- Current - Continuous Drain (Id) @ 25℃
- Drain to Source Voltage (Vdss)
- Drive Voltage (Max Rds On, Min Rds On)
- FET Type
- Gate Charge (Qg) (Max) @ Vgs
- Grade
- Input Capacitance (Ciss) (Max) @ Vds
- Mfr
- Mounting Type
- Operating Temperature
- Package
- Package / Case
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pSemi Transistors - FETs, MOSFETs - Arrays
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Mfr | Package | Power Dissipation (Max) | Qualification | RoHS | Operating Temperature | Packaging | Series | Part Status | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ULN2803ADWMRG HANSCHIP semiconductor | In Stock | - | Datasheet | - | - | - | - | - | - | Tape & Reel (TR) | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | ||
 BUK6E4R0-75C,127 NXP Semiconductors | In Stock | - | Datasheet | Through Hole | TO-262-3 Long Leads, I2PAK, TO-262AA | I2PAK | 120A (Tc) | 4.5V, 10V | NXP Semiconductors | - | 306W (Tc) | AEC-Q101 | - | -55°C ~ 175°C (TJ) | Bulk | TrenchMOS™ | Active | N-Channel | 4.2mOhm @ 25A, 10V | 2.8V @ 1mA | 15450 pF @ 25 V | 234 nC @ 10 V | 75 V | ±16V | Automotive |