- Continuous Drain Current (ID)
- Drain to Source Voltage (Vdss)
- FET Feature
- FET Type
- Max Power Dissipation
- Moisture Sensitivity Level (MSL)
- Mount
- Operating Temperature
- Package / Case
- Packaging
- Part Status
- Rds On (Max) @ Id, Vgs
Attribute column
Manufacturer
Microsemi Transistors - FETs, MOSFETs - Arrays
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Lifecycle Status | Mount | Mounting Type | Package / Case | Number of Pins | Transistor Element Material | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Resistance | Terminal Finish | Additional Feature | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | FET Feature | Height | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 APTC60HM35T3G Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | SILICON | 4 | 283 ns | -40°C~150°C TJ | Bulk | 2012 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 416W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | - | 1 | Single | ENHANCEMENT MODE | 416W | ISOLATED | 21 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 20V | - | 600V | 200A | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | No | RoHS Compliant | - | ||
 APTM100A13SG Microsemi Corporation | In Stock | - | Datasheet | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 50 ns | -40°C~150°C TJ | Bulk | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | 156mOhm | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | 1 | Single | ENHANCEMENT MODE | 1.25kW | ISOLATED | 9 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 15200pF @ 25V | 562nC @ 10V | 9ns | 1000V 1kV | 24 ns | 65A | 30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 21.9mm | 108mm | 62mm | No | RoHS Compliant | Lead Free | ||
 APTC60DSKM24T3G Microsemi Corporation | In Stock | - | Datasheet | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | - | 2 | - | -40°C~150°C TJ | Tray | 2012 | CoolMOS™ | - | - | Active | 1 (Unlimited) | - | EAR99 | - | - | - | 462W | - | - | NOT SPECIFIED | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | 2 N Channel (Dual Buck Chopper) | - | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 14400pF @ 25V | 300nC @ 10V | - | 600V | - | 95A | 20V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Super Junction | - | - | - | - | RoHS Compliant | Lead Free | ||
 APTM10HM19FT3G Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | SILICON | 4 | 95 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | - | 1 | Single | ENHANCEMENT MODE | 208W | ISOLATED | 35 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 21m Ω @ 35A, 10V | 4V @ 1mA | 5100pF @ 25V | 200nC @ 10V | 70ns | 100V | 125 ns | 70A | 30V | - | 100V | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | No | RoHS Compliant | - | ||
 APTM50H14FT3G Microsemi Corporation | In Stock | - | Datasheet | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 32 | SILICON | 4 | 50 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | - | 1 | Single | ENHANCEMENT MODE | 208W | ISOLATED | 10 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 168m Ω @ 13A, 10V | 5V @ 1mA | 3259pF @ 25V | 72nC @ 10V | 17ns | 500V | 41 ns | 26A | 30V | - | - | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | No | RoHS Compliant | - | ||
 APTM50HM65FT3G Microsemi Corporation | In Stock | - | Datasheet | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP3 | 3 | SILICON | 4 | 75 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 25 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 390W | UPPER | UNSPECIFIED | - | - | 25 | R-XUFM-X25 | - | COMPLEX | - | - | ENHANCEMENT MODE | 390W | ISOLATED | 21 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 7000pF @ 25V | 140nC @ 10V | 38ns | 500V | 93 ns | 51A | 30V | 0.078Ohm | - | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | Lead Free | ||
 APTM20AM04FG Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 88 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | 1 | Single | ENHANCEMENT MODE | 1.25kW | ISOLATED | 32 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 5m Ω @ 186A, 10V | 5V @ 10mA | 28900pF @ 25V | 560nC @ 10V | 64ns | 200V | 116 ns | 372A | 30V | 0.005Ohm | - | - | - | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 21.9mm | 108mm | 62mm | No | RoHS Compliant | Lead Free | ||
 APTM10HM05FG Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 12 | SILICON | 4 | 280 ns | -40°C~150°C TJ | Bulk | 2012 | - | e1 | yes | Active | 1 (Unlimited) | 12 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 780W | UPPER | UNSPECIFIED | - | - | 12 | - | - | - | - | - | ENHANCEMENT MODE | 780W | ISOLATED | 80 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 5m Ω @ 125A, 10V | 4V @ 5mA | 20000pF @ 25V | 700nC @ 10V | 165ns | 100V | 135 ns | 278A | 30V | 0.005Ohm | - | 1100A | 100V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTC60TDUM35PG Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 6 | 283 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 21 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 416W | UPPER | UNSPECIFIED | - | - | 21 | R-XUFM-X21 | - | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 416W | ISOLATED | 21 ns | - | 6 N-Channel (3-Phase Bridge) | SWITCHING | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 20V | 0.035Ohm | - | 200A | - | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTC80AM75SCG Microsemi Corporation | In Stock | - | Datasheet | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 83 ns | -40°C~150°C TJ | Bulk | 1997 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 568W | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | - | - | ENHANCEMENT MODE | 568W | ISOLATED | 10 ns | - | 2 N-Channel (Half Bridge) | SWITCHING | 75m Ω @ 28A, 10V | 3.9V @ 4mA | 9015pF @ 25V | 364nC @ 10V | 13ns | 800V | 35 ns | 56A | 30V | 0.075Ohm | - | - | 800V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTM100AM90FG Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 155 ns | -40°C~150°C TJ | Bulk | 2006 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | R-XUFM-X7 | Not Qualified | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 18 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 105m Ω @ 39A, 10V | 5V @ 10mA | 20700pF @ 25V | 744nC @ 10V | 12ns | 1000V 1kV | 40 ns | 78A | 30V | 0.105Ohm | - | - | 1000V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | RoHS Compliant | Lead Free | ||
 APTM50HM75STG Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP4 | 4 | SILICON | 4 | 87 ns | -40°C~150°C TJ | Bulk | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 14 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 357W | UPPER | UNSPECIFIED | - | - | 14 | - | - | - | - | - | ENHANCEMENT MODE | 357W | ISOLATED | 18 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 5600pF @ 25V | 123nC @ 10V | 35ns | 500V | 77 ns | 46A | 30V | 0.09Ohm | - | - | 500V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTM10AM02FG Microsemi Corporation | In Stock | - | Datasheet | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 500 ns | -40°C~150°C TJ | Bulk | 2012 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 160 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 40000pF @ 25V | 1360nC @ 10V | 240ns | 100V | 160 ns | 495A | 30V | - | - | 1900A | 100V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTM60H23FT1G Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP1 | 1 | SILICON | 4 | 115 ns | -40°C~150°C TJ | Bulk | 2007 | - | - | - | Active | 1 (Unlimited) | 12 | EAR99 | - | - | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 12 | - | - | COMPLEX | - | - | ENHANCEMENT MODE | 208W | ISOLATED | 37 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 276m Ω @ 17A, 10V | 5V @ 1mA | 5316pF @ 25V | 165nC @ 10V | 43ns | 600V | 34 ns | 20A | 30V | 0.23Ohm | - | - | 600V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTM50H15FT1G Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP1 | 1 | SILICON | 4 | 80 ns | -40°C~150°C TJ | Bulk | 2007 | - | - | - | Active | 1 (Unlimited) | 12 | EAR99 | - | - | AVALANCHE RATED | 208W | UPPER | UNSPECIFIED | - | - | 12 | - | - | COMPLEX | - | - | ENHANCEMENT MODE | 208W | ISOLATED | 29 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 180m Ω @ 21A, 10V | 5V @ 1mA | 5448pF @ 25V | 170nC @ 10V | 35ns | 500V | 26 ns | 25A | 30V | - | - | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTC60AM35SCTG Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Chassis Mount | SP4 | 4 | SILICON | 2 | 283 ns | -40°C~150°C TJ | Bulk | - | - | e1 | yes | Active | 1 (Unlimited) | 10 | EAR99 | - | TIN SILVER COPPER | - | 416W | UPPER | UNSPECIFIED | - | - | 10 | R-XUFM-X10 | - | - | - | - | ENHANCEMENT MODE | 416W | ISOLATED | 21 ns | - | 2 N-Channel (Half Bridge) | SWITCHING | 35m Ω @ 36A, 10V | 3.9V @ 2mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 30V | 0.035Ohm | - | - | 600V | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTM120A15FG Microsemi Corporation | In Stock | - | Datasheet | 36 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 6 | SILICON | 2 | 160 ns | -40°C~150°C TJ | Bulk | - | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 1.25kW | UPPER | UNSPECIFIED | - | - | 7 | R-XUFM-X7 | - | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 20 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 175m Ω @ 30A, 10V | 5V @ 10mA | 20600pF @ 25V | 748nC @ 10V | 15ns | 1200V 1.2kV | 45 ns | 60A | 30V | 0.175Ohm | - | - | - | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTM50AM38STG Microsemi Corporation | In Stock | - | Datasheet | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP4 | 4 | SILICON | 2 | 87 ns | -40°C~150°C TJ | Bulk | - | - | e1 | yes | Active | 1 (Unlimited) | 10 | EAR99 | - | TIN SILVER COPPER | AVALANCHE ENERGY RATED | 694W | UPPER | UNSPECIFIED | - | - | 10 | R-XUFM-X10 | - | - | - | - | ENHANCEMENT MODE | 694W | ISOLATED | 18 ns | - | 2 N-Channel (Half Bridge) | SWITCHING | 45m Ω @ 45A, 10V | 5V @ 5mA | 11200pF @ 25V | 246nC @ 10V | 35ns | 500V | 77 ns | 90A | 30V | - | - | 360A | 500V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | - | ||
 APTM50AM24SG Microsemi Corporation | In Stock | - | Datasheet | 16 Weeks | - | Chassis Mount, Screw | Chassis Mount | SP6 | 7 | SILICON | 2 | 50 ns | -40°C~150°C TJ | Bulk | 1999 | - | e1 | yes | Active | 1 (Unlimited) | 7 | EAR99 | - | TIN SILVER COPPER | - | 1.25kW | UPPER | UNSPECIFIED | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 1.25kW | ISOLATED | 10 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 28m Ω @ 75A, 10V | 5V @ 6mA | 19600pF @ 25V | 434nC @ 10V | 17ns | 500V | 41 ns | 150A | 30V | - | - | 600A | 500V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | No | RoHS Compliant | Lead Free | ||
APTM100H45SCTG Microsemi Corporation | In Stock | - | Datasheet | 22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | Chassis Mount | SP4 | 4 | SILICON | 4 | 121 ns | -40°C~150°C TJ | Bulk | 1997 | POWER MOS 7® | e1 | yes | Active | 1 (Unlimited) | 14 | EAR99 | - | TIN SILVER COPPER | AVALANCHE RATED | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 14 | - | Not Qualified | - | - | - | ENHANCEMENT MODE | 357W | ISOLATED | 10 ns | - | 4 N-Channel (H-Bridge) | SWITCHING | 540m Ω @ 9A, 10V | 5V @ 2.5mA | 4350pF @ 25V | 154nC @ 10V | 12ns | 1000V 1kV | 35 ns | 18A | 30V | - | - | 72A | 1000V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | RoHS Compliant | - |