- Terminal Position
- Memory Size
- Memory Types
- Number of Functions
- Packaging
- Memory Format
- Memory Interface
- Mounting Type
- Operating Temperature
- Package / Case
- Voltage - Supply
- Length
Attribute column
Manufacturer
Micron Technology Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Mounting Feature | Shell Material | Supplier Device Package | Housing Material | Insert Material | Backshell Material, Plating | Base Product Number | Brand | Contact Finish Mating | Contact Materials | Current-IEC | Current-UL | DRAM Type | Factory Pack QuantityFactory Pack Quantity | Manufacturer | Maximum Clock Frequency | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Mounting Styles | Package | Primary Material | Product Status | RoHS | Supply Voltage-Max | Supply Voltage-Min | Torque-Screw | Voltage-UL | Voltage, Rating | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | Number of Terminations | Termination | Temperature Coefficient | Connector Type | Type | Resistance | Number of Positions | Composition | Color | Applications | Power (Watts) | Fastening Type | Subcategory | Current Rating (Amps) | Pitch | Technology | Voltage - Supply | Orientation | Shielding | Ingress Protection | Insulation Height | Frequency | Frequency Stability | Output | Shell Finish | Shell Size - Insert | Termination Style | Function | Base Resonator | Current - Supply (Max) | ESR (Equivalent Series Resistance) | Failure Rate | Current - Supply (Disable) (Max) | Contact Tail Length | Memory Size | Load Capacitance | Number of Levels | Operating Mode | Shell Size, MIL | Frequency Tolerance | Clock Frequency | Spread Spectrum Bandwidth | Cable Opening | Contact Mating Finish | Access Time | Memory Format | Memory Interface | Data Bus Width | Wire Gauge or Range - AWG | Organization | Positions Per Level | Plug Wire Entry | Header Orientation | Write Cycle Time - Word, Page | Wire Gauge or Range - mm² | Product Type | Wire Strip Length | Screw Size | Absolute Pull Range (APR) | Features | Product Category | Memory Organization | Height Seated (Max) | Contact Finish Thickness - Mating | Material Flammability Rating | Ratings |
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 MT40A512M16AD-062E AUT:E TR Micron Technology | In Stock | - | - | - | TFBGA | - | - | - | - | - | - | - | Micron | - | - | - | - | - | 2000 | Micron Technology | - | - | - | Micron Technology Inc. | - | SMD/SMT | Tape & Reel (TR) | - | Active | Details | - | - | - | - | - | - | Reel | - | - | - | - | - | - | - | SDRAM - DDR4 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | DRAM | - | - | - | - | - | ||
MT29F2T08EMLEEJ4-QD:E TR Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | Micron | - | - | - | - | - | 2000 | Micron Technology | - | - | - | Micron Technology Inc. | - | - | Tape & Reel (TR) | - | Active | Details | - | - | - | - | - | - | Reel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NAND Flash | - | - | - | - | NAND Flash | - | - | - | - | - | ||
MT53E512M64D2HJ-046 AAT:B Micron Technology | 8 |
| - | Surface Mount | 556-TFBGA | - | - | 556-WFBGA (12.4x12.4) | - | - | - | - | Micron | - | - | - | - | - | 1360 | Micron Technology | - | - | Volatile | Micron Technology Inc. | - | SMD/SMT | Box | - | Active | Details | - | - | - | - | - | -40°C ~ 105°C (TC) | Tray | Automotive, AEC-Q100 | - | - | - | - | - | - | SDRAM - LPDDR4 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Gbit | - | - | - | - | - | 2.133 GHz | - | - | - | 3.5 ns | DRAM | Parallel | - | - | - | - | - | - | 18ns | - | DRAM | - | - | - | - | DRAM | 512M x 64 | - | - | - | - | ||
MT53E512M32D1ZW-046 AAT:B TR Micron Technology | 8 |
| - | Surface Mount | 200-TFBGA | - | - | 200-TFBGA (10x14.5) | - | - | - | - | Micron | - | - | - | - | - | 2000 | Micron Technology | - | - | Volatile | Micron Technology Inc. | - | SMD/SMT | Tape & Reel (TR) | - | Active | Details | - | - | - | - | - | -40°C ~ 105°C (TC) | Reel | Automotive, AEC-Q100 | - | - | - | - | - | - | SDRAM - LPDDR4 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 16Gbit | - | - | - | - | - | 2.133 GHz | - | - | - | 3.5 ns | DRAM | Parallel | - | - | - | - | - | - | 18ns | - | DRAM | - | - | - | - | DRAM | 512M x 32 | - | - | - | - | ||
MT40A512M16AD-062E AUT:E Micron Technology | In Stock | - | - | - | TFBGA | - | - | - | - | - | - | - | Micron | - | - | - | - | - | 1080 | Micron Technology | - | - | - | Micron Technology Inc. | - | SMD/SMT | Box | - | Active | Details | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | SDRAM - DDR4 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | DRAM | - | - | - | - | - | ||
MT53E1G32D2FW-046 AAT:B TR Micron Technology | 8 |
| - | Surface Mount | 200-TFBGA | - | - | 200-TFBGA (10x14.5) | - | - | - | - | Micron | - | - | - | - | - | 2000 | Micron Technology | - | - | Volatile | Micron Technology Inc. | - | SMD/SMT | Tape & Reel (TR) | - | Active | Details | - | - | - | - | - | -40°C ~ 105°C (TC) | Reel | Automotive, AEC-Q100 | - | - | - | - | - | - | SDRAM - LPDDR4 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Gbit | - | - | - | - | - | 2.133 GHz | - | - | - | 3.5 ns | DRAM | Parallel | - | - | - | - | - | - | 18ns | - | DRAM | - | - | - | - | DRAM | 1G x 32 | - | - | - | - | ||
MT62FDA1AFL-DC TR Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | Micron | - | - | - | - | - | 2500 | Micron Technology | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | Reel | - | - | - | - | - | - | - | SDRAM - LPDDR5 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | DRAM | - | - | - | - | - | ||
MT62F1G64D4EK-023 AUT:B TR Micron Technology | 8 |
| - | Surface Mount | 441-TFBGA | - | - | 441-TFBGA (14x14) | - | - | - | - | Micron | - | - | - | - | - | 2000 | Micron Technology | - | - | Volatile | Micron Technology Inc. | - | SMD/SMT | Tape & Reel (TR) | - | Active | Details | - | - | - | - | - | -40°C ~ 125°C | Reel | Automotive, AEC-Q100 | - | - | - | - | - | - | SDRAM - LPDDR5 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | SDRAM - Mobile LPDDR5 | 1.05V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 64Gbit | - | - | - | - | - | 2.133 GHz | - | - | - | - | DRAM | Parallel | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | DRAM | 1G x 64 | - | - | - | - | ||
MT40A8G4NEA-062E:F TR Micron Technology | 8 |
| - | Surface Mount | 78-TFBGA | - | - | 78-FBGA (7.5x11) | - | - | - | - | Micron | - | - | - | - | - | 2000 | Micron Technology | - | - | Volatile | Micron Technology Inc. | - | SMD/SMT | Tape & Reel (TR) | - | Active | Details | - | - | - | - | - | 0°C ~ 95°C (TC) | Reel | TwinDie™ | - | - | - | - | - | - | SDRAM - DDR4 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | SDRAM - DDR4 | 1.14V ~ 1.26V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Gbit | - | - | - | - | - | 1.6 GHz | - | - | - | 13.75 ns | DRAM | Parallel | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | DRAM | 8G x 4 | - | - | - | - | ||
MT29F8T08ESLEEG4-QD:E Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | Micron | - | - | - | - | - | 1120 | Micron Technology | - | - | - | Micron Technology Inc. | - | - | Box | - | Active | Details | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NAND Flash | - | - | - | - | NAND Flash | - | - | - | - | - | ||
MT62F1G64D4EK-023 AUT:B Micron Technology | 8 |
| - | Surface Mount | 441-TFBGA | - | - | 441-TFBGA (14x14) | - | - | - | - | Micron | - | - | - | - | - | 1190 | Micron Technology | - | - | Volatile | Micron Technology Inc. | - | SMD/SMT | Box | - | Active | Details | - | - | - | - | - | - | Tray | Automotive, AEC-Q100 | - | - | - | - | - | - | SDRAM - LPDDR5 | - | - | - | - | - | - | - | Memory & Data Storage | - | - | SDRAM - Mobile LPDDR5 | 1.05V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 64Gbit | - | - | - | - | - | 4.266 GHz | - | - | - | - | DRAM | Parallel | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | DRAM | 1G x 64 | - | - | - | - | ||
MT29F256G08EBHBFB16C3WC1-F Micron Technology | 8 |
| - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Micron Technology Inc. | - | - | Box | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT29F512G08EBLGEB27C3WC1-F Micron Technology | In Stock | - | - | Free Hanging (In-Line) | - | - | Aluminum Alloy | - | - | - | - | CA310 | - | Silver | - | - | - | - | - | - | - | - | - | ITT Cannon, LLC | - | - | Bulk | Metal | Active | - | - | - | - | - | 50V | -55°C ~ 125°C | - | MIL-DTL-5015, CA-B | - | - | - | Crimp | - | Plug, Male Pins | - | - | 5 | - | Olive Drab | - | - | Reverse Bayonet Lock | - | 41A, 245A | - | - | - | N (Normal) | - | IP67 - Dust Tight, Waterproof | - | - | - | - | Olive Drab Cadmium | 32-1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Shrink Boot Adapter | - | - | - | - | - | - | ||
MT53E128M32D2FW-046 AIT:A Micron Technology | 1000 |
| - | Free Hanging (In-Line) | 200-TFBGA | - | Stainless Steel | 200-TFBGA (10x14.5) | - | - | - | D38999/26LG | - | Gold | Copper Alloy | - | - | - | - | - | 2.133 GHz | + 85 C | Volatile | Amphenol Aerospace Operations | - 40 C | SMD/SMT | Bulk | Metal | Active | - | 1.1 V | - | - | - | - | -65°C ~ 200°C | - | Military, MIL-DTL-38999 Series III, Tri-Start™ TV | - | - | - | Crimp | - | Plug, Female Sockets | SDRAM Mobile - LPDDR4 | - | 11 | - | Silver | Aviation, Marine, Military | - | Threaded | - | - | - | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | N (Normal) | Unshielded | Environment Resistant | - | - | - | - | Nickel | 21-11 | - | - | - | - | - | - | - | - | 4Gbit | - | - | - | G | - | 2.133 GHz | - | - | - | 3.5 ns | DRAM | Parallel | 32 bit | - | 128 M x 32 | - | - | - | 18ns | - | - | - | - | - | Coupling Nut, Self Locking | - | 128M x 32 | - | 100.0µin (2.54µm) | - | - | ||
MT25QU256ABA8E12-MAAT Micron Technology | 2000 |
| - | Surface Mount | 24-TBGA | - | - | 24-T-PBGA (6x8) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Volatile | 3M | - | - | Box | - | Active | - | - | - | - | - | - | -40°C ~ 105°C (TA) | - | - | - | - | - | - | - | - | Shaft Balancer | - | - | - | - | - | - | - | - | - | - | FLASH - NOR (SLC) | 1.7V ~ 2V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 256Mbit | - | - | - | - | - | 166 MHz | - | - | - | 5 ns | FLASH | SPI - Quad I/O | - | - | - | - | - | - | 1.8ms | - | - | - | - | - | - | - | 32M x 8 | - | - | - | - | ||
MT53E1G64D4HJ-046 AAT:A Micron Technology | In Stock | - | - | Through Hole | - | - | - | - | Thermoplastic | - | - | VX14 | - | - | Brass | - | 7 A | - | - | - | - | - | - | Amphenol Anytek | - | - | Bulk | - | Active | - | - | - | - | 150 V | - | -40°C ~ 115°C | - | VX | - | - | - | - | - | - | Header, Male Pins, Shrouded (4 Side) | - | 14 | - | Orange | - | - | - | - | - | 0.138 (3.50mm) | - | - | - | - | - | 0.413 (10.49mm) | - | - | - | - | - | Solder | - | - | - | - | - | - | 0.138 (3.50mm) | - | - | 2 | - | - | - | - | - | - | Tin | - | - | - | - | - | - | 7 | - | 90°, Right Angle | - | - | - | - | - | - | - | - | - | - | - | UL94 V-0 | - | ||
MT41K512M16VRP-107 AAT:P TR Micron Technology | 2988 |
| - | Surface Mount | 4-SMD, No Lead | - | - | 96-FBGA (8x14) | - | - | - | - | Micron | - | - | - | - | - | 2000 | Micron Technology | - | - | Volatile | Suntsu Electronics, Inc. | - | SMD/SMT | Bulk | - | Active | - | 1.45 V | 1.283 V | - | - | - | -40°C ~ 85°C | Reel | SXT324 | 0.126 L x 0.098 W (3.20mm x 2.50mm) | - | - | - | - | - | MHz Crystal | - | - | - | - | - | - | - | Memory & Data Storage | - | - | SDRAM - DDR3L | 1.283V ~ 1.45V | - | - | - | - | 12 MHz | ±30ppm | - | - | - | - | - | - | - | 100 Ohms | - | - | - | 8Gbit | 12pF | - | Fundamental | - | ±15ppm | 933 MHz | - | - | - | 20 ns | DRAM | Parallel | - | - | - | - | - | - | 15ns | - | DRAM | - | - | - | - | DRAM | 512M x 16 | 0.031 (0.80mm) | - | - | - | ||
MT29GZ6A6BPIET-046AAT.112 Micron Technology | 1 |
| - | Free Hanging (In-Line) | 149-VFBGA | - | Aluminum | 149-VFBGA (8x9.5) | - | Thermoplastic | - | TVS06RF | Micron | Gold | Copper Alloy | - | - | - | 1260 | Micron Technology | - | - | Non-Volatile, Volatile | Amphenol Aerospace Operations | - | - | Bulk | Metal | Active | - | - | - | - | - | - | -65°C ~ 200°C | Tray | MIL-DTL-38999 Series III, Tri-Start™ TV | - | - | - | Crimp | - | Plug, Male Pins | - | - | 6 | - | Silver | Aviation, Marine, Military | - | Threaded | Memory & Data Storage | - | - | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | E | Shielded | Environment Resistant | - | - | - | - | Electroless Nickel | 17-6 | - | - | - | - | - | - | - | - | 8Gbit (NAND), 8Gbit (LPDDR4) | - | - | - | - | - | 2.133 GHz | - | - | - | 25 ns | FLASH, RAM | ONFI | - | - | - | - | - | - | 20ns, 30ns | - | Multichip Packages | - | - | - | Coupling Nut, Self Locking | Multichip Packages | 1G x 8 (NAND), 512M x 16 (LPDDR4) | - | 50.0µin (1.27µm) | - | - | ||
MT62F512M64D4EK-031 AUT:B TR Micron Technology | 35 |
| - | Surface Mount | 4-SMD, No Lead | - | - | 441-TFBGA (14x14) | - | - | - | SG-8101 | - | - | - | - | - | - | - | - | - | - | Volatile | EPSON | - | - | Tape & Reel (TR) | - | Active | - | - | - | - | - | - | -40°C ~ 105°C | - | SG-8101 | 0.276 L x 0.197 W (7.00mm x 5.00mm) | - | - | - | - | - | XO (Standard) | - | - | - | - | - | - | - | - | - | - | SDRAM - Mobile LPDDR5 | 1.8V ~ 3.3V | - | - | - | - | 11 MHz | ±20ppm | CMOS | - | - | - | Standby (Power Down) | Crystal | 6.8mA (Typ) | - | - | 1.1µA | - | 32Gbit | - | - | - | - | - | 3.2 GHz | - | - | - | - | DRAM | Parallel | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 512M x 64 | 0.055 (1.40mm) | - | - | - | ||
MT53E2G64D8TN-046 WT:A Micron Technology | In Stock | - | - | Surface Mount | 0402 (1005 Metric) | - | - | 0402 | - | - | - | - | - | - | - | - | - | LPDDR4 | - | - | - | - | Volatile | Stackpole Electronics Inc | - | - | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | - | Active | - | - | - | - | - | - | -55°C ~ 155°C | - | RMEF | 0.039 L x 0.020 W (1.00mm x 0.50mm) | ±1% | 2 | - | ±100ppm/°C | - | - | 200 kOhms | - | Thick Film | - | - | 0.063W, 1/16W | - | - | - | - | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 128Gbit | - | - | - | - | - | 2.133 GHz | - | - | - | 3.5 ns | DRAM | Parallel | - | - | - | - | - | - | 18ns | - | - | - | - | - | Automotive AEC-Q200 | - | 2G x 64 | 0.014 (0.35mm) | - | - | - |