

-

SMD/SMT

-

-

-

85°C

-40°C

-

-

-

-

-

2.7V~3.6V

-

-

-

-

-

-

-

-

-

M29W800

-

-

-

-

-

-

-

-

2.7V

Parallel

3.6V

2.7V

8Mb 1M x 8 512K x 16

-

10mA

-

-

-

70ns

FLASH

Parallel

-

-

-

-

-

70ns

-

8 Mb

-

-

-

-

-

-

-

Asynchronous

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

No

No SVHC

ROHS3 Compliant

-

120000

-

-

-

EOL (Last Updated: 2 years ago)

-

-

-

-

YES

56

-

56

70 ns

-

STMICROELECTRONICS

STMicroelectronics

M29W128GH70N6F

FLASH, NOR

-

8388608 words

8000000

85 °C

-40 °C

PLASTIC/EPOXY

TSSOP

14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Transferred

TSOP

40

5.34

Compliant

Yes

3 V

-

-

Tape & Reel

-

e3/e6

-

-

-

-

-

3A991.B.1.A

NOR TYPE

MATTE TIN/TIN BISMUTH

85 °C

-40 °C

-

8542.32.00.51

Flash Memories

-

CMOS

-

DUAL

GULL WING

260

1

-

0.5 mm

compliant

-

-

-

56

R-PDSO-G56

Not Qualified

-

3.6 V

3/3.3 V

INDUSTRIAL

2.7 V

3 V

Parallel

3.6 V

2.7 V

-

-

10 mA

ASYNCHRONOUS

-

0.02 mA

70 ns

-

-

-

8MX16

-

1.2 mm

16

-

-

128 Mb

0.0001 A

134217728 bit

-

-

-

PARALLEL

-

Asynchronous

-

FLASH

3 V

-

-

-

-

-

8

YES

YES

YES

128

128K

8/16 words

YES

-

-

YES

-

-

-

-

-

-

18.4 mm

14 mm

No

-

-

-

M29W800DB45N6E
M29W800DB45N6E

Micron Technology Inc.

In Stock

-

Datasheet

20 Weeks

-

-

-

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

YES

48

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2008

e3

yes

Obsolete

3 (168 Hours)

48

SMD/SMT

EAR99

-

MATTE TIN

-

-

BOTTOM BOOT BLOCK

8542.32.00.51

-

-

-

2.7V~3.6V

DUAL

-

260

1

3.3V

0.5mm

-

-

30

M29W800

48

-

-

-

-

3.3V

-

-

2.7V

-

-

-

8Mb 1M x 8 512K x 16

-

10mA

-

-

-

-

FLASH

Parallel

-

512KX16

-

-

16

45ns

-

8 Mb

0.0001A

-

-

-

45 ns

-

-

Asynchronous

-

-

-

-

-

-

-

-

8

YES

YES

YES

12115

16K8K32K64K

-

YES

BOTTOM

-

YES

-

-

-

-

-

1.2mm

18.4mm

12mm

No

No SVHC

ROHS3 Compliant

-

N25Q512A13G1240E
N25Q512A13G1240E

Micron Technology Inc.

2134

-

Datasheet

-

-

-

-

Surface Mount

24-TBGA

YES

24

-

-

-

-

-

-

-

Non-Volatile

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-40°C~85°C TA

Tray

2013

e1

yes

Obsolete

3 (168 Hours)

24

-

3A991.B.1.A

-

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

-

8542.32.00.51

-

-

-

2.7V~3.6V

BOTTOM

-

-

1

3V

1mm

-

-

-

N25Q512

-

-

-

3V

-

-

-

-

2.7V

SPI, Serial

-

-

512Mb 128M x 4

-

20mA

-

108MHz

-

-

FLASH

SPI

-

64MX8

-

-

8

8ms, 5ms

1b

512 Mb

0.0005A

-

-

-

-

-

-

Synchronous

-

-

-

SPI

100000 Write/Erase Cycles

-

20

HARDWARE/SOFTWARE

-

-

-

-

-

-

256B

-

-

-

-

-

-

-

-

-

1.2mm

8mm

-

No

-

ROHS3 Compliant

-

In Stock

-

-

-

-

-

-

-

-

YES

-

-

48

70 ns

-

MICRON TECHNOLOGY INC

Micron Technology Inc

MT45V512KW16PEGA-70WT

-

-

524288 words

512000

85 °C

-30 °C

PLASTIC/EPOXY

VFBGA

VFBGA, BGA48,6X8,30

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Obsolete

BGA

-

5.84

-

Yes

3 V

-

-

-

-

e1

-

-

-

-

-

3A991.B.2.A

-

TIN SILVER COPPER

-

-

-

8542.32.00.41

Other Memory ICs

-

CMOS

-

BOTTOM

BALL

-

1

-

0.75 mm

unknown

-

-

-

48

R-PBGA-B48

Not Qualified

-

3.6 V

3/3.3 V

OTHER

2.7 V

-

-

-

-

-

-

-

ASYNCHRONOUS

-

0.03 mA

-

-

-

-

512KX16

3-STATE

1 mm

16

-

-

-

0.00015 A

8388608 bit

-

-

-

PARALLEL

COMMON

-

-

PSEUDO STATIC RAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8 mm

6 mm

-

-

-

-