- Terminal Position
- Memory Size
- Memory Types
- Number of Functions
- Packaging
- Memory Format
- Memory Interface
- Mounting Type
- Operating Temperature
- Package / Case
- Voltage - Supply
- Length
Attribute column
Manufacturer
Micron Technology Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Operating Temperature | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Refresh Cycles | Common Flash Interface | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MT45W4MW16BFB-706 L WT TR Micron Technology Inc. | 28 |
| Datasheet | - | - | Surface Mount | 54-VFBGA | - | - | 54-VFBGA (6x9) | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -30°C~85°C TC | Tape & Reel (TR) | 2005 | - | - | Discontinued | 2 (1 Year) | - | - | - | - | - | - | - | - | - | - | 1.7V~1.95V | - | - | - | - | - | - | - | - | MT45W4MW16 | - | - | - | - | - | - | - | - | - | - | - | 64Mb 4M x 16 | - | - | - | - | - | 70ns | PSRAM | Parallel | - | - | - | - | - | 70ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-RoHS Compliant | - | ||
 MT53D384M32D2DS-046 WT ES:E Micron Technology Inc. | In Stock | - | - | - | - | Surface Mount | 200-WFBGA | - | - | - | - | - | - | - | - | - | Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -30°C~85°C TC | Tray | - | - | - | Obsolete | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | 1.1V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 12Gb 384M x 32 | - | - | - | 2133MHz | - | - | DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
 MT46V32M16BN-6LIT:F Micron | In Stock | - | - | - | - | - | - | YES | - | - | 60 | 0.7 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46V32M16BN-6LIT:F | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.47 | Compliant | Yes | 2.5 V | - | - | - | e1 | Yes | - | - | - | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | - | BOTTOM | BALL | 260 | 1 | - | 1 mm | compliant | - | - | 60 | R-PBGA-B60 | Not Qualified | 2.5 V | 2.7 V | 2.5 V | INDUSTRIAL | 2.3 V | - | - | - | - | 1 | - | SYNCHRONOUS | - | 0.405 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 0.005 A | 536870912 bit | - | - | - | COMMON | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8192 | - | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | - | 12.5 mm | 10 mm | - | - | Lead Free | ||
MT46V16M16TG-6T:KTR Micron | In Stock | - | - | - | - | - | - | - | 66 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | 70 °C | 0 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.5 V | - | - | - | - | - | - | - | - | - | - | - | - | - | 700 ps | - | - | 16 b | - | - | - | - | - | 15 b | 256 Mb | - | - | 333 MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | - | - | ||
M25P40-VMS6GB Micron | In Stock | - | - | - | - | - | - | YES | - | - | 8 | - | 50 MHz | NUMONYX | Numonyx Memory Solutions | M25P40-VMS6GB | - | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP, SOLCC8,.25 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Transferred | QFN | NOT SPECIFIED | 5.59 | - | Yes | 2.7 V | - | - | - | - | - | - | - | - | 3A991.B.1.B.1 | NOR TYPE | - | - | - | - | 8542.32.00.51 | Flash Memories | CMOS | - | DUAL | GULL WING | NOT SPECIFIED | 1 | - | 1.27 mm | unknown | - | - | 8 | R-PDSO-G8 | Not Qualified | - | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | - | - | - | - | - | - | SYNCHRONOUS | - | 0.015 mA | - | - | - | - | 512KX8 | - | 1 mm | 8 | - | - | - | 0.00001 A | 4194304 bit | - | - | SERIAL | - | - | - | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 mm | 5 mm | - | - | - | ||
MT41J256M16RE-125G:D Micron | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
M58WR032KT70ZB6E Micron | In Stock | - | - | - | - | - | - | YES | - | - | 56 | 70 ns | - | NUMONYX | Numonyx Memory Solutions | M58WR032KT70ZB6E | - | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA56,7X8,30 | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Transferred | BGA | NOT SPECIFIED | 5.21 | - | Yes | 1.8 V | - | - | - | - | - | - | - | - | 3A991.B.1.A | NOR TYPE | - | - | - | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | - | BOTTOM | BALL | NOT SPECIFIED | 1 | - | 0.75 mm | unknown | - | - | 56 | R-PBGA-B56 | Not Qualified | - | 2 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | - | - | - | ASYNCHRONOUS | - | 0.07 mA | - | - | - | - | 2MX16 | - | 1 mm | 16 | - | - | - | 0.00005 A | 33554432 bit | - | - | PARALLEL | - | - | - | FLASH | 1.8 V | - | - | - | - | - | - | NO | NO | YES | 8,63 | 4K,32K | 4 words | - | TOP | - | YES | - | - | - | - | - | 9 mm | 7.7 mm | - | - | - | ||
MT29F128G08AUCBBH3-12P:B Micron | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.3 V | - | - | - | - | - | - | - | 14.9 GB | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT47H64M16HR-3EIT:E Micron | In Stock | - | - | - | - | - | - | YES | - | - | 84 | 0.45 ns | 333 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HR-3EIT:E | - | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.45 | Compliant | Yes | 1.8 V | - | - | - | e1 | Yes | - | - | - | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | - | BOTTOM | BALL | 260 | 1 | - | 0.8 mm | compliant | - | - | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | - | 1 | - | SYNCHRONOUS | - | 0.35 mA | 450 ps | - | - | 16 b | 64MX16 | 3-STATE | 1.2 mm | 16 | - | 16 b | 1 Gb | 0.007 A | 1 | 667 MHz | - | - | COMMON | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8192 | - | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | 12.5 mm | 8 mm | No | - | Lead Free | ||
MT29F16G08CBACAWP-Z:C Micron | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Parallel | - | - | - | - | - | - | - | - | 20 | - | - | - | - | - | - | - | - | - | - | - | 16 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PF38F3060M0Y1EHB Micron | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT45W8MW16BGX-701LWT Micron | In Stock | - | - | - | - | - | - | YES | 54 | - | 54 | 70 ns | - | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W8MW16BGX-701LWT | - | - | 8388608 words | 8000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | 8 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, VFBGA-54 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.68 | Compliant | Yes | 1.8 V | - | - | - | e1 | Yes | - | - | - | 3A991.B.2.A | - | TIN SILVER COPPER | 85 °C | -30 °C | - | 8542.32.00.41 | Other Memory ICs | CMOS | - | BOTTOM | BALL | 260 | 1 | - | 0.75 mm | compliant | - | - | 54 | R-PBGA-B54 | Not Qualified | 1.8 V | 1.95 V | 1.8,1.8/3 V | OTHER | 1.7 V | - | - | - | - | 1 | - | ASYNCHRONOUS | - | 0.035 mA | - | - | - | - | 8MX16 | 3-STATE | 1 mm | 16 | - | 23 b | 128 Mb | 0.00016 A | 134217728 bit | - | - | PARALLEL | COMMON | - | - | PSEUDO STATIC RAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 10 mm | 8 mm | No | - | - | ||
M25P80-VMN6TG Micron | In Stock | - | - | - | - | - | - | YES | - | - | 8 | - | 50 MHz | STMICROELECTRONICS | STMicroelectronics | M25P80-VMN6TG | - | 1 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.150 INCH, ANTIMONY, TBBP-A FREE AND ROHS COMPLIANT, SOP-8 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | 40 | 5.49 | Compliant | Yes | 3 V | - | Tape and Reel | - | e4 | - | - | - | - | EAR99 | NOR TYPE | NICKEL PALLADIUM GOLD | - | - | - | 8542.32.00.51 | Flash Memories | CMOS | - | DUAL | GULL WING | 260 | 1 | - | 1.27 mm | compliant | - | - | 8 | R-PDSO-G8 | Not Qualified | - | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | - | - | - | 976.6 kB | - | - | SYNCHRONOUS | - | 0.015 mA | - | - | - | - | 1MX8 | - | 1.75 mm | 8 | - | - | - | 0.00001 A | 8388608 bit | - | - | SERIAL | - | - | - | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | - | - | - | ||
M58LT128HST8ZA6F Micron | In Stock | - | - | - | Surface Mount | - | - | YES | 80 | - | 64 | 85 ns | - | MICRON TECHNOLOGY INC | Micron Technology Inc | M58LT128HST8ZA6F | FLASH, NOR | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | 30 | 5.42 | Compliant | Yes | 1.8 V | - | Tape & Reel (TR) | - | e1 | Yes | - | - | - | 3A991.B.1.A | NOR TYPE | TIN SILVER COPPER | 85 °C | -40 °C | - | 8542.32.00.51 | Flash Memories | CMOS | - | BOTTOM | BALL | 260 | 1 | - | 1 mm | compliant | - | - | 64 | R-PBGA-B64 | Not Qualified | 1.8 V | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | Parallel/Serial | 2 V | 1.7 V | - | - | 28 mA | SYNCHRONOUS | - | 0.053 mA | 85 | - | - | - | 8MX16 | - | 1.2 mm | 16 | - | 23 b | 128 Mb | 0.000075 A | 128 | - | - | PARALLEL | - | Asynchronous | 16 b | FLASH | 1.8 V | - | - | - | - | - | - | NO | NO | YES | 4,127 | 16K,64K | 4 words | - | TOP | - | YES | - | - | - | - | - | 13 mm | 10 mm | No | - | - | ||
M45PE80-VMN6P Micron | 41 |
| - | - | - | - | - | YES | - | - | 8 | - | 50 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M45PE80-VMN6P | - | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.64 | - | Yes | 3 V | - | - | - | - | Yes | - | - | - | EAR99 | NOR TYPE | - | - | - | - | 8542.32.00.51 | Flash Memories | CMOS | - | DUAL | GULL WING | 260 | 1 | - | 1.27 mm | compliant | - | - | 8 | R-PDSO-G8 | Not Qualified | - | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | - | - | - | - | - | - | SYNCHRONOUS | - | 0.015 mA | - | - | - | - | 1MX8 | - | 1.75 mm | 8 | - | - | - | 0.00001 A | 8388608 bit | - | - | SERIAL | - | - | - | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | - | - | - | ||
 M28W640FST70ZA6E Micron Technology Inc. | In Stock | - | - | - | Surface Mount | Surface Mount | 64-TBGA | - | 64 | 64-TBGA (10x13) | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~85°C TA | Tray | 2006 | - | - | Obsolete | 3 (168 Hours) | - | - | - | - | 85°C | -40°C | - | - | - | - | 2.7V~3.6V | - | - | - | - | - | - | - | - | M28W640 | - | - | - | - | - | - | - | - | Parallel | 3.6V | 2.7V | 64Mb 4M x 16 | - | 18mA | - | - | - | 70ns | FLASH | Parallel | - | - | - | - | - | 70ns | 22b | 64 Mb | - | - | - | - | - | - | Asynchronous | 16b | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
MT42L128M32D1LH18WT:A Micron | 994 | - | - | - | - | - | - | YES | - | - | 216 | 5.5 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT42L128M32D1LH-18WT:A | - | - | 134217728 words | 128000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA216,29X29,16 | BGA216,29X29,16 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.58 | - | Yes | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | - | DRAMs | CMOS | - | BOTTOM | BALL | - | 1 | - | 0.4 mm | compliant | - | - | - | S-PBGA-B216 | Not Qualified | - | 1.95 V | 1.2,1.8 V | OTHER | 1.7 V | - | - | - | - | 1 | - | SYNCHRONOUS | - | 0.22 mA | - | - | - | - | 128MX32 | 3-STATE | 0.65 mm | 32 | - | - | - | 0.0001 A | 4294967296 bit | - | - | - | COMMON | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8192 | - | 4,8,16 | 4,8,16 | MULTI BANK PAGE BURST | YES | - | 12 mm | 12 mm | - | - | - | ||
M29W320DB70ZA6 Micron Technology Inc. | In Stock | - | Datasheet | - | Surface Mount | Surface Mount | 63-TFBGA | - | 63 | - | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~85°C TA | Tray | 1998 | - | - | Obsolete | 1 (Unlimited) | 48 | - | - | - | - | - | - | - | - | - | 2.7V~3.6V | BOTTOM | - | - | 1 | 3V | 0.8mm | - | - | M29W320 | - | R-PBGA-B48 | - | - | 3.6V | 3.3V | - | 2.7V | - | - | - | 32Mb 4M x 8 2M x 16 | - | 10mA | - | - | - | - | FLASH | Parallel | - | 2MX16 | - | - | 16 | 70ns | - | 32 Mb | 0.0001A | - | - | 70 ns | - | - | Asynchronous | - | - | 3V | - | - | - | - | - | 8 | YES | YES | YES | - | 16K8K32K64K | - | YES | BOTTOM | - | YES | - | - | - | - | 1.2mm | 8mm | 6mm | No | ROHS3 Compliant | - | ||
 M58LT256JSB8ZA6E Micron Technology Inc. | In Stock | - | - | 16 Weeks | Surface Mount | Surface Mount | 80-LBGA | - | 80 | - | - | - | - | - | - | - | Non-Volatile | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C~85°C TA | Tray | 2007 | e1 | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | - | TIN SILVER COPPER | - | - | - | 8542.32.00.51 | - | - | 1.7V~2V | BOTTOM | - | 260 | 1 | 1.8V | 1mm | - | 30 | M58LT256 | 64 | R-PBGA-B64 | - | 1.8V | 2V | 1.83/3.3V | - | 1.7V | Parallel, Serial | - | - | 256Mb 16M x 16 | - | 27mA | - | 52MHz | - | - | FLASH | Parallel | - | 16MX16 | - | - | 16 | 85ns | 24b | 256 Mb | - | - | - | - | - | - | Asynchronous | 16b | - | - | - | - | - | - | - | - | NO | NO | - | 4255 | 16K64K | 8words | - | BOTTOM | - | - | - | - | - | - | 1.2mm | 13mm | - | No | ROHS3 Compliant | - | ||
N25Q032A11EF640F Micron | 120 | - | - | - | - | - | - | YES | - | - | 8 | - | 108 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | N25Q032A11EF640F | - | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSON | VSON, | - | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Obsolete | DFN | 30 | 5.8 | - | Yes | 1.8 V | - | - | - | - | Yes | - | - | - | 3A991.B.1.A | - | - | - | - | - | 8542.32.00.51 | - | CMOS | - | DUAL | NO LEAD | 260 | 1 | - | 1.27 mm | compliant | - | - | 8 | R-PDSO-N8 | - | - | 2 V | - | INDUSTRIAL | 1.7 V | - | - | - | - | - | - | SYNCHRONOUS | - | - | - | - | - | - | 1MX32 | - | 1 mm | 32 | - | - | - | - | 33554432 bit | - | - | SERIAL | - | - | - | FLASH | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 mm | 5 mm | - | - | - |