Filters
  • Gain
  • Package / Case
  • Id - Continuous Drain Current
  • Mounting Styles
  • Operating Frequency
  • Output Power
  • Vds - Drain-Source Breakdown Voltage
  • Minimum Operating Temperature
  • Series
  • Maximum Operating Temperature
  • Transistor Polarity
  • Factory Pack QuantityFactory Pack Quantity

Attribute column

Manufacturer

Qorvo Transistors - FETs, MOSFETs - RF

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13 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Mounting Type

Package / Case

Brand

Factory Pack QuantityFactory Pack Quantity

Forward Transconductance - Min

Id - Continuous Drain Current

Lead Free Status / RoHS Status

Manufacturer

Maximum Drain Gate Voltage

Maximum Operating Temperature

Minimum Operating Temperature

Moisture Sensitive

Mounting Styles

Part # Aliases

Pd - Power Dissipation

Rds On - Drain-Source Resistance

RoHS

Transistor Polarity

Unit Weight

Vds - Drain-Source Breakdown Voltage

Vgs - Gate-Source Breakdown Voltage

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Type

Subcategory

Technology

Current Rating

Actuator Type

Operating Frequency

Number of Channels

Illumination Voltage (Nominal)

Number of Poles

Illumination

Output Power

Breaker Type

Product Type

Transistor Type

Gain

Product Category

629

-

-

-

NI-360

-

25

-

12 A

-

-

-

+ 85 C

- 40 C

Yes

Flange Mount

TGF2929 1123811

144 W

-

Details

N-Channel

2.264236 oz

28 V

-

145 V

- 2.9 V

Tray

TGF2929

-

-

RF Power MOSFET

-

-

-

-

3.5 GHz

-

-

-

-

107 W

-

-

-

14 dB

-

2685

-

-

-

NI-360

-

25

-

12 A

-

-

-

-

-

Yes

-

TGF2929 1123716

144 W

-

Details

N-Channel

-

28 V

-

145 V

- 2.9 V

Tray

TGF2929

-

-

RF Power MOSFET

-

-

-

-

3.5 GHz

-

-

-

-

107 W

-

-

-

14 dB

-

In Stock

-

-

-

QFN-16

-

20

-

250 mA

-

-

-

+ 85 C

- 40 C

Yes

SMD/SMT

TGF3020 1121726

-

-

Details

-

-

32 V

-

-

-

Tray

TGF3020

-

-

-

-

-

-

-

4 GHz to 6 GHz

-

-

-

-

5 W

-

-

-

13 dB

-

QPD1020
QPD1020

Qorvo

19080

-

-

Panel Mount

-

Qorvo

1000

-

-

--

Qorvo

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LEL

Active

--

-

Transistors

GaN-on-SiC

--

Rocker

-

-

--

2

--

-

Magnetic (Hydraulic Delay)

RF JFET Transistors

HEMT

-

RF JFET Transistors

In Stock

-

-

-

0.41 mm x 0.34 mm

-

-

-

-

-

-

-

-

-

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GaAs

-

-

-

-

-

-

-

-

-

-

pHEMT

14 dB

-

In Stock

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

pHEMT

-

-

QPD1425
QPD1425

Qorvo

In Stock

-

-

-

NI-400

-

-

-

19 A

-

-

-

+ 85 C

- 40 C

-

Flange Mount

-

-

-

-

P-Channel

-

65 V

-

-

-

-

-

-

-

-

-

GaN-on-SiC

-

-

2 GHz

-

-

-

-

56.3 dBm

-

-

-

20.6 dB

-

In Stock

-

-

-

DFN-8

-

100

-

100 mA

-

-

-

+ 85 C

- 40 C

Yes

SMD/SMT

QPD1020

30 W

-

Details

N-Channel

0.412264 oz

50 V

-

- 2.8 V

-

Cut Tape

QPD1020

-

-

RF Small Signal MOSFET

-

-

-

-

2.7 GHz to 3.5 GHz

1 Channel

-

-

-

31 W

-

-

-

18.4 dB

-

In Stock

-

-

-

QFN-20

-

20

-

1.8 A

-

-

-

-

-

Yes

SMD/SMT

TGF3021 1121772

-

-

Details

-

0.353163 oz

32 V

-

-

-

-

TGF3021

-

-

-

-

-

-

-

30 MHz to 4 GHz

-

-

-

-

30 W

-

-

-

19.3 dB

-

QPD1025
QPD1025

Qorvo

In Stock

-

-

-

NI-1230-4

-

18

-

28 A

-

-

-

+ 85 C

- 40 C

Yes

Flange Mount

-

685 W

-

Details

Dual N-Channel

-

65 V

-

- 2.8 V

-

Tray

QPD1025

-

-

RF Power MOSFET

-

-

-

-

1 GHz to 1.1 GHz

2 Channel

-

-

-

1.862 kW

-

-

-

22.5 dB

-

QPD0060
QPD0060

Qorvo

In Stock

-

-

-

DFN-6

-

-

-

-

-

-

-

-

- 40 C

-

SMD/SMT

-

-

-

-

-

-

-

-

-

-

-

QPD0060

-

-

-

-

GaN

-

-

1.8 GHz to 3.8 GHz

-

-

-

-

90 W

-

-

-

16.2 dB

-

In Stock

-

-

-

NI-780

-

-

-

19 A

-

-

-

+ 85 C

- 40 C

-

SMD/SMT

-

400 W

-

-

-

-

65 V

-

-

-

-

QPD1028L

-

-

-

-

GaN-on-SiC

-

-

1.2 GHz to 1.4 GHz

-

-

-

-

750 W

-

-

HEMT

19.8 dB

-

In Stock

-

-

-

NI-400

-

-

-

19 A

-

-

-

+ 85 C

- 40 C

-

Flange Mount

-

-

-

-

P-Channel

-

65 V

-

-

-

-

-

-

-

-

-

GaN-on-SiC

-

-

2 GHz

-

-

-

-

56.3 dBm

-

-

-

20.6 dB

-