- Manufacturer Part Number
- Manufacturer
- Configuration
- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- Risk Rank
- Diode Type
- Number of Elements
- Surface Mount
- Diode Element Material
- JESD-30 Code
Attribute column
Manufacturer
Microsemi Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Diode Element Material | Number of Elements | Power Dissipation (Max) | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Operating Temperature - Junction | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Max Forward Surge Current (Ifsm) | Max Junction Temperature (Tj) | Reverse Recovery Time-Max | Height | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 1N4148-1 Microsemi Corporation | 116 | - | Datasheet | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | SILICON | 1 | - | Bulk | 1999 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | - | 8541.10.00.70 | 4pF | - | WIRE | - | - | - | - | - | MIL-19500/116L | - | Qualified | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 500nA @ 75V | 1.2V @ 100mA | ISOLATED | 100mA | -65°C~175°C | - | - | - | 1.2V | 75V | 200mA | - | 5 ns | 500nA | 75V | - | - | - | 2A | 75V | - | 2A | 175°C | - | 1.91mm | No | Non-RoHS Compliant | Lead Free | ||
 JANTX1N5195 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | - | - | - | Bulk | 1997 | Military, MIL-PRF-19500/118 | e0 | no | Active | 1 (Unlimited) | - | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | - | - | - | - | - | - | - | - | - | - | - | - | Qualified | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 1μA @ 200V | 1V @ 100mA | - | 200mA | -65°C~175°C | - | - | - | 1V | - | - | - | - | - | 180V | - | - | - | 2A | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JANTXV1N6627US Microsemi Corporation | In Stock | - | Datasheet | - | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Surface Mount | Surface Mount | SQ-MELF, E | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/590 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | ULTRA FAST RECOVERY POWER | METALLURGICALLY BONDED | 8541.10.00.80 | - | END | WRAP AROUND | NOT SPECIFIED | - | NOT SPECIFIED | - | 2 | MIL-19500/590F | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 2μA @ 440V | 1.35V @ 2A | ISOLATED | 1.75A | -65°C~150°C | 4A | - | - | 1.5V | 440V | 1.75A | 1 | 30 ns | - | 440V | - | - | 40pF @ 10V 1MHz | 75A | - | - | - | - | - | - | - | Non-RoHS Compliant | - | ||
 UES803 Microsemi Corporation | 3250 | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Stud | - | - | 2 | SILICON | 1 | - | Bulk | 1996 | - | e0 | no | Active | Not Applicable | 1 | - | TIN LEAD | 175°C | -55°C | EFFICIENCY | - | 8541.10.00.80 | - | UPPER | SOLDER LUG | - | - | - | - | - | - | O-MUPM-D1 | - | Single | - | RECTIFIER DIODE | - | - | CATHODE | 70A | - | - | - | - | 975mV | - | - | 1 | 50 ns | 25μA | 150V | - | DO-5 | - | 800A | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 1N6536 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | - | Lead, Tin | Through Hole | Through Hole | A, Axial | - | SILICON | - | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | - | - | - | - | 8541.10.00.80 | - | - | WIRE | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | O-LALF-W2 | Not Qualified | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 10μA @ 400V | 1.5V @ 1A | ISOLATED | 1A | - | 1A | - | 1A DC | - | 400V | 1A | - | 30 ns | - | 400V | - | - | - | - | - | - | - | - | - | - | - | Non-RoHS Compliant | - | ||
 JANTX1N5415 Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/411 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | MIL-19500/411L | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 50V | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | 3A | - | - | 1.5V | 50V | 3A | 1 | 150 ns | 1μA | 50V | - | - | - | 80A | - | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JAN1N5819UR-1 Microsemi Corporation | In Stock | - | Datasheet | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | - | Surface Mount | Surface Mount | DO-213AB, MELF (Glass) | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/586 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 125°C | -55°C | - | METALLURGICALLY BONDED | 8541.10.00.80 | - | END | WRAP AROUND | - | - | - | - | 2 | MIL-19500/586F | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50μA @ 45V | 490mV @ 1A | ISOLATED | 1A | -65°C~125°C | 1A | - | - | 800mV | - | - | - | - | 50μA | 45V | - | - | 70pF @ 5V 1MHz | - | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JANTXV1N4247 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/286 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | HIGH RELIABILITY | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | MIL-19500 | - | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 600V | 1.3V @ 3A | ISOLATED | - | -65°C~175°C | 1A | - | - | 1.3V | 600V | 1A | - | 5 μs | 1μA | 600V | - | - | - | 25A | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JAN1N5188 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | SILICON | 1 | - | Bulk | - | Military, MIL-PRF-19500/424 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | - | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 2μA @ 400V | 1.5V @ 9A | ISOLATED | 3A | -65°C~175°C | 3A | - | - | 1.5V | - | - | 1 | 250 ns | 2μA | 400V | - | - | - | 80A | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 1N6621 Microsemi Corporation | In Stock | - | Datasheet | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | ULTRA FAST RECOVERY | HIGH RELIABILITY | 8541.10.00.80 | - | - | WIRE | NOT SPECIFIED | not_compliant | NOT SPECIFIED | - | 2 | - | - | Not Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 440V | 1.4V @ 1.2A | ISOLATED | 1.2A | -65°C~150°C | - | - | - | 1.6V | 440V | 1.2A | 1 | 30 ns | - | 440V | - | - | 10pF @ 10V 1MHz | 20A | - | 0.5μA | - | - | - | - | - | Non-RoHS Compliant | - | ||
 JAN1N1614 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Stud | - | - | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | - | 1 | - | Tin/Lead (Sn/Pb) | 175°C | -55°C | POWER | - | 8541.10.00.80 | - | UPPER | SOLDER LUG | - | - | - | - | 1 | - | O-MUPM-D1 | Qualified | Single | - | RECTIFIER DIODE | - | - | - | 15A | - | - | - | - | 1.5V | - | - | 1 | - | 50μA | 200V | - | - | - | 100A | - | - | - | - | 5μs | - | No | Non-RoHS Compliant | - | ||
 UES806 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Stud | - | - | 2 | SILICON | 1 | - | - | 1997 | - | e0 | no | Active | Not Applicable | 1 | - | TIN LEAD | 150°C | -55°C | EFFICIENCY | - | 8541.10.00.80 | - | UPPER | SOLDER LUG | - | - | - | - | 2 | - | O-MUPM-D1 | - | Single | - | RECTIFIER DIODE | - | - | CATHODE | 50A | - | - | - | - | 1.25V | - | - | 1 | 50 ns | 70μA | 400V | - | - | - | 600A | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JANTXV1N5809US Microsemi Corporation | 1750 | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | SQ-MELF, B | 2 | SILICON | 1 | 5W | Bulk | 1997 | Military, MIL-PRF-19500/477 | e0 | no | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | ULTRA FAST RECOVERY | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | - | END | WRAP AROUND | NOT SPECIFIED | - | NOT SPECIFIED | - | 2 | MIL-19500 | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 5μA @ 100V | 875mV @ 4A | ISOLATED | - | -65°C~175°C | 3A | - | - | 875mV | 100V | 3A | 1 | 30 ns | - | - | - | - | 60pF @ 10V 1MHz | 125A | - | - | - | - | - | - | - | Non-RoHS Compliant | Contains Lead | ||
 JANTXV1N645-1 Microsemi Corporation | In Stock | - | Datasheet | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | SILICON | 1 | 0.5W | Bulk | 1997 | Military, MIL-PRF-19500/240 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | WIRE | - | - | - | - | - | MIL-19500 | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 50nA @ 225V | 1V @ 400mA | ISOLATED | 400mA | -65°C~175°C | 0.4A | - | 400mA DC | 1V | - | - | - | - | - | 225V | - | - | - | 5A | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 1N5552US Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Surface Mount | Surface Mount | SQ-MELF, B | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | POWER | - | 8541.10.00.80 | - | END | WRAP AROUND | 235 | - | 20 | - | 2 | - | - | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 600V | 1.2V @ 9A | ISOLATED | 5A | -65°C~175°C | 3A | - | - | 1.2V | 600V | 3A | 1 | 2 μs | 1μA | 600V | - | - | - | 100A | - | - | - | - | - | - | Yes | Non-RoHS Compliant | - | ||
 JAN1N457 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | - | - | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | SILICON | 1 | - | Bulk | - | Military, MIL-PRF-19500/193 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | - | - | 8541.10.00.70 | - | - | WIRE | - | - | - | - | 2 | MIL-19500/193D | - | Qualified | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 25nA @ 70V | 1V @ 100mA | ISOLATED | 225mA | -65°C~150°C | 0.075A | - | 150mA | 1V | - | - | - | - | 1μA | 70V | - | - | - | 1A | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JANTXV1N5819-1 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | DO-204AL, DO-41, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/586 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -55°C | - | METALLURGICALLY BONDED | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | MIL-19500/586 | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50μA @ 45V | 490mV @ 1A | ISOLATED | 1A | -65°C~125°C | 1A | 45V | - | 850mV | - | - | - | - | 1nA | 40V | 45V | - | 70pF @ 5V 1MHz | 50A | - | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N6621US Microsemi Corporation | In Stock | - | Datasheet | 24 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Surface Mount | Surface Mount | SQ-MELF, A | 2 | SILICON | 1 | - | Bulk | - | Military, MIL-PRF-19500/585 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | ULTRA FAST RECOVERY | HIGH RELIABILITY | 8541.10.00.80 | - | END | WRAP AROUND | NOT SPECIFIED | - | NOT SPECIFIED | - | 2 | MIL-19500 | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 440V | 1.4V @ 1.2A | ISOLATED | 1.2A | -65°C~150°C | - | - | - | 1.6V | 440V | 2A | 1 | 30 ns | - | 440V | - | - | 10pF @ 10V 1MHz | 20A | - | 0.5μA | - | - | - | - | - | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N6074 Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Lead, Tin | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/503 | e0 | no | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 155°C | -65°C | ULTRA FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | WIRE | NOT SPECIFIED | not_compliant | NOT SPECIFIED | - | 2 | MIL-19500/503B | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 100V | 2.04V @ 9.4A | ISOLATED | 3A | -65°C~155°C | 3A | - | - | 2.04V | 100V | 850mA | 1 | 30 ns | - | 100V | - | - | - | 35A | - | - | - | - | - | - | Yes | Non-RoHS Compliant | - | ||
 JANTX1N6640 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | - | Lead, Tin | Through Hole | Through Hole | D, Axial | 2 | SILICON | 1 | - | Bulk | 1999 | Military, MIL-PRF-19500/609 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | WIRE | NOT SPECIFIED | - | NOT SPECIFIED | 1N6640 | 2 | MIL-19500/609D | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100nA @ 50V | 1V @ 200mA | ISOLATED | 300mA | -65°C~175°C | 0.3A | - | - | 1V | 50V | 300mA | - | 4 ns | - | 50V | - | DO-35 | - | 2.5A | - | 0.1μA | - | - | - | - | - | Non-RoHS Compliant | - |