- Manufacturer
- Manufacturer Part Number
- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- Risk Rank
- Drain to Source Voltage (Vdss)
- Number of Elements
- Package Description
- ECCN Code
- Current - Continuous Drain (Id) @ 25℃
- FET Feature
Attribute column
Manufacturer
NTE ELECT Transistors - FETs, MOSFETs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Number of Terminals | Transistor Element Material | Channel Mode | Continuous Drain Current | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Drain-Source On-Volt | Drive Voltage (Max Rds On, Min Rds On) | Gate-Source Voltage (Max) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Mounting | Number of Elements | Operating Temp Range | Operating Temperature Classification | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Turn Off Delay Time | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Operating Temperature | Series | ECCN Code | Type | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Polarity | Configuration | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Polarity/Channel Type | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | FET Feature | Drain to Source Resistance | Nominal Vgs | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Power Gain-Min (Gp) | Height | Length | Width | REACH SVHC |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NTE2392 NTE Electronics, Inc. | In Stock | - | - | Through Hole | Through Hole | TO-204AA, TO-3 | NO | 2 | TO-3 | 72.574779 g | 2 | SILICON | Enhancement | 40(A) | 40A (Tc) | 40 A | 100(V) | 10V | ±20(V) | NTE ELECTRONICS INC | NTE Electronics | NTE2392 | NTE Electronics, Inc | Through Hole | 1 | -55C to 150C | Military | - | Bag | METAL | FLANGE MOUNT, O-MBFM-P2 | ROUND | FLANGE MOUNT | TO-3 | Active | TO-204AA | 150W (Tc) | Active | No | NOT SPECIFIED | 1.6 | Non-Compliant | Yes | 125 ns | 225 ns | 135 ns | -55°C ~ 150°C (TJ) | - | EAR99 | Power MOSFET | 150 °C | -55 °C | - | - | FET General Purpose Power | 150 W | MOSFET (Metal Oxide) | BOTTOM | PIN/PEG | NOT SPECIFIED | unknown | 2 +Tab | O-MBFM-P2 | Not Qualified | N | SINGLE WITH BUILT-IN DIODE | Single | ENHANCEMENT MODE | 150 W | DRAIN | 35 ns | N-Channel | SWITCHING | 55mOhm @ 20A, 10V | 4V @ 250µA | 3000 pF @ 25 V | 120 nC @ 10 V | 100 V | ±20V | N-CHANNEL | 40 A | 4 V | TO-3 | 20 V | 32 A | 0.055 Ω | 100 V | 160 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 125 W | - | 55 mΩ | 4 V | - | - | 150 W | - | 8.89 mm | 152.4 mm | 22.1996 mm | Unknown | ||
NTE2980 NTE Electronics, Inc. | In Stock | - | - | - | - | - | NO | - | - | - | 3 | SILICON | - | - | - | 7.7 A | - | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE2980 | - | - | 1 | - | - | 150 °C | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | - | Active | - | - | - | - | NOT SPECIFIED | 5.74 | - | Yes | - | - | - | - | - | EAR99 | - | - | - | - | - | FET General Purpose Power | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | 7.7 A | 0.2 Ω | - | 31 A | 60 V | 47 mJ | METAL-OXIDE SEMICONDUCTOR | 25 W | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2393 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-3P-3, SC-65-3 | NO | - | TO-3P | - | 3 | SILICON | - | - | 10A (Tc) | 9 A | - | 10V | - | NTE ELECTRONICS INC | NTE Electronics | NTE2393 | NTE Electronics, Inc | - | 1 | - | - | - | Bag | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | - | Active | - | 125W (Tc) | Active | - | NOT SPECIFIED | 2.13 | - | Yes | - | - | - | 150°C (TJ) | - | EAR99 | - | - | - | - | - | FET General Purpose Power | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | N-Channel | SWITCHING | 670mOhm @ 5A, 10V | 4V @ 1mA | - | - | 500 V | ±20V | N-CHANNEL | - | - | - | - | 9 A | 0.7 Ω | - | 36 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | - | - | - | - | - | - | - | - | ||
NTE454 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-72-3 | NO | - | TO-72 | - | 4 | SILICON | - | - | 60mA | 0.06 A | - | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE454 | NTE Electronics, Inc | - | 1 | - | - | - | Bag | METAL | CYLINDRICAL, O-MBCY-W4 | ROUND | CYLINDRICAL | - | Active | - | 1.2W | Active | - | NOT SPECIFIED | 2.12 | - | Yes | - | - | - | -65°C ~ 175°C (TJ) | - | - | - | - | - | - | 8541.21.00.75 | FET General Purpose Power | - | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | - | O-MBCY-W4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | DUAL GATE, DEPLETION MODE | - | SOURCE | - | N-Channel | AMPLIFIER | - | - | 3300 pF @ 15 V | - | 20 V | - | N-CHANNEL | - | - | TO-72 | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.36 W | Standard | - | - | 0.03 pF | ULTRA HIGH FREQUENCY BAND | - | 15 dB | - | - | - | - | ||
NTE2988 NTE Electronics, Inc. | In Stock | - | - | - | - | - | NO | - | - | - | 3 | SILICON | - | - | - | 0.2 A | - | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE2988 | - | - | 1 | - | - | - | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | - | Active | - | - | - | - | - | 5.75 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | BOTTOM | WIRE | - | unknown | - | O-PBCY-W3 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | TO-52 | - | - | 5 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 5 pF | - | - | - | - | - | - | - | ||
NTE490 NTE Electronics, Inc. | In Stock | - | - | - | Through Hole | Axial | NO | - | Axial | - | 3 | SILICON | - | - | 500mA (Tj) | 0.5 A | - | 10V | - | NTE ELECTRONICS INC | NTE Electronics | NTE490 | NTE Electronics, Inc | - | 1 | - | - | - | Bag | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | - | Active | - | 350mW (Ta) | Active | - | NOT SPECIFIED | 5.71 | - | Yes | - | - | - | -55°C ~ 150°C (TJ) | - | EAR99 | - | - | - | - | 8541.21.00.95 | FET General Purpose Power | - | MOSFET (Metal Oxide) | BOTTOM | WIRE | NOT SPECIFIED | compliant | - | O-PBCY-W3 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | N-Channel | SWITCHING | 5Ohm @ 200mA, 10V | 3V @ 1mA | 60 pF @ 10 V | - | 60 V | ±20V | N-CHANNEL | - | - | - | - | 0.5 A | 5 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.83 W | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2372 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-220-3 | - | - | TO-220 | - | - | - | - | - | 3.5A (Tc) | - | - | 10V | - | - | NTE Electronics | NTE2372 | NTE Electronics, Inc | - | - | - | - | - | Bag | - | - | - | - | - | - | - | 40W (Tc) | Active | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | P-Channel | - | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 350 pF @ 25 V | 22 nC @ 10 V | 200 V | ±20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2388 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-220-3 | NO | - | TO-220 | - | 3 | SILICON | - | - | 18A (Tc) | 18 A | - | 10V | - | NTE ELECTRONICS INC | NTE Electronics | NTE2388 | NTE Electronics, Inc | - | 1 | - | - | - | Bag | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | - | Active | TO-220AB | 125W (Tc) | Active | - | NOT SPECIFIED | 1.56 | - | Yes | - | 140 ns | 90 ns | -55°C ~ 150°C (TJ) | - | EAR99 | - | - | - | - | - | FET General Purpose Power | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | - | N-Channel | SWITCHING | 180mOhm @ 10A, 10V | 4V @ 250μA | 1600 pF @ 25 V | 60 nC @ 10 V | 200 V | ±20V | N-CHANNEL | - | - | TO-220AB | - | 18 A | 0.18 Ω | - | 72 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | - | 125 W | - | - | - | - | - | ||
NTE67 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-220-3 | NO | - | TO-220 | - | 3 | SILICON | Enhancement | 4.5(A) | 4.5A (Tc) | 4.5 A | 400(V) | 10V | ±20(V) | NTE ELECTRONICS INC | NTE Electronics | NTE67 | NTE Electronics, Inc | Through Hole | 1 | -55C to 150C | Military | - | Bag | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | TO-220 | Active | TO-220AB | 75W (Tc) | Active | No | NOT SPECIFIED | 1.59 | - | Yes | - | 90 ns | - | -55°C ~ 150°C (TJ) | - | EAR99 | Power MOSFET | - | - | HIGH RELIABILITY | 8541.29.00.95 | FET General Purpose Power | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 +Tab | R-PSFM-T3 | Not Qualified | N | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | 75(W) | DRAIN | - | N-Channel | SWITCHING | 1.5Ohm @ 3A, 10V | 4V @ 250μA | 780 pF @ 25 V | 30 nC @ 10 V | 400 V | ±20V | N-CHANNEL | - | - | TO-220AB | - | 5.5 A | 1.5 Ω | - | 18 A | 400 V | 290 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | - | - | 75 W | - | - | - | - | - | ||
NTE2397 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-220-3 | NO | - | TO-220 | - | 3 | SILICON | Enhancement | 10(A) | 10A (Tc) | 10 A | 400(V) | 10V | ±20(V) | NTE ELECTRONICS INC | NTE Electronics | NTE2397 | NTE Electronics, Inc | Through Hole | 1 | -55C to 150C | Military | - | Bag | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | TO-220 | Active | - | 125W (Tc) | Active | No | NOT SPECIFIED | 2.11 | - | Yes | - | - | - | -55°C ~ 150°C (TJ) | - | EAR99 | Power MOSFET | - | - | AVALANCHE RATED | - | FET General Purpose Power | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 +Tab | R-PSFM-T3 | Not Qualified | N | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | 125(W) | DRAIN | - | N-Channel | SWITCHING | 550mOhm @ 6A, 10V | 4V @ 250μA | 1400 pF @ 25 V | 63 nC @ 10 V | 400 V | ±20V | N-CHANNEL | - | - | - | - | 10 A | 0.55 Ω | - | 40 A | 400 V | 520 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2379 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-220-3 | NO | - | TO-220 | - | 3 | SILICON | Enhancement | 6.2(A) | 6.2A (Tc) | 6.2 A | 600(V) | 10V | ±20(V) | NTE ELECTRONICS INC | NTE Electronics | NTE2379 | NTE Electronics, Inc | Through Hole | 1 | -55C to 150C | Military | 150 °C | Bag | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | TO-220 | Active | - | 125W (Tc) | Active | No | NOT SPECIFIED | 2.3 | - | Yes | - | - | - | -55°C ~ 150°C (TJ) | - | EAR99 | Power MOSFET | - | - | - | - | FET General Purpose Powers | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 +Tab | R-PSFM-T3 | Not Qualified | N | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | 125(W) | DRAIN | - | N-Channel | SWITCHING | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 1300 pF @ 25 V | 60 nC @ 10 V | 600 V | ±20V | N-CHANNEL | - | - | - | - | 6.2 A | 1.2 Ω | - | 25 A | 600 V | 570 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | - | - | - | - | - | - | - | ||
NTE222 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-206AF, TO-72-4 Metal Can | NO | - | TO-72 | - | 4 | SILICON | - | 0.05(A) | 50mA (Tj) | 0.05 A | 25(V) | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE222 | NTE Electronics, Inc | Through Hole | 1 | -65C to 175C | Military | - | Bag | METAL | CYLINDRICAL, O-MBCY-W4 | ROUND | CYLINDRICAL | TO-72 | Active | - | 360mW (Ta), 1.2mW (Tc) | Active | No | NOT SPECIFIED | 2.11 | - | Yes | - | - | - | -65°C ~ 175°C (TJ) | - | EAR99 | Small Signal | - | - | - | 8541.21.00.95 | FET General Purpose Power | - | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | 4 | O-MBCY-W4 | Not Qualified | N | SINGLE | - | DUAL GATE, DEPLETION MODE | 0.36(W) | SOURCE | - | N-Channel | AMPLIFIER | - | 4V @ 20μA | 3300 pF @ 15 V | - | 25 V | - | N-CHANNEL | - | - | TO-72 | - | - | - | - | - | 25 V | - | METAL-OXIDE SEMICONDUCTOR | 0.33 W | - | - | - | 0.03 pF | VERY HIGH FREQUENCY BAND | - | 14 dB | - | - | - | - | ||
NTE2396A NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-220-3 | - | - | TO-220 | - | - | - | - | - | 33A (Tc) | - | - | 10V | - | NTE ELECTRONICS INC | NTE Electronics | NTE2396A | NTE Electronics, Inc | - | - | - | - | - | Bag | - | , | - | - | - | Active | - | 130W (Tc) | Active | - | NOT SPECIFIED | 5.7 | - | Yes | - | - | - | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | unknown | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 44mOhm @ 16A, 10V | 4V @ 250μA | 1960 pF @ 25 V | 71 nC @ 10 V | 100 V | ±20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2374 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-220-3 | NO | - | TO-220 | - | 3 | SILICON | Enhancement | 18(A) | 18A (Tc) | 18 A | 200(V) | 10V | ±20(V) | NTE ELECTRONICS INC | NTE Electronics | NTE2374 | NTE Electronics, Inc | Through Hole | 1 | -55C to 150C | Military | - | Bag | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | TO-220 | Active | - | 125W (Tc) | Active | No | NOT SPECIFIED | 2.1 | - | Yes | - | - | - | -55°C ~ 150°C (TJ) | - | EAR99 | Power MOSFET | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 +Tab | R-PSFM-T3 | Not Qualified | N | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | 125(W) | DRAIN | - | N-Channel | SWITCHING | 180mOhm @ 31A, 10V | 4V @ 250μA | 1300 pF @ 25 V | 70 nC @ 10 V | 200 V | ±20V | N-CHANNEL | - | - | - | - | - | 0.18 Ω | - | 72 A | 200 V | 580 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2992 NTE Electronics, Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE2992 | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | 2.14 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2940 NTE Electronics, Inc. | In Stock | - | - | - | - | - | NO | - | - | - | 3 | SILICON | - | - | - | 15 A | - | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE2940 | - | - | 1 | - | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | - | Active | TO-220AB | - | - | - | NOT SPECIFIED | 2.15 | - | Yes | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | TO-220AB | - | - | 0.1 Ω | - | 60 A | 60 V | 9.5 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2954 NTE Electronics, Inc. | In Stock | - | - | - | - | - | NO | - | - | - | 3 | SILICON | - | - | - | 70 A | - | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE2954 | - | - | 1 | - | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | NOT SPECIFIED | 5.75 | - | Yes | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | 0.018 Ω | - | 280 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | ||
NTE2943 NTE Electronics, Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NTE Electronics | NTE2943 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NTE491 NTE Electronics, Inc | In Stock | - | - | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | NO | - | TO-92 | - | 3 | SILICON | Enhancement | 0.2(A) | 200mA (Ta) | 0.2 A | 60(V) | 4.5V, 10V | ±20(V) | NTE ELECTRONICS INC | NTE Electronics | NTE491 | NTE Electronics, Inc | Through Hole | 1 | -55C to 150C | Military | - | Bag | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | TO-92 | Active | - | 350mW (Ta) | Active | No | NOT SPECIFIED | 2.14 | - | Yes | - | - | - | -55°C ~ 150°C (TJ) | - | EAR99 | Small Signal | - | - | - | 8541.21.00.95 | - | - | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | 3 | O-PBCY-W3 | Not Qualified | N | SINGLE | - | ENHANCEMENT MODE | 0.35(W) | - | - | N-Channel | SWITCHING | 5Ohm @ 500mA, 10V | 3V @ 1mA | 50 pF @ 25 V | - | 60 V | ±20V | N-CHANNEL | - | - | - | - | - | 5 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 25 pF | - | - | - | - | - | - | - | ||
NTE2986 NTE Electronics, Inc. | In Stock | - | - | - | - | - | NO | - | - | - | 3 | SILICON | - | - | - | 50 A | - | - | - | NTE ELECTRONICS INC | NTE Electronics | NTE2986 | - | - | 1 | - | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | NOT SPECIFIED | 5.75 | - | Yes | - | - | - | - | - | EAR99 | - | - | - | FAST SWITCHING | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | - | DRAIN | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | 0.028 Ω | - | 200 A | 60 V | 110 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - |