- Mfr
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- Drain to Source Voltage (Vdss)
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Manufacturer
NXP Transistors - FETs, MOSFETs - Single
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) @ Vgs | Ihs Manufacturer | Input Capacitance (Ciss) @ Vds | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Online Catalog | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | PCN Design/Specification | PCN Packaging | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Samacsys Description | Standard Package | Turn Off Delay Time | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | Family | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Polarity/Channel Type | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Max Junction Temperature (Tj) | FET Feature | Drain to Source Resistance | Ambient Temperature Range High | Highest Frequency Band | Height | REACH SVHC |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 BSS138BKS NXP USA Inc. | 36000 | - | - | - | - | YES | - | - | 6 | SILICON | - | 0.32 A | - | - | NEXPERIA | - | Nexperia | BSS138BKS | - | 1 | 2 | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | 5.06 | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | Tin (Sn) | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | DUAL | GULL WING | - | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | 1.6 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
BSS138BKW NXP USA Inc. | 21000 | - | - | - | - | YES | - | - | 3 | SILICON | - | 0.32 A | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BSS138BKW | - | 1 | 1 | - | - | - | - | PLASTIC/EPOXY | PLASTIC, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-70 | - | - | - | - | 30 | 5.54 | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | PURE TIN | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | DUAL | GULL WING | 260 | unknown | 3 | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | 1.6 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
2N7002PW NXP USA Inc. | 2700 | - | - | - | - | YES | - | - | 3 | SILICON | - | 0.31 A | - | - | NEXPERIA | - | Nexperia | 2N7002PW | - | 1 | 1 | - | 150 °C | -55 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | - | - | - | 30 | 5.15 | - | Yes | Trench MOSFET,N channel 60V,310mA SOT323 NXP 2N7002PW N-channel MOSFET Transistor, 0.31 A, 60 V, 3-Pin SOT-323 | - | - | - | - | - | e3 | - | EAR99 | - | Tin (Sn) | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | DUAL | GULL WING | 260 | compliant | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | 1.6 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
PSMN0R9-25YLC NXP USA Inc. | 600 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PSMN1R2-25YLC NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
NX3008CBKV NXP USA Inc. | 20000 | - | - | - | - | YES | - | - | 6 | SILICON | - | 0.4 A | - | - | NEXPERIA | - | Nexperia | NX3008CBKV | - | 1 | 2 | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | 5.2 | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | Tin (Sn) | - | - | LOW THRESHOLD | - | - | - | DUAL | FLAT | - | compliant | - | - | R-PDSO-F6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL AND P-CHANNEL | - | - | - | - | - | 1.4 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
BUK7219-55A NXP USA Inc. | 460 | - | - | - | - | YES | - | - | 2 | SILICON | - | 55 A | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BUK7219-55A | - | 1 | 1 | - | 175 °C | - | - | PLASTIC/EPOXY | PLASTIC, TO-252, SC-63, DPAK, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | - | - | NOT SPECIFIED | 5.23 | - | Yes | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Tin (Sn) | - | - | - | - | FET General Purpose Power | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | TO-252AA | - | 55 A | 0.019 Ω | - | 250 A | 55 V | 120 mJ | METAL-OXIDE SEMICONDUCTOR | 114 W | - | - | - | - | - | - | - | ||
PSMN1R7-60BS NXP USA Inc. | 9000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PMV250EPEA NXP USA Inc. | 11466 | - | - | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | 26 ns | - | - | - | - | - | - | 180 mΩ | - | 150 °C | -55 °C | - | - | - | 480 mW | - | - | - | - | - | - | - | - | - | 1 | - | 480 mW | - | 4 ns | - | - | - | - | - | - | - | - | -40 V | - | - | -1.5 A | -1.7 V | - | 20 V | - | - | -40 V | - | - | - | - | - | 150 °C | - | 180 mΩ | 150 °C | - | 1.1 mm | No SVHC | ||
PMN20EN NXP USA Inc. | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PSMN1R1-40BS NXP USA Inc. | 200100 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PSMN8R040PS127 NXP USA Inc. | In Stock | - | - | Through Hole | TO-220-3 | - | - | TO-220AB | - | - | 77A (Ta) | - | - | - | - | - | - | - | NXP USA Inc. | - | - | - | - | - | Bulk | - | - | - | - | - | - | - | - | 86W (Ta) | Active | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 7.6mOhm @ 25A, 10V | 4V @ 1mA | 1262 pF @ 12 V | 21 nC @ 10 V | 40 V | ±20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BSS83 NXP USA Inc. | 1940 | - | - | - | - | YES | - | - | 4 | SILICON | - | 0.05 A | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BSS83 | - | 1 | 1 | - | 125 °C | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT-143 | - | - | - | - | 30 | 7.87 | - | Yes | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Tin (Sn) | - | - | - | 8541.21.00.95 | FET General Purpose Power | - | DUAL | GULL WING | 260 | compliant | 4 | - | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | SUBSTRATE | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | 0.05 A | 120 Ω | - | - | 10 V | - | METAL-OXIDE SEMICONDUCTOR | 0.23 W | - | - | - | - | - | - | - | ||
2N7002P,215 NXP USA Inc. | 10000 | - | Datasheet | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | - | SOT-23 (TO-236AB) | - | - | 360mA (Ta) | - | - | 0.8nC @ 4.5V | - | 50pF @ 10V | - | - | - | - | - | N-Channel Logic Level Gate FETs | - | - | - | - | - | - | - | - | - | Resin Hardener 02/Jul/2013 | Lighter Reels 02/Jan/2014 | - | - | - | - | Lead free / RoHS Compliant | - | - | 3,000 | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 350mW | FETs - Single | MOSFET N-Channel, Metal Oxide | - | 1.6 Ohm @ 500mA, 10V | 2.4V @ 250碌A | - | - | 60V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | ||
BLF6G38-10G,118 NXP USA Inc. | In Stock | - | - | - | - | YES | - | - | 2 | SILICON | - | 3.1 A | - | - | AMPLEON NETHERLANDS B V | - | Ampleon | BLF6G38-10G,118 | - | - | 1 | - | - | - | - | CERAMIC, METAL-SEALED COFIRED | SMALL OUTLINE, S-CDSO-G2 | SQUARE | SMALL OUTLINE | Obsolete | - | - | - | - | - | NOT SPECIFIED | 7.47 | - | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | DUAL | GULL WING | NOT SPECIFIED | unknown | - | IEC-60134 | S-CDSO-G2 | - | SINGLE | - | ENHANCEMENT MODE | - | SOURCE | - | - | - | - | AMPLIFIER | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | L BAND | - | - | ||
PSMN2R0-30YLE NXP USA Inc. | 1154 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PSMN017-80BS NXP USA Inc. | 50 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
PMPB20EN/S500X NXP Semiconductors | In Stock | - | - | Surface Mount | 6-UDFN Exposed Pad | - | - | DFN2020MD-6 | - | - | 7.2A (Ta) | - | 4.5V, 10V | - | - | - | - | - | NXP Semiconductors | - | - | - | - | - | Bulk | - | - | - | - | - | - | - | - | 1.7W (Ta), 12.5W (Tc) | Active | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 19.5mOhm @ 7A, 10V | 2V @ 250μA | 435 pF @ 10 V | 10.8 nC @ 10 V | 30 V | ±20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BUK7275-100A NXP USA Inc. | 2500 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
BSS138AKA NXP USA Inc. | 15755 | - | - | - | - | YES | - | - | 3 | SILICON | - | 0.2 A | - | - | NXP SEMICONDUCTORS | - | NXP Semiconductors | BSS138AKA | - | 1 | 1 | - | - | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | 30 | 7.76 | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | TIN | - | - | - | - | - | - | DUAL | GULL WING | 260 | unknown | - | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | - | TO-236AB | - | - | 5.2 Ω | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - |