- Manufacturer Part Number
- Manufacturer
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- Ihs Manufacturer
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- Reach Compliance Code
- Risk Rank
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- Number of Elements
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- JESD-30 Code
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Manufacturer
Microsemi Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Diode Element Material | Number of Elements | Operating Temperature (Max.) | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Output Current | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Operating Temperature - Junction | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Natural Thermal Resistance | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 JANTX1N5802US Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | - | Surface Mount | Surface Mount | SQ-MELF, A | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/477 | - | - | Active | 1 (Unlimited) | 2 | - | - | 175°C | -65°C | ULTRA FAST RECOVERY POWER | - | 8541.10.00.80 | - | END | WRAP AROUND | - | - | - | - | - | - | MIL-19500/477F | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 50V | - | 875mV @ 1A | ISOLATED | - | -65°C~175°C | - | - | - | 975mV | 50V | 1A | 1 | 25 ns | 1μA | 50V | - | 25pF @ 10V 1MHz | 35A | - | - | No | Non-RoHS Compliant | - | ||
 JANTX1N5807 Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/477 | e0 | no | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | ULTRA FAST RECOVERY | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500 | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 5μA @ 50V | - | 875mV @ 4A | ISOLATED | 6A | -65°C~175°C | 3A | - | - | 875mV | 50V | 3A | 1 | 30 ns | 5μA | 50V | - | 60pF @ 10V 1MHz | 125A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
JANTX1N5806US Microsemi Corporation | 5 | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | SQ-MELF, A | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/477 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | ULTRA FAST RECOVERY POWER | - | 8541.10.00.80 | - | END | WRAP AROUND | - | - | - | - | - | 2 | MIL-19500/477F | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 150V | - | 875mV @ 1A | ISOLATED | 2.5A | -65°C~175°C | - | - | - | 975mV | 150V | 1A | 1 | 25 ns | 1μA | 150V | - | 25pF @ 10V 1MHz | 35A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N4150UR-1 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | DO-213AA | - | 2 | SILICON | 1 | - | Bulk | - | Military, MIL-PRF-19500/231 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | - | 8541.10.00.70 | - | END | WRAP AROUND | - | - | - | - | - | 2 | - | - | Qualified | - | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 100nA @ 50V | - | 1V @ 200mA | ISOLATED | 200mA | -65°C~175°C | - | - | - | 1V | 50V | 200mA | - | 4 ns | 100nA | 50V | - | - | 4A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 CDLL4148 Microsemi Corporation | In Stock | - | Datasheet | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | DO-213AA | - | 2 | SILICON | 1 | - | Bulk | - | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 200°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | END | WRAP AROUND | - | - | - | - | - | 2 | - | - | - | - | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 500nA @ 75V | - | 1V @ 200mA | ISOLATED | 200mA | -65°C~175°C | - | - | - | 1.2V | 75V | 200mA | - | 20 ns | 500nA | 75V | - | 4pF @ 0V 1MHz | 2A | - | 325 °C/W | No | Non-RoHS Compliant | - | ||
 JAN1N4148-1 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | DO-204AH, DO-35, Axial | - | 2 | SILICON | 1 | - | Bulk | 1999 | Military, MIL-PRF-19500/116 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 200°C | -65°C | - | - | 8541.10.00.50 | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500/116L | - | Qualified | - | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 500nA @ 75V | - | 1.2V @ 100mA | ISOLATED | 200mA | -65°C~175°C | - | - | - | 1.2V | 75V | 200mA | - | 20 ns | 500nA | 75V | - | 4pF @ 0V 1MHz | 2A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 1N5419 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | - | Surface Mount | SQ-MELF, B | NO | - | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | - | - | - | HIGH RELIABILITY | 8541.10.00.80 | - | AXIAL | WIRE | NOT SPECIFIED | - | - | NOT SPECIFIED | - | 2 | - | O-LALF-W2 | Not Qualified | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 500V | - | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | 3A | 500V | 3A | - | - | - | 1 | 250ns | - | - | - | - | - | 80A | - | - | Non-RoHS Compliant | - | ||
 JAN1N5550 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/420 | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | POWER | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | - | - | - | - | Qualified | - | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 200V | - | 1.2V @ 9A | ISOLATED | 5A | -65°C~175°C | 5A | - | - | 1.2V | 200V | 3A | 1 | 2 μs | 1μA | 200V | - | - | 100A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 1N6638US Microsemi Corporation | In Stock | - | Datasheet | 6 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Lead, Tin | Surface Mount | - | MELF | - | 2 | SILICON | 1 | - | - | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | END | WRAP AROUND | - | - | - | - | - | 2 | - | - | - | - | Single | - | RECTIFIER DIODE | - | - | - | ISOLATED | 300mA | - | 0.3A | - | - | 1.1V | - | - | - | 4.5 ns | 500nA | 125V | - | - | 2.5A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 1N5417US Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Surface Mount | Surface Mount | E-MELF | - | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | - | TIN LEAD | 175°C | -65°C | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | - | END | WRAP AROUND | NOT SPECIFIED | - | - | NOT SPECIFIED | - | 2 | - | - | Not Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 200V | - | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | 3A | - | - | 1.5V | 200V | 3A | 1 | 150 ns | 1μA | 200V | - | - | 80A | - | - | Yes | Non-RoHS Compliant | - | ||
 JANTXV1N5418 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/411 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500/411L | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 400V | - | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | 3A | - | - | 1.5V | 400V | 3A | 1 | 150 ns | 1μA | 400V | - | - | 80A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
1N5811US Microsemi Corporation | 1 | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Surface Mount | Surface Mount | SQ-MELF, B | - | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | 175°C | -65°C | ULTRA FAST RECOVERY | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | - | END | WRAP AROUND | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | 2 | - | - | - | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 5μA @ 50V | - | 875mV @ 4A | ISOLATED | 6A | -65°C~175°C | 3A | - | - | 875mV | 150V | 3A | 1 | 30 ns | 5μA | 150V | - | 60pF @ 10V 1MHz | 125A | - | 52 °C/W | Yes | Non-RoHS Compliant | Contains Lead | ||
 JANTXV1N5419 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/411 | e0 | - | Discontinued | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500/411L | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 500V | - | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | 3A | - | - | 1.5V | 500V | 3A | 1 | 150 ns | 1μA | 500V | - | - | 80A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N3291 Microsemi Corporation | In Stock | - | Datasheet | - | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Stud | Chassis, Stud Mount | DO-205AA, DO-8, Stud | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/246 | e0 | no | Discontinued | 1 (Unlimited) | 1 | EAR99 | Tin/Lead (Sn/Pb) | 200°C | -65°C | POWER | - | 8541.10.00.80 | - | UPPER | HIGH CURRENT CABLE | - | - | - | - | - | 1 | - | O-MUPM-H1 | Qualified | - | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 10mA @ 400V | - | 1.55V @ 310A | CATHODE | 100A | -65°C~200°C | - | - | - | 1.55V | - | - | 1 | - | 10mA | 400V | - | - | 1.6kA | - | - | No | Non-RoHS Compliant | - | ||
 1N3957 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | - | Through Hole | A, Axial | NO | - | SILICON | 1 | 175°C | Bulk | 1997 | - | e0 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | - | - | - | HIGH RELIABILITY | 8541.10.00.80 | - | - | WIRE | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | O-LALF-W2 | - | SINGLE | - | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 1000V | - | 1.1V @ 1A | ISOLATED | - | -65°C~175°C | 1A | 1000V | 1A | - | - | - | - | - | - | - | 1000V | - | - | - | - | - | Non-RoHS Compliant | - | ||
 UES1302 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | Axial | - | 2 | SILICON | 1 | - | Bulk | 1996 | - | e0 | no | Active | Not Applicable | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -55°C | EFFICIENCY | - | 8541.10.00.80 | 100V | - | WIRE | - | - | 6A | - | - | - | - | - | - | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 5μA @ 100V | 6A | 925mV @ 6A | ISOLATED | 6A | -55°C~175°C | - | - | - | 925mV | 100V | 6A | 1 | 30 ns | 5μA | 100V | - | - | 125A | - | - | No | RoHS Compliant | Lead Free | ||
 1N5618US Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | SQ-MELF, A | - | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 200°C | -65°C | - | HIGH RELIABILITY | 8541.10.00.80 | - | END | WRAP AROUND | NOT SPECIFIED | - | - | NOT SPECIFIED | - | 2 | - | - | Not Qualified | - | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 500nA @ 600V | - | 1.3V @ 3A | ISOLATED | - | -65°C~200°C | 1A | - | - | 1.3V | 600V | 1A | - | 2 μs | 500nA | 600V | - | - | 30A | - | - | Yes | Non-RoHS Compliant | - | ||
JAN1N4454UR-1 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | DO-213AA | - | 2 | SILICON | 1 | - | Bulk | 1999 | Military, MIL-PRF-19500/144 | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -55°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | END | WRAP AROUND | - | - | - | - | - | 2 | - | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100nA @ 50V | - | 1V @ 10mA | ISOLATED | 200mA | -55°C~175°C | - | - | 200mA DC | 1V | 50V | 4A | - | 44 ns | 100nA | 50V | - | - | 4A | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JAN1N5617 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | A, Axial | - | 2 | SILICON | 1 | - | Bulk | - | Military, MIL-PRF-19500/429 | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | - | 2 | - | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 400V | - | 1.6V @ 3A | ISOLATED | - | -65°C~175°C | 1A | - | - | 1.6V | 400V | 1A | - | 150 ns | 500nA | 400V | - | - | 30A | - | - | No | Non-RoHS Compliant | - | ||
 JANTX1N5615 Microsemi Corporation | 150 | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | A, Axial | - | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/429 | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -55°C | - | - | 8541.10.00.80 | 200V | - | WIRE | - | - | 1A | - | 1N5615 | 2 | - | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 200V | 1A | 1.6V @ 3A | ISOLATED | - | -65°C~175°C | - | - | - | 1.6V | 200V | 1A | - | 150 ns | 500nA | 200V | - | 45pF @ 12V 1MHz | 30A | - | - | No | Non-RoHS Compliant | Contains Lead |