- Configuration
- Diode Type
- Ihs Manufacturer
- Manufacturer
- Manufacturer Part Number
- Number of Elements
- Operating Temperature-Max
- Part Life Cycle Code
- Power Dissipation (Max)
- Reach Compliance Code
- Reference Voltage-Nom
- Risk Rank
Attribute column
Manufacturer
NXP Diodes - Zener - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Diode Element Material | Number of Terminals | Base Product Number | Breakdown Voltage / V | Ihs Manufacturer | Impedance (Max) (Zzt) | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reference Voltage-Nom | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Voltage Rating (DC) | Operating Temperature | Packaging | Series | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | HTS Code | Capacitance | Subcategory | Power Rating | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Polarity | Configuration | Impedance | Element Configuration | Current | Diode Type | Current - Reverse Leakage @ Vr | Power Dissipation | Voltage - Forward (Vf) (Max) @ If | Case Connection | Power - Max | Forward Current | Max Reverse Leakage Current | Test Current | Voltage - Zener (Nom) (Vz) | Zener Voltage | Voltage Tol-Max | JEDEC-95 Code | Working Test Current | Reverse Voltage | Reverse Current-Max | Dynamic Impedance-Max | Max Junction Temperature (Tj) | Ambient Temperature Range High | Voltage Temp Coeff-Max | Height | Length | Width | REACH SVHC | Lead Free |
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 BZX84-C6V2 NXP USA Inc. | 3000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZX84-C5V1/T3 NXP USA Inc. | In Stock | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BZX84-C5V1/T3 | - | - | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT-23 | 0.25 W | - | 5.1 V | 40 | 5.35 | - | Yes | - | - | - | - | - | - | e3 | Yes | EAR99 | TIN | - | - | 8541.10.00.50 | - | - | - | - | ZENER | DUAL | GULL WING | 260 | unknown | 3 | CECC50005-021 | R-PDSO-G3 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | TO-236AB | 5 mA | - | 2 µA | - | - | - | 1.2 mV/°C | - | - | - | - | - | ||
BZX84-C10 NXP USA Inc. | 67808 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZX84-C33 NXP USA Inc. | 10000 | - | - | Surface Mount | - | - | YES | 3 | - | SILICON | 3 | - | - | NEXPERIA | - | Nexperia | BZX84-C33 | - | 1 | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.25 W | - | 33 V | 30 | 5 | Compliant | Yes | BZX84-C33, Zener Diode, 33V u00b15% 0.25 W 0.05u00b5A, 3-Pin TO-236AB | 33 V | - | Cut Tape | - | 5 % | e3 | - | EAR99 | Tin (Sn) | 150 °C | -65 °C | 8541.10.00.50 | 70 pF | - | 350 mW | 250 mW | ZENER | DUAL | GULL WING | 260 | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | UNIDIRECTIONAL | SINGLE | 80 Ω | Single | - | ZENER DIODE | - | 350 mW | - | - | - | - | 50 nA | 2 mA | - | 33 V | 5% | TO-236AB | 2 mA | - | - | - | - | - | - | 1 mm | 3 mm | 1.4 mm | No SVHC | Lead Free | ||
BZX84-C2V7 NXP USA Inc. | 9000 | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BZX84-C2V7 | - | 1 | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | 0.25 W | - | 2.7 V | 40 | 3.12 | - | Yes | - | - | - | - | - | - | e3 | Yes | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | ZENER | DUAL | GULL WING | 260 | compliant | 3 | - | R-PDSO-G3 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | TO-236AB | 5 mA | - | - | 100 Ω | - | - | - | - | - | - | - | - | ||
BZX84-C18 NXP USA Inc. | 9000 | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BZX84-C18 | - | 1 | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | 0.25 W | - | 18 V | 30 | 3.16 | - | Yes | - | - | - | - | - | - | e3 | Yes | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | ZENER | DUAL | GULL WING | 260 | compliant | 3 | - | R-PDSO-G3 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | TO-236AB | 5 mA | - | - | 45 Ω | - | - | - | - | - | - | - | - | ||
BZV55-C3V3 NXP USA Inc. | 2350 | - | - | - | - | - | YES | - | - | SILICON | 2 | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BZV55-C3V3 | - | 1 | 1 | 200 °C | -65 °C | - | GLASS | O-LELF-R2 | ROUND | LONG FORM | Transferred | - | 0.4 W | - | 3.3 V | 40 | 3.63 | - | Yes | - | - | - | - | - | - | e3 | Yes | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | ZENER | END | WRAP AROUND | 260 | compliant | 2 | - | O-LELF-R2 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | ISOLATED | - | - | - | - | - | - | 5% | - | 5 mA | - | 5 µA | 95 Ω | - | - | - | - | - | - | - | - | ||
BZX84-C3V6 NXP USA Inc. | 45840 | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | NEXPERIA | - | Nexperia | BZX84-C3V6 | NXP USA Inc. | 1 | 1 | 150 °C | -65 °C | Bulk | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.25 W | Active | 3.6 V | 30 | 5 | - | Yes | BZX84-C3V6, Zener Diode, 3.6V u00b15% 0.25 W 5u00b5A, 3-Pin TO-236AB | - | - | - | * | - | e3 | - | EAR99 | Tin (Sn) | - | - | 8541.10.00.50 | - | - | - | - | ZENER | DUAL | GULL WING | 260 | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | TO-236AB | 5 mA | - | - | - | - | - | - | - | - | - | - | - | ||
BZX84C27 NXP USA Inc. | 4680 | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | NEXPERIA | - | Nexperia | BZX84-C27 | - | 1 | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.25 W | - | 27 V | 30 | 5 | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | Tin (Sn) | - | - | 8541.10.00.50 | - | - | - | - | ZENER | DUAL | GULL WING | 260 | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | TO-236AB | 2 mA | - | - | - | - | - | - | - | - | - | - | - | ||
BZX84-B4V7T/R NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZX84-C30 NXP USA Inc. | 3000 | - | - | - | - | - | YES | - | - | SILICON | 3 | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BZX84-C30 | - | 1 | 1 | 150 °C | -65 °C | - | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | 0.25 W | - | 30 V | 40 | 3.09 | - | Yes | - | - | - | - | - | - | e3 | Yes | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | ZENER | DUAL | GULL WING | 260 | compliant | 3 | - | R-PDSO-G3 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | TO-236AB | 2 mA | - | - | 80 Ω | - | - | - | - | - | - | - | - | ||
BZX84-C4V7 NXP USA Inc. | 5518 | - | - | - | - | - | YES | 3 | - | - | - | - | 4.7 V | PHILIPS SEMICONDUCTORS | - | Philips Semiconductors | BZX84-C4V7 | - | - | 1 | 150 °C | - | - | - | - | - | - | Transferred | - | 0.3 W | - | 4.7 V | - | 3.85 | Compliant | Yes | - | 4.7 V | - | Cut Tape | - | 5 % | e3 | - | - | Matte Tin (Sn) | 150 °C | -65 °C | - | 260 pF | Voltage Reference Diodes | 350 mW | 250 mW | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | 5 mA | ZENER DIODE | - | 250 mW | - | - | - | 10 mA | 3 µA | - | - | 4.7 V | 5% | - | 5 mA | 2 V | - | 80 Ω | 150 °C | 150 °C | - | 1.1 mm | - | - | No SVHC | Lead Free | ||
BZX84-C39 NXP USA Inc. | 43000 | - | - | - | - | - | YES | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | Philips Semiconductors | BZX84-C39 | - | - | 1 | 150 °C | - | - | - | - | - | - | Transferred | - | 0.3 W | - | 39 V | - | 7.93 | - | Yes | - | - | - | - | - | - | e3 | - | - | Matte Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | - | 2 mA | - | - | 130 Ω | - | - | - | - | - | - | - | - | ||
BZV55-C20 NXP USA Inc. | 11805 | - | - | - | - | - | YES | - | - | SILICON | 2 | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BZV55-C20 | - | 1 | 1 | 200 °C | -65 °C | - | GLASS | HERMETIC SEALED, GLASS PACKAGE-2 | ROUND | LONG FORM | Transferred | - | 0.4 W | - | 20 V | 30 | 5.23 | - | Yes | - | - | - | - | - | - | e3 | Yes | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | ZENER | END | WRAP AROUND | 260 | compliant | 2 | - | O-LELF-R2 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | ISOLATED | - | - | - | - | - | - | 5% | - | 5 mA | - | 0.05 µA | 55 Ω | - | - | 18 mV/°C | - | - | - | - | - | ||
BZX84-C16 NXP USA Inc. | 33000 | - | - | - | - | - | YES | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | Philips Semiconductors | BZX84-C16 | - | - | 1 | 150 °C | - | - | - | - | - | - | Transferred | - | 0.3 W | - | 16 V | - | 3.84 | - | Yes | - | - | - | - | - | - | e3 | - | - | Matte Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | - | 5 mA | - | - | 40 Ω | - | - | - | - | - | - | - | - | ||
BZX79-C7V5 NXP USA Inc. | 1321058 | - | - | - | - | - | NO | - | - | - | - | - | - | LESHAN RADIO CO LTD | - | LRC Leshan Radio Co Ltd | BZX79/C7V5 | - | - | 1 | 200 °C | - | - | - | - | - | - | Contact Manufacturer | - | 0.5 W | - | 7.5 V | - | 5.79 | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | - | 8541.10.00.50 | - | Voltage Reference Diodes | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5.7% | - | 5 mA | - | - | 7 Ω | - | - | - | - | - | - | - | - | ||
TDZ5V6J135 NXP Semiconductors | In Stock | - | - | - | Surface Mount | SC-90, SOD-323F | - | - | SOD-323F | - | - | TDZ5V6 | - | - | 40 Ohms | - | - | NXP Semiconductors | - | - | - | - | Bulk | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | -55°C ~ 150°C | - | Automotive, AEC-Q101, TDZxJ | ±1.96% | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 10 μA @ 2.5 V | - | 1.1 V @ 100 mA | - | 500 mW | - | - | - | 5.6 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
TDZ3V3J NXP USA Inc. | 1000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZV55-C5V1 NXP USA Inc. | 723 | - | - | - | - | - | YES | - | - | SILICON | 2 | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BZV55-C5V1 | - | 1 | 1 | 200 °C | -65 °C | - | GLASS | O-LELF-R2 | ROUND | LONG FORM | Transferred | - | 0.4 W | - | 5.1 V | 40 | 3.21 | - | Yes | - | - | - | - | - | - | e3 | Yes | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | ZENER | END | WRAP AROUND | 260 | compliant | 2 | - | O-LELF-R2 | Not Qualified | UNIDIRECTIONAL | SINGLE | - | - | - | ZENER DIODE | - | - | - | ISOLATED | - | - | - | - | - | - | 5% | - | 5 mA | - | 2 µA | 60 Ω | - | - | - | - | - | - | - | - | ||
BZV55-C22 NXP USA Inc. | 90 | - | - | - | - | - | YES | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | Philips Semiconductors | BZV55-C22 | - | - | 1 | 200 °C | - | - | - | - | - | - | Transferred | - | 0.5 W | - | 22 V | - | 3.93 | - | Yes | - | - | - | - | - | - | e3 | - | - | Matte Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | ZENER DIODE | - | - | - | - | - | - | - | - | - | - | 5% | - | 5 mA | - | - | 55 Ω | - | - | - | - | - | - | - | - |