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Manufacturer
Microsemi Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Diode Element Material | Number of Elements | Power Dissipation (Max) | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Capacitance | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Output Current | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Operating Temperature - Junction | Max Surge Current | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Recovery Time | Reverse Voltage (DC) | Height | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 1N6079 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Lead, Tin | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | - | TIN LEAD | 155°C | -65°C | ULTRA FAST RECOVERY POWER | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | - | - | - | WIRE | NOT SPECIFIED | - | - | NOT SPECIFIED | - | 2 | MIL-19500/503 | - | Not Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 10μA @ 50V | - | 1.5V @ 37.7A | ISOLATED | 12A | -65°C~155°C | - | - | - | - | - | 50V | 2A | 1 | 30 ns | - | 100V | - | - | - | - | - | - | - | - | - | - | Non-RoHS Compliant | - | ||
 APT30DQ120KG Microsemi Corporation | 900 | - | Datasheet | 31 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | - | Through Hole | Through Hole | TO-220-3 | - | SILICON | 1 | - | Tube | 1997 | - | e3 | yes | Active | 1 (Unlimited) | 2 | EAR99 | PURE MATTE TIN | 175°C | -55°C | ULTRA FAST SOFT RECOVERY | - | 8541.10.00.80 | - | 1.2kV | - | - | - | - | 30A | - | - | 3 | - | R-PSFM-T2 | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100μA @ 1200V | 30A | 3.3V @ 30A | CATHODE | 30A | -55°C~175°C | - | - | 1200V | - | 3.3V | 1.2kV | 30A | 1 | 320 ns | 100μA | 1.2kV | - | TO-220AC | - | 210A | - | - | - | - | - | No | RoHS Compliant | Lead Free | ||
 JANTX1N6642 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | SILICON | 1 | 0.75W | Bulk | 1997 | Military, MIL-PRF-19500/578 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500/578E | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 75V | - | 1.2V @ 100mA | ISOLATED | - | -65°C~175°C | - | 0.3A | - | - | 1.2V | 75V | 300mA | - | 20 ns | 500nA | 100V | - | - | 5pF @ 0V 1MHz | 2.5A | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N5420 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Through Hole | Through Hole | B, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/411 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500/411L | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 600V | - | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | - | 3A | - | - | 1.5V | 600V | 3A | 1 | 400 ns | 1μA | 600V | - | - | - | 80A | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N914 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | - | Lead, Tin | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | SILICON | 1 | - | Bulk | 1999 | Military, MIL-PRF-19500/116 | e0 | no | Active | 1 (Unlimited) | - | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Qualified | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 500nA @ 75V | - | 1.2V @ 50mA | - | - | -65°C~175°C | - | 0.075A | - | 200mA | 1.2V | - | - | - | 5ns | - | 75V | - | - | 4pF @ 0V 1MHz | 2A | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N6677UR-1 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Surface Mount | Surface Mount | DO-213AA (Glass) | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/610 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 125°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | END | WRAP AROUND | - | - | - | - | - | 2 | MIL-19500/610E | - | Qualified | Single | Small Signal =< 200mA (Io), Any Speed | Schottky | 5μA @ 40V | - | 500mV @ 200mA | ISOLATED | 200mA | -65°C~125°C | - | - | - | - | 700mV | - | - | - | - | 5μA | 40V | - | - | - | - | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 1N5551US Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Surface Mount | Surface Mount | SQ-MELF, B | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | POWER | HIGH RELIABILITY | 8541.10.00.80 | - | - | END | WRAP AROUND | NOT SPECIFIED | - | - | NOT SPECIFIED | - | 2 | - | - | Not Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 400V | - | 1.2V @ 9A | ISOLATED | 5A | -65°C~175°C | - | 5A | - | - | 1.2V | 400V | 3A | 1 | 2 μs | 1μA | 400V | - | - | - | 100A | - | - | - | - | - | Yes | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N5551US Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | - | - | Surface Mount | Surface Mount | SQ-MELF, B | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/420 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | POWER | - | 8541.10.00.80 | - | - | END | WRAP AROUND | 235 | - | - | 20 | - | - | - | - | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 400V | - | 1.2V @ 9A | ISOLATED | 5A | -65°C~175°C | - | 3A | - | - | 1.2V | - | - | 1 | 2 μs | 1μA | 400V | - | - | - | 100A | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JAN1N3613 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | - | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/228 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -55°C | - | HIGH RELIABILITY | 8541.10.00.80 | - | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500 | - | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 100μA @ 300V | - | 1.1V @ 1A | ISOLATED | - | -65°C~175°C | - | 1A | - | - | 1.1V | 600V | 1A | - | - | 1μA | 600V | - | DO-41 | - | 30A | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JANTX1N5550 Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | - | - | Through Hole | Through Hole | B, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/420 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | POWER | - | 8541.10.00.80 | - | - | - | WIRE | - | - | - | - | - | 2 | - | - | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 200V | - | 1.2V @ 9A | ISOLATED | 5A | -65°C~175°C | - | 5A | - | - | 1.2V | 200V | 5A | 1 | 2 μs | 1μA | 200V | - | - | - | 100A | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JAN1N5417 Microsemi Corporation | 1690 | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | - | Through Hole | Through Hole | B, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/411 | - | - | Active | 1 (Unlimited) | 2 | - | - | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | END | WRAP AROUND | - | - | - | - | - | 2 | MIL-19500/411L | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 200V | - | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | - | 3A | - | - | 1.5V | 200V | 3A | 1 | 150 ns | 1μA | 200V | - | - | - | 80A | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
1N3611 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | - | - | Through Hole | Through Hole | A, Axial | 2 | - | - | - | Bulk | 1997 | - | - | - | Active | 1 (Unlimited) | - | - | - | 175°C | -65°C | - | - | - | - | - | - | - | - | - | - | - | 1N3611 | - | - | - | - | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 200V | - | 1.1V @ 1A | - | - | -65°C~175°C | - | - | 200V | 1A | 1.1V | 200V | 1A | - | - | 1μA | 200V | - | - | - | 30A | - | - | - | - | - | Yes | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N5712-1 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | - | - | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/444 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | - | WIRE | - | - | - | - | - | 2 | MIL-19500/444 | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150nA @ 16V | - | 1V @ 35mA | ISOLATED | 75mA | -65°C~150°C | - | 0.075A | - | 750mA | 1V | - | - | - | - | - | 20V | 16V | - | 2pF @ 0V 1MHz | - | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 1N5420 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | - | Through Hole | Through Hole | B, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | HIGH RELIABILITY | 8541.10.00.80 | - | - | - | WIRE | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | 2 | - | - | Not Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 600V | - | 1.5V @ 9A | ISOLATED | - | -65°C~175°C | - | 3A | - | - | 1.5V | 600V | 3A | 1 | 400 ns | 1μA | 600V | - | - | - | 80A | - | - | - | - | - | Yes | Non-RoHS Compliant | - | ||
1N6628 Microsemi Corporation | In Stock | - | Datasheet | 17 Weeks | - | Lead, Tin | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 150°C | -65°C | ULTRA FAST RECOVERY | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | 40pF | 600V | - | WIRE | NOT SPECIFIED | - | 4A | NOT SPECIFIED | 1N6628 | 2 | - | - | Not Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 2μA @ 600V | 4A | 1.35V @ 2A | ISOLATED | 1.75A | -65°C~150°C | - | - | - | - | 1.5V | 600V | 1.75A | 1 | 45 ns | - | 660V | - | - | - | 75A | - | - | - | - | - | Yes | RoHS Compliant | Lead Free | ||
 JAN1N4944 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | - | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/360 | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.80 | - | - | - | WIRE | - | - | - | - | - | - | MIL-19500 | - | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 400V | - | 1.3V @ 1A | ISOLATED | - | -65°C~175°C | - | 1A | - | - | 1.3V | 400V | 1A | - | 150 ns | 1μA | 400V | - | - | - | 15A | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTXV1N5614US Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Surface Mount | Surface Mount | SQ-MELF, A | 2 | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/427 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 200°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.80 | - | - | END | WRAP AROUND | - | - | - | - | - | 2 | - | - | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 500nA @ 200V | - | 1.3V @ 3A | ISOLATED | - | -65°C~200°C | - | 1A | - | - | 1.3V | 200V | 1A | - | 2 μs | 500nA | 200V | - | - | - | 30A | - | - | - | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 UPR10E3/TR7 Microsemi Corporation | In Stock | - | Datasheet | 18 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | DO-216AA | 2 | SILICON | 1 | - | Tape & Reel (TR) | 1997 | - | e3 | - | Active | 1 (Unlimited) | 1 | EAR99 | MATTE TIN | 150°C | -55°C | EFFICIENCY | - | 8541.10.00.80 | - | 100V | DUAL | GULL WING | - | - | 2.5A | - | UPR10 | - | - | S-PDSO-G1 | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 2μA @ 100V | 2.5A | 975mV @ 2A | - | 2.5A | -55°C~150°C | 25A | - | - | - | 975mV | 100V | 2.5A | 1 | 25 ns | 2μA | 100V | - | - | - | 25A | 25 ns | 100V | 1.14mm | 2.03mm | 2.03mm | No | RoHS Compliant | Lead Free | ||
1N5618 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Lead, Tin | Through Hole | Through Hole | A, Axial | 2 | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | 200°C | -65°C | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | - | - | - | WIRE | NOT SPECIFIED | - | - | NOT SPECIFIED | - | 2 | - | - | Not Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 500nA @ 600V | - | 1.3V @ 3A | ISOLATED | - | -65°C~200°C | - | 1A | - | - | 1.3V | 600V | 1A | - | 2 μs | 500nA | 600V | - | - | - | 30A | - | - | - | - | - | Yes | Non-RoHS Compliant | Contains Lead | ||
 UPS840/TR13 Microsemi Corporation | In Stock | - | Datasheet | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | DO-216AA | - | SILICON | 1 | - | Tape & Reel (TR) | 1997 | - | - | - | Active | 1 (Unlimited) | 2 | EAR99 | - | 125°C | -55°C | EFFICIENCY | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | 8541.10.00.80 | - | - | SINGLE | GULL WING | - | - | - | - | UPS840 | - | - | R-PSSO-G2 | - | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 5mA @ 40V | - | 450mV @ 8A | CATHODE | 8A | -55°C~125°C | - | 8A | - | - | 490mV | 40V | 8A | 1 | - | 5mA | 40V | - | - | - | 150A | - | - | - | - | - | No | Non-RoHS Compliant | - |