- Diode Type
- Part Status
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Configuration
- Number of Elements
- Diode Element Material
- Terminal Form
- Mounting Type
- Output Current-Max
- Pin Count
- Reach Compliance Code
Attribute column
Manufacturer
Semtech Diodes - Bridge Rectifiers
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Material | Diode Element Material | Number of Terminals | Automotive | Base Product Number | ECCN (US) | EU RoHS | Forward Voltage-Max (VF) | HTS | Ihs Manufacturer | Lead Shape | Manufacturer | Manufacturer Part Number | Maximum Continuous Forward Current (A) | Maximum DC Reverse Voltage (V) | Maximum Operating Temperature (°C) | Mfr | Minimum Operating Temperature (°C) | Moisture Sensitivity Levels | Mounting | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | Peak Forward Voltage (V) | Peak Non-Repetitive Surge Current (A) | Peak Reverse Current (uA) | Peak Reverse Recovery Time (ns) | Peak Reverse Repetitive Voltage (V) | PPAP | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Standard Package Name | Supplier Package | Supplier Temperature Grade | Operating Temperature | Packaging | Series | Tolerance | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Type | Terminal Finish | Applications | Additional Feature | HTS Code | Subcategory | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Case Connection | Operating Temperature - Junction | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Non-rep Pk Forward Current-Max | Reverse Current-Max | Reverse Recovery Time-Max | Reverse Recovery Time (trr) | Diameter |
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 JANTX1N6073 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | - | EAR99 | Not Compliant | 1.2 V | 8541.10.00.80 | SEMTECH CORP | Through Hole | Semtech Corporation | JANTX1N6073 | 3 | 50 | 150 | Semtech Corporation | -65 | - | Through Hole | 1 | 150 °C | - | Bulk | UNSPECIFIED | HERMETIC SEALED, G5, 2 PIN | - | 4.2(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.2@1.5A | 35 | 1 | 30 | 50 | No | Discontinued at Digi-Key | - | 1.47 | - | - | Case G-5 | Case G-5 | Military | - | - | * | - | - | - | Active | EAR99 | Switching Diode | - | - | - | 8541.10.00.80 | Rectifier Diodes | AXIAL | WIRE | - | unknown | 2 | MIL-19500/503 | O-XALF-W2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1 µA @ 50 V | 1.2 V @ 1.5 A | ISOLATED | -65°C ~ 150°C | 0.85 A | 50 V | 1.8A | - | 50 V | - | 28pF @ 5V, 1MHz | - | - | 0.03 µs | 30 ns | 1.8(Max) | ||
JANTXM19500/483-02 Semtech Corporation | In Stock | - | - | - | - | NO | - | - | SILICON | 5 | - | - | - | - | - | - | SEMTECH CORP | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | METAL | - | - | - | RECTANGULAR | FLANGE MOUNT | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.80 | - | DUAL | UNSPECIFIED | - | unknown | - | MIL-19500/483B | R-MDFM-X5 | Not Qualified | BRIDGE, 6 ELEMENTS | - | BRIDGE RECTIFIER DIODE | - | - | ISOLATED | - | 25 A | - | - | 3 | - | - | - | 150 A | - | - | - | - | ||
1N3595JANTXV Semtech Corporation | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
SC3BJ4F Semtech Corporation | In Stock | - | Datasheet | - | - | NO | - | - | SILICON | 5 | - | - | - | - | 1.2 V | - | SEMTECH CORP | - | - | - | - | - | - | - | - | - | - | 6 | 150 °C | - | - | METAL | METAL, G36, 5 PIN | - | - | RECTANGULAR | FLANGE MOUNT | - | Transferred | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOW LEAKAGE CURRENT | 8541.10.00.80 | - | UPPER | UNSPECIFIED | - | unknown | 5 | - | R-MUFM-X5 | Not Qualified | BRIDGE, 6 ELEMENTS | - | BRIDGE RECTIFIER DIODE | - | - | - | - | 1.5 A | - | - | 3 | 400 V | - | - | 15 A | - | 0.15 µs | - | - | ||
JANTXV1N5415 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | 1N5415 | EAR99 | Supplier Unconfirmed | 1.1 V | 8504.40.95.70 | SEMTECH CORP | - | Semtech Corporation | JANTXV1N5415 | 4.5 | 50 | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | 175 °C | -65 °C | Bulk | UNSPECIFIED | HERMETIC SEALED, G4, 2 PIN | - | 4.32(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.1@3A | 150 | 1 | 150 | 50 | No | Discontinued at Digi-Key | - | 5.2 | Non-Compliant | - | - | Case G-4 | Military | - | Bulk|Tape and Reel | * | - | - | - | Active | - | Switching Diode | - | FAST SOFT RECOVERY | - | 8541.10.00.80 | Rectifier Diodes | AXIAL | WIRE | - | unknown | 2 | MIL-19500 | O-XALF-W2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1 µA @ 50 V | 1.1 V @ 3 A | ISOLATED | - | 4.5 A | 50 V | 4.5A | 1 | 50 V | - | 550pF @ 4V, 1MHz | 150 A | 1 µA | 0.15 µs | 150 ns | 4.57(Max) | ||
JANTXV1N5620 Semtech | In Stock | - | - | - | - | NO | - | - | SILICON | 2 | No | 1N5620 | EAR99 | Supplier Unconfirmed | 1.2 V | 8541.10.00.80 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JANTXV1N5620 | 2 | 800 | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | 175 °C | -65 °C | Bulk | GLASS | E-LALF-W2 | - | 4.2(Max) | ELLIPTICAL | LONG FORM | - | Active | - | 2 | 1.1@1A | 30 | 0.5 | 2000 | 800 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.25 | - | No | - | Case G-2 | Military | - | - | * | - | e0 | No | Active | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | Rectifier Diodes | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500 | E-LALF-W2 | Qualified | Single | - | RECTIFIER DIODE | - | - | ISOLATED | - | 1 A | - | - | - | 800 V | - | - | 50 A | - | 2 µs | - | 2.8(Max) | ||
JANTX1N3957 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | - | 8541.10.00.80 | MICROSEMI CORP | - | Microsemi Corporation | JANTX1N3957 | 1@Ta=100C | 1000 | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | 175 °C | -65 °C | Bulk | GLASS | HERMETIC SEALED, GLASS, A-TYPE PACKAGE-2 | - | 4.2(Max) | ROUND | LONG FORM | - | Active | DO-41 | 2 | 1.1 | 30 | 0.5 | 2000 | 1000 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.48 | Non-Compliant | No | - | Case G-2 | Military | - | Bulk|Tape and Reel | * | - | e0 | No | Active | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY | 8541.10.00.80 | - | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LALF-W2 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 500 nA @ 1000 V | 1.1 V @ 1 A | ISOLATED | -65°C ~ 175°C | 1 A | 1000 V | 1A | - | 1000 V | DO-41 | - | - | - | - | 2 µs | 2.8(Max) | ||
JANTXV1N5420 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | 1N5420 | EAR99 | Supplier Unconfirmed | - | 8504.40.95.70 | MICROSEMI CORP | - | Microsemi Corporation | JANTXV1N5420 | 4.5 | 600 | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | - | - | Bulk | UNSPECIFIED | O-XALF-W2 | - | 4.32(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.1@3A | 150 | 1 | 400 | 600 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.82 | Non-Compliant | No | - | Case G-4 | Military | - | Bulk|Tape and Reel | * | - | e0 | - | Active | - | Switching Diode | Tin/Lead (Sn/Pb) | FAST RECOVERY POWER | - | 8541.10.00.80 | - | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500/411L | O-XALF-W2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1 µA @ 600 V | 1.1 V @ 3 A | ISOLATED | - | 3 A | 600 V | 4.5A | 1 | - | - | 120pF @ 4V, 1MHz | 80 A | - | 0.4 µs | 400 ns | 4.57(Max) | ||
JANTXV1N6643US Semtech | In Stock | - | - | Through Hole | Axial | - | Axial | - | - | - | No | - | EAR99 | - | - | 8504.40.95.70 | - | - | - | - | 0.3@Ta=75C | 75 | 175 | Semtech Corporation | -65 | - | Surface Mount | - | - | - | Bulk | - | - | 2.16(Max) | 4.95(Max) | - | - | 2.16(Max) | - | - | 2 | 1.2@0.1A | 2.5 | 0.5 | 6 | 50 | No | Discontinued at Digi-Key | - | - | - | - | MELF | MELF | Military | - | - | * | - | - | - | Active | - | Switching Diode | - | - | - | - | - | - | - | - | - | 2 | - | - | - | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500 nA @ 50 V | 1.2 V @ 100 mA | - | -65°C ~ 175°C | - | 50 V | 300mA | - | - | - | - | - | - | - | 6 ns | - | ||
JANTX1N6078 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | 18 V | 8541.10.00.80 | SEMTECH CORP | Through Hole | Semtech Corporation | JANTX1N6078 | 6 | 150 | 150 | Semtech Corporation | -65 | - | Through Hole | 1 | 150 °C | - | Bulk | UNSPECIFIED | HERMETIC SEALED, G102, 2 PIN | - | 4.2(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.2@3A | 70 | 5 | 30 | 150 | No | Discontinued at Digi-Key | - | 1.51 | - | - | Case G-102 | Case G-102 | Military | - | - | * | - | - | - | Active | EAR99 | Switching Diode | - | SUPER FAST SOFT RECOVERY | - | 8541.10.00.80 | Rectifier Diodes | AXIAL | WIRE | - | unknown | 2 | MIL-19500/503 | O-XALF-W2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 5 µA @ 150 V | 1.2 V @ 3 A | ISOLATED | -65°C ~ 150°C | 1.3 A | 150 V | 3.1A | 1 | 150 V | - | 60pF @ 5V, 1MHz | 70 A | - | 0.03 µs | 30 ns | 2.8(Max) | ||
JANTXV1N5419 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | 1N5419 | EAR99 | Supplier Unconfirmed | - | 8504.40.95.70 | MICROSEMI CORP | - | Microsemi Corporation | JANTXV1N5419 | 4.5 | 500 | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | - | - | Bulk | UNSPECIFIED | SIMILAR TO DO-41, 2 PIN | - | 4.32(Max) | ROUND | LONG FORM | - | Active | DO-41 | 2 | 1.1@3A | 150 | 1 | 250 | 500 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.89 | - | No | - | Case G-4 | - | - | - | * | - | e0 | - | Active | - | Switching Diode | Tin/Lead (Sn/Pb) | FAST RECOVERY POWER | - | 8541.10.00.80 | - | AXIAL | WIRE | NOT SPECIFIED | not_compliant | 2 | MIL-19500/411L | O-XALF-W2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1 µA @ 500 V | 1.1 V @ 3 A | ISOLATED | - | 3 A | 500 V | 4.5A | 1 | 500 V | - | 140pF @ 4V, 1MHz | 80 A | - | 0.25 µs | 250 ns | 4.57(Max) | ||
JANS1N5623 Semtech | In Stock | - | - | - | - | - | - | - | - | - | No | - | - | Supplier Unconfirmed | - | 8541.10.00.80 | - | - | - | - | 2 | 1000 | 175 | - | -65 | - | Through Hole | - | - | - | - | - | - | - | 5.21(Max) | - | - | - | - | - | 2 | 1.2@1A | 25 | 0.5 | 500 | 1000 | No | - | - | - | - | - | - | - | Military | - | - | - | - | - | - | - | - | Switching Diode | - | - | - | - | - | - | - | - | - | 2 | - | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.79(Max) | ||
JANS1N5615 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | 1.2 V | 8541.10.00.80 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JANS1N5615 | 2 | 200 | 175 | Semtech Corporation | -65 | 1 | Through Hole | 1 | 200 °C | - | Bulk | GLASS | E-LALF-W2 | - | 5.21(Max) | ELLIPTICAL | LONG FORM | - | Active | DO-7 | 2 | 1.2@1A | 25 | 0.5 | 150 | 200 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.22 | - | No | - | - | Military | - | - | - | - | e0 | No | - | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY | 8541.10.00.80 | Rectifier Diodes | AXIAL | WIRE | 225 | compliant | 2 | MIL-19500 | E-LALF-W2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500 nA @ 200 V | 1.2 V @ 1 A | ISOLATED | -65°C ~ 175°C | 1 A | 200 V | 2A | - | 200 V | DO-7 | 27pF @ 5V, 1MHz | 50 A | - | 0.15 µs | 150 ns | 2.79(Max) | ||
JANTXV1N4246 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | Si | SILICON | 2 | No | 1N4246 | EAR99 | Supplier Unconfirmed | - | 8504.40.95.70 | MICROSEMI CORP | Through Hole | Microsemi Corporation | JANTXV1N4246 | 1@Ta=55C | - | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | 175 °C | -65 °C | Bulk | GLASS | O-LALF-W2 | - | 4.19(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.2 | 30 | 1 | 2000 | 400 | No | Discontinued at Digi-Key | NOT SPECIFIED | 2.47 | - | No | - | - | Military | - | - | * | - | e0 | No | Active | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY | 8541.10.00.80 | - | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500 | O-LALF-W2 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 400 V | 1.2 V @ 1 A | ISOLATED | - | 1 A | 400 V | 1A | - | 400 V | - | - | - | - | 5 µs | 2 µs | 2.79(Max) | ||
JANTXV1N5551US Semtech | In Stock | - | - | Surface Mount | SQ-MELF | YES | - | - | SILICON | 2 | No | - | EAR99 | Not Compliant | 1.2 V | 8504.40.95.70 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JANTXV1N5551US | 5 | 400 | 175 | Semtech Corporation | -65 | - | Surface Mount | 1 | 175 °C | -65 °C | Bulk | GLASS | O-LELF-R2 | 4.72(Max) | 6.99(Max) | ROUND | LONG FORM | 4.72(Max) | Active | MELF | 2 | 1@3A | 150 | 1 | 2000 | 400 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.29 | - | No | - | - | Military | - | - | * | - | e0 | No | Active | - | Switching Diode | Tin/Lead (Sn/Pb) | GENERAL PURPOSE | - | 8541.10.00.80 | Rectifier Diodes | END | WRAP AROUND | NOT SPECIFIED | compliant | 2 | MIL | O-LELF-R2 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 400 V | 1 V @ 3 A | ISOLATED | - | 3 A | 400 V | 5A | 1 | 400 V | - | 92pF @ 5V, 1MHz | 150 A | 1 µA | 2 µs | 2 µs | - | ||
JANTXV1N5554US Semtech | In Stock | - | - | Surface Mount | SQ-MELF | YES | - | - | SILICON | 2 | No | - | EAR99 | Not Compliant | - | 8504.40.95.70 | MICROSEMI CORP | - | Microsemi Corporation | JANTXV1N5554US | 5 | 1000 | 175 | Semtech Corporation | -65 | - | Surface Mount | 1 | - | - | Bulk | GLASS | GLASS PACKAGE-2 | 4.72(Max) | 6.99(Max) | ROUND | LONG FORM | 4.72(Max) | Active | - | 2 | 1@3A | 150 | 1 | 2000 | 1000 | No | Discontinued at Digi-Key | 20 | 5.41 | - | No | - | - | Military | - | - | * | - | e0 | - | Active | - | Switching Diode | Tin/Lead (Sn/Pb) | POWER | - | 8541.10.00.80 | - | END | WRAP AROUND | 235 | compliant | 2 | MIL-19500/420G | O-LELF-R2 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 1000 V | 1 V @ 3 A | ISOLATED | - | 3 A | 1000 V | 5A | 1 | - | - | 92pF @ 5V, 1MHz | 100 A | - | - | 2 µs | - | ||
JANTXV1N4948 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | - | SILICON | 2 | No | - | EAR99 | - | 1.2 V | 8504409580 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JANTXV1N4948 | 2@Ta=55C | 1000 | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | 175 °C | -65 °C | Bulk | GLASS | E-LALF-W2 | - | 4.2(Max) | ELLIPTICAL | LONG FORM | - | Active | - | 2 | 1.2@1A | 25 | 0.5 | 500 | 1000 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.36 | - | No | - | Case G-2 | Military | - | Bulk|Tape and Reel | MIL-PRF-19500/359 | - | - | No | Active | EAR99 | Switching Diode | - | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | Rectifier Diodes | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500 | E-LALF-W2 | Qualified | Single | - | RECTIFIER DIODE | 500 nA @ 1000 V | 1.2 V @ 1 A | ISOLATED | - | 1 A | - | - | - | 1000 V | - | - | - | - | 5 µs | - | 2.8(Max) | ||
JANS1N5554US Semtech | In Stock | - | - | Surface Mount | SQ-MELF | YES | - | - | SILICON | 2 | No | - | EAR99 | Not Compliant | - | 8541.10.00.80 | MICROSEMI CORP | - | Microsemi Corporation | JANS1N5554US | 5 | 1000 | 175 | Semtech Corporation | -65 | - | Surface Mount | 1 | - | - | Bulk | GLASS | GLASS PACKAGE-2 | 4.72(Max) | 6.99(Max) | ROUND | LONG FORM | 4.72(Max) | Active | - | 2 | 1@3A | 150 | 1 | 2000 | 1000 | No | Discontinued at Digi-Key | - | 2.02 | - | No | - | - | Military | - | - | MIL-PRF-19500/420 | - | e0 | - | Active | - | Switching Diode | Tin/Lead (Sn/Pb) | POWER | - | 8541.10.00.80 | - | END | WRAP AROUND | - | not_compliant | 2 | MIL-19500/420G | O-LELF-R2 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 1000 V | 1 V @ 3 A | ISOLATED | - | 3 A | 1000 V | 5A | 1 | - | - | 92pF @ 5V, 1MHz | 100 A | - | - | 2 µs | - | ||
JANS1N6638 Semtech | In Stock | - | - | Through Hole | Axial | - | Axial | - | - | - | No | - | EAR99 | - | - | - | - | Through Hole | - | - | - | - | - | Semtech Corporation | - | - | Through Hole | - | - | - | Bulk | - | - | - | 4.57(Max) | - | - | - | - | - | 2 | - | - | - | - | - | No | Discontinued at Digi-Key | - | - | - | - | DO-204-AH | DO-35 | - | - | - | MIL-PRF-19500/578 | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500 nA @ 125 V | 1.1 V @ 200 mA | - | -65°C ~ 175°C | - | 125 V | 300mA | - | - | - | - | - | - | - | 4.5 ns | 2.03(Max) | ||
JANTXV1N4249 Semtech | In Stock | - | - | Through Hole | Axial | NO | Axial | Si | SILICON | 2 | No | 1N4249 | EAR99 | Supplier Unconfirmed | 1.2 V | 8504.40.95.70 | SENSITRON SEMICONDUCTOR | Through Hole | Sensitron Semiconductors | JANTXV1N4249 | 1@Ta=55C | - | 175 | Semtech Corporation | -65 | - | Through Hole | 1 | 160 °C | - | Bulk | GLASS | E-LALF-W2 | - | 4.19(Max) | ELLIPTICAL | LONG FORM | - | Active | - | 2 | 1.2 | 30 | 1 | 2000 | 1000 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.15 | Non-Compliant | No | - | - | Military | - | - | * | - | e0 | No | Active | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | - | 8541.10.00.80 | Rectifier Diodes | AXIAL | WIRE | NOT SPECIFIED | compliant | 2 | MIL-19500/286 | E-LALF-W2 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 1000 V | 1.2 V @ 1 A | ISOLATED | - | 1 A | 1000 V | 1A | - | 1000 V | - | - | 25 A | - | 5 µs | 2 µs | 2.79(Max) |