- Operating Temperature
- Package / Case
- Mounting Type
- Packaging
- Number of Drivers
- Voltage - Supply
- Driver Configuration
- Channel Type
- Gate Type
- Input Type
- Rise / Fall Time (Typ)
- Series
Attribute column
Manufacturer
Renesas PMIC - Gate Drivers
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Driver Configuration | Logic voltage-VIL, VIH | Usage Level | Operating Temperature | Packaging | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Input Type | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Negative Supply Voltage-Nom | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | High Side Voltage - Max (Bootstrap) | Output Current Flow Direction | Height Seated (Max) | Length | Width | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ISL89401ABZ Renesas Electronics America Inc. | 29 |
| Datasheet | 8 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | 1.4V 2.2V | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Active | 1 (Unlimited) | - | EAR99 | MATTE TIN | 9V~14V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89401 | 8 | - | Non-Inverting | 16ns 16ns | - | Independent | 2 | - | - | - | N-Channel MOSFET | 1.25A 1.25A | - | - | 100V | - | - | - | - | ROHS3 Compliant | ||
 ISL6596CRZ Renesas Electronics America Inc. | In Stock | - | Datasheet | 6 Weeks | Surface Mount | 10-VFDFN Exposed Pad | - | Half-Bridge | - | - | 0°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) - annealed | 4.5V~5.5V | - | - | - | - | - | - | - | ISL6596 | 10 | - | Non-Inverting | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | - 4A | - | - | 36V | - | - | - | - | ROHS3 Compliant | ||
 ISL6613BCRZ Renesas Electronics America Inc. | 29 |
| Datasheet | 7 Weeks | Surface Mount | 10-VFDFN Exposed Pad | - | Half-Bridge | - | - | 0°C~125°C TJ | Tube | 2001 | e3 | Active | 3 (168 Hours) | - | - | MATTE TIN | 7V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6613B | 10 | - | Non-Inverting | 26ns 18ns | FULL BRIDGE BASED MOSFET DRIVER | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | - | ROHS3 Compliant | ||
 ISL6613AEIBZ Renesas Electronics America Inc. | 29 |
| Datasheet | 9 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Half-Bridge | - | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) | 10.8V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6613AE | 8 | - | Non-Inverting | 26ns 18ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | - | ROHS3 Compliant | ||
 ISL2111AR4Z Renesas Electronics America Inc. | 29 |
| Datasheet | 7 Weeks | Surface Mount | 12-VFDFN Exposed Pad | YES | Half-Bridge | 1.4V 2.2V | Industrial grade | -40°C~125°C TJ | Tube | 2001 | e3 | Active | 2 (1 Year) | 12 | - | MATTE TIN | 8V~14V | DUAL | NO LEAD | NOT SPECIFIED | 1 | 12V | 0.5mm | NOT SPECIFIED | ISL2111 | 12 | - | Non-Inverting | 9ns 7.5ns | - | Independent | 2 | 0.06 µs | - | - | N-Channel MOSFET | 3A 4A | YES | 0.06 µs | 114V | - | 1mm | 4mm | 4mm | ROHS3 Compliant | ||
ISL6620ACRZ Renesas Electronics America Inc. | 29 |
| Datasheet | 19 Weeks | Surface Mount | 10-VFDFN Exposed Pad | - | Half-Bridge | - | - | 0°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | - | - | Matte Tin (Sn) - annealed | 4.5V~5.5V | - | - | - | - | - | - | - | ISL6620 | 10 | - | Non-Inverting | 8ns 8ns | AND GATE BASED MOSFET DRIVER | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 36V | - | - | - | - | ROHS3 Compliant | ||
 EL7457CSZ-T13 Renesas Electronics America Inc. | 29 |
| Datasheet | 7 Weeks | Surface Mount | 16-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2V | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | - | e3 | Active | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~18V | DUAL | GULL WING | NOT SPECIFIED | 4 | 5V | 1.27mm | NOT SPECIFIED | EL7457 | 16 | R-PDSO-G16 | Non-Inverting | 13.5ns 13ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 4 | - | -5V | - | N-Channel, P-Channel MOSFET | 2A 2A | YES | - | - | - | 1.879mm | 9.9mm | 3.91mm | ROHS3 Compliant | ||
 EL7156CSZ-T13 Renesas Electronics America Inc. | 22685 |
| Datasheet | 18 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Tape & Reel (TR) | 2002 | e3 | Active | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16.5V | DUAL | GULL WING | NOT SPECIFIED | 1 | 5V | - | NOT SPECIFIED | EL7156 | 8 | R-PDSO-G8 | Non-Inverting | 14.5ns 15ns | HALF BRIDGE BASED PERIPHERAL DRIVER | Single | 1 | - | -5V | 3.5A | IGBT | 3.5A 3.5A | - | - | - | SOURCE SINK | - | 4.9022mm | - | ROHS3 Compliant | ||
 ISL6605IRZ Renesas Electronics America Inc. | 29 |
| Datasheet | 6 Weeks | Surface Mount | 8-VQFN Exposed Pad | YES | Half-Bridge | 1V 2V | - | -40°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | 8 | - | Matte Tin (Sn) | 4.5V~5.5V | QUAD | NO LEAD | NOT SPECIFIED | 1 | 5V | 0.65mm | NOT SPECIFIED | ISL6605 | 8 | S-PQCC-N8 | Non-Inverting | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 2A 2A | YES | - | 33V | - | 1mm | 3mm | 3mm | ROHS3 Compliant | ||
 HIP4083APZ Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Through Hole | 16-DIP (0.300, 7.62mm) | - | High-Side | 1V 2.5V | - | -40°C~150°C TJ | Tube | - | - | Obsolete | 1 (Unlimited) | - | - | - | 7V~15V | - | - | - | - | - | - | - | HIP4083 | - | - | Inverting | 35ns 30ns | HALF BRIDGE BASED MOSFET DRIVER | 3-Phase | 3 | - | - | - | N-Channel MOSFET | - | - | - | 95V | - | - | - | - | ROHS3 Compliant | ||
 EL7252CN Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Through Hole | 8-DIP (0.300, 7.62mm) | - | Low-Side | 0.8V 2.4V | - | -40°C~125°C TJ | Tube | - | - | Obsolete | 1 (Unlimited) | - | EAR99 | - | 4.5V~16V | - | - | - | - | - | - | - | EL7252 | - | - | Inverting | 10ns 10ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | - | Non-RoHS Compliant | ||
 HIP2101EIB Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | YES | Half-Bridge | 0.8V 2.2V | - | -55°C~150°C TJ | Tube | - | - | Obsolete | 2 (1 Year) | 8 | EAR99 | - | 9V~14V | DUAL | GULL WING | - | 1 | 12V | - | - | HIP2101 | 8 | R-PDSO-G8 | Non-Inverting | 10ns 10ns | - | Independent | 2 | 0.056 µs | - | - | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | - | 1.68mm | 4.89mm | 3.9mm | Non-RoHS Compliant | ||
 ISL6700IRZ Renesas Electronics America Inc. | In Stock | - | Datasheet | - | Surface Mount | 12-VQFN Exposed Pad | YES | Half-Bridge | 0.8V 2.2V | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Obsolete | 3 (168 Hours) | 12 | - | Matte Tin (Sn) | 9V~15V | QUAD | NO LEAD | NOT SPECIFIED | 1 | 12V | 0.8mm | NOT SPECIFIED | ISL6700 | - | - | Non-Inverting | 5ns 5ns | FULL BRIDGE BASED MOSFET DRIVER | Independent | 2 | 0.095 μs | - | - | N-Channel MOSFET | 1.4A 1.3A | YES | 0.09 μs | 80V | - | 1mm | 4mm | 4mm | ROHS3 Compliant | ||
ISL2101AABZ Renesas Electronics America Inc. | 20 |
| Datasheet | 9 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | 1.4V 2.2V | - | -40°C~125°C TJ | Tube | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL2101A | 8 | - | Non-Inverting | 10ns 10ns | - | Independent | 2 | - | - | - | N-Channel MOSFET | 2A 2A | - | - | 114V | - | - | - | - | ROHS3 Compliant | ||
ISL89163FBEAZ Renesas Electronics America Inc. | 20 |
| Datasheet | 7 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | Low-Side | 1.22V 2.08V | Industrial grade | -40°C~125°C TJ | Tube | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) | 4.5V~16V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89163 | 8 | - | Non-Inverting | 20ns 20ns | AND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel MOSFET | 6A 6A | - | - | - | - | - | - | - | ROHS3 Compliant | ||
ISL6622CBZ-T Renesas Electronics America Inc. | 2259 |
| Datasheet | 15 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Half-Bridge | - | Commercial grade | 0°C~125°C TJ | Tape & Reel (TR) | - | e3 | Active | 1 (Unlimited) | - | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | - | - | - | - | - | - | - | ISL6622 | 8 | - | Non-Inverting | 26ns 18ns | AND GATE BASED MOSFET DRIVER | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | - | ROHS3 Compliant | ||
ISL6609AIRZ Renesas Electronics America Inc. | 20 |
| Datasheet | 4 Weeks | Surface Mount | 8-VQFN Exposed Pad | YES | Half-Bridge | 1V 2V | - | -40°C~125°C TJ | Tube | - | e3 | Active | 3 (168 Hours) | 8 | EAR99 | MATTE TIN | 4.5V~5.5V | QUAD | NO LEAD | NOT SPECIFIED | 1 | 5V | 0.65mm | NOT SPECIFIED | ISL6609 | 8 | S-PQCC-N8 | Non-Inverting | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | - 4A | YES | - | 36V | - | 1mm | 3mm | 3mm | ROHS3 Compliant | ||
ISL89410IBZ Renesas Electronics America Inc. | 1940 |
| Datasheet | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | Low-Side | 0.8V 2.4V | Industrial grade | -40°C~125°C TJ | Bulk | - | e3 | Active | 3 (168 Hours) | - | EAR99 | MATTE TIN | 4.5V~18V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL89410 | 8 | - | Non-Inverting | 7.5ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | - | - | - | N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | - | ROHS3 Compliant | ||
ISL6594ACRZ Renesas Electronics America Inc. | 29 |
| Datasheet | 6 Weeks | Surface Mount | 10-VFDFN Exposed Pad | - | Half-Bridge | - | Commercial grade | 0°C~125°C TJ | Tube | - | e3 | Active | 2 (1 Year) | - | - | MATTE TIN | 10.8V~13.2V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6594 | 10 | - | Non-Inverting | 26ns 18ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | 1.25A 2A | - | - | 36V | - | - | - | - | ROHS3 Compliant | ||
ISL6596CRZ-T Renesas Electronics America Inc. | 12000 | - | Datasheet | 5 Weeks | Surface Mount | 10-VFDFN Exposed Pad | - | Half-Bridge | - | Commercial grade | 0°C~125°C TJ | Tape & Reel (TR) | - | e3 | Active | 3 (168 Hours) | - | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | - | - | NOT SPECIFIED | - | - | - | NOT SPECIFIED | ISL6596 | 10 | - | Non-Inverting | 8ns 8ns | - | Synchronous | 2 | - | - | - | N-Channel MOSFET | - 4A | - | - | 36V | - | - | - | - | ROHS3 Compliant |