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Manufacturer
NXP Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Diode Element Material | Number of Terminals | Base Product Number | Forward Voltage-Max (VF) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature (Max.) | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Reverse Stand-off Voltage | Risk Rank | RoHS | Rohs Code | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Capacitance | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Working Voltage | Polarity | Configuration | Leakage Current | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Power Dissipation | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Max Reverse Leakage Current | Clamping Voltage | Peak Pulse Current | Operating Temperature - Junction | Max Surge Current | Output Current-Max | Peak Pulse Power | Direction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Reverse Voltage | Non-rep Peak Rev Power Dis-Max | ESD Protection | Reverse Current-Max | Max Forward Surge Current (Ifsm) | Recovery Time | Voltage - Peak Reverse (Max) | Reverse Recovery Time-Max | Reverse Test Voltage | Source Url Status Check Date | Reverse Recovery Time (trr) | Diode Capacitance-Nom | Capacitance Ratio | Capacitance Ratio Condition | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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 RGP15D NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0 m | 0 m | 0 m | - | - | - | - | ||
BYV32E-200 NXP USA Inc. | 300 | - | - | - | - | - | - | - | NO | - | - | - | - | - | - | 1.1 V | PHILIPS SEMICONDUCTORS | Philips Semiconductors | - | BYV32E-200 | - | - | - | - | 150 °C | - | - | - | - | - | - | Transferred | - | - | - | - | - | 3.86 | - | Yes | - | - | - | e3 | - | - | - | - | Matte Tin (Sn) | - | - | - | - | - | - | Rectifier Diodes | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | - | - | - | 18 A | - | - | - | - | - | - | - | - | - | - | - | 200 V | - | - | - | 137 A | - | - | - | - | - | - | - | 0.04 µs | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BB153 NXP USA Inc. | 150000 | - | - | - | - | - | - | - | YES | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | - | BB153 | - | - | - | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | 5.71 | - | Yes | - | - | - | e3 | - | - | - | EAR99 | Matte Tin (Sn) | - | - | - | - | - | - | Varactors | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | VARIABLE CAPACITANCE DIODE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 32 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 42.35 pF | - | - | - | - | - | - | - | - | - | ||
BAS45A NXP USA Inc. | 110664 | - | - | - | - | - | - | - | NO | - | - | - | SILICON | 2 | - | - | NEXPERIA | Nexperia | - | BAS45A | - | 1 | 1 | - | 175 °C | - | - | GLASS | HERMETIC SEALED, GLASS PACKAGE-2 | ROUND | LONG FORM | Active | - | 0.3 W | - | 30 | - | 5.19 | - | Yes | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | - | LOW LEAKAGE CURRENT | 8541.10.00.70 | - | - | - | - | AXIAL | WIRE | 260 | - | compliant | - | - | - | O-LALF-W2 | Not Qualified | - | - | - | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | ISOLATED | - | - | - | - | - | - | 0.25 A | - | - | - | - | - | - | - | - | - | - | - | 125 V | DO-34 | - | - | - | - | - | - | - | - | - | - | 1.5 µs | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
1PS70SB14 NXP USA Inc. | 500 | - | - | - | - | - | - | - | YES | - | - | - | SILICON | 3 | - | 0.8 V | NXP SEMICONDUCTORS | NXP Semiconductors | - | 1PS70SB14 | - | 1 | 2 | - | 125 °C | - | - | PLASTIC/EPOXY | PLASTIC, SC-70, 3-PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-70 | 0.2 W | - | 30 | - | 5.42 | - | Yes | - | - | - | e3 | Yes | - | - | EAR99 | Tin (Sn) | - | - | - | HIGH SPEED SWITCH | 8541.10.00.70 | - | Rectifier Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | - | compliant | - | 3 | - | R-PDSO-G3 | Not Qualified | - | - | - | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | - | - | - | 0.2 A | - | - | - | - | - | - | - | - | - | - | - | 30 V | - | - | - | 0.6 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
 BAS116T,115 NXP USA Inc. | In Stock | - | Datasheet | - | - | - | Surface Mount | SC-75, SOT-416 | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | 150°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | e3 | - | Obsolete | 1 (Unlimited) | - | Tin (Sn) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | BAS116 | 3 | - | - | - | - | - | - | - | SINGLE | - | - | Standard Recovery >500ns, > 200mA (Io) | Standard | 5nA @ 75V | - | 1.25V @ 150mA | - | - | - | - | - | 150°C Max | - | 0.215A | - | - | 75V | 215mA DC | - | - | - | - | 3μs | - | - | 85V | - | 2pF @ 0V 1MHz | - | 4A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
BAT54T,115 NXP USA Inc. | In Stock | - | Datasheet | - | - | - | Surface Mount | SC-75, SOT-416 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | BAT54T | 3 | - | - | - | - | - | - | - | - | - | - | Small Signal =< 200mA (Io), Any Speed | Schottky | 2μA @ 25V | - | 800mV @ 100mA | - | - | - | - | - | 150°C Max | - | - | - | - | 30V | 200mA DC | - | - | - | - | 5ns | - | - | - | - | 10pF @ 1V 1MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
BYT79-500,127 NXP USA Inc. | In Stock | - | - | - | Tin | Through Hole | - | - | NO | 2 | - | 4.535924 g | SILICON | 2 | BYT79 | 1.4 V | NXP SEMICONDUCTORS | NXP Semiconductors | SOD59 | BYT79-500,127 | NXP USA Inc. | - | 1 | - | 150 °C | - | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-2 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220 | - | Active | NOT SPECIFIED | - | 5.4 | Compliant | Yes | - | - | * | e3 | - | - | - | EAR99 | Tin (Sn) | 150 °C | -40 °C | ULTRA FAST SOFT RECOVERY | - | 8541.10.00.80 | - | Rectifier Diodes | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | not_compliant | - | 2 | - | R-PSFM-T2 | Not Qualified | NXP Semiconductor | - | - | - | SINGLE | - | Single | - | RECTIFIER DIODE | - | - | - | CATHODE | 14 A | - | - | - | - | 143 A | 14 A | - | - | - | - | 1.38 V | 500 V | 14 A | 1 | 60 ns | 50 µA | 500 V | 500 V | TO-220AC | - | 143 A | 143 A | 500 V | - | - | - | 143 A | 60 ns | - | 0.06 µs | - | 2013-06-14 00:00:00 | - | - | - | - | 6.35 mm | 6.35 mm | 4.7 mm | No | - | - | Lead Free | ||
BYV79E-200,127 NXP USA Inc. | 58 |
| - | - | - | - | - | - | NO | - | - | - | SILICON | 2 | BYV79 | 1.4 V | NXP SEMICONDUCTORS | NXP Semiconductors | SOD59 | BYV79E-200,127 | NXP USA Inc. | - | 1 | - | 150 °C | - | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-2 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220 | - | Active | NOT SPECIFIED | - | 3.48 | - | Yes | - | - | * | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | 8541.10.00.80 | - | Rectifier Diodes | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | not_compliant | - | 2 | - | R-PSFM-T2 | Not Qualified | NXP Semiconductor | - | - | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | CATHODE | - | - | - | - | - | - | 14 A | - | - | - | - | - | - | - | 1 | - | - | - | 200 V | TO-220AC | - | - | 160 A | - | - | - | - | - | - | - | 0.03 µs | - | 2013-06-14 00:00:00 | - | - | - | - | - | - | - | - | - | - | - | ||
BYC10X-600,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | Through Hole | TO-220-2 Full Pack | NO | - | TO-220F | - | SILICON | 2 | - | 2.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC10X-600,127 | NXP USA Inc. | - | 1 | - | 150 °C | - | Bulk | PLASTIC/EPOXY | PLASTIC, TO-220F, FULL PACK-3/2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | Active | - | - | 1.84 | - | Yes | - | - | - | e3 | - | - | - | - | Tin (Sn) | - | - | HYPER FAST RECOVERY | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | - | IEC-60134 | R-PSFM-T2 | - | - | - | - | - | SINGLE | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 200 µA @ 600 V | - | 2.9 V @ 10 A | ISOLATED | - | - | - | - | 150°C (Max) | - | - | - | - | 500 V | 10A | - | - | - | 1 | - | - | - | 600 V | TO-220AC | - | - | 100 A | - | - | - | 200 µA | - | - | - | 0.055 µs | - | - | 55 ns | - | - | - | - | - | - | - | - | - | - | ||
PBYR1025D,118 NXP USA Inc. | In Stock | - | - | - | - | Surface Mount | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | 150 °C | -65 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Common Cathode | - | - | - | - | - | - | 10 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5 mA | 25 V | - | - | - | 110 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | - | - | - | ||
BYV42E-200,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | - | - | NO | 3 | - | - | SILICON | 3 | BYV42 | 1.2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV42E-200,127 | NXP USA Inc. | - | 2 | - | 150 °C | - | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | Active | NOT SPECIFIED | - | 1.21 | Compliant | Yes | - | - | * | e3 | - | - | - | EAR99 | TIN | - | - | ULTRA FAST SOFT RECOVERY | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | not_compliant | - | - | IEC-134 | R-PSFM-T3 | - | - | - | - | - | COMMON CATHODE, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | - | CATHODE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 200 V | TO-220AB | - | - | 160 A | - | - | - | 100 µA | - | - | - | 0.028 µs | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BYV42E-200 NXP USA Inc. | 6700 | - | - | - | - | - | - | - | NO | - | - | - | SILICON | 3 | - | 1.2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV42E-200 | - | - | 2 | - | 150 °C | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | - | 5.49 | - | Yes | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | 8541.10.00.80 | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | not_compliant | - | - | IEC-134 | R-PSFM-T3 | Not Qualified | - | - | - | - | COMMON CATHODE, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | - | CATHODE | - | - | - | - | - | - | 15 A | - | - | - | - | - | - | - | 1 | - | - | - | 200 V | TO-220AB | - | - | 160 A | - | - | - | 100 µA | - | - | - | 0.028 µs | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BB131 NXP USA Inc. | 11880 |
| - | - | - | - | Surface Mount | SC-76, SOD-323 | YES | - | SOD-323 | - | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | - | BB131 | NXP USA Inc. | - | - | - | - | - | Bulk | - | - | - | - | Transferred | - | - | Active | - | - | 7.88 | - | Yes | -55°C ~ 125°C (TJ) | - | - | e3 | - | - | - | EAR99 | Matte Tin (Sn) | - | - | - | - | - | - | Varactors | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 30 V | - | 1.055pF @ 28V, 1MHz | - | - | - | - | - | - | - | - | 30 V | - | - | - | - | 12 pF | 16 | C0.5/C28 | - | - | - | - | - | - | - | ||
BAT74 NXP USA Inc. | 2190 | - | - | - | - | - | - | - | YES | - | - | - | SILICON | 4 | - | 1 V | NXP SEMICONDUCTORS | NXP Semiconductors | - | BAT74 | - | 1 | 2 | - | 125 °C | -65 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.23 W | - | 30 | - | 3.19 | - | Yes | - | - | - | e3 | Yes | - | - | EAR99 | Tin (Sn) | - | - | - | - | 8541.10.00.70 | - | Other Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | - | compliant | - | 4 | - | R-PDSO-G4 | Not Qualified | - | - | - | - | SEPARATE, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | - | - | - | 0.2 A | - | - | - | - | - | - | - | - | - | - | - | 30 V | - | - | - | 0.6 A | - | - | - | 2 µA | - | - | - | 0.005 µs | 25 V | - | - | - | - | - | - | - | - | - | - | - | - | ||
BYV42E-150,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | - | - | NO | - | - | - | SILICON | 3 | BYV42 | 1.2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV42E-150,127 | NXP USA Inc. | - | 2 | - | 150 °C | - | Bulk | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | Active | - | - | 1.23 | - | Yes | - | - | * | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | - | IEC-134 | R-PSFM-T3 | - | - | - | - | - | COMMON CATHODE, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | - | CATHODE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 150 V | TO-220AB | - | - | 160 A | - | - | - | 100 µA | - | - | - | 0.028 µs | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PBYR2545CT,127 NXP USA Inc. | In Stock | - | - | - | - | Through Hole | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | 150 °C | -65 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Common Cathode | - | - | - | - | - | - | 30 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 mA | 45 V | - | - | - | 180 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | - | - | - | ||
BYD47-20,135 NXP USA Inc. | In Stock | - | - | - | - | Surface Mount | - | - | YES | 2 | - | - | SILICON | 2 | - | - | NXP SEMICONDUCTORS | NXP Semiconductors | - | BYD47-20,135 | - | - | 1 | - | 175 °C | -65 °C | - | GLASS | HERMETICAL SEALED, GLASS PACKAGE-2 | ROUND | LONG FORM | Obsolete | - | - | - | - | - | 5.84 | Compliant | - | - | - | - | - | - | - | - | EAR99 | - | 175 °C | -65 °C | - | LOW LEAKAGE CURRENT | 8541.10.00.70 | - | - | - | AVALANCHE | END | WRAP AROUND | - | - | unknown | - | 2 | - | O-LELF-R2 | Not Qualified | - | - | - | - | SINGLE | - | Single | - | RECTIFIER DIODE | - | - | - | ISOLATED | 340 mA | - | - | - | - | - | 0.34 A | - | - | - | - | - | - | - | - | 300 ns | 5 µA | 2 kV | 2000 V | - | - | 10 A | - | - | - | - | - | - | - | - | 0.3 µs | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZA408B NXP USA Inc. | 1520 | - | - | - | - | - | - | - | YES | 6 | - | - | SILICON | 6 | - | - | NEXPERIA | Nexperia | - | BZA408B | - | 1 | 4 | - | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.26 W | - | 30 | - | 5.42 | Compliant | Yes | - | Cut Tape | - | e3 | - | - | - | EAR99 | Tin (Sn) | 150 °C | -65 °C | - | LOW CAPACITANCE | 8541.10.00.50 | 75 pF | - | - | AVALANCHE | DUAL | GULL WING | 260 | 1.7 mm | compliant | - | - | - | R-PDSO-G6 | - | - | 5 V | 5 V | BIDIRECTIONAL | COMPLEX | 100 nA | - | - | TRANS VOLTAGE SUPPRESSOR DIODE | - | - | - | - | - | - | 5 V | - | - | - | - | - | Bidirectional | - | - | - | - | - | - | - | - | - | 5 V | - | - | - | - | - | 20 W | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.1 mm | - | No | No SVHC | - | - | ||
BZA420A NXP USA Inc. | 2900 | - | - | - | - | Surface Mount | - | - | YES | 6 | - | - | SILICON | 6 | - | - | NEXPERIA | Nexperia | - | BZA420A | - | 1 | 4 | - | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.72 W | - | 30 | 21 V | 5.33 | Compliant | Yes | - | Cut Tape | - | e3 | - | - | - | EAR99 | Tin (Sn) | 150 °C | -65 °C | - | - | 8541.10.00.50 | - | - | 720 mW | AVALANCHE | DUAL | GULL WING | 260 | - | compliant | - | - | - | R-PDSO-G6 | - | - | 20 V | - | UNIDIRECTIONAL | COMMON ANODE, 4 ELEMENTS | - | - | - | TRANS VOLTAGE SUPPRESSOR DIODE | - | 720 mW | - | - | - | 100 nA | 28 V | 700 mA | - | - | - | 19.6 W | Unidirectional | - | - | - | - | - | - | - | - | - | 21 V | - | - | - | - | - | 19.6 W | Yes | - | - | - | - | - | - | - | - | - | - | - | 1 mm | 3.1 mm | 1.7 mm | - | No SVHC | - | - |