- Configuration
- Diode Type
- Ihs Manufacturer
- Manufacturer
- Manufacturer Part Number
- Number of Elements
- Operating Temperature-Max
- Part Life Cycle Code
- Power Dissipation (Max)
- Reach Compliance Code
- Reference Voltage-Nom
- Risk Rank
Attribute column
Manufacturer
NXP Diodes - Zener - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Diode Element Material | Number of Terminals | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Reference Voltage-Nom | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Operating Temperature | Packaging | Series | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Polarity | Configuration | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Case Connection | Power - Max | Impedance-Max | Voltage - Zener (Nom) (Vz) | Zener Voltage | Voltage Tol-Max | JEDEC-95 Code | Working Test Current | Reverse Current-Max | Dynamic Impedance-Max | Voltage Temp Coeff-Max | REACH SVHC | RoHS Status |
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 BZX84-B36/LF1R NXP USA Inc. | In Stock | - | Datasheet | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | - | TO-236AB (SOT23) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -65°C~150°C | Tape & Reel (TR) | Automotive, AEC-Q101 | ±2% | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 50nA @ 25.2V | 900mV @ 10mA | - | 250mW | 90Ohms | 36V | - | - | - | - | - | - | - | - | ROHS3 Compliant | ||
 BZV85-C15 NXP USA Inc. | 35000 | - | - | - | - | NO | - | - | SILICON | 2 | NXP SEMICONDUCTORS | NXP Semiconductors | BZV85C15 | 1 | 1 | 200 °C | - | GLASS | O-LALF-W2 | ROUND | LONG FORM | Active | DO-41 | 1 W | 15 V | NOT APPLICABLE | 5.25 | - | Yes | - | - | - | - | e3 | Yes | - | - | EAR99 | Tin (Sn) | - | - | CAPACITANCE IS CAPTURED FROM THE GRAPH | 8541.10.00.50 | Voltage Reference Diodes | - | ZENER | AXIAL | WIRE | NOT APPLICABLE | compliant | 2 | CECC50005-010 | O-LALF-W2 | Not Qualified | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | ISOLATED | - | - | - | - | 5% | DO-41 | 15 mA | 0.05 µA | 15 Ω | 13.6 mV/°C | - | - | ||
BZT52H-B4V7 NXP USA Inc. | 3000 | - | - | - | - | YES | - | - | SILICON | 2 | NEXPERIA | Nexperia | BZT52H-B4V7 | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | R-PDSO-F2 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.375 W | 4.7 V | NOT SPECIFIED | 5.43 | - | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.50 | - | - | ZENER | DUAL | FLAT | NOT SPECIFIED | compliant | - | - | R-PDSO-F2 | - | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | - | - | - | - | - | 1.91% | - | 5 mA | - | - | - | - | - | ||
BZX79-C6V2 NXP USA Inc. | 40000 | - | - | - | - | NO | - | - | SILICON | 2 | NEXPERIA | Nexperia | BZX79-C6V2 | 1 | 1 | 200 °C | -65 °C | GLASS | O-LALF-W2 | ROUND | LONG FORM | Active | - | 0.5 W | 6.2 V | 30 | 5.23 | - | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.50 | - | - | ZENER | AXIAL | WIRE | 260 | compliant | - | - | O-LALF-W2 | - | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | ISOLATED | - | - | - | - | 5% | DO-35 | 5 mA | - | - | - | - | - | ||
BZX84-B6V8 NXP USA Inc. | 11000 | - | - | - | - | YES | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BZX84-B6V8 | - | 1 | 150 °C | - | - | - | - | - | Transferred | - | 0.3 W | 6.8 V | - | 5.72 | - | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Matte Tin (Sn) | - | - | - | 8541.10.00.50 | Voltage Reference Diodes | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | ZENER DIODE | - | - | - | - | - | - | - | 2% | - | 5 mA | - | 15 Ω | - | - | - | ||
PZU4.7B2 NXP USA Inc. | 30000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NZH6V8B NXP USA Inc. | In Stock | - | - | - | - | YES | 2 | - | SILICON | 2 | NEXPERIA | Nexperia | NZH6V8B | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | R-PDSO-F2 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.5 W | 6.8 V | NOT SPECIFIED | 5.58 | Compliant | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | 150 °C | - | - | 8541.10.00.50 | - | 500 mW | ZENER | DUAL | FLAT | NOT SPECIFIED | compliant | - | - | R-PDSO-F2 | - | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | - | - | - | - | 6.8 V | 2.55% | - | 20 mA | - | - | - | No SVHC | - | ||
BZX79-B5V1 NXP USA Inc. | 10000 | - | - | - | - | NO | - | - | - | - | GOOD-ARK ELECTRONICS CO LTD | Suzhou Good-Ark Electronics Co Ltd | BZX79-B5V1 | - | 1 | 200 °C | - | - | - | - | - | Active | - | 0.5 W | 5.1 V | - | 5.72 | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.50 | Voltage Reference Diodes | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | ZENER DIODE | - | - | - | - | - | - | - | 2% | - | 5 mA | - | 60 Ω | - | - | - | ||
BZV49-C6V2 NXP USA Inc. | 29 | - | - | - | - | YES | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BZV49-C6V2 | - | 1 | 150 °C | - | - | - | - | - | Transferred | - | 1 W | 6.2 V | - | 5.79 | - | No | - | - | - | - | e0 | - | - | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | 8541.10.00.50 | Voltage Reference Diodes | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | ZENER DIODE | - | - | - | - | - | - | - | 5% | - | 5 mA | - | 10 Ω | - | - | - | ||
BZT52H-B6V8 NXP USA Inc. | 820 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
TDZ9V1J NXP USA Inc. | 3000 | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | 500 mW | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 9.1 V | - | - | - | - | - | - | No SVHC | - | ||
BZT52H-C75 NXP USA Inc. | 9086 | - | - | - | - | YES | 2 | - | SILICON | 2 | NXP SEMICONDUCTORS | NXP Semiconductors | BZT52H-C75 | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.375 W | 74.5 V | 30 | 8.11 | Compliant | Yes | - | - | - | - | e3 | Yes | - | - | EAR99 | Tin (Sn) | 150 °C | -65 °C | - | 8541.10.00.50 | Voltage Reference Diodes | 375 mW | ZENER | DUAL | FLAT | 260 | unknown | 2 | - | R-PDSO-F2 | Not Qualified | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | - | - | - | - | 75 V | 6.04% | - | 2 mA | - | 400 Ω | - | No SVHC | - | ||
BZV55-B68 NXP USA Inc. | 10000 | - | - | - | - | YES | - | - | SILICON | 2 | NEXPERIA | Nexperia | BZV55-B68 | 1 | 1 | 200 °C | -65 °C | GLASS | O-LELF-R2 | ROUND | LONG FORM | Active | - | 0.4 W | 68 V | NOT SPECIFIED | 5.18 | - | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.50 | - | - | ZENER | END | WRAP AROUND | NOT SPECIFIED | compliant | - | IEC-60134 | O-LELF-R2 | - | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | ISOLATED | - | - | - | - | 2% | - | 2 mA | - | - | - | - | - | ||
BZB84-B43 NXP USA Inc. | In Stock | - | - | - | - | YES | 3 | - | SILICON | 3 | NEXPERIA | Nexperia | BZB84-B43 | 1 | 2 | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.3 W | 43 V | NOT SPECIFIED | 5.48 | Compliant | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | 150 °C | -55 °C | - | 8541.10.00.50 | - | 300 mW | ZENER | DUAL | GULL WING | NOT SPECIFIED | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | UNIDIRECTIONAL | COMMON ANODE, 2 ELEMENTS | ZENER DIODE | - | - | - | - | - | - | 43 V | 2% | TO-236AB | 2 mA | - | - | - | No SVHC | - | ||
BZT52H-B18 NXP USA Inc. | 3000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZT52H-B30 NXP USA Inc. | 1122000 | - | - | - | - | YES | - | - | SILICON | 2 | NEXPERIA | Nexperia | BZT52H-B30 | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | R-PDSO-F2 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.375 W | 30 V | - | 5.42 | - | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.50 | - | - | ZENER | DUAL | FLAT | - | compliant | - | - | R-PDSO-F2 | - | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | - | - | - | - | - | 2% | - | 2 mA | - | - | - | - | - | ||
BZT52H-B24 NXP USA Inc. | 3000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BZV55-C11 NXP USA Inc. | 165000 | - | - | - | - | YES | - | - | - | - | PHILIPS SEMICONDUCTORS | Philips Semiconductors | BZV55-C11 | - | 1 | 200 °C | - | - | - | - | - | Transferred | - | 0.5 W | 11 V | - | 7.95 | Compliant | Yes | - | - | - | - | e3 | - | - | - | - | Matte Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | ZENER DIODE | - | - | - | - | - | - | 11 V | 5% | - | 5 mA | - | 20 Ω | - | - | - | ||
BZV85-C5V6 NXP USA Inc. | 2500 | - | - | - | - | NO | - | - | SILICON | 2 | NXP SEMICONDUCTORS | NXP Semiconductors | BZV85-C5V6 | 1 | 1 | 200 °C | - | GLASS | O-LALF-W2 | ROUND | LONG FORM | Transferred | DO-41 | 1 W | 5.6 V | NOT APPLICABLE | 3.57 | - | Yes | - | - | - | - | e3 | Yes | - | - | - | Tin (Sn) | - | - | - | - | Voltage Reference Diodes | - | ZENER | AXIAL | WIRE | NOT APPLICABLE | compliant | 2 | - | O-LALF-W2 | Not Qualified | UNIDIRECTIONAL | SINGLE | ZENER DIODE | - | - | ISOLATED | - | - | - | - | 5% | DO-41 | 45 mA | 2 µA | 7 Ω | 2.7 mV/°C | - | - | ||
BZB84-B18 NXP USA Inc. | 14800 | - | - | - | - | YES | - | - | SILICON | 3 | NEXPERIA | Nexperia | BZB84-B18 | 1 | 2 | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | 0.3 W | 18 V | - | 5.48 | - | Yes | - | - | - | - | e3 | - | - | - | EAR99 | Tin (Sn) | - | - | - | 8541.10.00.50 | - | - | ZENER | DUAL | GULL WING | - | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | UNIDIRECTIONAL | COMMON ANODE, 2 ELEMENTS | ZENER DIODE | - | - | - | - | - | - | - | 2% | TO-236AB | 5 mA | - | - | - | - | - |