- Diode Type
- Surface Mount
- Ihs Manufacturer
- Manufacturer
- Manufacturer Part Number
- Part Life Cycle Code
- Reach Compliance Code
- Risk Rank
- Rohs Code
- Configuration
- Number of Elements
- JESD-609 Code
Attribute column
Manufacturer
NXP Diodes - Rectifiers - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Diode Element Material | Number of Terminals | Base Product Number | Current - Average Rectified (Io) (per Diode) | Forward Voltage-Max (VF) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Series | JESD-609 Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Additional Feature | HTS Code | Subcategory | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Brand Name | Configuration | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Operating Temperature - Junction | Max Surge Current | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Reverse Recovery Time | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Reverse Voltage | Diode Configuration | Reverse Current-Max | Recovery Time | Repetitive Peak Reverse Voltage | Reverse Recovery Time-Max | Reverse Recovery Time (trr) | Radiation Hardening | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 BYV10X600PQ NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | - | - | NO | - | - | SILICON | 2 | - | - | 2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV10X-600PQ | - | - | 1 | 175 °C | - | PLASTIC/EPOXY | TO-220F, 3/2 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 1.29 | - | - | - | - | - | - | - | - | ULTRA FAST SOFT RECOVERY POWER | LOW LEAKAGE CURRENT | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 600 V | TO-220AC | - | - | 88 A | - | - | 10 µA | - | - | 0.05 µs | - | - | - | ||
BYV10ED-600PJ NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 50 | - | - | - | - | - | - | - | - | Single | - | - | 600 | - | - | - | - | ||
BYC5DX-500,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | Through Hole | Through Hole | TO-220-2 Full Pack | NO | - | TO-220F | SILICON | 2 | - | - | 2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC5DX-500,127 | NXP Semiconductors | - | 1 | 150 °C | Bulk | PLASTIC/EPOXY | TO-220F, 3/2 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 1.48 | Compliant | Yes | - | e3 | - | Tin (Sn) | 150 °C | -40 °C | HYPER FAST RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 40 µA @ 500 V | 2 V @ 5 A | ISOLATED | 5 A | 150°C (Max) | - | - | 500 V | 5A | 2 V | 500 V | 5 A | 1 | 30 | 40 µA | 500 V | 500 V | TO-220AC | - | 44 A | 44 A | - | Single | 40 µA | - | 500 | 0.03 µs | 16 ns | No | Lead Free | ||
BYC8D-600,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | Tin | Through Hole | - | - | NO | - | - | SILICON | 2 | - | - | 2.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC8D-600,127 | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | R-PSFM-T2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | 1.41 | Compliant | Yes | - | e3 | - | Tin (Sn) | 150 °C | -40 °C | HYPER FAST RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | Single | - | RECTIFIER DIODE | - | - | CATHODE | 8 A | - | - | - | - | - | - | 600 V | 8 A | 1 | 20 ns | 40 µA | 600 V | 600 V | TO-220AC | - | 60 A | 60 A | - | - | 40 µA | - | - | 0.052 µs | - | No | Lead Free | ||
BYC10D-600,127 NXP USA Inc. | 5425 |
| - | 6 Weeks | - | Through Hole | Through Hole | TO-220-2 | NO | - | TO-220AC | SILICON | 2 | - | - | 2.5 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC10D-600,127 | NXP USA Inc. | - | 1 | 150 °C | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-3/2 | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 5.5 | Compliant | Yes | - | e3 | - | Tin (Sn) | 150 °C | -40 °C | HYPER FAST RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 200 µA @ 600 V | 2.5 V @ 10 A | CATHODE | 10 A | 150°C (Max) | 71 A | - | 500 V | 10A | 2 V | 500 V | 10 A | 1 | 18 ns | 200 µA | 600 V | 600 V | TO-220AC | - | 71 A | 71 A | - | - | 200 µA | 18 ns | - | 0.03 µs | 18 ns | No | Lead Free | ||
BYC5D-500,127 NXP USA Inc. | 18815 |
| - | 6 Weeks | - | Through Hole | Through Hole | TO-220-2 | NO | - | TO-220AC | SILICON | 2 | - | - | 2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC5D-500,127 | NXP USA Inc. | - | 1 | 150 °C | Bulk | PLASTIC/EPOXY | R-PSFM-T2 | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 1.45 | Compliant | Yes | - | e3 | - | Tin (Sn) | 150 °C | -40 °C | HYPER FAST RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 40 µA @ 500 V | 2 V @ 5 A | CATHODE | 5 A | 150°C (Max) | - | - | 500 V | 5A | - | 500 V | 5 A | 1 | 16 ns | 40 µA | 500 V | 500 V | TO-220AC | - | 40 A | 44 A | - | - | 40 µA | - | - | 0.03 µs | 16 ns | No | Lead Free | ||
BYW29E-100,127 NXP USA Inc. | 5719 |
| - | 6 Weeks | - | Through Hole | - | - | NO | 2 | - | SILICON | 2 | BYW29 | - | 1.3 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYW29E-100,127 | NXP USA Inc. | - | 1 | 150 °C | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-3/2 | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 5.39 | Compliant | Yes | * | e3 | EAR99 | Tin (Sn) | 150 °C | -40 °C | ULTRA FAST SOFT RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | Single | - | RECTIFIER DIODE | - | - | CATHODE | 8 A | - | 88 A | - | - | - | - | 100 V | 8 A | 1 | 25 ns | 10 µA | 100 V | 100 V | TO-220AC | - | 88 A | 88 A | 100 V | - | 10 µA | 25 ns | - | 0.025 µs | - | No | - | ||
BYV25FB-600,118 NXP USA Inc. | In Stock | - | - | 6 Weeks | Tin | Surface Mount | - | - | YES | 3 | - | SILICON | 2 | - | - | 1.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV25FB-600,118 | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | 2.04 | Compliant | Yes | - | e3 | - | Tin (Sn) | 150 °C | -40 °C | ULTRA FAST SOFT RECOVERY POWER | - | - | - | SINGLE | GULL WING | - | not_compliant | - | IEC-60134 | R-PSSO-G2 | - | - | SINGLE | Single | - | RECTIFIER DIODE | - | - | CATHODE | 5 A | - | - | - | - | - | 1.9 V | 600 V | 5 A | 1 | 35 ns | 50 µA | 600 V | 600 V | - | - | 66 A | 66 A | - | - | 50 µA | - | - | 0.035 µs | - | No | Lead Free | ||
BYC5B-600,118 NXP USA Inc. | 1473 |
| - | 6 Weeks | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | YES | - | D2PAK | SILICON | 2 | - | - | 2.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC5B-600,118 | NXP USA Inc. | 1 | 1 | 150 °C | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-3/2 | RECTANGULAR | SMALL OUTLINE | Active | - | Active | - | 5.37 | - | Yes | - | e3 | - | Tin (Sn) | - | - | ULTRA FAST RECOVERY | - | - | - | SINGLE | GULL WING | - | not_compliant | - | IEC-134 | R-PSSO-G2 | - | - | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100 µA @ 600 V | 2.9 V @ 5 A | CATHODE | - | 150°C (Max) | - | - | 500 V | 5A | - | - | - | 1 | - | - | - | 600 V | - | - | - | 44 A | - | - | 100 µA | - | - | 0.05 µs | 50 ns | - | - | ||
BYV32G-200,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | - | - | NO | - | - | SILICON | 3 | - | - | 1.15 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV32G-200,127 | - | - | 2 | 150 °C | - | PLASTIC/EPOXY | TO-262, I2PAK-3 | RECTANGULAR | IN-LINE | Active | - | - | - | 5.49 | - | Yes | - | e3 | EAR99 | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSIP-T3 | - | - | COMMON CATHODE, 2 ELEMENTS | - | - | RECTIFIER DIODE | - | - | CATHODE | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 200 V | TO-262AA | - | - | 137 A | - | - | 30 µA | - | - | 0.025 µs | - | - | - | ||
BYV42G-200,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | NO | - | I2PAK (TO-262) | SILICON | 3 | - | 15A | 1.2 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV42G-200,127 | NXP USA Inc. | - | 2 | 150 °C | Bulk | PLASTIC/EPOXY | TO-262, I2PAK-3 | RECTANGULAR | IN-LINE | Active | - | Active | - | 5.52 | - | Yes | - | e3 | EAR99 | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSIP-T3 | - | - | COMMON CATHODE, 2 ELEMENTS | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100 µA @ 200 V | 850 mV @ 15 A | CATHODE | - | 150°C (Max) | - | - | 200 V | - | - | - | - | 1 | - | - | - | 200 V | TO-262AA | - | - | 150 A | - | 1 Pair Common Cathode | 100 µA | - | - | 0.028 µs | 28 ns | - | - | ||
BYV34G-600,127 NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NXP USA Inc. | - | - | - | Bulk | - | - | - | - | - | - | Active | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60 | - | - | - | - | - | - | - | - | Dual Common Cathode | - | - | 600 | - | - | - | - | ||
BYC8DX-600,127 NXP USA Inc. | 4707 |
| - | 6 Weeks | - | - | Through Hole | TO-220-2 Full Pack | NO | - | TO-220F | SILICON | 2 | - | - | 2.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYC8DX-600,127 | NXP USA Inc. | - | 1 | 150 °C | Bulk | PLASTIC/EPOXY | TO-220F, 3/2 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 1.46 | - | Yes | - | e3 | - | Tin (Sn) | - | - | HYPER FAST RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 40 µA @ 600 V | 2.9 V @ 8 A | ISOLATED | - | 150°C (Max) | - | - | 600 V | 8A | - | - | - | 1 | - | - | - | 600 V | TO-220AC | - | - | 60 A | - | - | 40 µA | - | - | 0.052 µs | 20 ns | - | - | ||
BYT28-500,127 NXP USA Inc. | 11476 |
| - | - | - | - | - | - | NO | - | - | SILICON | 3 | BYT28 | - | 1.4 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYT28-500,127 | NXP USA Inc. | - | 2 | 150 °C | Bulk | PLASTIC/EPOXY | R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 5.36 | - | Yes | * | e3 | - | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T3 | - | - | COMMON CATHODE, 2 ELEMENTS | - | - | RECTIFIER DIODE | - | - | CATHODE | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 500 V | TO-220AB | - | - | 55 A | - | - | 10 µA | - | - | 0.06 µs | - | - | - | ||
BYV40E-150,115 NXP USA Inc. | 16081 |
| - | - | - | - | Surface Mount | TO-261-4, TO-261AA | YES | - | SOT-223 | SILICON | 4 | - | 1.5A | 1 V | NXP SEMICONDUCTORS | NXP Semiconductors | SOT223 | BYV40E-150,115 | NXP USA Inc. | - | 2 | 150 °C | Bulk | PLASTIC/EPOXY | R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Transferred | SC-73 | Active | - | 5.68 | - | Yes | - | e3 | - | TIN | - | - | ULTRA FAST SOFT RECOVERY | - | 8541.10.00.80 | Rectifier Diodes | DUAL | GULL WING | - | compliant | 4 | IEC-134 | R-PDSO-G4 | Not Qualified | NXP Semiconductor | COMMON CATHODE, 2 ELEMENTS | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 10 µA @ 150 V | 1 V @ 1.5 A | CATHODE | - | 150°C (Max) | - | 1.5 A | 150 V | - | - | - | - | 1 | - | - | - | 150 V | - | - | - | 6.6 A | - | 1 Pair Common Cathode | 10 µA | - | - | 0.025 µs | 25 ns | - | - | ||
BYW29ED-200,118 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | - | - | YES | - | - | SILICON | 2 | BYW29 | - | 1.3 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYW29ED-200,118 | NXP USA Inc. | 1 | 1 | 150 °C | Bulk | PLASTIC/EPOXY | PLASTIC PACKAGE-3/2 | RECTANGULAR | SMALL OUTLINE | Active | - | Active | NOT SPECIFIED | 1.2 | - | Yes | * | e3 | EAR99 | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | IEC-134 | R-PSSO-G2 | - | - | SINGLE | - | - | RECTIFIER DIODE | - | - | CATHODE | - | - | - | - | - | - | - | - | - | 1 | - | - | - | 200 V | - | - | - | 88 A | - | - | 10 µA | - | - | 0.025 µs | - | - | - | ||
BYV34-600,127 NXP USA Inc. | 9445 |
| - | 6 Weeks | - | - | Through Hole | TO-220-3 | NO | - | TO-220AB | SILICON | 3 | - | 20A | 1.48 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV34-600,127 | NXP USA Inc. | - | 2 | 150 °C | Bulk | PLASTIC/EPOXY | PLASTIC, SC-46, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 5.33 | - | Yes | - | e3 | - | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T3 | - | - | COMMON CATHODE, 2 ELEMENTS | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 50 µA @ 600 V | 1.48 V @ 20 A | CATHODE | - | 150°C (Max) | - | - | 600 V | - | - | - | - | 1 | - | - | - | 600 V | TO-220AB | - | - | 132 A | - | 1 Pair Common Cathode | 50 µA | - | - | 0.06 µs | 60 ns | - | - | ||
BYT28-300,127 NXP USA Inc. | 1228 |
| - | 6 Weeks | - | - | Through Hole | TO-220-3 | NO | - | TO-220AB | SILICON | 3 | - | 10A | 1.4 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYT28-300,127 | NXP USA Inc. | - | 2 | 150 °C | Bulk | PLASTIC/EPOXY | PLASTIC, SC-46, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 5.37 | - | Yes | - | e3 | EAR99 | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T3 | - | - | COMMON CATHODE, 2 ELEMENTS | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 10 µA @ 300 V | 1.4 V @ 10 A | CATHODE | - | 150°C (Max) | - | - | 300 V | - | - | - | - | 1 | - | - | - | 300 V | TO-220AB | - | - | 55 A | - | 1 Pair Common Cathode | 10 µA | - | - | 0.06 µs | 60 ns | - | - | ||
BYV29F-600,127 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | Through Hole | TO-220-2 | NO | - | TO-220AC | SILICON | 2 | - | - | 1.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV29F-600,127 | NXP Semiconductors | - | 1 | 150 °C | Bulk | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | Active | - | 5.46 | - | Yes | - | e3 | - | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY POWER | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | IEC-60134 | R-PSFM-T2 | - | - | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 50 µA @ 600 V | 1.9 V @ 8 A | CATHODE | - | 150°C (Max) | - | - | 600 V | 9A | - | - | - | 1 | 35 | - | - | 600 V | TO-220AC | - | - | 100 A | - | Single | 50 µA | - | 600 | 0.035 µs | 35 ns | - | - | ||
BYV29FD-600,118 NXP USA Inc. | In Stock | - | - | 6 Weeks | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | - | DPAK | SILICON | 2 | - | - | 1.9 V | WEEN SEMICONDUCTORS CO LTD | WeEn Semiconductor Co Ltd | - | BYV29FD-600,118 | NXP USA Inc. | 1 | 1 | 150 °C | Bulk | PLASTIC/EPOXY | SC-63, DPAK-3/2 | RECTANGULAR | SMALL OUTLINE | Active | - | Active | - | 1.39 | - | Yes | - | e3 | - | Tin (Sn) | - | - | ULTRA FAST SOFT RECOVERY POWER | - | - | - | SINGLE | GULL WING | - | not_compliant | - | IEC-60134 | R-PSSO-G2 | - | - | SINGLE | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 50 µA @ 600 V | 1.9 V @ 8 A | CATHODE | - | 150°C (Max) | - | - | 600 V | 9A | - | - | - | 1 | - | - | - | 600 V | TO-252 | - | - | 100 A | - | - | 50 µA | - | - | 0.035 µs | 35 ns | - | - |