- Operating Temperature
- Package / Case
- Mounting Type
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Rds On (Max) @ Id, Vgs
- FET Feature
- Packaging
- FET Type
- Part Status
- Factory Lead Time
Attribute column
Manufacturer
Nexperia Transistors - FETs, MOSFETs - Arrays
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Input Capacitance | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | FET Feature | Drain to Source Resistance | Rds On Max | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 2N7002BKS,115 Nexperia USA Inc. | 5875 | - | Datasheet | 4 Weeks | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | - | - | SILICON | 300mA | 2 | - | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | EAR99 | - | Tin (Sn) | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | - | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 295mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 50pF @ 10V | 0.6nC @ 4.5V | - | 60V | - | - | - | - | - | - | 0.3A | - | - | - | - | 60V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | ROHS3 Compliant | - | ||
BSS138PS,115 Nexperia USA Inc. | 3474 | - | Datasheet | 4 Weeks | Tin | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | - | SILICON | - | 2 | 9 ns | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | - | - | - | LOGIC LEVEL COMPATIBLE | - | 420mW | - | GULL WING | 260 | 30 | 6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 280mW | - | 2 ns | 420mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 300mA, 10V | 1.5V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 3ns | - | - | 4 ns | 320mA | 1.2V | 20V | 60V | 0.32A | - | 60V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
PMGD290UCEAX Nexperia USA Inc. | 32589 | - | Datasheet | 4 Weeks | Tin | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | - | 725mA 500mA | - | 80 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | 280mW | - | - | - | - | 6 | - | - | - | 2 | Dual | - | - | - | 18 ns | - | N and P-Channel | - | 380m Ω @ 500mA, 4.5V | 1.3V @ 250μA | 83pF @ 10V | 0.68nC @ 4.5V | 30ns | - | - | 72 ns | 500mA | - | 8V | - | - | - | 20V | - | - | - | - | - | Logic Level Gate | - | - | No | - | ROHS3 Compliant | - | ||
 2N7002PV,115 Nexperia USA Inc. | 92000 | - | Datasheet | 4 Weeks | Tin | - | Surface Mount | SOT-563, SOT-666 | YES | 6 | - | SILICON | - | 2 | 10 ns | 150°C TJ | Tape & Reel (TR) | 2010 | - | e3 | Active | 1 (Unlimited) | 6 | - | - | - | - | - | LOGIC LEVEL COMPATIBLE | - | 330mW | - | FLAT | - | - | 6 | - | - | - | - | - | ENHANCEMENT MODE | 390mW | - | 3 ns | 330mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 4ns | - | - | 5 ns | 350mA | - | 20V | 60V | 0.35A | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | - | ROHS3 Compliant | Lead Free | ||
PMGD780SN,115 Nexperia USA Inc. | 10 |
| Datasheet | 4 Weeks | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | EAR99 | - | Tin (Sn) | - | - | - | 8541.29.00.75 | - | - | GULL WING | 260 | 30 | 6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 410mW | - | - | 410mW | 2 N-Channel (Dual) | SWITCHING | 920m Ω @ 300mA, 10V | 2.5V @ 250μA | 23pF @ 30V | 1.05nC @ 10V | - | 60V | - | - | 490mA | - | - | - | 0.49A | 0.92Ohm | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | No SVHC | ROHS3 Compliant | - | ||
BSS138BKS,115 Nexperia USA Inc. | 2995 | - | Datasheet | 4 Weeks | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | - | - | SILICON | 320mA | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | GULL WING | - | - | 6 | - | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 445mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 320mA, 10V | 1.6V @ 250μA | 56pF @ 10V | 0.7nC @ 4.5V | - | 60V | - | - | - | - | - | - | 0.32A | - | - | - | - | 60V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | ROHS3 Compliant | - | ||
 PMDXB600UNEZ Nexperia USA Inc. | 433 | - | Datasheet | 4 Weeks | - | - | Surface Mount | 6-XFDFN Exposed Pad | YES | 6 | - | SILICON | - | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | TrenchFET® | e3 | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | - | - | 265mW | - | - | - | - | 6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | 5.6 ns | 265mW | 2 N-Channel (Dual) | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 21.3pF @ 10V | 0.7nC @ 4.5V | 9.2ns | - | - | 51 ns | 600mA | - | 8V | 20V | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | - | ROHS3 Compliant | Lead Free | ||
NX1029X,115 Nexperia USA Inc. | 7097 | - | Datasheet | 4 Weeks | - | - | Surface Mount | SOT-563, SOT-666 | - | 6 | - | - | 330mA 170mA | 2 | 48 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | - | - | - | Tin (Sn) | - | - | - | - | 500mW | - | - | - | - | 6 | - | - | - | - | - | - | 500mW | - | - | - | N and P-Channel | - | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | 11ns | 60V 50V | - | 25 ns | 170mA | - | 20V | - | - | - | -50V | - | - | - | - | - | Logic Level Gate | - | - | No | - | ROHS3 Compliant | Lead Free | ||
 BUK9K6R8-40EX Nexperia USA Inc. | 3000 |
| Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | - | 8 | - | SILICON | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | 64W | - | GULL WING | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 64W | 2 N-Channel (Dual) | SWITCHING | 6.1m Ω @ 10A, 10V | 2.1V @ 1mA | 3000pF @ 25V | 22.2nC @ 5V | - | 40V | - | - | 40A | - | - | - | - | 0.0072Ohm | - | 265A | - | 40V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | ROHS3 Compliant | - | ||
BSS84AKS,115 Nexperia USA Inc. | 20 | - | Datasheet | 4 Weeks | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | - | SILICON | 160mA | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | GULL WING | 260 | 30 | 6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 445mW | 2 P-Channel (Dual) | SWITCHING | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | - | 50V | - | - | - | - | - | - | - | 8.5Ohm | - | - | - | 50V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | ROHS3 Compliant | - | ||
2N7002PS,115 Nexperia USA Inc. | 2515 | - | Datasheet | 4 Weeks | Tin | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | - | SILICON | - | 2 | 10 ns | 150°C TJ | Cut Tape (CT) | 2010 | - | e3 | Active | 1 (Unlimited) | 6 | - | 1.6Ohm | - | - | - | LOGIC LEVEL COMPATIBLE | - | 420mW | - | GULL WING | - | - | 6 | - | - | - | - | Dual | ENHANCEMENT MODE | 320mW | - | 3 ns | 420mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 4ns | - | - | 4 ns | 320mA | - | 20V | 60V | - | - | 60V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | - | ROHS3 Compliant | Lead Free | ||
BUK7K8R7-40EX Nexperia USA Inc. | 34 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | - | 8 | - | SILICON | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | 53W | - | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 53W | 2 N-Channel (Dual) | SWITCHING | 8.5m Ω @ 15A, 10V | 4V @ 1mA | 1439pF @ 25V | 21.8nC @ 10V | - | 40V | - | - | 30A | - | - | - | - | - | - | 225A | - | 40V | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | ROHS3 Compliant | - | ||
PMCXB900UEZ Nexperia USA Inc. | 400 |
| Datasheet | 4 Weeks | - | - | Surface Mount | 6-XFDFN Exposed Pad | YES | 6 | - | SILICON | 600mA 500mA | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | TrenchFET® | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | 265mW | DUAL | - | - | - | 6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | N and P-Channel Complementary | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 21.3pF @ 10V | 0.7nC @ 4.5V | - | 20V | N-CHANNEL AND P-CHANNEL | - | 500mA | - | 8V | - | - | - | - | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | - | ROHS3 Compliant | - | ||
BSS84AKV,115 Nexperia USA Inc. | 12000 | - | Datasheet | 4 Weeks | Tin | - | Surface Mount | SOT-563, SOT-666 | YES | 6 | - | SILICON | - | 2 | 48 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | - | - | - | - | - | LOGIC LEVEL COMPATIBLE | - | 500mW | - | FLAT | - | - | 6 | - | - | - | - | - | ENHANCEMENT MODE | 330mW | - | 13 ns | - | 2 P-Channel (Dual) | SWITCHING | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | 11ns | 50V | - | 25 ns | 170mA | - | 20V | -50V | 0.17A | 8.5Ohm | -50V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | - | ROHS3 Compliant | Lead Free | ||
NX3020NAKS,115 Nexperia USA Inc. | 100 | - | Datasheet | 4 Weeks | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | - | SILICON | - | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | - | - | 375mW | - | GULL WING | - | - | 6 | - | - | - | 2 | Dual | ENHANCEMENT MODE | 375mW | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 13pF @ 10V | 0.44nC @ 4.5V | 5ns | - | - | 17 ns | 180mA | - | 20V | 30V | 0.18A | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | - | ROHS3 Compliant | Lead Free | ||
BUK9K25-40EX Nexperia USA Inc. | 15000 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | - | 8 | LFPAK56D | - | 18.2A | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | TrenchMOS™ | - | Active | 1 (Unlimited) | - | - | - | - | 175°C | -55°C | - | - | 32W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32W | 2 N-Channel (Dual) | - | 24mOhm @ 5A, 10V | 2.1V @ 1mA | 701pF @ 25V | 6.3nC @ 5V | - | 40V | - | - | 18.2A | - | - | - | - | - | - | - | 701pF | - | - | - | Logic Level Gate | 19mOhm | 24 mΩ | - | - | ROHS3 Compliant | - | ||
NX7002AKS,115 Nexperia USA Inc. | 3000 | - | Datasheet | 4 Weeks | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | 6-TSSOP | - | 170mA | - | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | - | Active | 1 (Unlimited) | - | - | - | - | 150°C | -55°C | - | - | 220mW | - | - | - | - | - | - | - | - | 2 | Dual | - | - | - | 6 ns | 220mW | 2 N-Channel (Dual) | - | 4.5Ohm @ 100mA, 10V | 2.1V @ 250μA | 17pF @ 10V | 0.43nC @ 4.5V | 7ns | 60V | - | 14 ns | 170mA | - | 1.6V | 60V | - | - | 60V | - | 17pF | - | - | - | Logic Level Gate | 3Ohm | 4.5 Ω | No | - | ROHS3 Compliant | - | ||
BUK7K25-40E,115 Nexperia USA Inc. | 233 | - | Datasheet | 12 Weeks | - | - | Surface Mount | SOT-1205, 8-LFPAK56 | YES | 8 | - | SILICON | - | 2 | 8.3 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | AVALANCHE RATED | - | 32W | - | GULL WING | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | 2 | Dual | ENHANCEMENT MODE | 32W | DRAIN | 4.4 ns | - | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 5A, 10V | 4V @ 1mA | 525pF @ 25V | 7.9nC @ 10V | 4.5ns | - | - | 5.2 ns | 27A | - | 20V | 40V | - | - | 40V | 107A | - | - | 10 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | No | - | ROHS3 Compliant | - | ||
BUK9K17-60EX Nexperia USA Inc. | 120000 | - | Datasheet | 12 Weeks | - | Surface Mount | Surface Mount | SOT-1205, 8-LFPAK56 | - | 8 | - | SILICON | - | 2 | - | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | 53W | - | GULL WING | - | - | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 53W | 2 N-Channel (Dual) | SWITCHING | 15.6m Ω @ 10A, 10V | 2.1V @ 1mA | 2223pF @ 25V | 16.5nC @ 5V | - | 60V | - | - | 26A | - | - | - | - | 0.017Ohm | - | - | - | 60V | 64 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | ROHS3 Compliant | - | ||
 PMDPB58UPE,115 Nexperia USA Inc. | 297821 |
| Datasheet | 8 Weeks | - | - | Surface Mount | 6-UDFN Exposed Pad | YES | 6 | - | SILICON | - | 2 | 41 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | - | - | 515mW | - | - | - | - | 6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | 7 ns | - | 2 P-Channel (Dual) | SWITCHING | 67m Ω @ 2A, 4.5V | 950mV @ 250μA | 804pF @ 10V | 9.5nC @ 4.5V | 15ns | 20V | - | 14 ns | 3.6A | - | 8V | -20V | - | - | - | 14.4A | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | No | - | ROHS3 Compliant | - |