- Diode Type
- Surface Mount
- Ihs Manufacturer
- Manufacturer
- Manufacturer Part Number
- Part Life Cycle Code
- Reach Compliance Code
- Risk Rank
- Rohs Code
- Configuration
- Number of Elements
- JESD-609 Code
Attribute column
Manufacturer
NXP Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Pins | Diode Element Material | Number of Terminals | Forward Voltage-Max (VF) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reference Voltage-Nom | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Series | JESD-609 Code | Pbfree Code | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Polarity | Configuration | Element Configuration | Diode Type | Case Connection | Forward Current | Output Current-Max | Forward Voltage | Max Reverse Voltage (DC) | Voltage Tol-Max | Reverse Recovery Time | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Working Test Current | Non-rep Pk Forward Current-Max | Non-rep Peak Rev Power Dis-Max | Reverse Current-Max | Max Forward Surge Current (Ifsm) | Dynamic Impedance-Max | Breakdown Voltage-Min | Reverse Recovery Time-Max | Breakdown Voltage-Max | REACH SVHC |
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![]() PMEG3010EB/S500115 NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | NXP USA Inc. | - | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() MMBZ6V8AL NXP USA Inc. | 3000 | - | - | YES | - | SILICON | 3 | - | NEXPERIA | Nexperia | MMBZ6V8AL | - | 1 | 2 | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.29 W | - | - | NOT SPECIFIED | 5.53 | - | Yes | - | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | IEC-61643-321 | 8541.10.00.50 | - | - | AVALANCHE | DUAL | GULL WING | NOT SPECIFIED | compliant | - | AEC-Q101; IEC-60134; IEC-61000-4-2 | R-PDSO-G3 | - | UNIDIRECTIONAL | COMMON ANODE, 2 ELEMENTS | - | TRANS VOLTAGE SUPPRESSOR DIODE | - | - | - | - | - | - | - | - | 4.5 V | TO-236AB | - | - | 24 W | - | - | - | 6.46 V | - | 7.14 V | - | ||
![]() BAS70-06W NXP USA Inc. | 490 | - | - | YES | - | SILICON | 3 | 0.41 V | NXP SEMICONDUCTORS | NXP Semiconductors | BAS70-06W | - | 1 | 2 | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-70 | - | - | - | 30 | 5.24 | - | Yes | - | - | e3 | Yes | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.70 | Rectifier Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | 3 | - | R-PDSO-G3 | Not Qualified | - | COMMON ANODE, 2 ELEMENTS | - | RECTIFIER DIODE | - | - | 0.07 A | - | - | - | - | - | 70 V | - | - | 0.1 A | - | - | - | - | - | - | - | - | ||
![]() BZD27-C6V2 NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() BZV55C75 NXP USA Inc. | 20000 | - | - | YES | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BZV55-C75 | - | - | 1 | 200 °C | - | - | - | - | - | - | Transferred | - | 0.5 W | - | 75 V | - | 5.74 | - | Yes | - | - | e3 | - | - | - | Matte Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | ZENER DIODE | - | - | - | - | - | 5% | - | - | - | - | 2 mA | - | - | - | - | 255 Ω | - | - | - | - | ||
![]() BAS70-04W NXP USA Inc. | 2968 | - | - | YES | - | SILICON | 3 | 0.41 V | NXP SEMICONDUCTORS | NXP Semiconductors | BAS70-04W | - | 1 | 2 | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC, SMD, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-70 | - | - | - | 30 | 7.27 | - | Yes | - | - | e3 | Yes | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.70 | Rectifier Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | 3 | - | R-PDSO-G3 | Not Qualified | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | RECTIFIER DIODE | - | - | 0.07 A | - | - | - | - | - | 70 V | - | - | 0.1 A | - | - | - | - | - | - | - | - | ||
![]() MMBZ15VDL NXP USA Inc. | 36545 | - | - | YES | - | SILICON | 3 | - | NEXPERIA | Nexperia | MMBZ15VDL | - | 1 | 1 | - | - | - | PLASTIC/EPOXY | PLASTIC, SMD, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 30 | 5.57 | - | Yes | - | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.50 | - | - | AVALANCHE | DUAL | GULL WING | 260 | compliant | - | - | R-PDSO-G3 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | TRANS VOLTAGE SUPPRESSOR DIODE | - | - | - | - | - | - | - | - | - | TO-236AB | - | - | - | - | - | - | - | - | - | - | ||
![]() BAS16J NXP USA Inc. | 236 | - | - | YES | - | SILICON | 2 | - | NEXPERIA | Nexperia | BAS16J | - | 1 | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | SC-90, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | 0.55 W | - | - | 30 | 1.19 | - | Yes | NXP BAS16J Switching Diode, 250mA 100V, 2-Pin SOD-323F | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.70 | - | - | - | DUAL | FLAT | 260 | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-F2 | - | - | SINGLE | - | RECTIFIER DIODE | - | - | 0.25 A | - | - | - | - | - | 100 V | - | - | - | - | - | - | - | - | 0.004 µs | - | - | ||
![]() PMEG2010EPAS115 NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | NXP USA Inc. | - | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() PTVS24VS1UR NXP USA Inc. | 80 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() PMEG6002EB NXP USA Inc. | 9000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() BAS16W NXP USA Inc. | 3000 | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | SMD/SMT | - | - | 150 °C | -65 °C | - | - | - | 200 mW | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | 175 mA | - | 1.25 V | 75 V | - | 4 ns | 85 V | - | - | - | - | - | - | 4 A | - | - | - | - | No SVHC | ||
![]() BZV55-C3V0 NXP USA Inc. | 400 | - | - | YES | - | SILICON | 2 | - | NXP SEMICONDUCTORS | NXP Semiconductors | BZV55-C3V0 | - | 1 | 1 | 200 °C | -65 °C | - | GLASS | HERMETIC SEALED, GLASS PACKAGE-2 | ROUND | LONG FORM | Transferred | - | 0.4 W | - | 3 V | 40 | 3.78 | - | Yes | - | - | e3 | Yes | - | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | ZENER | END | WRAP AROUND | 260 | compliant | 2 | - | O-LELF-R2 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | ZENER DIODE | ISOLATED | - | - | - | - | 5% | - | - | - | - | 5 mA | - | - | 10 µA | - | 95 Ω | - | - | - | - | ||
![]() PMBD7000 NXP USA Inc. | 1978 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() BAS70-05 NXP USA Inc. | 12000 | - | - | YES | - | SILICON | 3 | 0.41 V | NXP SEMICONDUCTORS | NXP Semiconductors | BAS70-05 | - | 1 | 2 | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC, SMD, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | - | - | 30 | 3.21 | - | Yes | - | - | e3 | Yes | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.70 | Rectifier Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | 3 | - | R-PDSO-G3 | Not Qualified | - | COMMON CATHODE, 2 ELEMENTS | - | RECTIFIER DIODE | - | - | 0.07 A | - | - | - | - | - | 70 V | TO-236AB | - | 0.1 A | - | - | - | - | - | - | - | - | ||
![]() PMEG2002AESFB,315 NXP Semiconductors | In Stock | - | - | - | - | - | - | - | - | - | - | NXP Semiconductors | - | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() BYV40E/200 NXP USA Inc. | In Stock | - | - | YES | - | - | - | 1 V | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BYV40E-200 | - | - | - | 150 °C | - | - | - | - | - | - | Transferred | - | - | - | - | - | 5.77 | - | No | - | - | e0 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | Rectifier Diodes | - | - | - | - | - | unknown | - | - | - | - | - | - | - | RECTIFIER DIODE | - | - | 1.5 A | - | - | - | - | - | 200 V | - | - | 6.6 A | - | - | - | - | - | - | - | - | ||
![]() PESD3V3S1UB NXP USA Inc. | 6000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() PESD12VL1BA NXP USA Inc. | 12000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
![]() PMEG10020ELR NXP USA Inc. | 5243 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |