- Part Status
- Automotive
- PPAP
- Organization
- Pin Count
- ECCN (US)
- EU RoHS
- Chip Density (bit)
- Mounting
- PCB changed
- Supplier Package
- Typical Operating Supply Voltage (V)
Attribute column
Manufacturer
Samsung Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Manufacturer Package Identifier | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Height | Length | Width | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 K4B4G1646E-BYMA Samsung | 224 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
K4B4G1646E-BCMA Samsung | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
K4B1G1646G-BCH9 Samsung | 906 | - | - | - | YES | - | 96 | - | 0.255 ns | 667 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4B1G1646G-BCH9 | - | 3 | 67108864 words | 64000000 | - | - | PLASTIC/EPOXY | FBGA | FBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | NOT SPECIFIED | 8.58 | - | Yes | 1.5 V | - | e1 | Yes | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | - | - | DRAMs | CMOS | BOTTOM | BALL | 225 | - | 0.8 mm | compliant | - | - | R-PBGA-B96 | Not Qualified | - | - | 1.5 V | - | - | - | - | - | - | - | - | - | 0.17 mA | - | 64MX16 | 3-STATE | - | 16 | - | - | 0.01 A | 1073741824 bit | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | - | - | - | - | - | - | ||
K4B2G1646F-BYMA Samsung | 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
K4S561632J-UC75 Samsung | 1 | - | - | Surface Mount | YES | 54 | 54 | TSOP(II)54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S561632J-UC75 | SDRAM | 2 | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP | - | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | NOT SPECIFIED | 5.65 | Compliant | Yes | 3.3 V | Tape and Reel | e6 | Yes | - | Tin/Bismuth (Sn97Bi3) | 70 °C | 0 °C | - | - | DRAMs | CMOS | DUAL | GULL WING | 260 | - | 0.8 mm | unknown | 133 MHz | - | R-PDSO-G54 | Not Qualified | 3.3 V | - | 3.3 V | COMMERCIAL | - | Parallel | 3.6 V | 3 V | 32 MB | - | 110 mA | - | 0.12 mA | 7.5 ns | 16MX16 | 3-STATE | - | 16 | 15 b | 256 Mb | 0.002 A | 268435456 bit | 133 MHz | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | - | - | 1.2 mm | - | - | Lead Free | ||
K4B2G0846D-HCH9 Samsung | 600 | - | - | - | YES | - | 78 | - | 0.255 ns | 667 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4B2G0846D-HCH9 | - | - | 268435456 words | 256000000 | 85 °C | - | PLASTIC/EPOXY | FBGA | FBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | - | 5.79 | - | Yes | 1.5 V | - | - | - | - | - | - | - | - | - | DRAMs | CMOS | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B78 | Not Qualified | - | - | 1.5 V | OTHER | - | - | - | - | - | - | - | - | 0.135 mA | - | 256MX8 | 3-STATE | - | 8 | - | - | 0.012 A | 2147483648 bit | - | COMMON | DDR DRAM | 8192 | 8 | 8 | - | - | - | - | - | - | ||
K4S281632I-UC75 Samsung | 23 | - | - | - | YES | - | 54 | - | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S281632I-UC75 | - | 3 | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | NOT SPECIFIED | 8.33 | - | Yes | 3.3 V | - | e6 | Yes | - | Tin/Bismuth (Sn97Bi3) | - | - | AUTO/SELF REFRESH | - | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | - | - | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | - | 1 | - | SYNCHRONOUS | 0.2 mA | - | 8MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.002 A | 134217728 bit | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - | ||
K4S641632K-UC75 Samsung | 21 | - | - | - | YES | - | 54 | - | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S641632K-UC75 | - | 3 | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | - | 5.79 | - | Yes | 3.3 V | - | e6 | Yes | EAR99 | Tin/Bismuth (Sn97Bi3) | - | - | AUTO/SELF REFRESH | - | DRAMs | CMOS | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | - | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | - | 1 | - | SYNCHRONOUS | 0.085 mA | - | 4MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.001 A | 67108864 bit | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - | ||
K4S281632F-UC75 Samsung | 18 | - | - | - | YES | - | 54 | - | 6 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S281632F-UC75 | - | 3 | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | NOT SPECIFIED | 8.4 | - | Yes | 3.3 V | - | e6 | Yes | EAR99 | Tin/Bismuth (Sn97Bi3) | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | - | - | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | - | 1 | - | SYNCHRONOUS | 0.2 mA | - | 8MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.002 A | 134217728 bit | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - | ||
K4S643232H-UC60 Samsung | 3 | - | - | - | YES | - | 86 | - | 5.5 ns | 166 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S643232H-UC60 | - | 3 | 2097152 words | 2000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | - | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | 40 | 5.52 | - | Yes | 3.3 V | - | e6 | - | - | Tin/Bismuth (Sn97Bi3) | - | - | - | - | DRAMs | CMOS | DUAL | GULL WING | 260 | - | 0.5 mm | unknown | - | - | R-PDSO-G86 | Not Qualified | - | - | 3.3 V | COMMERCIAL | - | - | - | - | - | - | - | - | 0.15 mA | - | 2MX32 | 3-STATE | - | 32 | - | - | 0.002 A | 67108864 bit | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | - | ||
K4H561638H-UCB3 Samsung | 23 | - | - | - | YES | - | 66 | - | 0.7 ns | 166 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H561638H-UCB3 | - | 3 | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | - | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | 40 | 5.79 | Compliant | Yes | 2.3 V | - | e6 | Yes | - | Tin/Bismuth (Sn97Bi3) | - | - | - | - | DRAMs | CMOS | DUAL | GULL WING | 260 | - | 0.635 mm | unknown | 166 MHz | - | R-PDSO-G66 | Not Qualified | - | - | 2.3 V | COMMERCIAL | - | - | - | - | - | - | - | - | 0.33 mA | - | 16MX16 | 3-STATE | - | 16 | - | - | 0.003 A | 268435456 bit | - | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | - | - | - | - | - | Lead Free | ||
K4T51163QJ-BCE7 Samsung | 210 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
K4H561638H-UCCC Samsung | 171 | - | - | - | YES | - | 66 | - | 0.65 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H561638H-UCCC | - | 3 | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | - | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | NOT SPECIFIED | 5.8 | - | Yes | 2.5 V | - | e6 | Yes | - | Tin/Bismuth (Sn97Bi3) | - | - | - | - | DRAMs | CMOS | DUAL | GULL WING | 260 | - | 0.635 mm | unknown | - | - | R-PDSO-G66 | Not Qualified | - | - | 2.5 V | COMMERCIAL | - | - | - | - | - | - | - | - | 0.35 mA | - | 16MX16 | 3-STATE | - | 16 | - | - | 0.004 A | 268435456 bit | - | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | - | - | - | - | - | - | ||
K4S561632E-UC75 Samsung | 2 | - | - | - | YES | - | 54 | - | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S561632E-UC75 | - | 3 | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | NOT SPECIFIED | 5.66 | - | Yes | 3.3 V | - | e6 | Yes | - | Tin/Bismuth (Sn96Bi4) | - | - | AUTO/SELF REFRESH | - | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | - | - | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | - | 1 | - | SYNCHRONOUS | 0.18 mA | - | 16MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.002 A | 268435456 bit | - | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - | ||
K4S281632O-LI75T00 Samsung Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
K4H511638D-UCCC Samsung | 2300 | - | - | - | YES | - | 66 | - | 0.65 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H511638D-UCCC | - | 3 | 33554432 words | 32000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | - | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | NOT SPECIFIED | 5.81 | - | Yes | 2.6 V | - | e6 | Yes | - | Tin/Bismuth (Sn97Bi3) | - | - | - | - | DRAMs | CMOS | DUAL | GULL WING | 260 | - | 0.635 mm | unknown | - | - | R-PDSO-G66 | Not Qualified | - | - | 2.6 V | COMMERCIAL | - | - | - | - | - | - | - | - | 0.4 mA | - | 32MX16 | 3-STATE | - | 16 | - | - | 0.005 A | 536870912 bit | - | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | - | - | - | - | - | - | ||
K4S281632I-UI75 Samsung | 196 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
K4H511638D-UCB3 Samsung | 1000 | - | - | - | YES | - | 66 | - | 0.7 ns | 166 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4H511638D-UCB3 | - | 2 | 33554432 words | 32000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | - | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | NOT SPECIFIED | 5.82 | - | Yes | 2.5 V | - | e6 | Yes | - | Tin/Bismuth (Sn97Bi3) | - | - | - | - | DRAMs | CMOS | DUAL | GULL WING | 260 | - | 0.635 mm | unknown | - | - | R-PDSO-G66 | Not Qualified | - | - | 2.5 V | COMMERCIAL | - | - | - | - | - | - | - | - | 0.38 mA | - | 32MX16 | 3-STATE | - | 16 | - | - | 0.005 A | 536870912 bit | - | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | - | - | - | - | - | - | ||
K4S281632K-UC60 Samsung | 117 | - | - | - | YES | - | 54 | - | 5 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S281632K-UC60 | - | 3 | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | NOT SPECIFIED | 5.72 | - | Yes | 3.3 V | - | - | Yes | EAR99 | - | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | COMMERCIAL | 3 V | - | - | - | - | 1 | - | SYNCHRONOUS | 0.22 mA | - | 8MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.002 A | 134217728 bit | - | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - | ||
K4S561632J-UI75 Samsung | 1457 | - | - | - | YES | - | 54 | - | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4S561632J-UI75 | - | 3 | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | NOT SPECIFIED | 5.82 | - | Yes | 3.3 V | - | e6 | Yes | - | Tin/Bismuth (Sn97Bi3) | - | - | AUTO/SELF REFRESH | - | DRAMs | CMOS | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | - | - | R-PDSO-G54 | Not Qualified | - | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | - | - | 1 | - | SYNCHRONOUS | 0.18 mA | - | 16MX16 | 3-STATE | 1.2 mm | 16 | - | - | 0.002 A | 268435456 bit | - | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | 22.22 mm | 10.16 mm | - |