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Manufacturer
Microsemi Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Supplier Device Package | Diode Element Material | Number of Elements | Power Dissipation (Max) | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | Qualification Status | Polarity | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Power Dissipation | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Max Reverse Leakage Current | Operating Temperature - Junction | Output Current-Max | Test Current | Reference Voltage | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Zener Voltage | Voltage Tol-Max | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | JEDEC-95 Code | Working Test Current | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Voltage Tolerance | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 JAN1N5415 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/411 | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | HIGH RELIABILITY | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | MIL-19500 | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 50V | - | 1.5V @ 9A | ISOLATED | - | - | -65°C~175°C | 3A | - | - | - | - | 1.5V | 50V | 3A | - | - | 1 | 150 ns | 1μA | 50V | - | - | - | 80A | - | No | Non-RoHS Compliant | - | ||
 JAN1N5811 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | - | SILICON | 1 | 5W | Bulk | 1997 | Military, MIL-PRF-19500/477 | e0 | no | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | 175°C | -65°C | ULTRA FAST RECOVERY POWER | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | MIL-19500 | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 5μA @ 150V | - | 875mV @ 4A | ISOLATED | 6A | - | -65°C~175°C | 6A | - | - | - | - | 875mV | 150V | 6A | - | - | 1 | 30 ns | 5μA | 150V | - | - | 60pF @ 10V 1MHz | 125A | - | No | Non-RoHS Compliant | Contains Lead | ||
 1N6080 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Through Hole | Through Hole | A, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Discontinued | 1 (Unlimited) | 2 | - | TIN LEAD | 155°C | -65°C | ULTRA FAST RECOVERY POWER | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | - | - | WIRE | NOT SPECIFIED | - | NOT SPECIFIED | - | 2 | MIL-19500/503 | Not Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 10μA @ 100V | - | 1.5V @ 37.7A | ISOLATED | 12A | - | -65°C~155°C | - | - | - | - | - | 1.5V | 100V | 2A | - | - | 1 | 30 ns | - | 100V | - | - | - | 175A | - | - | Non-RoHS Compliant | Contains Lead | ||
 1N5619 Microsemi Corporation | In Stock | - | Datasheet | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | A, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | - | - | WIRE | NOT SPECIFIED | not_compliant | NOT SPECIFIED | - | 2 | - | Not Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 600V | - | 1.6V @ 3A | ISOLATED | - | - | -65°C~175°C | 1A | - | - | - | - | 1.6V | 600V | 1A | - | - | - | 250 ns | 500nA | 600V | - | - | 25pF @ 12V 1MHz | 30A | - | Yes | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N5819-1 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | DO-204AL, DO-41, Axial | 2 | DO-204AL (DO-41) | - | - | - | Bulk | 1997 | Military, MIL-PRF-19500/586 | - | - | Active | 1 (Unlimited) | - | - | - | 150°C | -55°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100μA @ 45V | - | 600mV @ 1A | - | 1A | - | -65°C~125°C | - | - | - | 45V | 1A | 800mV | 45V | 1A | - | - | - | - | 100μA | 40V | - | - | 70pF @ 5V 1MHz | - | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N4248 Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | - | E3 | 2 | - | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/286 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -55°C | - | HIGH RELIABILITY | 8541.10.00.80 | - | AXIAL | WIRE | - | - | - | - | 2 | MIL-19500 | Qualified | - | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 800V | - | 1.3V @ 3A | ISOLATED | - | - | -65°C~175°C | 1A | - | - | - | - | 1.3V | 800V | 1A | - | - | - | 5 μs | 1μA | 800V | - | - | - | 25A | - | No | Non-RoHS Compliant | - | ||
 JAN1N5822 Microsemi Corporation | In Stock | - | Datasheet | - | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/620 | e0 | no | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 125°C | -65°C | GENERAL PURPOSE | METALLURGICALLY BONDED | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100μA @ 40V | - | 500mV @ 3A | ISOLATED | 3A | - | -65°C~125°C | 3A | - | - | - | - | 700mV | - | - | - | - | 1 | - | 100μA | 40V | - | - | - | 150A | - | No | Non-RoHS Compliant | - | ||
 1N6642US Microsemi Corporation | In Stock | - | Datasheet | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Surface Mount | Surface Mount | SQ-MELF, D | 2 | - | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | END | WRAP AROUND | - | - | - | - | - | - | - | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 75V | - | 1.2V @ 100mA | ISOLATED | 300mA | - | -65°C~175°C | 0.3A | - | - | - | - | 1.2V | 75V | 300mA | - | - | - | 5 ns | 500nA | 75V | - | - | 5pF @ 0V 1MHz | 2.5A | - | No | Non-RoHS Compliant | Contains Lead | ||
 1N5196UR Microsemi Corporation | In Stock | - | Datasheet | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | DO-213AA (Glass) | 2 | - | SILICON | 1 | 0.5W | Bulk | 1997 | - | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | END | WRAP AROUND | - | - | - | - | 2 | - | - | - | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 25nA @ 225V | - | 1V @ 100mA | ISOLATED | 200mA | - | -65°C~175°C | - | - | - | - | - | - | 225V | 200mA | - | - | - | - | - | 225V | - | - | - | 2A | - | No | Non-RoHS Compliant | - | ||
 JANTX1N6640US Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | - | - | Surface Mount | Surface Mount | SQ-MELF, D | 2 | - | SILICON | 1 | - | Bulk | 1999 | Military, MIL-PRF-19500/609 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | END | WRAP AROUND | 235 | - | 20 | 1N6640 | 2 | MIL-19500/609D | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100nA @ 50V | - | 1V @ 200mA | ISOLATED | 300mA | - | -65°C~175°C | 0.3A | - | - | - | - | 1V | 50V | 300mA | - | - | - | 4 ns | 100nA | 50V | - | - | - | 2.5A | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N5804US Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | Surface Mount | SQ-MELF, A | 2 | - | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/477 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | ULTRA FAST RECOVERY POWER | - | 8541.10.00.80 | - | END | WRAP AROUND | - | - | - | - | - | MIL-19500/477F | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 100V | - | 875mV @ 1A | ISOLATED | - | - | -65°C~175°C | - | - | - | - | - | 975mV | 100V | 1A | - | - | 1 | 25 ns | 1μA | 100V | - | - | 25pF @ 10V 1MHz | 35A | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTX1N5186 Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | - | SILICON | 1 | - | Bulk | - | Military, MIL-PRF-19500/424 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | - | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 2μA @ 100V | - | 1.5V @ 9A | ISOLATED | 3A | - | -65°C~175°C | 3A | - | - | - | - | 1.5V | 100V | 3A | - | - | 1 | 150 ns | 2μA | 100V | - | - | - | 80A | - | No | Non-RoHS Compliant | - | ||
 JAN1N5551 Microsemi Corporation | 1471 | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/420 | e0 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | GENERAL PURPOSE | HIGH RELIABILITY | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | MIL-19500 | Qualified | - | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 400V | - | 1.2V @ 9A | ISOLATED | 5A | - | -65°C~175°C | 3A | - | - | - | - | 1.2V | 400V | 3A | - | - | 1 | 2 μs | 1μA | 400V | - | - | - | 100A | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTXV1N5417 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | B, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | Military, MIL-PRF-19500/411 | e0 | - | Active | 1 (Unlimited) | 2 | - | Tin/Lead (Sn/Pb) | 175°C | -65°C | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | MIL-19500/411L | Qualified | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 200V | - | 1.5V @ 9A | ISOLATED | - | - | -65°C~175°C | 3A | - | - | - | - | 1.5V | 200V | 3A | - | - | 1 | 150 ns | 1μA | 200V | - | - | - | 80A | - | No | Non-RoHS Compliant | Contains Lead | ||
 JANTXV1N6662US Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | - | Surface Mount | Surface Mount | SQ-MELF, A | 2 | - | SILICON | 1 | - | Bulk | - | Military, MIL-PRF-19500/587 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 125°C | -55°C | - | - | 8541.10.00.70 | - | AXIAL | WIRE | - | - | - | - | - | MIL-19500/587 | Qualified | - | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 50nA @ 400V | - | 1V @ 400mA | ISOLATED | 500mA | - | -65°C~175°C | - | - | - | - | - | - | - | - | - | - | - | - | 50nA | 400V | DO-35 | - | - | 5A | - | No | Non-RoHS Compliant | - | ||
 JANTXV1N6639US Microsemi Corporation | In Stock | - | Datasheet | 12 Weeks | - | - | Surface Mount | - | MELF | 2 | - | SILICON | 1 | - | - | 1999 | - | e0 | no | Active | - | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | END | WRAP AROUND | - | - | - | - | 2 | MIL-19500/609D | Qualified | - | Single | - | RECTIFIER DIODE | - | - | - | ISOLATED | 300mA | - | - | 0.3A | - | - | - | - | 1.2V | - | - | - | - | - | 4 ns | 100nA | 75V | - | - | - | 2.5A | - | No | Non-RoHS Compliant | - | ||
 JAN1N649-1 Microsemi Corporation | In Stock | - | Datasheet | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Through Hole | Through Hole | DO-204AH, DO-35, Axial | 2 | - | SILICON | 1 | 1.5W | Bulk | 1997 | Military, MIL-PRF-19500/240 | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.50 | - | - | WIRE | - | - | - | - | 2 | MIL-19500 | Qualified | UNIDIRECTIONAL | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 50nA @ 600V | - | 1V @ 400mA | ISOLATED | 400mA | - | -65°C~175°C | - | - | 5.6V | - | - | 1V | - | - | - | 1% | - | - | 50nA | 600V | DO-41 | 45mA | - | 5A | - | No | Non-RoHS Compliant | - | ||
 DSB5820 Microsemi Corporation | In Stock | - | Datasheet | - | - | - | Through Hole | Through Hole | DO-204AL, DO-41, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | 125°C | -65°C | GENERAL PURPOSE | METALLURGICALLY BONDED | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | - | - | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100μA @ 20V | - | 500mV @ 3A | ISOLATED | 3A | - | -65°C~125°C | 3A | - | - | - | - | - | 20V | 3A | - | - | 1 | - | 100μA | 20V | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
DSB5821 Microsemi Corporation | In Stock | - | Datasheet | - | - | - | Through Hole | Through Hole | DO-204AL, DO-41, Axial | 2 | - | SILICON | 1 | - | Bulk | 1997 | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | TIN LEAD | 125°C | -65°C | GENERAL PURPOSE | METALLURGICALLY BONDED | 8541.10.00.80 | - | - | WIRE | - | - | - | - | 2 | - | - | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100μA @ 30V | - | 500mV @ 3A | ISOLATED | 3A | - | -65°C~125°C | 3A | - | - | - | - | - | 30V | 3A | - | - | 1 | - | 100μA | 30V | - | - | - | - | - | No | Non-RoHS Compliant | - | ||
 JAN1N5523BUR-1 Microsemi Corporation | In Stock | - | Datasheet | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | - | Surface Mount | - | - | 2 | - | SILICON | 1 | - | Bulk | - | - | e0 | no | Active | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | - | METALLURGICALLY BONDED | 8541.10.00.50 | 500mW | END | WRAP AROUND | - | - | - | - | 2 | MIL-19500 | Qualified | UNIDIRECTIONAL | Single | - | ZENER DIODE | - | 500mW | - | ISOLATED | - | 2μA | - | - | 5mA | 5.1V | - | - | - | - | - | 5.1V | 5% | - | - | - | - | - | - | - | - | 5% | No | Non-RoHS Compliant | - |