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  • Manufacturer
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  • JESD-30 Code
  • Memory Density
  • Memory IC Type

Attribute column

Manufacturer

NTE ELECT Memory

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7 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Surface Mount

Number of Pins

Supplier Device Package

Dielectric Material

Weight

Number of Terminals

Access Time-Max

Address Bus

Clock Freq

Ihs Manufacturer

Lead Free Status / RoHS Status

Manufacturer

Manufacturer Part Number

Mfr

Mounting

Number of I/O Lines

Number of Words

Number of Words Code

Operating Supply Voltage (Max)

Operating Supply Voltage (Min)

Operating Supply Voltage (Typ)

Operating Temp Range

Operating Temperature Classification

Operating Temperature-Max

Package

Package Body Material

Package Code

Package Description

Package Equivalence Code

Package Shape

Package Style

Package Type

Part Life Cycle Code

Part Package Code

Product Status

Rad Hardened

Reflow Temperature-Max (s)

Risk Rank

RoHS

Rohs Code

Supply Voltage-Nom (Vsup)

Voltage Rating DC

Operating Temperature

Packaging

Series

Size / Dimension

Tolerance

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Termination

ECCN Code

Type

Terminal Finish

Applications

Additional Feature

HTS Code

Capacitance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Terminal Pitch

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Lead Spacing

Supply Voltage-Max (Vsup)

Power Supplies

Temperature Grade

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Operating Mode

Power Line Protection

Supply Current-Max

Voltage - Breakdown (Min)

Power - Peak Pulse

Current - Peak Pulse (10/1000μs)

Access Time

Voltage - Clamping (Max) @ Ipp

Architecture

Voltage - Reverse Standoff (Typ)

Organization

Output Characteristics

Seated Height-Max

Unidirectional Channels

Memory Width

Density

Standby Current-Max

Memory Density

Capacitance @ Frequency

Access Time (Max)

Parallel/Serial

I/O Type

Sync/Async

Word Size

Memory IC Type

Standby Voltage-Min

Access Mode

Features

Supply Current

Height

Height Seated (Max)

Length

Width

Ratings

NTE4256
NTE4256

NTE Electronics, Inc.

In Stock

-

-

-

-

-

-

-

-

-

-

-

-

-

NTE ELECTRONICS INC

-

NTE Electronics

NTE4256

-

-

-

-

-

-

-

-

-

-

-

-

-

-

,

-

-

-

-

Active

-

-

-

-

5.68

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

unknown

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTE2114
NTE2114

NTE Electronics, Inc.

In Stock

-

-

-

-

NO

-

-

-

-

18

300 ns

10(b)

Not Required(MHz)

NTE ELECTRONICS INC

-

NTE Electronics

NTE2114

-

Through Hole

4

1K

1000

5.5(V)

4.5(V)

5(V)

0C to 70C

Commercial

70 °C

-

PLASTIC/EPOXY

DIP

DIP, DIP18,.3

DIP18,.3

RECTANGULAR

IN-LINE

PDIP

Active

DIP

-

No

NOT SPECIFIED

2.34

-

Yes

5 V

-

-

-

-

-

-

e0

-

-

-

EAR99

-

Tin/Lead (Sn/Pb)

-

-

8542.32.00.41

-

SRAMs

NMOS

DUAL

THROUGH-HOLE

NOT SPECIFIED

1

2.54 mm

unknown

18

R-PDIP-T18

Not Qualified

-

5.25 V

5 V

COMMERCIAL

4.75 V

-

1

ASYNCHRONOUS

-

0.1 mA

-

-

-

300

-

Not Required

-

1KX4

3-STATE

-

-

4

4096(Bit)

0.1 A

4096 bit

-

-

PARALLEL

COMMON

Asynchronous

4(b)

STANDARD SRAM

5 V

-

-

100

-

-

-

-

-

NTE6508
NTE6508

NTE ELECT

In Stock

-

-

-

-

-

-

-

-

-

-

-

10(b)

Not Required(MHz)

-

-

NTE Electronics

NTE6508

-

Through Hole

1

1K

-

5.5(V)

4.5(V)

5(V)

-40C to 85C

Industrial

-

-

-

-

-

-

-

-

PDIP

-

-

-

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

16

-

-

-

-

-

-

-

-

1

-

-

-

-

-

-

300

-

Not Required

-

-

-

-

-

-

1024(Bit)

-

-

-

-

-

-

Asynchronous

1(b)

-

-

-

-

4

-

-

-

-

-

NTE65101
NTE65101

NTE ELECT

In Stock

-

-

Through Hole

Radial

NO

-

-

Polypropylene (PP), Metallized

-

22

450 ns

-

-

NTE ELECTRONICS INC

--

NTE Electronics

NTE65101

-

-

-

256 words

256

-

-

-

-

-

70 °C

-

PLASTIC/EPOXY

DIP

DIP, DIP22,.4

DIP22,.4

RECTANGULAR

IN-LINE

-

Active

DIP

-

-

-

2.32

-

No

5 V

2500V (2.5kV)

-55°C ~ 110°C

Bulk

MKP385

1.693 L x 0.846 W (43.00mm x 21.50mm)

±5%

e0

Active

--

PC Pins

EAR99

-

Tin/Lead (Sn/Pb)

DC Link, DC Filtering; High Frequency, Switching; High Pulse, DV/DT

-

8542.32.00.41

0.2µF

SRAMs

CMOS

DUAL

THROUGH-HOLE

-

1

2.54 mm

unknown

22

R-PDIP-T22

Not Qualified

1.476 (37.50mm)

5.25 V

5 V

COMMERCIAL

4.75 V

-

-

ASYNCHRONOUS

-

0.027 mA

-

-

-

-

-

-

-

256X4

3-STATE

-

-

4

-

0.00001 A

1024 bit

-

-

PARALLEL

SEPARATE

-

-

STANDARD SRAM

2 V

-

--

-

-

1.516 (38.50mm)

-

-

--

NTE4164
NTE4164

NTE ELECT

In Stock

-

-

Through Hole

DO-201AA, DO-27, Axial

NO

-

CASE-1

-

-

16

150 ns

-

-

NTE ELECTRONICS INC

-

NTE Electronics

NTE4164

Microchip Technology

-

-

65536 words

64000

-

-

-

-

-

70 °C

Tape & Reel (TR)

PLASTIC/EPOXY

DIP

DIP,

-

RECTANGULAR

IN-LINE

-

Active

-

Active

-

-

2.1

-

-

5 V

-

-65°C ~ 150°C (TJ)

-

Military, MIL-PRF-19500

-

-

-

-

-

-

-

Zener

-

General Purpose

RAS ONLY REFRESH

-

-

-

NMOS

DUAL

THROUGH-HOLE

-

1

2.54 mm

unknown

-

R-PDIP-T16

-

-

5.5 V

-

COMMERCIAL

4.5 V

-

1

ASYNCHRONOUS

No

-

209V

1500W (1.5kW)

4.6A

-

328V

-

185V

64KX1

-

5.08 mm

1

1

-

-

65536 bit

-

-

-

-

-

-

PAGE MODE DRAM

-

PAGE

-

-

-

-

22 mm

7.62 mm

-

NTE2117
NTE2117

NTE Electronics, Inc.

In Stock

-

-

-

-

NO

-

-

-

-

16

200 ns

7(b)

-

NTE ELECTRONICS INC

-

NTE Electronics

NTE2117

-

Through Hole

-

16384 words

16000

5.5(V)

4.5(V)

5(V)

0C to 70C

Commercial

70 °C

-

PLASTIC/EPOXY

DIP

DIP,

-

RECTANGULAR

IN-LINE

DIP

Active

DIP

-

No

-

2.12

-

-

12 V

-

-

-

-

-

-

-

-

-

-

EAR99

DRAM

-

-

RAS ONLY REFRESH

8542.32.00.02

-

-

MOS

DUAL

THROUGH-HOLE

-

1

2.54 mm

unknown

16

R-PDIP-T16

-

-

13.2 V

-

COMMERCIAL

10.8 V

-

1

ASYNCHRONOUS

-

-

-

-

-

-

-

-

-

16KX1

-

5.08 mm

-

1

16384(Bit)

-

16384 bit

-

200(ns)

-

-

-

-

PAGE MODE DRAM

-

PAGE

-

35(mA)

-

-

-

7.62 mm

-

NTE2104
NTE2104

NTE Electronics, Inc.

In Stock

-

-

-

-

-

16

-

-

72.574779 g

-

-

-

-

-

-

NTE Electronics

NTE2104

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.9 kB

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

12.7 mm

-

152.4 mm

76.2 mm

-