- Series
- Mfr
- Package
- Product Status
- Ihs Manufacturer
- JESD-30 Code
- Number of Terminals
- Operating Temperature-Max
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- Package Shape
- Package Style
Attribute column
Manufacturer
National Semiconductor Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | uPs/uCs/Peripheral ICs Type | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | External Data Bus Width | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Data Polling | Toggle Bit | Command User Interface | Number of External Interrupts | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Reverse Pinout | Length | Width |
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 SN74S189N National Semiconductor Corporation | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NM95MS16VBHX National Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NM29N16S National Semiconductor | In Stock | - | - | YES | 40 | 48 ns | - | NATIONAL SEMICONDUCTOR CORP | National Semiconductor Corporation | NM29N16S | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP40/44,.46,32 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | NOT SPECIFIED | 5.86 | - | No | - | - | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | 100K WRITE/ERASE ENDURANCE MIN. | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | - | R-PDSO-G40 | Not Qualified | 5.25 V | 5 V | COMMERCIAL | 4.75 V | ASYNCHRONOUS | - | 0.07 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.0001 A | 16777216 bit | PARALLEL | - | - | FLASH | 5 V | - | 100000 Write/Erase Cycles | - | - | - | NO | NO | YES | - | 512 | 4K | 256 words | YES | - | 18.41 mm | 10.16 mm | ||
NS32202D10 National Semiconductor | In Stock | - | - | NO | 40 | - | - | NATIONAL SEMICONDUCTOR CORP | National Semiconductor Corporation | NS32202D-10 | - | - | 70 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP40,.6 | DIP40,.6 | RECTANGULAR | IN-LINE | Obsolete | - | NOT SPECIFIED | 8.8 | Non-Compliant | No | 5.25 V | 4.75 V | 5 V | - | e0 | - | - | Tin/Lead (Sn/Pb) | - | - | Interrupt Controllers | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | - | 2.54 mm | unknown | - | R-CDIP-T40 | Not Qualified | - | 5 V | COMMERCIAL | - | - | INTERRUPT CONTROLLER | 300 mA | - | - | 5.08 mm | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | - | - | 16 | - | - | - | - | - | - | 15.24 mm | ||
NM27C040Q150 National Semiconductor | In Stock | - | - | NO | 32 | 150 ns | - | NATIONAL SEMICONDUCTOR CORP | National Semiconductor Corporation | NM27C040Q150 | 524288 words | 512000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | WINDOWED, CERAMIC, DIP-32 | DIP32,.6 | RECTANGULAR | IN-LINE, WINDOW | Transferred | - | - | 5.32 | Non-Compliant | No | - | - | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | R-GDIP-T32 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | - | 0.03 mA | 512KX8 | 3-STATE | 5.969 mm | 8 | 0.0001 A | 4194304 bit | PARALLEL | COMMON | - | UVPROM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 15.24 mm | ||
NM29F030V National Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NM27LC512N200 National Semiconductor | In Stock | - | - | NO | 28 | 200 ns | - | NATIONAL SEMICONDUCTOR CORP | National Semiconductor Corporation | NM27LC512N200 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | - | NOT SPECIFIED | 5.4 | Non-Compliant | No | - | - | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.71 | OTP ROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | - | R-PDIP-T28 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | - | 0.015 mA | 64KX8 | 3-STATE | 5.334 mm | 8 | 0.0001 A | 524288 bit | PARALLEL | COMMON | - | OTP ROM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 35.725 mm | 15.24 mm | ||
NM93CS06N National Semiconductor | In Stock | - | - | NO | 8 | - | 1 MHz | NATIONAL SEMICONDUCTOR CORP | Texas | NM93CS06N | 16 words | 16 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Transferred | - | - | 5.83 | Non-Compliant | No | - | - | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | 40 YEARS DATA RETENTION; MICROWIRE BUS INTERFACE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | R-PDIP-T8 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | - | 0.001 mA | 16X16 | 3-STATE | 5.08 mm | 16 | 0.00005 A | 256 bit | SERIAL | - | - | EEPROM | - | MICROWIRE | 1000000 Write/Erase Cycles | 10 ms | 40 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 9.817 mm | 7.62 mm | ||
NM27C210VE150 National Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NS32008D-10 National Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NM93C56EM National Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NM27C210Q-150 National Semiconductor | In Stock | - | - | NO | 40 | 150 ns | - | NATIONAL SEMICONDUCTOR CORP | Texas | NM27C210Q150 | 65536 words | 64000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | WDIP, DIP40,.6 | DIP40,.6 | RECTANGULAR | IN-LINE, WINDOW | Transferred | DIP | - | 5.26 | Non-Compliant | No | - | - | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.61 | EPROMs | CMOS | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | 40 | R-GDIP-T40 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | - | 0.05 mA | 64KX16 | 3-STATE | 5.969 mm | 16 | 0.0001 A | 1048576 bit | PARALLEL | COMMON | - | UVPROM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 15.24 mm | ||
NM93CS06M8 National Semiconductor | In Stock | - | - | YES | 8 | - | 1 MHz | FAIRCHILD SEMICONDUCTOR CORP | Fairchild Semiconductor Corporation | NM93CS06M8 | 16 words | 16 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.7 | Non-Compliant | No | - | - | - | 5 V | e0 | No | EAR99 | Tin/Lead (Sn/Pb) | DATA RETENTION=40 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | - | 0.001 mA | 16X16 | - | 1.75 mm | 16 | 0.00005 A | 256 bit | SERIAL | - | - | EEPROM | - | MICROWIRE | 1000000 Write/Erase Cycles | 10 ms | 40 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
NS32032E-10J National Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NM29N16R National Semiconductor | In Stock | - | - | YES | 40 | 48 ns | - | NATIONAL SEMICONDUCTOR CORP | National Semiconductor Corporation | NM29N16R | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP2-R | TSOP2-R, TSOP40/44,.46,32 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | NOT SPECIFIED | 5.91 | - | No | - | - | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | 100K WRITE/ERASE ENDURANCE MIN. | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | - | R-PDSO-G40 | Not Qualified | 5.25 V | 5 V | COMMERCIAL | 4.75 V | ASYNCHRONOUS | - | 0.07 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.0001 A | 16777216 bit | PARALLEL | - | - | FLASH | 5 V | - | 100000 Write/Erase Cycles | - | - | - | NO | NO | YES | - | 512 | 4K | 256 words | YES | YES | 18.41 mm | 10.16 mm |