- Terminal Position
- Memory Size
- Memory Types
- Number of Functions
- Packaging
- Memory Format
- Memory Interface
- Mounting Type
- Operating Temperature
- Package / Case
- Voltage - Supply
- Length
Attribute column
Manufacturer
Micron Technology Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Model | Moisture Sensitivity Levels | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part # Aliases | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Product Type | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Endurance | Capacity | Form Factor | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Refresh Cycles | Common Flash Interface | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Product Category | Memory Organization | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MT29F512G08CEHBBJ4-3RES:B Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
EDFA164A1PB-GD-F-D Micron Technology | In Stock | - | - | - | - | YES | - | 216 | - | - | - | - | MICRON TECHNOLOGY INC | Micron Technology Inc | EDFA164A1PB-GD-F-D | - | - | - | - | - | 268435456 words | 256000000 | - | - | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | - | Obsolete | - | - | - | 5.83 | - | - | 1.2 V | - | - | - | - | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | - | - | CMOS | - | BOTTOM | BALL | - | 1 | 0.5 mm | unknown | - | S-PBGA-B216 | - | 1.3 V | - | - | 1.14 V | - | - | 1 | SYNCHRONOUS | - | - | - | - | - | 256MX64 | - | 1 mm | 64 | - | - | - | 17179869184 bit | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DUAL BANK PAGE BURST | YES | - | - | 15 mm | 15 mm | ||
EDF8164A1MA-GD-F-D Micron Technology | In Stock | - | - | - | - | YES | - | 253 | - | - | - | - | MICRON TECHNOLOGY INC | Micron Technology Inc | EDF8164A1MA-GD-F-D | - | - | - | - | - | 134217728 words | 128000000 | - | - | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | - | Obsolete | - | - | - | 5.83 | - | - | 1.2 V | - | - | - | - | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | - | - | CMOS | - | BOTTOM | BALL | - | 1 | 0.5 mm | unknown | - | S-PBGA-B253 | - | 1.3 V | - | - | 1.14 V | - | - | 1 | SYNCHRONOUS | - | - | - | - | - | 128MX64 | - | 0.9 mm | 64 | - | - | - | 8589934592 bit | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE BANK PAGE BURST | YES | - | - | 12.5 mm | 12.5 mm | ||
EDBA232B2MA-1D-F-D Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
EDB8132B4PM-1DAT-F-R Micron Technology | In Stock | - | - | - | - | YES | - | 168 | - | - | - | - | MICRON TECHNOLOGY INC | Micron Technology Inc | EDB8132B4PM-1DAT-F-R | - | - | - | - | - | 268435456 words | 256000000 | - | - | - | PLASTIC/EPOXY | VFBGA | POPBGA-168 | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | - | Active | - | - | NOT SPECIFIED | 5.73 | - | Yes | 1.2 V | - | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | - | - | CMOS | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.5 mm | compliant | - | S-PBGA-B168 | - | 1.3 V | - | - | 1.14 V | - | - | 1 | SYNCHRONOUS | - | - | - | - | - | 256MX32 | - | 0.82 mm | 32 | - | - | - | 8589934592 bit | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DUAL BANK PAGE BURST | YES | - | - | 12 mm | 12 mm | ||
M29F010B45N6E Micron Technology | In Stock | - | - | - | - | YES | - | 32 | 45 ns | - | - | - | STMICROELECTRONICS | STMicroelectronics | M29F010B45N6E | - | - | - | - | - | 131072 words | 128000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TSSOP | 8 X 20 MM, LEAD FREE, PLASTIC, TSOP-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | - | Obsolete | TSOP | - | NOT SPECIFIED | 5.54 | - | Yes | 5 V | - | - | e3/e6 | - | EAR99 | NOR TYPE | TIN/TIN BISMUTH | - | 8542.32.00.51 | Flash Memories | CMOS | - | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | - | - | - | ASYNCHRONOUS | - | 0.02 mA | - | - | - | 128KX8 | - | 1.2 mm | 8 | - | - | 0.0001 A | 1048576 bit | PARALLEL | - | FLASH | 5 V | 100000 Write/Erase Cycles | - | - | - | YES | YES | YES | 8 | 16K | - | - | - | - | - | - | - | - | - | - | - | 18.4 mm | 8 mm | ||
MTFDKBZ960TDZ-1AZ15ABYYR Micron Technology | 2981 |
| - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 7400 PRO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NVMe PCIe Gen 4 x 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 960 GB | E1.S | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MTFDKBA960TDZ-1AZ1ZABYYR Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 7400 PRO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NVMe PCIe Gen 4 x 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 960 GB | M.2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MTFDKCB960TDZ-1AZ1ZABYYR Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 7400 PRO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NVMe PCIe Gen 4 x 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 960 GB | U.3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
LSDMI32GBJWW Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
5962-8854504LA Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT62F2G64D8EK-023 AUT:C Micron Technology | 2845 |
| - | - | TFBGA-441-441 | - | - | - | - | Micron | - | 1190 | - | Micron Technology | - | - | Micron Technology Inc. | - | - | SMD/SMT | - | - | - | - | Box | - | - | - | - | - | - | 564352-TRAY | - | - | Active | - | - | Details | - | - | - | - | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DRAM | - | - | - | ||
MT29F2T08GELCEJ4-QM:C Micron Technology | 29 |
| - | - | - | - | - | - | - | Micron | - | 1120 | - | Micron Technology | - | - | Micron Technology Inc. | - | - | - | - | - | - | - | Box | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Memory & Data Storage | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NAND Flash | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NAND Flash | - | - | - | ||
MT35XU512ABA1G12-0AATES Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT48LC16M16A2P-6A IT Micron Technology | 800 | - | - | - | - | YES | - | 54 | 5.4 ns | - | 167 MHz | - | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48LC16M16A2P-6AIT | - | - | - | 1 | - | 16777216 words | 16000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | - | Active | TSOP2 | - | 30 | 5.12 | - | Yes | 3.3 V | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | - | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | 1 | SYNCHRONOUS | - | - | - | - | - | 16MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | 268435456 bit | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | 8192 | - | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | - | 22.22 mm | 10.16 mm | ||
MTFDDAK512MBF-1AN12ABHA Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
MT53E1G32D2FW-046 AUT:C TR Micron Technology | 43 |
| - | Surface Mount | 200-TFBGA | - | 200-TFBGA (10x14.5) | - | - | Micron | - | 2000 | - | Micron Technology | - | Volatile | Micron Technology Inc. | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | -40°C ~ 125°C (TC) | Automotive, AEC-Q100 | - | - | - | - | - | - | - | - | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32Gbit | - | - | 2.133 GHz | - | 3.5 ns | DRAM | Parallel | - | - | - | - | 18ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Micron | 1G x 32 | - | - | ||
M59DR032EA10ZB6 Micron Technology | In Stock | - | - | - | - | YES | - | 48 | 100 ns | - | - | - | STMICROELECTRONICS | STMicroelectronics | M59DR032EA10ZB6 | - | - | - | - | - | 2097152 words | 2000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LFBGA | 7 X 12 MM, 0.75 MM PITCH, TFBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | - | Transferred | BGA | - | NOT SPECIFIED | 5.2 | - | No | 1.8 V | - | - | e0 | - | 3A991.B.1.A | NOR TYPE | Tin/Lead (Sn63Pb37) | - | 8542.32.00.51 | Flash Memories | CMOS | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.75 mm | not_compliant | 48 | R-PBGA-B48 | Not Qualified | 2.2 V | 1.8/2 V | INDUSTRIAL | 1.65 V | - | - | - | ASYNCHRONOUS | - | 0.026 mA | - | - | - | 2MX16 | - | 1.35 mm | 16 | - | - | 0.00001 A | 33554432 bit | PARALLEL | - | FLASH | 1.8 V | - | - | - | - | YES | YES | YES | 8,63 | 4K,32K | 4 words | - | TOP | - | YES | - | - | - | - | - | - | 12 mm | 7 mm | ||
M29W320DB7AZA3F Micron Technology | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
M29W320EB70ZE6 Micron Technology | In Stock | - | - | - | - | YES | - | 48 | 70 ns | - | - | - | MICRON TECHNOLOGY INC | Micron Technology Inc | M29W320EB70ZE6 | - | - | - | - | - | 2097152 words | 2000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,32 | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | - | Active | BGA | - | 30 | 5.47 | - | No | 3 V | - | - | e0 | No | 3A991.B.1.A | NOR TYPE | TIN LEAD SILVER | BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | - | BOTTOM | BALL | 235 | 1 | 0.8 mm | not_compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | - | - | - | ASYNCHRONOUS | - | 0.02 mA | - | - | - | 2MX16 | - | 1.2 mm | 16 | - | - | 0.0001 A | 33554432 bit | PARALLEL | - | FLASH | 3 V | - | - | - | 8 | YES | YES | YES | 8,63 | 8K,64K | - | YES | BOTTOM | - | YES | - | - | - | - | - | - | 8 mm | 6 mm |