- Terminal Position
- Memory Size
- Memory Types
- Number of Functions
- Packaging
- Memory Format
- Memory Interface
- Mounting Type
- Operating Temperature
- Package / Case
- Voltage - Supply
- Length
Attribute column
Manufacturer
Micron Technology Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Refresh Cycles | Common Flash Interface | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status |
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 MT46V128M4TG-6T:F TR Micron Technology Inc. | 81 | - | Datasheet | - | - | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | - | - | 66-TSOP | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0°C~70°C TA | Tape & Reel (TR) | 2011 | - | - | - | Obsolete | 4 (72 Hours) | - | - | - | - | - | - | - | - | - | - | 2.3V~2.7V | - | - | - | - | - | - | - | - | - | MT46V128M4 | - | - | - | - | - | - | - | - | - | - | - | 512Mb 128M x 4 | - | - | - | 167MHz | - | 700ps | DRAM | Parallel | - | - | - | - | 15ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-RoHS Compliant | ||
 MT47H64M16HW-37E:E Micron | In Stock | - | - | - | - | - | - | YES | - | - | 84 | 0.5 ns | 267 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HW-37E:E | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 12.50 MM, FBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.66 | - | No | 1.8 V | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | Tin/Lead/Silver (Sn/Pb/Ag) | - | - | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | - | BOTTOM | BALL | 235 | 1 | - | 0.8 mm | unknown | - | - | - | 84 | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | - | 1 | - | SYNCHRONOUS | - | 0.33 mA | - | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.007 A | 1073741824 bit | - | - | COMMON | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | 8192 | - | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 12.5 mm | 8 mm | - | - | ||
MT41J256M16RE-107:D Micron | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT47H64M16HR-25E:E Micron | 881 | - | - | - | - | - | - | YES | - | - | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HR-25E:E | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.18 | - | Yes | 1.8 V | - | - | - | - | - | e1 | - | - | - | - | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | - | BOTTOM | BALL | 260 | 1 | - | 0.8 mm | unknown | - | - | - | 84 | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | - | 1 | - | SYNCHRONOUS | - | 0.44 mA | - | - | - | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.007 A | 1073741824 bit | - | - | COMMON | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | 8192 | - | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 12.5 mm | 8 mm | - | - | ||
MT47H256M4HQ25E:G Micron | In Stock | - | - | - | - | - | - | YES | - | - | 60 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H256M4HQ-25E:G | - | 268435456 words | 256000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.06 | - | Yes | 1.8 V | - | - | - | - | - | e1 | - | - | - | - | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | - | BOTTOM | BALL | 260 | 1 | - | 0.8 mm | unknown | - | - | - | 60 | R-PBGA-B60 | Not Qualified | - | 1.9 V | 1.8 V | OTHER | 1.7 V | - | - | - | - | 1 | - | SYNCHRONOUS | - | 0.335 mA | - | - | - | 256MX4 | 3-STATE | 1.2 mm | 4 | - | - | - | - | 1073741824 bit | - | - | COMMON | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | 8192 | - | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 11.5 mm | 8 mm | - | - | ||
MT48H8M16LFB4-75AT:K Micron | 5797 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT29TZZZAD8DKKBT-107 W.9F8 Micron Technology Inc. | 20 | - | - | - | - | Surface Mount | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Box | - | - | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
 EDB8132B4PM-1DAT-F-D Micron Technology Inc. | In Stock | - | - | - | - | Surface Mount | 168-VFBGA | YES | - | - | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~105°C TC | Tray | - | - | - | - | Active | 3 (168 Hours) | 168 | EAR99 | - | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | - | - | - | 1.14V~1.95V | BOTTOM | - | NOT SPECIFIED | 1 | 1.2V | 0.5mm | - | - | NOT SPECIFIED | - | - | S-PBGA-B168 | - | - | 1.3V | - | - | 1.14V | - | - | - | 8Gb 256M x 32 | 1 | - | SYNCHRONOUS | 533MHz | - | - | DRAM | Parallel | 256MX32 | - | - | 32 | - | - | - | - | 8589934592 bit | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DUAL BANK PAGE BURST | - | 0.82mm | 12mm | 12mm | - | ROHS3 Compliant | ||
EDB8164B4PR-1D-F-D Micron Technology Inc. | 310 | - | Datasheet | 12 Weeks | - | Surface Mount | 216-WFBGA | YES | - | - | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -30°C~85°C TC | Tray | - | - | - | - | Obsolete | 3 (168 Hours) | 216 | - | - | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | - | - | - | 1.14V~1.95V | BOTTOM | - | - | 1 | 1.2V | 0.4mm | - | - | - | - | - | S-PBGA-B216 | - | - | 1.3V | - | - | 1.14V | - | - | - | 8Gb 128M x 64 | 1 | - | SYNCHRONOUS | 533MHz | - | - | DRAM | Parallel | 128MX64 | - | - | 64 | - | - | - | - | 8589934592 bit | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE BANK PAGE BURST | - | 0.8mm | 12mm | 12mm | - | ROHS3 Compliant | ||
MT40A1G8SA-075:H Micron Technology Inc. | 137 | - | Datasheet | - | - | Surface Mount | 78-TFBGA | - | - | 78-FBGA (7.5x11) | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0°C~95°C TC | Tray | - | - | - | - | Obsolete | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | 1.14V~1.26V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8Gb 1G x 8 | - | - | - | 1.33GHz | - | - | DRAM | Parallel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
MT28GU512AAA2EGC-0SIT Micron Technology Inc. | In Stock | - | Datasheet | 4 Weeks | - | Surface Mount | 64-TBGA | YES | - | - | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive grade | -40°C~85°C TA | Tube | - | Automotive, AEC-Q100 | e1 | yes | Obsolete | 1 (Unlimited) | 64 | - | - | TIN SILVER COPPER | - | - | - | - | - | - | 1.7V~2V | BOTTOM | - | 260 | 1 | 1.8V | 1mm | - | - | 30 | - | - | R-PBGA-B64 | - | - | 2V | - | - | 1.7V | - | - | - | 512Mb 64M x 8 | - | - | SYNCHRONOUS | 133MHz | - | 96ns | FLASH | Parallel | 32MX16 | - | - | 16 | - | - | - | - | 536870912 bit | - | - | - | - | - | - | 1.8V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2mm | 10mm | 8mm | - | ROHS3 Compliant | ||
MT53D1024M32D4DT-053 AIT:D TR Micron Technology Inc. | In Stock | - | - | 6 Weeks | - | Surface Mount | 200-VFBGA | - | - | - | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~95°C TC | Tape & Reel (TR) | - | - | - | - | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | 1.1V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Gb 1G x 32 | - | - | - | 1866MHz | - | - | DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
 M50FLW040AK5G Micron Technology Inc. | In Stock | - | - | - | Surface Mount | Surface Mount | 32-LCC (J-Lead) | - | 32 | 32-PLCC (11.35x13.89) | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -20°C~85°C TA | Tube | 2006 | - | - | - | Obsolete | 3 (168 Hours) | - | - | - | - | 85°C | -20°C | - | - | - | - | 3V~3.6V | - | - | - | - | - | - | - | 33MHz | - | M50FLW040 | - | - | - | - | - | - | - | - | Parallel, Serial | 3.6V | 3V | 4Mb 512K x 8 | - | 60mA | - | 33MHz | - | 250ns | FLASH | Parallel | - | - | - | - | - | - | 4 Mb | - | - | - | - | - | Asynchronous | 8b | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
 MT53D512M32D2DS-046 AIT:D Micron Technology Inc. | 180 | - | - | - | - | Surface Mount | 200-WFBGA | - | - | - | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~85°C TA | Tray | - | - | - | - | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | 1.1V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 16Gb 512M x 32 | - | - | - | 2133MHz | - | - | DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
JS28F00BM29EWHA Micron | In Stock | - | - | - | Surface Mount | - | - | - | 56 | - | - | - | - | - | - | - | NOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 85 °C | -40 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Parallel | 3.6 V | 2.7 V | - | - | 31 mA | - | - | - | 110 ns | - | - | - | - | - | - | - | - | 2 Gb | - | - | - | - | - | Asynchronous | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | - | ||
MT29F128G08AUABAC5:B Micron Technology Inc. | In Stock | - | Datasheet | - | Surface Mount | Surface Mount | 52-VLGA | - | 52 | - | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0°C~70°C TA | Bulk | 2004 | - | - | yes | Obsolete | 3 (168 Hours) | 52 | 3A991.B.1.A | - | - | - | - | - | 8542.32.00.51 | - | - | 2.7V~3.6V | BOTTOM | - | 260 | 1 | 3.3V | - | unknown | - | 30 | MT29F128G08 | 52 | - | - | 3.3V | 3.6V | - | - | 2.7V | - | - | - | 128Gb 16G x 8 | - | 50mA | - | - | - | - | FLASH | Parallel | 16GX8 | - | - | 8 | - | 1b | 128 Gb | - | - | - | - | - | Asynchronous | 8b | - | 2.7V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1mm | 18mm | - | - | ROHS3 Compliant | ||
 RC28F00AM29EWLA Micron Technology Inc. | In Stock | - | Datasheet | - | Surface Mount | Surface Mount | 64-LBGA | - | 64 | - | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~85°C TA | Tray | 2011 | - | e0 | no | Obsolete | 3 (168 Hours) | 64 | - | - | TIN LEAD SILVER | - | - | - | - | - | - | 2.7V~3.6V | BOTTOM | - | 235 | 1 | 3V | 1mm | - | - | 30 | 28F00AM29EW | - | - | - | - | 3.6V | 3/3.3V | - | 2.7V | - | - | - | 1Gb 128M x 8 64M x 16 | - | 31mA | - | - | - | - | FLASH | Parallel | - | - | - | 16 | 100ns | - | 1 Gb | 0.00024A | - | 100 ns | - | - | Asynchronous | - | - | 2.7V | 8 | YES | YES | YES | 1K | 128K | 16/32words | YES | - | YES | - | - | - | - | 1.4mm | 13mm | 11mm | No | Non-RoHS Compliant | ||
 MT29F16G08ABCCBH1-10:C Micron Technology Inc. | 1000 | - | - | - | Surface Mount | Surface Mount | 100-VBGA | - | 100 | - | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0°C~70°C TA | Tube | 2012 | - | - | - | Obsolete | 3 (168 Hours) | 100 | - | - | - | - | - | - | - | - | - | 2.7V~3.6V | BOTTOM | - | - | - | - | 1mm | unknown | - | - | - | - | - | Not Qualified | 3.3V | - | - | - | - | Parallel, Serial | - | - | 16Gb 2G x 8 | - | 50mA | - | 100MHz | - | - | FLASH | Parallel | 2GX8 | - | - | 8 | - | 1b | 16 Gb | 0.00005A | - | 20 ns | - | - | Asynchronous | 8b | - | - | - | NO | NO | - | 4K | 512K | 4Kwords | YES | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
MT29F8G08ADADAH4:D Micron | 467 | - | - | - | - | - | - | YES | - | - | 63 | 25 ns | - | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F8G08ADADAH4:D | - | 1073741824 words | 1000000000 | 70 °C | - | PLASTIC/EPOXY | FBGA | FBGA, BGA63,10X12,32 | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | - | 5.75 | - | Yes | 3.3 V | - | - | - | - | - | - | - | - | - | - | - | SLC NAND TYPE | - | - | - | - | - | Flash Memories | CMOS | - | BOTTOM | BALL | - | - | - | 0.8 mm | unknown | - | - | - | - | R-PBGA-B63 | Not Qualified | - | - | 3.3 V | COMMERCIAL | - | - | - | - | - | - | - | - | - | 0.035 mA | - | - | - | 1GX8 | - | - | 8 | - | - | - | 0.0001 A | 8589934592 bit | - | PARALLEL | - | - | - | FLASH | - | - | NO | NO | YES | 8K | 128K | 2K words | YES | - | - | - | - | - | - | - | - | - | - | - | ||
 NAND01GW3B2BZA6E Micron Technology Inc. | 2077 | - | Datasheet | - | Surface Mount | Surface Mount | 63-TFBGA | - | 63 | - | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~85°C TA | Tray | 2004 | - | e1 | yes | Obsolete | 3 (168 Hours) | 63 | 3A991.B.1.A | - | TIN SILVER COPPER | - | - | - | 8542.32.00.51 | - | - | 2.7V~3.6V | BOTTOM | - | 260 | 1 | 3V | 0.8mm | - | - | 30 | NAND01G-A | 63 | - | Not Qualified | - | 3.6V | 3/3.3V | - | 2.7V | - | - | - | 1Gb 128M x 8 | - | 30mA | - | - | - | - | FLASH | Parallel | 128MX8 | - | - | 8 | 30ns | 28b | 1 Gb | 0.00005A | - | 20 ns | - | - | Asynchronous | 8b | - | 3V | - | NO | NO | YES | 1K | 128K | 2Kwords | YES | - | - | - | - | - | - | 1.05mm | 12mm | - | - | ROHS3 Compliant |