- Diode Type
- Surface Mount
- Ihs Manufacturer
- Manufacturer
- Manufacturer Part Number
- Part Life Cycle Code
- Reach Compliance Code
- Risk Rank
- Rohs Code
- Configuration
- Number of Elements
- JESD-609 Code
Attribute column
Manufacturer
NXP Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Diode Element Material | Number of Terminals | Base Product Number | Breakdown Voltage / V | Forward Voltage-Max (VF) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature (Max.) | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reference Voltage-Nom | Reflow Temperature-Max (s) | Reverse Stand-off Voltage | Risk Rank | RoHS | Rohs Code | Samacsys Description | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Capacitance | Subcategory | Power Rating | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Polarity | Configuration | Voltage | Element Configuration | Speed | Current | Diode Type | Current - Reverse Leakage @ Vr | Power Dissipation | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Clamping Voltage | Operating Temperature - Junction | Output Current-Max | Peak Pulse Power | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Zener Voltage | Voltage Tol-Max | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Working Test Current | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Reverse Voltage | Max Breakdown Voltage | Reverse Current-Max | Max Forward Surge Current (Ifsm) | Dynamic Impedance-Max | Max Junction Temperature (Tj) | Reverse Recovery Time-Max | Ambient Temperature Range High | Reverse Test Voltage | Min Breakdown Voltage | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 BAS321 NXP USA Inc. | 21000 | - | - | - | - | - | YES | - | SILICON | 2 | - | - | 1 V | NXP SEMICONDUCTORS | NXP Semiconductors | BAS321 | - | 1 | 1 | - | 150 °C | - | - | PLASTIC/EPOXY | R-PDSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | SC-76 | 0.3 W | - | - | 30 | - | 3.9 | - | Yes | - | - | - | - | e3 | Yes | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.70 | - | Rectifier Diodes | - | - | DUAL | GULL WING | 260 | compliant | - | 2 | - | R-PDSO-G2 | Not Qualified | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | 0.25 A | - | - | - | - | - | - | - | - | - | 250 V | - | - | - | - | 9 A | - | - | - | - | - | - | 0.05 µs | - | - | - | - | - | - | - | - | - | ||
PESD1CAN NXP USA Inc. | 3261 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BAW56W NXP USA Inc. | 18000 | - | - | Surface Mount | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -65 °C | - | - | 2 pF | - | 200 mW | - | - | - | - | - | - | - | - | - | - | - | - | 75 V | Common Anode | - | 15 A | - | - | - | - | - | 150 mA | - | - | - | - | - | - | 1.25 V | - | - | 4 ns | 500 nA | 90 V | - | - | - | - | - | - | 80 V | - | - | 500 mA | - | 150 °C | - | 150 °C | - | - | 1 mm | 2.2 mm | 1.35 mm | - | No SVHC | - | ||
PMEG3005AEA NXP USA Inc. | 3000 | - | - | Surface Mount | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | Cut Tape | - | - | - | - | - | - | - | - | - | 150 °C | -65 °C | - | - | 55 pF | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | - | 500 mA | - | - | - | - | - | - | 430 mV | - | - | - | 150 µA | 30 V | - | - | - | - | - | - | 30 V | - | - | 10 A | - | 150 °C | - | 150 °C | - | - | 1.05 mm | 1.8 mm | 1.35 mm | - | No SVHC | - | ||
1PS75SB45 NXP USA Inc. | 9000 | - | - | Surface Mount | - | - | YES | 3 | SILICON | 3 | - | - | 1 V | NXP SEMICONDUCTORS | NXP Semiconductors | 1PS75SB45 | - | 1 | 2 | - | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC, SC-75, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-75 | - | - | - | 30 | - | 5.59 | Compliant | Yes | - | Cut Tape | - | - | e3 | Yes | - | - | - | EAR99 | Tin (Sn) | 150 °C | -65 °C | LOW LEAKAGE CURRENT | 8541.10.00.70 | - | Rectifier Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | - | 3 | - | R-PDSO-G3 | Not Qualified | - | COMMON CATHODE, 2 ELEMENTS | - | Common Cathode | - | - | RECTIFIER DIODE | - | - | - | - | 120 mA | - | - | 0.12 A | - | - | - | 1 V | - | - | - | 10 µA | 40 V | 40 V | - | - | - | - | 0.2 A | - | - | - | 200 mA | - | - | - | - | - | - | 850 µm | 1.8 mm | 900 µm | - | No SVHC | - | ||
BAT54C NXP USA Inc. | 300000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BAS85 NXP USA Inc. | 265000 | - | - | - | - | - | YES | - | SILICON | 2 | - | - | - | NEXPERIA | Nexperia | BAS85 | - | 1 | 1 | - | 125 °C | - | - | GLASS | - | ROUND | LONG FORM | Active | - | - | - | - | 30 | - | 5.2 | - | Yes | - | - | - | - | e3 | - | - | - | - | - | Tin (Sn) | - | - | ULTRA HIGH SPEED SWITCH | - | - | - | - | SCHOTTKY | END | WRAP AROUND | 260 | compliant | - | - | - | O-LELF-R2 | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | - | - | ISOLATED | - | - | - | 0.2 A | - | - | - | - | - | - | - | - | - | 30 V | - | - | - | - | - | - | - | - | - | - | - | 0.004 µs | - | - | - | - | - | - | - | - | - | ||
PMEG6020ETR NXP USA Inc. | 1500 | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | Cut Tape | - | - | - | - | - | - | - | - | - | 175 °C | -55 °C | - | - | 240 pF | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | - | 2 A | - | - | - | - | - | - | 530 mV | - | - | 8.5 ns | 60 µA | 60 V | - | - | - | - | - | - | 60 V | - | - | 50 A | - | 175 °C | - | 175 °C | - | - | 1.1 mm | - | - | - | No SVHC | - | ||
BAT46WH NXP USA Inc. | In Stock | - | - | - | - | - | YES | - | SILICON | 2 | - | - | - | NXP SEMICONDUCTORS | NXP Semiconductors | BAT46WH | - | 1 | 1 | - | - | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.44 W | - | - | 30 | - | 5.33 | - | Yes | - | - | - | - | e3 | - | - | - | - | EAR99 | TIN | - | - | - | 8541.10.00.70 | - | - | - | SCHOTTKY | DUAL | FLAT | 260 | unknown | - | 2 | - | R-PDSO-F2 | Not Qualified | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | 0.25 A | - | - | - | - | - | - | - | - | - | 100 V | - | - | - | - | - | - | - | - | - | - | - | 0.0059 µs | - | - | - | - | - | - | - | - | - | ||
BAS40-04 NXP USA Inc. | 60000 | - | - | - | - | - | YES | - | SILICON | 3 | - | - | 0.38 V | NXP SEMICONDUCTORS | NXP Semiconductors | BAS40-04 | - | 1 | 2 | - | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | - | - | 30 | - | 3.03 | - | Yes | - | - | - | - | e3 | Yes | - | - | - | EAR99 | Tin (Sn) | - | - | LOW LEAKAGE CURRENT | 8541.10.00.70 | - | Rectifier Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | - | 3 | - | R-PDSO-G3 | Not Qualified | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | 0.12 A | - | - | - | - | - | - | - | - | - | 40 V | TO-236AB | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
 BAW62,133 NXP USA Inc. | In Stock | - | Datasheet | - | Through Hole | DO-204AH, DO-35, Axial | NO | - | SILICON | - | - | - | - | - | - | - | - | - | 1 | 200°C | - | - | - | - | - | - | - | - | - | 0.35W | - | - | - | - | - | - | - | - | Tape & Box (TB) | 2009 | - | e3 | - | Active | 1 (Unlimited) | 2 | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.80 | - | - | - | - | - | WIRE | - | - | BAW62 | 2 | - | O-LALF-W2 | - | - | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | - | Standard | 5μA @ 75V | - | 1V @ 100mA | ISOLATED | - | - | 200°C Max | 0.25A | - | 75V | 250mA DC | - | - | - | 4ns | - | - | 75V | - | - | 2pF @ 0V 1MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
PBYR10100X,127 NXP USA Inc. | In Stock | - | - | Through Hole | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -65 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | - | 10 A | - | - | - | - | - | - | - | - | - | - | 150 µA | 100 V | - | - | - | - | 150 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | - | - | ||
PTVS20VP1UP NXP USA Inc. | In Stock | - | - | - | - | - | - | 2 | - | - | - | 22.2 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 V | - | Compliant | - | - | Cut Tape | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Unidirectional | - | - | - | - | - | - | - | - | - | - | - | 32.4 V | - | - | 600 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 24.5 V | - | - | - | - | - | - | - | 22.2 V | - | - | - | - | No SVHC | - | ||
BZT03C18 NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BAV70S NXP USA Inc. | 20400 | - | - | - | - | - | YES | - | - | - | - | - | 1.3 V | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BAV70S | - | - | - | - | 150 °C | -65 °C | - | - | - | - | - | Transferred | - | 0.35 W | - | - | - | - | 8.5 | - | Yes | - | - | - | - | e3 | - | - | - | - | EAR99 | Matte Tin (Sn) | - | - | - | - | - | Signal Diodes | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 85 V | - | - | - | - | - | - | - | 2.5 µA | - | - | - | 0.004 µs | - | 75 V | - | - | - | - | - | - | - | ||
BAT54J NXP USA Inc. | 1730 | - | - | Surface Mount | - | - | - | 2 | - | - | BAT54 | - | - | - | - | - | NXP USA Inc. | - | - | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | - | - | Compliant | - | - | - | - | * | - | - | - | - | - | - | - | 125 °C | -65 °C | - | - | 10 pF | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 30 V | Single | - | 2 A | - | - | - | - | - | 200 mA | - | - | - | - | - | - | - | - | - | - | 2 µA | 30 V | - | - | - | - | - | - | 30 V | - | - | 600 mA | - | 150 °C | - | 150 °C | - | - | 800 µm | 1.8 mm | 1.35 mm | - | - | - | ||
1PS76SB21 NXP USA Inc. | 18000 | - | - | - | - | - | YES | - | SILICON | 2 | - | - | - | NEXPERIA | Nexperia | 1PS76SB21 | - | 1 | 1 | - | 125 °C | - | - | PLASTIC/EPOXY | PLASTIC, SC-76, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 30 | - | 5.38 | - | Yes | NXP 1PS76SB21, SMT Schottky Diode, 40V 200mA, 2-Pin SOD-323 | - | - | - | e3 | - | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.70 | - | - | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | - | - | - | R-PDSO-G2 | Not Qualified | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | 0.2 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PDZ6.2B NXP USA Inc. | 3000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 400 mW | - | - | 200 mA | - | - | - | - | - | - | - | 6.195 V | - | - | - | - | - | - | - | - | - | - | 3 V | - | - | - | - | 150 °C | - | - | - | - | 1.1 mm | - | - | - | - | - | ||
BZX585-B15 NXP USA Inc. | 6000 | - | - | - | - | - | YES | - | SILICON | 2 | - | - | - | NEXPERIA | Nexperia | BZX585-B15 | - | 1 | 1 | - | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-F2 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.3 W | - | 15 V | 30 | - | 5.44 | - | Yes | - | - | - | - | e3 | - | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.50 | - | - | - | ZENER | DUAL | FLAT | 260 | compliant | - | - | AEC-Q101; IEC-60134 | R-PDSO-F2 | - | UNIDIRECTIONAL | SINGLE | - | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | - | - | - | 2% | - | - | - | - | - | 5 mA | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZX585-C12 NXP USA Inc. | 112000 | - | - | - | - | - | YES | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BZX585-C12 | - | - | 1 | - | 150 °C | - | - | - | - | - | - | Transferred | - | 0.3 W | - | 12 V | - | - | 5.75 | - | Yes | - | - | - | - | e3 | - | - | - | - | EAR99 | Matte Tin (Sn) | - | - | - | 8541.10.00.50 | - | Voltage Reference Diodes | - | - | - | - | - | unknown | - | - | - | - | - | - | SINGLE | - | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | - | - | - | 5% | - | - | - | - | - | 5 mA | - | - | - | - | - | - | - | 150 Ω | - | - | - | - | - | - | - | - | - | - | - |