- Diode Type
- Surface Mount
- Ihs Manufacturer
- Manufacturer
- Manufacturer Part Number
- Part Life Cycle Code
- Reach Compliance Code
- Risk Rank
- Rohs Code
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- Number of Elements
- JESD-609 Code
Attribute column
Manufacturer
NXP Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Surface Mount | Number of Pins | Weight | Diode Element Material | Number of Terminals | Base Product Number | Forward Voltage-Max (VF) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reference Voltage-Nom | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Voltage Rating (DC) | Packaging | Series | JESD-609 Code | Pbfree Code | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Capacitance | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Current Rating | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Operating Supply Voltage | Polarity | Configuration | Voltage | Leakage Current | Element Configuration | Current | Diode Type | Power Dissipation | Case Connection | Forward Current | Max Reverse Leakage Current | Clamping Voltage | Max Surge Current | Output Current-Max | Direction | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Voltage Tol-Max | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Working Test Current | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Reverse Current-Max | Max Forward Surge Current (Ifsm) | Recovery Time | Dynamic Impedance-Max | Reverse Recovery Time-Max | Clamping Voltage-Max | Height | Length | Width | Radiation Hardening | REACH SVHC | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 1PS88SB48 NXP USA Inc. | 45000 | - | - | - | - | - | YES | - | - | SILICON | 6 | - | - | NEXPERIA | Nexperia | 1PS88SB48 | - | 1 | 4 | 150 °C | - | - | PLASTIC/EPOXY | R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 30 | 5.38 | - | Yes | - | - | - | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | - | LOW LEAKAGE CURRENT | 8541.10.00.70 | - | - | - | SCHOTTKY | DUAL | GULL WING | 260 | - | compliant | - | - | - | R-PDSO-G6 | Not Qualified | - | - | 2 BANKS, COMMON CATHODE, 2 ELEMENTS | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | 0.12 A | - | - | - | - | - | - | - | - | - | 40 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
1PS74SB23 NXP USA Inc. | 20000 | - | - | - | - | - | YES | - | - | SILICON | 6 | - | - | NEXPERIA | Nexperia | 1PS74SB23 | - | 1 | 1 | 125 °C | - | - | PLASTIC/EPOXY | R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 30 | 5.43 | - | Yes | - | - | - | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | - | HIGH SURGE CAPABILITY | 8541.10.00.80 | - | - | - | SCHOTTKY | DUAL | GULL WING | 260 | - | compliant | - | - | - | R-PDSO-G6 | Not Qualified | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | 1 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BAT721C NXP USA Inc. | 4070 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
1PS76SB70 NXP USA Inc. | 1322 | - | - | - | - | - | YES | - | - | SILICON | 2 | - | - | NEXPERIA | Nexperia | 1PS76SB70 | - | 1 | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | SC-76, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 30 | 5.31 | - | Yes | 1PS76SB70, Schottky Diode, 0.07A max, 70V, 2-Pin, UMD | - | - | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | - | - | 8541.10.00.70 | - | - | - | SCHOTTKY | DUAL | GULL WING | 260 | - | compliant | - | - | IEC-60134 | R-PDSO-G2 | Not Qualified | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | 0.07 A | - | - | - | - | - | - | - | - | - | 70 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BAV20 NXP USA Inc. | 10000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BYV410X-600,127 NXP USA Inc. | In Stock | - | - | - | - | Through Hole | - | 3 | 4.535924 g | - | - | - | - | - | - | - | NXP USA Inc. | - | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | - | Compliant | - | - | - | - | * | - | - | - | - | - | 150 °C | -40 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Common Cathode | - | - | - | - | 20 A | 50 µA | - | 132 A | - | - | 2.1 V | 600 V | 20 A | - | - | 35 ns | 50 µA | 600 V | - | - | - | 132 A | - | - | - | 35 ns | - | - | - | 6.35 mm | 6.35 mm | 6.35 mm | No | - | Lead Free | ||
BYC5-600,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | NO | - | - | SILICON | 2 | BYC5 | 2.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | BYC5-600,127 | NXP USA Inc. | - | 1 | 150 °C | - | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | Active | - | - | 1.23 | - | Yes | - | - | - | * | e3 | - | - | - | Tin (Sn) | - | - | ULTRA FAST RECOVERY | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | - | IEC-134 | R-PSFM-T2 | - | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | CATHODE | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | TO-220AC | - | - | 44 A | 100 µA | - | - | - | 0.05 µs | - | - | - | - | - | - | - | ||
NUR460P,133 NXP USA Inc. | 279 | - | - | 16 Weeks | - | - | NO | - | - | SILICON | 2 | - | 1.28 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | NUR460P,133 | - | - | 1 | 175 °C | - | - | PLASTIC/EPOXY | - | ROUND | LONG FORM | Active | - | - | - | - | - | 5.5 | - | Yes | - | - | - | - | e3 | - | - | - | Tin (Sn) | - | - | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | LOW LEAKAGE CURRENT | - | - | - | - | - | AXIAL | WIRE | - | - | not_compliant | - | - | IEC-60134 | O-PALF-W2 | - | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | ISOLATED | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | DO-201AD | - | - | 110 A | 10 µA | - | - | - | 0.075 µs | - | - | - | - | - | - | - | ||
BYC10DX-600,127 NXP USA Inc. | In Stock | - | - | - | Tin | Through Hole | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | 150 °C | -40 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | 10 A | 200 µA | - | 71 A | - | - | 2.5 V | 500 V | 10 A | - | - | 18 ns | 200 µA | 600 V | - | - | - | 71 A | - | - | - | 18 ns | - | - | - | - | - | - | No | - | Lead Free | ||
BZA456A NXP USA Inc. | 32760 | - | - | - | - | - | YES | 6 | - | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BZA456A | - | - | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | 4.08 | Compliant | No | - | - | Cut Tape | - | e0 | - | - | EAR99 | Tin/Lead (Sn/Pb) | 150 °C | -65 °C | - | - | 8541.10.00.50 | 240 pF | Transient Suppressors | 720 mW | - | - | - | - | 1.7 mm | unknown | - | - | - | - | - | 5.6 V | UNIDIRECTIONAL | - | - | 2 µA | - | - | TRANS VOLTAGE SUPPRESSOR DIODE | 720 mW | - | - | - | 8 V | - | - | Unidirectional | - | - | - | - | - | - | - | - | 5.6 V | - | - | - | - | - | - | - | - | - | 8 V | - | 3.1 mm | - | No | No SVHC | - | ||
NUR460PL06U NXP USA Inc. | 549 | - | - | - | - | Through Hole | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | Bulk | - | - | - | - | - | - | 175 °C | -65 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | 4 A | - | - | - | - | - | - | 600 V | 4 A | - | - | 75 ns | 10 µA | 600 V | - | - | - | 110 A | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NUR460P/L05U NXP USA Inc. | In Stock | - | - | - | - | Through Hole | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | Bulk | - | - | - | - | - | - | 175 °C | -65 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | - | 4 A | - | - | - | - | - | - | 600 V | 4 A | - | - | 75 ns | 10 µA | 600 V | - | - | - | 110 A | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PESD3V3S2UQ NXP USA Inc. | 42145 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BAS521 NXP USA Inc. | 34 | - | - | - | - | - | YES | - | - | SILICON | 2 | - | 1.1 V | NXP SEMICONDUCTORS | NXP Semiconductors | BAS521 | - | 1 | 1 | 150 °C | - | - | PLASTIC/EPOXY | ULTRA SMALL, PLASTIC, SC-79, 2 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-79 | 0.5 W | - | - | 30 | 5.29 | - | Yes | - | - | - | - | e3 | Yes | - | EAR99 | Tin (Sn) | - | - | - | - | 8541.10.00.70 | - | Rectifier Diodes | - | - | DUAL | FLAT | 260 | - | compliant | - | 2 | - | R-PDSO-F2 | Not Qualified | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | 0.25 A | - | - | - | - | - | - | - | - | - | 300 V | - | - | - | 4.5 A | - | - | - | - | 0.05 µs | - | - | - | - | - | - | - | ||
BAS86 NXP USA Inc. | 418 | - | - | - | - | - | YES | - | - | SILICON | 2 | - | 0.9 V | NXP SEMICONDUCTORS | NXP Semiconductors | BAS86 | - | 1 | 1 | 125 °C | - | - | GLASS | O-LELF-R2 | ROUND | LONG FORM | Transferred | - | 0.3 W | - | - | 30 | 4.02 | - | Yes | - | - | - | - | e3 | Yes | - | EAR99 | Tin (Sn) | - | - | - | ULTRA HIGH SPEED SWITCH | 8541.10.00.70 | - | Rectifier Diodes | - | SCHOTTKY | END | WRAP AROUND | 260 | - | compliant | - | 2 | - | O-LELF-R2 | Not Qualified | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | ISOLATED | - | - | - | - | 0.2 A | - | - | - | - | - | - | - | - | - | 50 V | - | - | - | 0.5 A | 5 µA | - | - | - | 0.004 µs | - | - | - | - | - | - | - | ||
BZX284-C12 NXP USA Inc. | 778 | - | - | - | - | - | YES | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BZX284-C12 | - | - | 1 | 150 °C | - | - | - | - | - | - | Transferred | - | 0.4 W | - | 12 V | - | 5.73 | - | Yes | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | 8541.10.00.50 | - | Voltage Reference Diodes | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | - | 5% | - | - | - | - | - | - | 5 mA | - | - | - | - | - | 400 Ω | - | - | - | - | - | - | - | - | ||
BYC58X-600,127 NXP USA Inc. | 631 |
| - | 6 Weeks | - | - | NO | - | - | SILICON | 2 | - | 3.2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | BYC58X-600,127 | - | - | 1 | 150 °C | - | - | PLASTIC/EPOXY | TO-220F, 3/2 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | 5.57 | - | Yes | - | - | - | - | e3 | - | - | - | Tin (Sn) | - | - | SUPER HYPER FAST RECOVERY | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | - | IEC-60134 | R-PSFM-T2 | - | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | ISOLATED | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | TO-220AC | - | - | 120 A | 150 µA | - | - | - | 0.021 µs | - | - | - | - | - | - | - | ||
BYV29G-600,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | NO | - | - | SILICON | 3 | BYV29 | 1.45 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | BYV29G-600,127 | NXP USA Inc. | - | 1 | 150 °C | - | Bulk | PLASTIC/EPOXY | R-PSIP-T3 | RECTANGULAR | IN-LINE | Active | - | - | Active | - | - | 5.46 | - | Yes | - | - | - | * | e3 | - | - | - | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | not_compliant | - | - | IEC-60134 | R-PSIP-T3 | - | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | CATHODE | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | TO-262AA | - | - | 77 A | 50 µA | - | - | - | 0.06 µs | - | - | - | - | - | - | - | ||
BAV70 NXP USA Inc. | 120345 | - | - | - | - | Surface Mount | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | 70 V | - | - | - | - | SMD/SMT | - | - | 85 °C | -40 °C | - | - | - | 1.5 pF | - | 250 mW | - | - | - | - | - | - | 200 mA | - | - | - | - | - | - | - | 70 V | - | Common Cathode | 2 A | - | - | - | 215 mA | 100 nA | - | 500 mA | - | - | 1.25 V | 75 V | 200 mA | - | - | 4 ns | - | 100 V | - | - | - | - | - | - | 4 A | 2 ns | - | - | - | - | - | - | - | No SVHC | Lead Free | ||
BYM56D NXP USA Inc. | 363 | - | - | - | - | - | NO | - | - | SILICON | 2 | - | 1.25 V | NXP SEMICONDUCTORS | NXP Semiconductors | BYM56D | - | - | 1 | 175 °C | - | - | GLASS | O-LALF-W2 | ROUND | LONG FORM | Obsolete | - | - | - | - | - | 5.8 | - | No | - | - | - | - | - | - | - | EAR99 | - | - | - | GENERAL PURPOSE | - | 8541.10.00.80 | - | Rectifier Diodes | - | AVALANCHE | AXIAL | WIRE | - | - | unknown | - | 2 | - | O-LALF-W2 | Not Qualified | - | - | SINGLE | - | - | - | - | RECTIFIER DIODE | - | ISOLATED | - | - | - | - | 1.4 A | - | - | - | - | - | 1 | - | - | - | 800 V | - | - | - | 80 A | 1 µA | - | - | - | 3 µs | - | - | - | - | - | - | - |