- Operating Temperature
- Package / Case
- Mounting Type
- Packaging
- Number of Drivers
- Voltage - Supply
- Driver Configuration
- Channel Type
- Gate Type
- Input Type
- Rise / Fall Time (Typ)
- Series
Attribute column
Manufacturer
Renesas PMIC - Gate Drivers
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Driver Configuration | Logic voltage-VIL, VIH | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Input Type | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Negative Supply Voltage-Nom | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | High Side Voltage - Max (Bootstrap) | Height Seated (Max) | Length | Width | RoHS Status |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() ISL89165FRTBZ Renesas Electronics America Inc. | 29 |
| Datasheet | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Low-Side | 1.85V 3.15V | Industrial grade | -40°C~125°C TJ | Tube | - | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89165 | 8 | - | - | Inverting, Non-Inverting | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
![]() HIP2101IR4Z Renesas Electronics America Inc. | 29 |
| Datasheet | 10 Weeks | Surface Mount | 12-VFDFN Exposed Pad | YES | Half-Bridge | 0.8V 2.2V | - | -55°C~150°C TJ | Tube | - | - | e3 | Active | 3 (168 Hours) | 12 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | DUAL | NO LEAD | NOT SPECIFIED | 1 | 12V | 0.5mm | NOT SPECIFIED | HIP2101 | 12 | - | - | Non-Inverting | 10ns 10ns | - | Independent | 2 | 0.056 µs | - | - | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1mm | 4mm | 4mm | ROHS3 Compliant | ||
![]() EL7457CLZ-T13 Renesas Electronics America Inc. | 29 | - | Datasheet | 7 Weeks | Surface Mount | 16-VQFN Exposed Pad | YES | High-Side or Low-Side | 0.8V 2V | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | - | e3 | Active | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~18V | QUAD | NO LEAD | NOT SPECIFIED | 4 | 5V | 0.65mm | NOT SPECIFIED | EL7457 | 16 | S-PQCC-N16 | - | Non-Inverting | 13.5ns 13ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 4 | - | -5V | - | N-Channel, P-Channel MOSFET | 2A 2A | YES | - | - | 1.03mm | - | - | ROHS3 Compliant | ||
![]() ISL89165FBEAZ Renesas Electronics America Inc. | 29 |
| Datasheet | 7 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Low-Side | 1.22V 2.08V | Industrial grade | -40°C~125°C TJ | Tube | 2010 | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89165 | 8 | - | - | Inverting, Non-Inverting | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
![]() ISL6612BECBZ Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Half-Bridge | - | Commercial grade | 0°C~125°C TJ | Tube | - | - | e3 | Obsolete | 3 (168 Hours) | - | - | Matte Tin (Sn) | 7V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6612B | - | - | - | Non-Inverting | 26ns 18ns | FULL BRIDGE BASED MOSFET DRIVER | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | ROHS3 Compliant | ||
![]() ISL6700IR-T Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Surface Mount | 12-VQFN Exposed Pad | YES | Half-Bridge | 0.8V 2.2V | - | -40°C~125°C TJ | Tape & Reel (TR) | - | - | - | Obsolete | 1 (Unlimited) | 12 | - | - | 9V~15V | QUAD | NO LEAD | - | 1 | 12V | 0.8mm | - | ISL6700 | - | - | - | Non-Inverting | 5ns 5ns | FULL BRIDGE BASED MOSFET DRIVER | Independent | 2 | 0.095 μs | - | - | N-Channel MOSFET | 1.4A 1.3A | YES | 0.09 μs | 80V | 1mm | 4mm | 4mm | Non-RoHS Compliant | ||
![]() ISL2110AR4Z Renesas Electronics America Inc. | 29 |
| Datasheet | 6 Weeks | Surface Mount | 12-VFDFN Exposed Pad | YES | Half-Bridge | 3.7V 7.4V | Industrial grade | -40°C~125°C TJ | Tube | 2001 | - | e3 | Active | 2 (1 Year) | 12 | - | MATTE TIN | 8V~14V | DUAL | NO LEAD | NOT SPECIFIED | 1 | 12V | 0.5mm | NOT SPECIFIED | ISL2110 | 12 | - | - | Non-Inverting | 9ns 7.5ns | - | Independent | 2 | 0.06 µs | - | - | N-Channel MOSFET | 3A 4A | YES | 0.06 µs | 114V | 1mm | 4mm | 4mm | ROHS3 Compliant | ||
![]() EL7104CNZ Renesas Electronics America Inc. | In Stock |
| Datasheet | 15 Weeks | Through Hole | 8-DIP (0.300, 7.62mm) | NO | Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Bulk | 2002 | - | e3 | Active | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | - | NOT SPECIFIED | 1 | 15V | 2.54mm | NOT SPECIFIED | EL7104 | 8 | R-PDIP-T8 | - | Non-Inverting | 7.5ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 25 μs | - | 4A | N-Channel, P-Channel MOSFET | 4A 4A | NO | 25 μs | - | 5.334mm | 9.525mm | 7.62mm | ROHS3 Compliant | ||
![]() ISL2101AAR3Z Renesas Electronics America Inc. | 20 |
| Datasheet | 6 Weeks | Surface Mount | 9-VFDFN Exposed Pad | - | Half-Bridge | 1.4V 2.2V | - | -40°C~125°C TJ | Tube | - | - | e3 | Active | 2 (1 Year) | - | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL2101A | 9 | - | - | Non-Inverting | 10ns 10ns | - | Independent | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 114V | - | - | - | ROHS3 Compliant | ||
![]() ISL89165FBEBZ Renesas Electronics America Inc. | 20 |
| Datasheet | 7 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Low-Side | 1.85V 3.15V | Industrial grade | -40°C~125°C TJ | Tube | - | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89165 | 8 | - | - | Inverting, Non-Inverting | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
![]() ISL89165FRTAZ Renesas Electronics America Inc. | 20 |
| Datasheet | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Low-Side | 1.22V 2.08V | - | -40°C~125°C TJ | Tube | - | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89165 | 8 | - | - | Inverting, Non-Inverting | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
![]() ISL89163FRTAZ Renesas Electronics America Inc. | 3000 | - | Datasheet | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Low-Side | 1.22V 2.08V | Industrial grade | -40°C~125°C TJ | Tube | - | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89163 | 8 | - | - | Non-Inverting | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
![]() ISL78444AVEZ-T7A Renesas Electronics America Inc. | 5 |
| Datasheet | 6 Weeks | Surface Mount | 14-TSSOP (0.173, 4.40mm Width) Exposed Pad | - | Half-Bridge | 1V 2.1V | - | -40°C~140°C TJ | Tape & Reel (TR) | - | ISL78444 | - | Active | 3 (168 Hours) | - | - | - | 8V~18V | - | - | - | - | - | - | - | - | 14 | - | - | Non-Inverting | 10ns 10ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 3A 4A | - | - | 100V | - | - | - | ROHS3 Compliant | ||
![]() ISL78424AVEZ-T7A Renesas Electronics America Inc. | 1102 |
| Datasheet | 6 Weeks | Surface Mount | 14-TSSOP (0.173, 4.40mm Width) Exposed Pad | - | Half-Bridge | 1V 2.1V | - | -40°C~140°C TJ | Tape & Reel (TR) | - | ISL78424 | - | Active | 3 (168 Hours) | - | - | - | 8V~18V | - | - | - | - | - | - | - | - | 14 | - | - | Inverting, Non-Inverting | 10ns 10ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 3A 4A | - | - | 100V | - | - | - | ROHS3 Compliant | ||
![]() ISL78434AVEZ-T7A Renesas Electronics America Inc. | 20 |
| Datasheet | 6 Weeks | Surface Mount | 14-TSSOP (0.173, 4.40mm Width) Exposed Pad | - | Half-Bridge | 1V 2.1V | - | -40°C~140°C TJ | Tape & Reel (TR) | - | ISL78434 | - | Active | 3 (168 Hours) | - | - | - | 8V~18V | - | - | - | - | - | - | - | - | 14 | - | - | Inverting, Non-Inverting | 10ns 10ns | - | Independent | 2 | - | - | - | N-Channel MOSFET | 3A 4A | - | - | 100V | - | - | - | ROHS3 Compliant | ||
![]() ISL89164FRTBZ Renesas Electronics America Inc. | 5000 |
| Datasheet | 6 Weeks | Surface Mount | 8-WDFN Exposed Pad | - | Low-Side | 1.85V 3.15V | - | -40°C~125°C TJ | Tube | - | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89164 | 8 | - | - | Inverting | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | ROHS3 Compliant | ||
![]() EL7242CS Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | 0.8V 2.4V | - | -40°C~125°C TJ | Tube | - | - | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | GULL WING | NOT SPECIFIED | 2 | 15V | - | NOT SPECIFIED | EL7242 | 8 | R-PDSO-G8 | - | Inverting, Non-Inverting | 10ns 10ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | - | - | - | - | 3.9116mm | Non-RoHS Compliant | ||
![]() ISL6613BEIBZ Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Half-Bridge | - | Industrial grade | -40°C~125°C TJ | Tube | - | - | e3 | Obsolete | 3 (168 Hours) | - | - | Matte Tin (Sn) | 7V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6613B | - | - | - | Non-Inverting | 26ns 18ns | FULL BRIDGE BASED MOSFET DRIVER | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | ROHS3 Compliant | ||
![]() HIP2101EIBZT Renesas Electronics America Inc. | 20 |
| Datasheet | 13 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | YES | Half-Bridge | 0.8V 2.2V | Industrial grade | -55°C~150°C TJ | Cut Tape (CT) | - | - | e3 | Active | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | DUAL | GULL WING | 260 | 1 | 12V | - | 30 | HIP2101 | 8 | R-PDSO-G8 | Not Qualified | Non-Inverting | 10ns 10ns | - | Independent | 2 | 0.056 µs | - | 2A | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1.68mm | 4.89mm | 3.9mm | ROHS3 Compliant | ||
![]() HIP2101IBZT7A Renesas Electronics America Inc. | 20 |
| Datasheet | 11 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | 0.8V 2.2V | - | -55°C~150°C TJ | Tape & Reel (TR) | - | - | e3 | Active | 1 (Unlimited) | - | - | Matte Tin (Sn) | 9V~14V | - | - | - | - | - | - | - | HIP2101 | 8 | - | - | Non-Inverting | 10ns 10ns | - | Independent | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 114V | - | - | - | ROHS3 Compliant |