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  • Pd - Power Dissipation
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  • Rds On - Drain-Source Resistance
  • Technology
  • Transistor Polarity

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Manufacturer

Qorvo Transistors - FETs, MOSFETs - Single

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50 Results

Product

Inventory

Pricing(USD)

Quantity

Datasheet

RoHS

Package / Case

Channel Mode

Id - Continuous Drain Current

Maximum Operating Temperature

Minimum Operating Temperature

Mounting Styles

Pd - Power Dissipation

Qg - Gate Charge

Rds On - Drain-Source Resistance

Transistor Polarity

Vds - Drain-Source Breakdown Voltage

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Series

Technology

Number of Channels

MRF5812LF
MRF5812LF

Qorvo

In Stock

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

UJ4SC075005L8S
UJ4SC075005L8S

Qorvo

In Stock

-

-

MO-229-8

Enhancement

120 A

+ 175 C

- 55 C

SMD/SMT

1.153 kW

164 nC

5 mOhms

N-Channel

750 V

- 20 V, + 20 V

6 V

-

SiC

1 Channel

UF3SC120040B7S
UF3SC120040B7S

Qorvo

488

-

-

D2PAK-7

Enhancement

47 A

+ 175 C

- 55 C

SMD/SMT

214 W

43 nC

35 mOhms

N-Channel

1.2 kV

- 25 V, + 25 V

6 V

UF3SC

SiC

1 Channel

UJ4SC075008L8S
UJ4SC075008L8S

Qorvo

In Stock

-

-

MO-229-8

Enhancement

106 A

+ 175 C

- 55 C

SMD/SMT

600 W

75 nC

8 mOhms

N-Channel

750 V

- 20 V, + 20 V

5.5 V

-

SiC

1 Channel

UF3C170400B7S
UF3C170400B7S

Qorvo

238

-

-

D2PAK-7L

Enhancement

7.6 A

+ 175 C

- 55 C

SMD/SMT

100 W

23.1 nC

400 mOhms

N-Channel

1.2 kV

- 25 V, + 25 V

6 V

-

SiC

1 Channel

UF3C120080K3S
UF3C120080K3S

Qorvo

10300

-

-

-

Enhancement

33 A

+ 175 C

- 55 C

Through Hole

254.2 W

51 nC

100 mOhms

N-Channel

1.2 kV

- 25 V, + 25 V

6 V

-

SiC

1 Channel

UF3C120080K4S
UF3C120080K4S

Qorvo

567

-

-

TO-247-4

Enhancement

33 A

+ 175 C

- 55 C

Through Hole

254.2 W

51 nC

100 mOhms

N-Channel

1.2 kV

- 25 V, + 25 V

6 V

-

SiC

1 Channel

UF4C120053K4S
UF4C120053K4S

Qorvo

443

-

-

TO-247-4

Depletion

34 A

+ 175 C

- 55 C

Through Hole

263 W

37.8 nC

67 mOhms

N-Channel

1.2 kV

- 20 V, + 20 V

6 V

-

SiC

1 Channel

UJ3C120070K3S
UJ3C120070K3S

Qorvo

3400

-

-

TO-247-3

Enhancement

34.5 A

+ 175 C

- 55 C

Through Hole

254.2 W

46 nC

90 mOhms

N-Channel

1.2 kV

- 12 V, + 12 V

6 V

UJ3C

SiC

1 Channel

UF3C120400K3S
UF3C120400K3S

Qorvo

680

-

-

TO-247-3

Enhancement

7.6 A

+ 175 C

- 55 C

Through Hole

100 W

27.5 nC

1.07 Ohms

N-Channel

1.2 kV

- 25 V, + 25 V

6 V

UF3C

SiC

1 Channel

UJ3C065080B3
UJ3C065080B3

Qorvo

549

-

-

D2PAK-3

Enhancement

25 A

+ 175 C

- 55 C

SMD/SMT

115 W

51 nC

100 mOhms

N-Channel

650 V

- 25 V, + 25 V

4 V

UJ3C

SiC

1 Channel

UF3C120040K3S
UF3C120040K3S

Qorvo

536

-

-

TO-247-3

Enhancement

65 A

+ 175 C

- 55 C

Through Hole

429 W

51 nC

45 mOhms

N-Channel

1.2 kV

- 25 V, + 25 V

4 V

UF3C

SiC

1 Channel

UF3C120150K4S
UF3C120150K4S

Qorvo

356

-

-

TO-247-4

Enhancement

18.4 A

+ 175 C

- 55 C

Through Hole

166.7 W

25.7 nC

330 mOhms

N-Channel

1.2 kV

- 25 V, + 25 V

3.5 V

UF3C

SiC

1 Channel

UF3C065080T3S
UF3C065080T3S

Qorvo

1014

-

-

TO-220-3

Enhancement

31 A

+ 175 C

- 55 C

Through Hole

190 W

51 nC

100 mOhms

N-Channel

650 V

- 25 V, + 25 V

4 V

UF3C

SiC

1 Channel

UJ3C120040K3S
UJ3C120040K3S

Qorvo

498

-

-

TO-247-3

Enhancement

65 A

+ 175 C

- 55 C

Through Hole

429 W

51 nC

45 mOhms

N-Channel

1.2 kV

- 25 V, + 25 V

4 V

UJ3C

SiC

1 Channel

UF3SC120009K4S
UF3SC120009K4S

Qorvo

529

-

-

TO-247-4

Enhancement

120 A

+ 175 C

- 55 C

Through Hole

789 W

234 nC

11 mOhms

N-Channel

1.2 kV

- 20 V, + 20 V

4 V

UF3SC

SiC

1 Channel

UF3SC065007K4S
UF3SC065007K4S

Qorvo

363

-

-

TO-247-4

Enhancement

120 A

+ 175 C

- 55 C

Through Hole

789 W

214 nC

9 mOhms

N-Channel

650 V

- 12 V, + 12 V

6 V

UF3SC

SiC

1 Channel

UF3C065080K4S
UF3C065080K4S

Qorvo

120

-

-

TO-247-4

Enhancement

31 A

+ 175 C

- 55 C

Through Hole

190 W

51 nC

100 mOhms

N-Channel

650 V

- 25 V, + 25 V

4 V

UF3C

SiC

1 Channel

UF3C065080B7S
UF3C065080B7S

Qorvo

573

-

-

D2PAK-7

Enhancement

27 A

+ 175 C

- 55 C

SMD/SMT

136.4 W

23 nC

85 mOhms

N-Channel

650 V

- 25 V, + 25 V

6 V

UF3C

SiC

1 Channel

UF3SC065030B7S
UF3SC065030B7S

Qorvo

623

-

-

D2PAK-7

Enhancement

62 A

+ 175 C

- 55 C

SMD/SMT

214 W

43 nC

27 mOhms

N-Channel

650 V

- 25 V, + 25 V

6 V

UF3SC

SiC

1 Channel

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