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Micron Technology Memory - Modules
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Package / Case | Surface Mount | Number of Pins | Memory Types | Number of Elements | Operating Temperature (Max.) | Usage Level | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Speed | Operating Mode | uPs/uCs/Peripheral ICs Type | Clock Frequency | Access Time | Data Bus Width | Organization | Output Characteristics | Memory Width | Density | Standby Current-Max | Memory Density | Max Frequency | Access Time (Max) | I/O Type | Refresh Cycles | Access Mode | Host Data Transfer Rate-Max | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 MT4HTF6464AZ-667H1 Micron Technology Inc. | In Stock | - | Datasheet | - | - | Socket | 240-UDIMM | - | 240 | DDR2 SDRAM | 4 | - | - | 2010 | e3 | yes | Obsolete | 3 (168 Hours) | 240 | EAR99 | MATTE TIN | 70°C | 0°C | AUTO/SELF REFRESH | - | - | DUAL | NO LEAD | 260 | 1 | 1.8V | 1mm | 30 | 240 | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | - | - | 1.9V | 1.7V | 512MB | 1 | 667MT/s | SYNCHRONOUS | - | 333MHz | - | - | - | 3-STATE | 64 | - | 0.028A | - | 667MHz | - | COMMON | 8192 | SINGLE BANK PAGE BURST | - | 30.5mm | 133.35mm | 30.175mm | - | ROHS3 Compliant | Lead Free | ||
 MT16KTF1G64HZ-1G9P1 Micron Technology Inc. | 2896 | - | Datasheet | 16 Weeks | - | - | 204-SODIMM | NO | 204 | DDR3L SDRAM | - | 70°C | Commercial grade | 2015 | - | yes | Active | 1 (Unlimited) | 204 | - | - | - | - | SELF REFRESH; WD-MAX | - | - | ZIG-ZAG | NO LEAD | 260 | 1 | 1.35V | - | 30 | - | - | - | - | 1.45V | - | COMMERCIAL | 1.283V | - | - | - | - | 8GB | 1 | 1866MT/s | SYNCHRONOUS | - | - | - | - | 1GX64 | - | 64 | - | - | 68719476736 bit | - | - | - | - | DUAL BANK PAGE BURST | - | 30.15mm | 67.6mm | 3.8mm | - | ROHS3 Compliant | - | ||
 MT18KSF1G72AZ-1G6P1 Micron Technology Inc. | 200 | - | Datasheet | 5 Weeks | - | - | 240-UDIMM | NO | 240 | DDR3L SDRAM | - | 70°C | - | 2015 | - | - | Active | 3 (168 Hours) | 240 | EAR99 | - | - | - | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | - | - | DUAL | NO LEAD | - | 1 | 1.35V | 1mm | - | - | - | - | - | 1.45V | - | COMMERCIAL | 1.235V | - | - | - | - | 8GB | 1 | 1600MT/s | SYNCHRONOUS | - | - | - | - | 1GX72 | - | 72 | - | - | 77309411328 bit | - | - | - | - | DUAL BANK PAGE BURST | - | 30.5mm | 133.35mm | 4mm | - | ROHS3 Compliant | - | ||
 MT4HTF6464HZ-667H1 Micron Technology Inc. | 1071 |
| Datasheet | - | - | Socket | 200-SODIMM | - | 200 | DDR2 SDRAM | 4 | - | - | 2010 | e3 | yes | Obsolete | 1 (Unlimited) | 200 | EAR99 | MATTE TIN | 70°C | 0°C | WD-MAX | - | - | ZIG-ZAG | - | 260 | 1 | 1.8V | 0.6mm | 30 | 200 | - | - | 1.8V | - | - | INDUSTRIAL | - | - | - | 1.9V | 1.7V | 512MB | 1 | 667MT/s | - | - | 333MHz | 900 ns | 64b | - | 3-STATE | 64 | - | 0.028A | - | 667MHz | - | COMMON | 8192 | - | - | 30.15mm | 67.6mm | - | No | ROHS3 Compliant | - | ||
 MTEDCBR002SAJ-1M2IT Micron Technology Inc. | 87 | - | Datasheet | 6 Weeks | - | - | Module | YES | - | FLASH - NAND (SLC) | - | - | - | 2013 | e3 | - | Active | 1 (Unlimited) | 10 | - | Matte Tin (Sn) | 85°C | -40°C | - | 8542.31.00.01 | 3.3V | UNSPECIFIED | NO LEAD | 260 | - | 3.3V | - | 30 | - | R-XXMA-N10 | - | 3.3V | - | - | INDUSTRIAL | - | 3.3V | USB | - | - | 2GB | - | - | - | SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE | - | - | - | - | - | - | 16 Gb | - | - | - | - | - | - | - | 30 MBps | 5.9mm | 36.9mm | 26.6mm | - | ROHS3 Compliant | Lead Free | ||
 MT36KSF2G72PZ-1G6P1 Micron Technology Inc. | 100 | - | Datasheet | - | - | - | 240-RDIMM | NO | 240 | DDR3L SDRAM | - | 70°C | - | - | - | yes | Active | 1 (Unlimited) | 240 | - | - | - | - | SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX | - | - | DUAL | NO LEAD | - | 1 | 1.35V | - | - | - | - | - | - | 1.45V | - | COMMERCIAL | 1.283V | - | - | - | - | 16GB | 1 | 1600MT/s | SYNCHRONOUS | - | - | - | - | 2GX72 | - | 72 | - | - | 154618822656 bit | - | - | - | - | DUAL BANK PAGE BURST | - | 30.5mm | 133.35mm | 4mm | - | ROHS3 Compliant | - | ||
 MTA18ASF2G72PZ-2G9E1 Micron Technology Inc. | 100 | - | Datasheet | 4 Weeks | - | - | - | - | - | DDR4 SDRAM | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 16GB | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
 MT8KTF51264AZ-1G9P1 Micron Technology Inc. | 100 | - | Datasheet | - | - | - | 240-UDIMM | NO | 240 | DDR3L SDRAM | - | 70°C | - | 2015 | - | - | Active | 1 (Unlimited) | 240 | EAR99 | - | - | - | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | - | - | DUAL | NO LEAD | - | 1 | 1.35V | 1mm | - | - | - | - | - | 1.45V | - | COMMERCIAL | 1.283V | - | - | - | - | 4GB | 1 | 1866MT/s | SYNCHRONOUS | - | - | - | - | 512MX64 | - | 64 | - | - | 34359738368 bit | - | - | - | - | SINGLE BANK PAGE BURST | - | 30.5mm | 133.35mm | 2.7mm | - | ROHS3 Compliant | - | ||
 MT18KSF1G72HZ-1G6P1 Micron Technology Inc. | 2534 | - | Datasheet | 5 Weeks | Gold | Socket | 204-SODIMM | - | 204 | DDR3L SDRAM | - | - | - | 2015 | - | - | Active | 3 (168 Hours) | 204 | EAR99 | - | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | - | - | ZIG-ZAG | NO LEAD | - | 1 | 1.35V | - | - | - | - | - | - | 1.45V | - | COMMERCIAL | 1.283V | - | - | - | - | 8GB | 1 | 1600MT/s | SYNCHRONOUS | - | - | - | 72b | 1GX72 | - | 72 | - | - | 77309411328 bit | 800MHz | - | - | - | DUAL BANK PAGE BURST | - | 30.15mm | 67.6mm | - | - | ROHS3 Compliant | - | ||
 MT9HTF12872PZ-80EH1 Micron Technology Inc. | In Stock | - | Datasheet | - | - | Socket | 240-RDIMM | - | 240 | DDR2 SDRAM | 9 | - | - | 2010 | - | - | Obsolete | 3 (168 Hours) | - | - | - | 70°C | 0°C | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.8V | - | - | - | - | - | - | 1.9V | 1.7V | 1GB | - | 800MT/s | - | - | - | - | - | - | - | - | - | - | - | 800MHz | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
MTA8ATF1G64AZ-2G6E1 Micron Technology Inc. | 10 | - | Datasheet | 16 Weeks | - | - | 288-UDIMM | - | - | DDR4 SDRAM | - | - | - | 2017 | - | - | Active | 3 (168 Hours) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 8GB | - | 2666MT/s | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
 MT9HTF12872PKZ-80EH1 Micron Technology Inc. | 583 | - | Datasheet | - | - | - | 244-MiniRDIMM | NO | 244 | DDR2 SDRAM | - | 70°C | - | 2010 | e4 | - | Obsolete | 3 (168 Hours) | 244 | EAR99 | GOLD | - | - | AUTO/SELF REFRESH | 8542.32.00.36 | - | DUAL | NO LEAD | - | 1 | 1.8V | 0.6mm | - | 244 | - | Not Qualified | - | 1.9V | 1.8V | COMMERCIAL | 1.7V | - | - | - | - | 1GB | 1 | 800MT/s | SYNCHRONOUS | - | 400MHz | - | - | 128MX72 | 3-STATE | 72 | - | - | 9663676416 bit | - | 0.4 ns | COMMON | 8192 | SINGLE BANK PAGE BURST | - | 3.8mm | 82mm | 30mm | - | ROHS3 Compliant | Lead Free | ||
 MT18HTF25672AZ-667H1 Micron Technology Inc. | In Stock | - | Datasheet | - | - | Socket | 240-UDIMM | - | 240 | DDR2 SDRAM | 18 | - | - | 2010 | - | - | Obsolete | 3 (168 Hours) | 240 | EAR99 | - | 70°C | 0°C | AUTO/SELF REFRESH | 8542.32.00.36 | - | DUAL | - | - | 1 | 1.8V | 1mm | - | 240 | - | - | 1.8V | - | - | COMMERCIAL | - | - | - | 1.9V | 1.7V | 2GB | 1 | 667MT/s | - | - | 333MHz | 900 ns | 72b | 256MX72 | 3-STATE | 72 | - | 0.126A | 19327352832 bit | 667MHz | - | COMMON | 8192 | - | - | 30.5mm | 133.35mm | - | No | ROHS3 Compliant | Lead Free | ||
 MT18HTF25672PZ-80EH1 Micron Technology Inc. | In Stock | - | Datasheet | - | - | Socket | 240-RDIMM | - | 240 | DDR2 SDRAM | 18 | - | - | 2011 | e3 | yes | Obsolete | 3 (168 Hours) | 240 | - | MATTE TIN | 70°C | 0°C | - | - | - | DUAL | NO LEAD | 260 | - | 1.8V | 1mm | 30 | - | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | - | - | 1.9V | 1.7V | 2GB | - | 800MT/s | - | - | 400MHz | - | - | 256MX72 | 3-STATE | 72 | - | 0.126A | 19327352832 bit | 800MHz | 0.4 ns | COMMON | 8192 | - | - | - | - | - | - | ROHS3 Compliant | - | ||
MT18KSF1G72PDZ-1G6P1 Micron Technology Inc. | 1000 | - | Datasheet | 4 Weeks | - | - | 240-RDIMM | NO | 240 | DDR3L SDRAM | - | 70°C | - | 2015 | - | - | Active | 3 (168 Hours) | 240 | EAR99 | - | - | - | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | - | - | DUAL | NO LEAD | - | 1 | 1.35V | 1mm | - | - | - | - | - | 1.45V | - | COMMERCIAL | 1.283V | - | - | - | - | 8GB | 1 | 1600MT/s | SYNCHRONOUS | - | - | - | - | 1GX72 | - | 72 | - | - | 77309411328 bit | - | - | - | - | DUAL BANK PAGE BURST | - | 30.5mm | 133.35mm | 4mm | - | ROHS3 Compliant | - | ||
 MT18HVF25672PZ-80EH1 Micron Technology Inc. | In Stock | - | Datasheet | - | - | Socket | 240-RDIMM | - | 240 | DDR2 SDRAM | 18 | - | - | 2010 | e3 | yes | Obsolete | 3 (168 Hours) | 240 | - | Matte Tin (Sn) | 70°C | 0°C | - | - | - | DUAL | NO LEAD | 260 | - | 1.8V | 1mm | 30 | - | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | - | - | 1.9V | 1.7V | 2GB | - | 800MT/s | - | - | 400MHz | - | - | 256MX72 | 3-STATE | 72 | - | 0.126A | 19327352832 bit | 800MHz | 0.4 ns | COMMON | 8192 | - | - | - | - | - | - | ROHS3 Compliant | - | ||
MTA18ASF2G72PDZ-2G6E1 Micron Technology Inc. | 100 | - | Datasheet | 5 Weeks | - | - | 288-RDIMM | - | - | DDR4 SDRAM | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 16GB | - | 2666MT/s | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
 MT4HTF3264HZ-667G1 Micron Technology Inc. | In Stock | - | Datasheet | - | - | Socket | 200-SODIMM | - | 200 | DDR2 SDRAM | 4 | - | - | 2010 | e3 | yes | Obsolete | 3 (168 Hours) | 200 | - | MATTE TIN | 70°C | 0°C | - | - | - | DUAL | - | 260 | - | 1.8V | 0.6mm | 30 | - | - | - | 1.8V | - | - | COMMERCIAL | - | - | - | 1.9V | 1.7V | 256MB | - | 667MT/s | - | - | 333MHz | - | 64b | - | 3-STATE | 64 | - | 0.028A | - | 667MHz | - | COMMON | 8192 | - | - | - | - | - | No | ROHS3 Compliant | - | ||
 MT9HTF12872AZ-80EH1 Micron Technology Inc. | In Stock | - | Datasheet | - | - | Socket | 240-UDIMM | - | 240 | DDR2 SDRAM | 9 | - | - | 2010 | e3 | yes | Obsolete | 3 (168 Hours) | 240 | - | MATTE TIN | 70°C | 0°C | - | - | - | DUAL | NO LEAD | 260 | - | 1.8V | 1mm | 30 | - | - | Not Qualified | 1.8V | - | - | COMMERCIAL | - | - | - | 1.9V | 1.7V | 1GB | - | 800MT/s | - | - | 400MHz | - | - | 128MX72 | 3-STATE | 72 | - | 0.063A | - | 800MHz | 0.4 ns | COMMON | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
 MTA36ASF4G72PZ-2G3B1 Micron Technology Inc. | 30000 | - | Datasheet | 5 Weeks | - | - | 288-RDIMM | NO | 288 | DDR4 SDRAM | - | 95°C | - | 2017 | - | yes | Obsolete | 1 (Unlimited) | 288 | - | - | - | - | AUTO/SELF REFRESH; WD-MAX | - | - | DUAL | NO LEAD | - | 1 | 1.2V | - | - | - | - | - | - | 1.26V | - | OTHER | 1.14V | - | - | - | - | 32GB | 1 | 2400MT/s | SYNCHRONOUS | - | - | - | - | 4GX72 | - | 72 | - | - | 309237645312 bit | - | - | - | - | DUAL BANK PAGE BURST | - | 31.4mm | 133.35mm | 3.9mm | - | ROHS3 Compliant | - |