- Manufacturer Part Number
- Manufacturer
- Configuration
- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- Risk Rank
- Diode Type
- Number of Elements
- Surface Mount
- Diode Element Material
- JESD-30 Code
Attribute column
Manufacturer
Microsemi Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Diode Element Material | Number of Terminals | Forward Voltage-Max (VF) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Applications | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Polarity | Configuration | Diode Type | Case Connection | Output Current-Max | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Non-rep Peak Rev Power Dis-Max | Breakdown Voltage-Min | Reverse Recovery Time-Max | Breakdown Voltage-Max | Regulation Current-Nom (Ireg) | Limiting Voltage-Max |
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![]() JANTX1N5312-1 Microsemi | In Stock | - | - | NO | SILICON | 2 | - | MICROSEMI CORP | Microsemi Corporation | JANTX1N5312-1 | - | 1 | - | - | UNSPECIFIED | O-XALF-W2 | ROUND | LONG FORM | Active | - | 0.5 W | NOT SPECIFIED | 1.56 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | FIELD EFFECT | AXIAL | WIRE | NOT SPECIFIED | compliant | - | MIL-19500/463 | O-XALF-W2 | Qualified | - | SINGLE | CURRENT REGULATOR DIODE | ISOLATED | - | - | - | DO-35 | - | - | - | - | - | 3.9 mA | 2.6 V | ||
![]() JAN1N5302-1/TR Microsemi | In Stock | - | - | - | - | - | - | - | O-Z Gedney | ECGJH15015 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() JANS1N5313UR-1 Microsemi | In Stock | - | - | YES | SILICON | 2 | - | MICROSEMI CORP | - | JANS1N5313UR-1 | 1 | 1 | 175 °C | -65 °C | GLASS | HERMETIC SEALED, GLASS, LL41, MELF-2 | ROUND | LONG FORM | Active | DO-213AB | 0.5 W | NOT SPECIFIED | 5.25 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LELF-R2 | Qualified | - | SINGLE | CURRENT REGULATOR DIODE | ISOLATED | - | - | - | DO-213AB | - | - | - | - | - | 4.3 mA | 2.75 V | ||
![]() JAN1N5712UR-1 Microsemi | In Stock | - | - | YES | SILICON | 2 | - | MICROSEMI CORP | Microsemi Corporation | JAN1N5712UR-1 | 1 | 1 | - | - | GLASS | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 | ROUND | LONG FORM | Active | DO-213AA | - | NOT SPECIFIED | 5.32 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | SCHOTTKY | END | WRAP AROUND | NOT SPECIFIED | not_compliant | 2 | MIL-19500/444 | O-LELF-R2 | Qualified | - | SINGLE | RECTIFIER DIODE | ISOLATED | 0.075 A | - | - | DO-213AA | - | - | - | - | - | - | - | ||
![]() JANTX1N6630 Microsemi | In Stock | - | - | NO | SILICON | 2 | - | MICROSEMI CORP | Microsemi Corporation | JANTX1N6630 | - | 1 | - | - | GLASS | HERMETIC SEALED, GLASS, E, 2 PIN | ROUND | LONG FORM | Active | - | - | NOT SPECIFIED | 5.39 | No | e0 | No | - | TIN LEAD | ULTRA FAST RECOVERY | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | - | - | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500/590 | O-LALF-W2 | Not Qualified | - | SINGLE | RECTIFIER DIODE | ISOLATED | 1.4 A | 1 | - | - | 75 A | - | - | 0.06 µs | - | - | - | ||
![]() JAN1N3172 Microsemi | In Stock | - | - | NO | - | - | 1.9 V | POWEREX INC | Powerex Power Semiconductors | JAN1N3172 | - | 1 | 175 °C | - | - | - | - | - | Obsolete | - | - | - | 5.74 | - | - | - | - | - | - | - | - | Rectifier Diodes | - | - | - | - | unknown | - | - | - | - | - | SINGLE | RECTIFIER DIODE | - | 240 A | - | 800 V | - | 3000 A | - | - | - | - | - | - | ||
![]() JANTXV1N5302UR-1 Microsemi | In Stock | - | - | YES | SILICON | 2 | - | MICROSEMI CORP | Microsemi Corporation | JANTXV1N5302UR-1 | 1 | 1 | 175 °C | -65 °C | GLASS | HERMETIC SEALED, GLASS, LL41, MELF-2 | ROUND | LONG FORM | Active | DO-213AB | 0.5 W | NOT SPECIFIED | 4.97 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | FIELD EFFECT | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LELF-R2 | Qualified | - | SINGLE | CURRENT REGULATOR DIODE | ISOLATED | - | - | - | DO-213AB | - | - | - | - | - | 1.5 mA | 1.6 V | ||
![]() JANTXV1N5288UR-1 Microsemi | In Stock | - | - | YES | SILICON | 2 | - | MICROSEMI CORP | Microsemi Corporation | JANTXV1N5288UR-1 | 1 | 1 | 175 °C | -65 °C | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | DO-213AB | 0.5 W | NOT SPECIFIED | 5.37 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | FIELD EFFECT | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LELF-R2 | Qualified | - | SINGLE | CURRENT REGULATOR DIODE | ISOLATED | - | - | - | DO-213AB | - | - | - | - | - | 0.39 mA | 1.05 V | ||
![]() JANTXV1N5636A Microsemi | In Stock | - | - | NO | SILICON | 2 | - | MICROSEMI CORP | Microsemi Corporation | JANTXV1N5636A | - | 1 | - | - | METAL | O-MALF-W2 | ROUND | LONG FORM | Active | DO-13 | 1 W | NOT SPECIFIED | 5.26 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | - | 8541.10.00.50 | - | AVALANCHE | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-MALF-W2 | Qualified | UNIDIRECTIONAL | SINGLE | TRANS VOLTAGE SUPPRESSOR DIODE | CATHODE | - | - | 11.1 V | DO-202AA | - | 1500 W | 12.4 V | - | 13.7 V | - | - | ||
![]() JANS1N5554/TR Microsemi | In Stock | - | - | - | - | - | - | - | O-Z Gedney | ECGJH25012 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() JANTX1N6627U/TR Microsemi | In Stock | - | - | - | - | - | - | - | IDEC | LB7K-3ST3A-5H | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() JANS1N5304UR-1 Microsemi | In Stock | - | - | YES | SILICON | 2 | - | MICROSEMI CORP | - | JANS1N5304UR-1 | 1 | 1 | 175 °C | -65 °C | GLASS | HERMETIC SEALED, GLASS, LL41, MELF-2 | ROUND | LONG FORM | Active | DO-213AB | 0.5 W | NOT SPECIFIED | 5.29 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LELF-R2 | Qualified | - | SINGLE | CURRENT REGULATOR DIODE | ISOLATED | - | - | - | DO-213AB | - | - | - | - | - | 1.8 mA | 1.75 V | ||
![]() JANS1N5293UR-1 Microsemi | In Stock | - | - | YES | SILICON | 2 | - | MICROSEMI CORP | - | JANS1N5293UR-1 | 1 | 1 | 175 °C | -65 °C | GLASS | HERMETIC SEALED, GLASS, LL41, MELF-2 | ROUND | LONG FORM | Active | DO-213AB | 0.5 W | NOT SPECIFIED | 5.29 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LELF-R2 | Qualified | - | SINGLE | CURRENT REGULATOR DIODE | ISOLATED | - | - | - | DO-213AB | - | - | - | - | - | 0.68 mA | 1.15 V | ||
![]() JANS1N5306UR-1 Microsemi | In Stock | - | - | YES | SILICON | 2 | - | MICROSEMI CORP | - | JANS1N5306UR-1 | 1 | 1 | 175 °C | -65 °C | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | DO-213AB | 0.5 W | NOT SPECIFIED | 5.3 | No | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LELF-R2 | Qualified | - | SINGLE | CURRENT REGULATOR DIODE | ISOLATED | - | - | - | DO-213AB | - | - | - | - | - | 2.2 mA | 1.95 V | ||
![]() UES1305HR2 Microsemi | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() 1N5616USJANTX Microsemi | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() JANTXV1N5711UBCA Microsemi | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() 1N3743 Microsemi | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() 1N4594 Microsemi | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() JAN1N5822US Microsemi | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |