- Terminal Position
- Memory Size
- Memory Types
- Number of Functions
- Packaging
- Memory Format
- Memory Interface
- Mounting Type
- Operating Temperature
- Package / Case
- Voltage - Supply
- Length
Attribute column
Manufacturer
Micron Technology Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Base Product Number | Block Organization | Brand | Cell Type | DRAM Type | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Mounting | Mounting Styles | MSL | Number of Words | Number of Words Code | Operating Temperature-Max | Package | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part # Aliases | Part Life Cycle Code | Product Status | Risk Rank | RoHS | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | Size / Dimension | Type | Additional Feature | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Number of Functions | Reach Compliance Code | Frequency | Frequency Stability | Output | Pin Count | JESD-30 Code | Function | Base Resonator | Current - Supply (Max) | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Current - Supply (Disable) (Max) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Spread Spectrum Bandwidth | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Data Bus Width | Organization | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Product Type | Density | Memory Density | Screening Level | Memory IC Type | Programming Voltage | Absolute Pull Range (APR) | Boot Block | Access Mode | Self Refresh | Product Category | Memory Organization | Height Seated (Max) | Length | Width | Ratings |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MT53D384M32D2DS-046 WT:E Micron Technology | In Stock | - | - | Surface Mount | 200-WFBGA | - | - | 200-WFBGA (10x14.5) | - | MT53D384 | - | - | - | - | - | - | - | - | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | -30°C ~ 85°C (TC) | - | - | - | - | - | - | SDRAM - Mobile LPDDR4 | 1.1V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 12Gbit | - | - | 2.133 GHz | - | - | - | DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 384M x 32 | - | - | - | - | ||
MT29F4G08ABAFAWP-AAT:F Micron Technology | 1000 | - | - | Surface Mount | TSOP-48 | - | - | 48-TSOP I | - | MT29F4G08 | - | Micron | - | - | 960 | - | Parallel | Micron Technology | - | - | - | + 105 C | Non-Volatile | Micron Technology Inc. | - | - 40 C | - | - | SMD/SMT | - | - | - | - | Tray | - | - | - | - | - | - | - | Active | - | Details | - | 3.6 V | 2.7 V | - | Asynchronous | - | - | -40°C ~ 105°C (TC) | Tray | MT29F | - | - | - | Memory & Data Storage | FLASH - NAND (SLC) | 2.7V ~ 3.6V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4Gbit | - | - | 50MHz | - | - | - | FLASH | Parallel | - | 8 bit | 512 M x 8 | - | - | - | NAND Flash | - | - | - | - | - | - | - | - | - | NAND Flash | 512M x 8 | - | - | - | - | ||
MT29F8G08ADAFAWP-AIT:F Micron Technology | 4192 |
| - | Surface Mount | TSOP-48 | - | - | 48-TSOP I | - | MT29F8G08 | Symmetrical | Micron | SLC NAND | - | 960 | - | Parallel | Micron Technology | - | - | 1.95 V | + 85 C | Non-Volatile | Micron Technology Inc. | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | - | 1024 MWords | - | - | Tray | - | - | - | - | - | - | - | Active | - | Details | TSOP-I | 3.6 V | 2.7 V | - | Asynchronous | 1.8 V | Automotive grade | -40 to 85 °C | Tray | MT29F | - | - | - | Memory & Data Storage | FLASH - NAND (SLC) | 2.7V ~ 3.6V | - | - | - | - | - | - | - | 48 | - | - | - | - | - | - | - | - | 8 Gbit | - | - | - | - | 35 mA | - | FLASH | Parallel | Sectored | 8 bit | 1 G x 8 | - | - | - | NAND Flash | 8 Gbit | - | Automotive | - | 1.7 to 1.95 V | - | No | - | - | NAND Flash | 1G x 8 | - | - | - | - | ||
MT53E768M64D4SQ-046 AAT ES:A Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | KYOCERA AVX | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MTA36ASS4G72XF1Z-2G9PR1AB Micron Technology | In Stock | - | - | Surface Mount | 4-SMD, No Lead | NO | - | - | 288 | - | - | - | - | - | - | MICRON TECHNOLOGY INC | - | Micron Technology Inc | MTA36ASS4G72XF1Z-2G9PR1AB | - | - | - | - | SiTime | - | - | - | - | - | - | 4294967296 words | 4000000000 | 95 °C | Tape & Reel (TR) | UNSPECIFIED | DIMM | NVDIMM-288 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | - | Active | Active | 5.73 | - | - | - | - | 1.2 V | - | - | - | -20°C ~ 70°C | - | SiT8208 | 0.197 L x 0.126 W (5.00mm x 3.20mm) | XO (Standard) | AUTO/SELF REFRESH; WD-MAX | - | CMOS | 3.3V | DUAL | NO LEAD | 1 | compliant | 74.25 MHz | ±10ppm | LVCMOS, LVTTL | - | R-XDMA-N288 | Standby (Power Down) | MEMS | 33mA | 1.26 V | OTHER | 1.14 V | 70µA | - | 1 | SYNCHRONOUS | - | - | - | - | - | - | - | - | 4GX72 | 31.4 mm | 72 | - | - | - | 309237645312 bit | - | DDR DRAM | - | - | - | DUAL BANK PAGE BURST | YES | - | - | 0.031 (0.80mm) | 133.35 mm | 5.8 mm | - | ||
EDB8132B3MC-1D-F-D Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT29F512G08CKCABH7-10:A Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Bulk | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT29F4T08EULEEM4-M:E TR Micron Technology | 6 |
| - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT40A1G8SA-062E IT:R Micron Technology | 4000 | - | - | - | FBGA-78 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.6 GHz | - | + 95 C | - | - | - | - 40 C | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.26 V | 1.14 V | - | - | - | - | - | - | - | - | SDRAM - DDR4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8 Gbit | - | - | - | - | - | - | - | - | - | 8 bit | 1 G x 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT53D1G64D4NW-046 WT:A Micron Technology | 100 | - | - | - | - | - | - | - | - | - | - | - | - | LPDDR4 | - | - | - | - | - | - | - | - | - | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Bulk | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.133GHz | - | - | 468ps | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT29VZZZCDA1SKPR-046 W.181 Micron Technology | 6000 |
| - | - | - | - | - | - | - | - | - | Micron | - | - | 1520 | - | - | Micron Technology | - | - | - | - | - | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Box | - | - | - | - | - | - | - | Active | - | Details | - | - | - | - | - | - | - | - | Tray | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Multichip Packages | - | - | - | - | - | - | - | - | - | Multichip Packages | - | - | - | - | - | ||
MT53E1G32D2FW-046 WT:B Micron Technology | 2000 | - | - | Surface Mount | 200-TFBGA | - | - | 200-TFBGA (10x14.5) | - | MT53E1G32 | - | Micron | - | - | 1360 | - | - | Micron Technology | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | - | SMD/SMT | MSL 3 - 168 hours | - | - | - | Tray | - | - | - | - | - | - | - | Active | - | Details | - | - | - | - | - | - | - | -25°C ~ 85°C (TC) | - | - | - | - | - | Memory & Data Storage | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32 Gbit | - | - | 2.133 GHz | - | - | 3.5 ns | DRAM | Parallel | - | - | 1 G x 32 | - | - | 18ns | DRAM | - | - | - | - | - | - | - | - | - | DRAM | 1G x 32 | - | - | - | - | ||
MT62F1G64D4EK-023 AAT:C TR Micron Technology | 6 |
| - | - | - | - | - | - | - | - | - | Micron | - | - | 2000 | - | - | Micron Technology | - | - | - | - | - | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | 557172-REEL | - | Active | - | Details | - | - | - | - | - | - | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | - | ||
MT53E1536M32D4DE-046 AAT:C Micron Technology | 5000 | - | - | Surface Mount | 200-TFBGA | - | - | 200-TFBGA (10x14.5) | - | - | - | Micron | - | - | 1360 | - | - | Micron Technology | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Tray | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | -40°C ~ 105°C (TC) | - | Automotive, AEC-Q100 | - | - | - | Memory & Data Storage | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 48Gbit | - | - | 2.133 GHz | - | - | 3.5 ns | DRAM | Parallel | - | - | - | - | - | 18ns | DRAM | - | - | - | - | - | - | - | - | - | DRAM | 1.5G x 32 | - | - | - | - | ||
MT62F2G32D4DS-023 WT:B Micron Technology | 35000 | - | - | Surface Mount | 200-WFBGA | - | - | 200-WFBGA (10x14.5) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | - | SMD/SMT | - | - | - | - | Box | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SDRAM - Mobile LPDDR5 | 1.05V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 64Gbit | - | - | 4.266 GHz | - | - | - | DRAM | Parallel | - | - | 2 G x 32 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2G x 32 | - | - | - | - | ||
MTFC128GAZAQJP-AAT Micron Technology | 10000 |
| - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 128Gbit | - | - | 200MHz | - | - | - | - | - | - | - | - | - | - | - | eMMC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT62F1G32D2DS-023 AAT:B Micron Technology | 343 | - | - | Surface Mount | 200-WFBGA | - | - | 200-WFBGA (10x14.5) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | - | SMD/SMT | - | - | - | - | Box | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | Automotive, AEC-Q100 | - | - | - | - | SDRAM - Mobile LPDDR5 | 1.05V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Gbit | - | - | 4.266 GHz | - | - | - | DRAM | Parallel | - | - | 1 G x 32 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1G x 32 | - | - | - | - | ||
MT62F1G32D2DS-023 AUT:B TR Micron Technology | 19 |
| - | Surface Mount | 200-WFBGA | - | - | 200-WFBGA (10x14.5) | - | - | - | Micron | - | - | 1050 | - | - | Micron Technology | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | - | SMD/SMT | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | -40°C ~ 125°C | - | Automotive, AEC-Q100 | - | - | - | Memory & Data Storage | SDRAM - Mobile LPDDR5 | 1.05V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Gbit | - | - | 3.2 GHz | - | - | - | DRAM | Parallel | - | - | - | - | - | - | DRAM | - | - | - | - | - | - | - | - | - | DRAM | 1G x 32 | - | - | - | - | ||
MT53E1G16D1FW-046 AAT:A TR Micron Technology | In Stock | - | - | Surface Mount | 200-TFBGA | - | - | 200-TFBGA (10x14.5) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Volatile | Micron Technology Inc. | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | -40°C ~ 105°C (TC) | - | Automotive, AEC-Q100 | - | - | - | - | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 16Gbit | - | - | 2.133 GHz | - | - | 3.5 ns | DRAM | Parallel | - | - | - | - | - | 18ns | - | - | - | - | - | - | - | - | - | - | - | 1G x 16 | - | - | - | - | ||
CT51264BF160BJ Micron Technology | In Stock | - | - | - | - | - | 204 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |