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Manufacturer

NXP Transistors - IGBTs - Single

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4 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Surface Mount

Number of Terminals

Transistor Element Material

Class

Drain Current-Max (ID)

Ihs Manufacturer

Manufacturer

Manufacturer Part Number

Mfr

Moisture Sensitivity Levels

Number of Elements

Package

Package Body Material

Package Description

Package Shape

Package Style

Part Life Cycle Code

Product Status

Risk Rank

Rohs Code

Operating Temperature

Series

Size / Dimension

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JESD-30 Code

Approval Agency

Configuration

Operating Mode

Case Connection

Response Time

Transistor Application

Fuse Type

Breaking Capacity @ Rated Voltage

Polarity/Channel Type

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

Features

2258

-

-

Requires Holder

Cartridge, Non-Standard

YES

6

SILICON

-

26 A

NEXPERIA

Nexperia

BUK9K17-60E

Eaton - Bussmann Electrical Division

1

2

Bulk

PLASTIC/EPOXY

SMALL OUTLINE, R-PDSO-G6

RECTANGULAR

SMALL OUTLINE

Active

Active

5.38

Yes

-

-

-

e3

EAR99

Tin (Sn)

Electrical, Industrial

-

DUAL

GULL WING

not_compliant

AEC-Q101; IEC-60134

R-PDSO-G6

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

-

SWITCHING

Cartridge

-

N-CHANNEL

0.017 Ω

148 A

60 V

64 mJ

METAL-OXIDE SEMICONDUCTOR

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