- ECCN Code
- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- HTS Code
- Memory IC Type
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
Attribute column
Manufacturer
Silicon Storage Tech Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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 IS64LV6416L-12BA2 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 48 | 12 ns | - | - | INTEGRATED SILICON SOLUTION INC | 3 | 65536 words | 64000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.B | TIN LEAD | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | compliant | - | 48 | R-PBGA-B48 | Not Qualified | 3.63 V | INDUSTRIAL | 2.97 V | - | ASYNCHRONOUS | 0.105 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 1048576 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | 8 mm | 6 mm | ||
 IS41C44052C-50CTGI Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 24 | 50 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE | Obsolete | TSSOP2 | Yes | 5 V | - | - | EAR99 | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | NOT SPECIFIED | 24 | R-PDSO-G24 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 1 | SYNCHRONOUS | - | 4MX4 | - | 1.2 mm | 4 | - | 16777216 bit | - | - | - | FAST PAGE DRAM | - | - | - | - | - | FAST PAGE | - | 17.14 mm | 7.62 mm | ||
 IC41C16256-60T Integrated Silicon Solution Inc | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
IS61QDB451236A-250B4I Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 165 | 0.45 ns | 250 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | No | 1.8 V | - | - | 3A991.B.2.A | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 1.89 V | INDUSTRIAL | 1.71 V | - | SYNCHRONOUS | 0.7 mA | 512KX36 | 3-STATE | 1.4 mm | 36 | 0.27 A | 18874368 bit | - | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | - | - | - | - | - | - | 15 mm | 13 mm | ||
IS46LR32800H-5BLA2 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 90 | 5 ns | - | 2017-09-14 | INTEGRATED SILICON SOLUTION INC | 3 | 8388608 words | 8000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 1.8 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 10 | - | R-PBGA-B90 | - | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 8MX32 | - | 1.2 mm | 32 | - | 268435456 bit | - | - | - | DDR1 DRAM | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
IS45S83200J-7CTLA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 54 | 5.4 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | Yes | 3.3 V | - | - | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | - | R-PDSO-G54 | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 32MX8 | - | 1.2 mm | 8 | - | 268435456 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
 IS45VM32400E-75BLA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 90 | 5.4 ns | 133 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 90 | R-PBGA-B90 | Not Qualified | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.000015 A | 134217728 bit | AEC-Q100 | - | COMMON | SYNCHRONOUS DRAM | - | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
 IS42VS16100F-10BLI Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 60 | 7 ns | 100 MHz | - | INTEGRATED SILICON SOLUTION INC | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,7X15,25 | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.65 mm | compliant | - | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.05 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.0003 A | 16777216 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | 2048 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | 10.1 mm | 6.4 mm | ||
IS46R83200F-6BLA2 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 60 | 0.7 ns | 166 MHz | 2016-10-26 | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | - | - | 2.5 V | - | - | EAR99 | - | - | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | - | - | R-PBGA-B60 | - | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.19 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.03 A | 268435456 bit | - | - | COMMON | DDR1 DRAM | - | - | - | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
IS61QDP2B21M36A-250B4I Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 165 | 0.45 ns | 250 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | No | 1.8 V | - | - | 3A991.B.2.A | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 1.89 V | INDUSTRIAL | 1.71 V | - | SYNCHRONOUS | 1 mA | 1MX36 | 3-STATE | 1.4 mm | 36 | 0.27 A | 37748736 bit | - | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | - | - | - | - | - | - | 15 mm | 13 mm | ||
 IS45S81600F-6TLA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 54 | 5.4 ns | 166 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | End Of Life | TSOP2 | Yes | 3.3 V | e3 | - | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.12 mA | 16MX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
IS43QR8K02S2A-083TBL Integrated Silicon Solution Inc | In Stock | - | Datasheet | 16 Weeks | YES | 78 | - | 1200 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 2147483648 words | 2000000000 | 95 °C | - | PLASTIC/EPOXY | LFBGA | FBGA-78 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | - | Yes | 1.2 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | R-PBGA-B78 | - | 1.26 V | - | 1.14 V | 1 | SYNCHRONOUS | 0.511 mA | 2GX8 | 3-STATE | 1.4 mm | 8 | 0.044 A | 17179869184 bit | - | - | COMMON | DDR4 DRAM | - | - | - | 8 | 8 | DUAL BANK PAGE BURST | YES | 14 mm | 10 mm | ||
 IS64VF12836EC-6.5B2LA3 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 119 | 6.5 ns | 133 MHz | - | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | Yes | 2.5 V | e1 | - | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 10 | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | - | SYNCHRONOUS | 0.2 mA | 128KX36 | 3-STATE | 3.5 mm | 36 | 0.1 A | 4718592 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 2.38 V | - | - | - | - | - | - | 22 mm | 14 mm | ||
 IS61QDP2B22M36A-333B4LI Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 165 | 0.45 ns | 333 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Yes | 1.8 V | - | - | 3A991.B.2.A | - | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 1.89 V | INDUSTRIAL | 1.71 V | - | SYNCHRONOUS | 1.2 mA | 2MX36 | 3-STATE | 1.4 mm | 36 | 0.29 A | 75497472 bit | - | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | - | - | - | - | - | - | 15 mm | 13 mm | ||
 IS61LV25616-10KI Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 44 | 10 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, SOJ-44 | SOJ44,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | TTL COMPATIBLE INTERFACE LEVELS | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | compliant | - | 44 | R-PDSO-J44 | Not Qualified | 3.63 V | INDUSTRIAL | 3.135 V | - | ASYNCHRONOUS | 0.3 mA | 256KX16 | 3-STATE | 3.76 mm | 16 | 0.015 A | 4194304 bit | - | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | - | - | - | - | - | - | 28.58 mm | 10.16 mm | ||
IS45S83200G-7CTLA2 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 54 | 5.4 ns | 143 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | End Of Life | - | Yes | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | - | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.004 A | 268435456 bit | AEC-Q100 | - | COMMON | SYNCHRONOUS DRAM | - | - | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
IS61NVVF409618B-7.5M3LI Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 165 | 7.5 ns | 117 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Yes | 1.8 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 1.89 V | INDUSTRIAL | 1.71 V | - | SYNCHRONOUS | 0.25 mA | 4MX18 | 3-STATE | 1.4 mm | 18 | 0.12 A | 75497472 bit | - | PARALLEL | COMMON | ZBT SRAM | 1.71 V | - | - | - | - | - | - | 17 mm | 15 mm | ||
 IS62LV1024L-70TI Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 32 | 70 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 0.5 mm | compliant | - | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | 1 | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3-STATE | 1.2 mm | 8 | 0.00005 A | 1048576 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | - | - | - | - | - | 18.4 mm | 8 mm | ||
IS64LV6416L-10BA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 48 | 10 ns | - | - | INTEGRATED SILICON SOLUTION INC | 3 | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.B | TIN LEAD | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | compliant | - | 48 | R-PBGA-B48 | Not Qualified | 3.63 V | INDUSTRIAL | 2.97 V | - | ASYNCHRONOUS | 0.095 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 1048576 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | 8 mm | 6 mm | ||
IS61NVF409618B-7.5M3LI Integrated Silicon Solution Inc | In Stock | - | Datasheet | - | YES | 165 | 7.5 ns | 117 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Yes | 2.5 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | - | SYNCHRONOUS | 0.25 mA | 4MX18 | 3-STATE | 1.4 mm | 18 | 0.12 A | 75497472 bit | - | PARALLEL | COMMON | ZBT SRAM | 2.38 V | - | - | - | - | - | - | 17 mm | 15 mm |