- Diode Type
- Surface Mount
- Ihs Manufacturer
- Manufacturer
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- Reach Compliance Code
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- JESD-609 Code
Attribute column
Manufacturer
NXP Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Surface Mount | Number of Pins | Weight | Diode Element Material | Number of Terminals | Breakdown Voltage / V | Breakdown Voltage-Nom | Forward Voltage-Max (VF) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Reference Voltage-Nom | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Ti | Packaging | Tolerance | JESD-609 Code | Pbfree Code | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Brand Name | Operating Supply Voltage | Polarity | Configuration | Element Configuration | Diode Type | Power Dissipation | Case Connection | Forward Current | Clamping Voltage | Peak Pulse Current | Output Current-Max | Peak Pulse Power | Test Current | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Zener Voltage | Voltage Tol-Max | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Working Test Current | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Non-rep Peak Rev Power Dis-Max | Diode Configuration | Reverse Current-Max | Recovery Time | Zener Current | Dynamic Impedance-Max | Breakdown Voltage-Min | Reverse Voltage (DC) | Repetitive Peak Reverse Voltage | Reverse Recovery Time-Max | Natural Thermal Resistance | Clamping Voltage-Max | Reverse Test Voltage | Breakdown Voltage-Max | Frequency Band | Diode Capacitance-Nom | Radiation Hardening | REACH SVHC |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 BAS40-04W NXP USA Inc. | 180 | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | 1 V | NXP SEMICONDUCTORS | NXP Semiconductors | - | BAS40-04W | 1 | 2 | 150 °C | - | PLASTIC/EPOXY | PLASTIC, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-70 | - | - | 30 | 5.31 | - | Yes | - | - | - | - | e3 | Yes | - | EAR99 | Tin (Sn) | - | - | - | LOW LEAKAGE CURRENT | 8541.10.00.70 | Rectifier Diodes | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | 3 | - | R-PDSO-G3 | Not Qualified | - | - | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | RECTIFIER DIODE | - | - | - | - | - | 0.12 A | - | - | - | - | - | - | - | - | - | - | - | 40 V | - | - | - | 0.2 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BB148 NXP USA Inc. | 15000 | - | - | - | - | - | YES | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | - | BB148 | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | 5.71 | - | Yes | - | - | - | - | e3 | - | - | EAR99 | Matte Tin (Sn) | - | - | - | - | - | Varactors | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | VARIABLE CAPACITANCE DIODE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 30 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 36 pF | - | - | ||
BYR16W-1200Q NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | NXP SEMICONDUCTORS | NXP Semiconductors | SOD142 | BYR16W-1200Q | - | - | - | - | - | - | - | - | Active | TO-247 | - | - | - | 5.74 | Non-Compliant | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | 2 | - | - | - | NXP Semiconductor | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BAT74S NXP USA Inc. | 1000 | - | - | - | - | - | YES | - | - | SILICON | 6 | - | - | - | NEXPERIA | Nexperia | - | BAT74S | 1 | 2 | 125 °C | - | PLASTIC/EPOXY | PLASTIC, SC-88, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | 0.24 W | - | 30 | 5.3 | - | Yes | BAT74S, Schottky Diode, 0.2A 30V 5ns Dual, 6-Pin, UMT | - | - | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | - | - | 8541.10.00.70 | - | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | - | - | R-PDSO-G6 | Not Qualified | - | - | - | SEPARATE, 2 ELEMENTS | - | RECTIFIER DIODE | - | - | - | - | - | 0.2 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.005 µs | - | - | - | - | - | - | - | - | ||
NUR460PL02U NXP USA Inc. | In Stock | - | - | - | - | - | NO | - | - | SILICON | 2 | - | - | 1.28 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | NUR460P/L02U | - | 1 | 175 °C | - | PLASTIC/EPOXY | O-PALF-W2 | ROUND | LONG FORM | Obsolete | - | - | - | - | 5.62 | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | LOW LEAKAGE CURRENT | - | - | - | - | AXIAL | WIRE | - | unknown | - | IEC-60134 | O-PALF-W2 | - | - | - | - | SINGLE | - | RECTIFIER DIODE | - | ISOLATED | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | DO-201AD | - | - | 110 A | - | - | 10 µA | - | - | - | - | - | - | 0.075 µs | - | - | - | - | - | - | - | - | ||
NUR460P/L03U NXP USA Inc. | In Stock | - | - | - | - | - | NO | - | - | SILICON | 2 | - | - | 1.28 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | NUR460P/L03U | - | 1 | 175 °C | - | PLASTIC/EPOXY | O-PALF-W2 | ROUND | LONG FORM | Obsolete | - | - | - | - | 5.62 | - | - | - | - | - | - | - | - | - | - | - | - | - | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | LOW LEAKAGE CURRENT | - | - | - | - | AXIAL | WIRE | - | unknown | - | IEC-60134 | O-PALF-W2 | - | - | - | - | SINGLE | - | RECTIFIER DIODE | - | ISOLATED | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | DO-201AD | - | - | 110 A | - | - | 10 µA | - | - | - | - | - | - | 0.075 µs | - | - | - | - | - | - | - | - | ||
BYV10X600PQ NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | NO | - | - | SILICON | 2 | - | - | 2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV10X-600PQ | - | 1 | 175 °C | - | PLASTIC/EPOXY | TO-220F, 3/2 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | 1.29 | - | - | - | - | - | - | - | - | - | - | - | - | - | ULTRA FAST SOFT RECOVERY POWER | LOW LEAKAGE CURRENT | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | IEC-60134 | R-PSFM-T2 | - | - | - | - | SINGLE | - | RECTIFIER DIODE | - | ISOLATED | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | TO-220AC | - | - | 88 A | - | - | 10 µA | - | - | - | - | - | - | 0.05 µs | - | - | - | - | - | - | - | - | ||
BYC10X-600PQ NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZA856A NXP USA Inc. | 35614 | - | - | - | - | - | YES | - | - | SILICON | 5 | - | 5.6 V | - | NXP SEMICONDUCTORS | NXP Semiconductors | - | BZA856A | 1 | 4 | 150 °C | - | PLASTIC/EPOXY | PLASTIC, SC-88A, 5 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-88A | 0.335 W | - | 30 | 3.63 | - | Yes | - | - | - | - | e3 | Yes | - | EAR99 | Tin (Sn) | - | - | - | - | 8541.10.00.50 | Transient Suppressors | - | AVALANCHE | DUAL | GULL WING | 260 | compliant | 5 | - | R-PDSO-G5 | Not Qualified | - | - | UNIDIRECTIONAL | COMMON ANODE, 4 ELEMENTS | - | TRANS VOLTAGE SUPPRESSOR DIODE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5.88 V | - | - | - | - | 24 W | - | - | - | - | - | 5.32 V | - | - | - | - | - | - | 5.88 V | - | - | - | - | ||
BYV10ED-600PJ NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 50 | - | - | - | - | - | - | - | - | Single | - | - | - | - | - | - | 600 | - | - | - | - | - | - | - | - | - | ||
BZA100 NXP USA Inc. | 2000 | - | - | - | - | - | YES | 20 | - | - | - | 7.2 V | 6.8 V | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | - | BZA100 | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | 4.51 | Compliant | Yes | - | - | - | - | - | - | - | EAR99 | - | 150 °C | -65 °C | - | - | 8541.10.00.50 | Transient Suppressors | 1.6 W | - | - | - | - | unknown | - | - | - | - | - | 6.8 V | Bidirectional, Unidirectional | - | - | TRANS VOLTAGE SUPPRESSOR DIODE | 1.6 W | - | - | 11 V | 4 A | - | 27.5 W | 200 mA | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 11 V | - | - | - | - | - | No SVHC | ||
BYC30X600P127 NXP USA Inc. | In Stock | - | - | 6 Weeks | Tin | Through Hole | NO | 2 | - | SILICON | 2 | - | - | 2.75 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC30X-600P,127 | - | 1 | 175 °C | - | PLASTIC/EPOXY | TO-220F, 3/2 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | 1.45 | Compliant | Yes | - | - | - | - | e3 | - | - | - | Tin (Sn) | 175 °C | -65 °C | HYPER FAST RECOVERY POWER | LOW LEAKAGE CURRENT | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | - | - | SINGLE | Single | RECTIFIER DIODE | - | ISOLATED | 30 A | - | - | - | - | - | 1.38 V | 600 V | 30 A | - | - | 1 | 35 ns | 10 µA | 600 V | 600 V | TO-220AC | - | 200 A | 220 A | - | - | 10 µA | 35 ns | - | - | - | 600 V | - | 0.035 µs | 3.5 °C/W | - | - | - | - | - | - | - | ||
NURS360BJ NXP USA Inc. | In Stock | - | - | 16 Weeks | - | Surface Mount | - | 2 | - | - | - | - | - | - | NXP SEMICONDUCTORS | WeEn Semiconductor Co Ltd | - | NURS360BJ | - | - | - | - | - | - | - | - | Sampling Now | - | - | - | - | 5.73 | Compliant | Yes | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 175 °C | -65 °C | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | NXP | - | - | - | Single | - | - | - | 3 A | - | - | - | - | - | 1.25 V | 600 V | 3 A | - | - | - | 75 ns | 2.5 µA | 600 V | - | - | - | 110 A | - | - | - | - | - | - | - | - | - | - | - | 14 °C/W | - | - | - | - | - | No | - | ||
BZX284-C3V9 NXP USA Inc. | 27000 | - | - | - | - | - | YES | 2 | - | SILICON | 2 | - | - | - | NXP SEMICONDUCTORS | NXP Semiconductors | - | BZX284-C3V9 | - | 1 | 150 °C | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC PACKAGE-2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.4 W | 3.9 V | - | 5.52 | Compliant | Yes | - | NOT SPECIFIED | - | 5 % | e2 | Yes | SMD/SMT | EAR99 | Tin/Copper (Sn/Cu) | - | - | - | - | 8541.10.00.50 | Voltage Reference Diodes | 400 mW | ZENER | DUAL | WRAP AROUND | NOT SPECIFIED | unknown | 2 | - | R-CDSO-R2 | Not Qualified | - | - | UNIDIRECTIONAL | SINGLE | - | ZENER DIODE | - | - | - | - | - | - | - | 5 mA | - | - | - | 3.9 V | 5% | - | - | - | - | - | - | 5 mA | - | - | - | - | - | - | 5 mA | 400 Ω | - | - | - | - | - | - | - | - | - | - | - | No SVHC | ||
BYC8B-600PJ NXP USA Inc. | In Stock | - | - | - | - | Surface Mount | - | 3 | 2.240009 g | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 175 °C | -65 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | 8 A | - | - | - | - | - | 1.5 V | 600 V | 8 A | - | - | - | 18 | 20 µA | - | - | - | - | - | - | - | Single | - | 18 ns | - | - | - | 600 V | 600 | - | - | - | - | - | - | - | - | - | ||
BYV415W600PQ NXP USA Inc. | In Stock | - | - | - | - | Through Hole | - | - | - | - | - | - | - | - | NXP SEMICONDUCTORS | NXP Semiconductors | SOT429 | BYV415W-600PQ | - | - | - | - | - | PLASTIC PACKAGE-3 | - | - | Active | TO-247 | - | - | - | 5.76 | Compliant | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | 3 | - | - | - | NXP Semiconductor | - | - | - | Common Cathode | - | - | - | - | - | - | - | - | - | - | 600 V | 15 A | - | - | - | 45 ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BYQ72EW-200Q NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 25 | - | - | - | - | - | - | - | - | Dual Common Cathode | - | - | - | - | - | - | 200 | - | - | - | - | - | - | - | - | - | ||
BAS70-07 NXP USA Inc. | 1248 | - | - | - | - | - | YES | - | - | - | - | - | - | 0.41 V | PHILIPS SEMICONDUCTORS | Philips Semiconductors | - | BAS70-07 | - | - | 150 °C | -65 °C | - | - | - | - | Transferred | - | - | - | - | 7.78 | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Other Diodes | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 70 V | - | - | - | - | - | - | 0.1 µA | - | - | - | - | - | - | - | - | - | 50 V | - | - | - | - | - | ||
1PS70SB84 NXP USA Inc. | 250000 | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | - | NEXPERIA | Nexperia | - | 1PS70SB84 | 1 | 2 | 125 °C | - | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | 30 | 5.18 | - | Yes | - | - | - | - | e3 | - | - | EAR99 | Tin (Sn) | - | - | - | - | 8541.10.00.60 | - | - | SCHOTTKY | DUAL | GULL WING | 260 | compliant | - | - | R-PDSO-G3 | - | - | - | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | MIXER DIODE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ULTRA HIGH FREQUENCY | - | - | - | ||
BYV25F-600127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | NO | - | - | SILICON | 2 | - | - | 1.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV25F-600,127 | - | 1 | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | 5.53 | - | Yes | - | - | - | - | e3 | - | - | - | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY POWER | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | - | - | SINGLE | - | RECTIFIER DIODE | - | CATHODE | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | TO-220AC | - | - | 66 A | - | - | 50 µA | - | - | - | - | - | - | 0.035 µs | - | - | - | - | - | - | - | - |