- ECCN Code
- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- HTS Code
- Memory IC Type
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
Attribute column
Manufacturer
Silicon Storage Tech Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Output Enable | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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 IS45R16160D-75CTNA2 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 54 | 5.4 ns | 133 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 2.5 V | e4 | Yes | EAR99 | NICKEL PALLADIUM GOLD | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.13 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 268435456 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | 8192 | - | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
 IS65C256AL-25TA3 Integrated Silicon Solution Inc | In Stock | - | - | YES | 28 | 25 ns | - | - | INTEGRATED SILICON SOLUTION INC | 3 | 32768 words | 32000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | PLASTIC, TSOP1-28 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 0.55 mm | compliant | - | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | AUTOMOTIVE | 4.5 V | - | ASYNCHRONOUS | 0.035 mA | 32KX8 | 3-STATE | 1.2 mm | 8 | 0.00005 A | 262144 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | 11.8 mm | 8 mm | ||
IS61SF12832-12TQ Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 100 | 12 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | INTERNAL SELF TIMED WRITE CYCLE; INDIVIDUAL BYTE WRITE CONTROL | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.65 mm | compliant | - | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | - | SYNCHRONOUS | 0.17 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.02 A | 4194304 bit | - | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | - | 20 mm | 14 mm | ||
 IS46DR16320-37CBLA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 84 | - | - | - | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 1.8 V | e1 | Yes | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | - | DDR2 DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 13 mm | 10.5 mm | ||
IS46LR16400C-6BLA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 60 | 5.5 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B60 | - | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 4MX16 | - | 1.1 mm | 16 | - | 67108864 bit | - | - | - | DDR1 DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 10 mm | 8 mm | ||
 IS61NLP25636A-250TQ Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 100 | 2.6 ns | 250 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.65 mm | compliant | - | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | SYNCHRONOUS | 0.28 mA | 256KX36 | 3-STATE | 1.6 mm | 36 | 0.045 A | 9437184 bit | - | PARALLEL | COMMON | ZBT SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | - | 20 mm | 14 mm | ||
 IS61VPD51218A-200B2I Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 119 | 3.1 ns | 200 MHz | - | INTEGRATED SILICON SOLUTION INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | No | 2.5 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1.27 mm | compliant | - | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | - | SYNCHRONOUS | 0.275 mA | 512KX18 | 3-STATE | 2.41 mm | 18 | 0.06 A | 9437184 bit | - | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 2.38 V | - | - | - | - | - | - | - | 22 mm | 14 mm | ||
IS61SF6436-10TQ Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 100 | 10 ns | 66 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 65536 words | 64000 | 70 °C | - | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | - | 3A991.B.2.A | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.65 mm | unknown | - | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | 1 | SYNCHRONOUS | 0.2 mA | 64KX36 | 3-STATE | 1.6 mm | 36 | 0.01 A | 2359296 bit | - | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 3.14 V | YES | - | - | - | - | - | - | 20 mm | 14 mm | ||
IS61LSCS25672-250B Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 209 | 2.1 ns | - | - | INTEGRATED SILICON SOLUTION INC | 3 | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | BGA | 14 X 22 MM, 1 MM PITCH, BGA-209 | - | RECTANGULAR | GRID ARRAY | Obsolete | BGA | No | 1.8 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 209 | R-PBGA-B209 | Not Qualified | 1.9 V | COMMERCIAL | 1.7 V | - | SYNCHRONOUS | - | 256KX72 | - | 2.2 mm | 72 | - | 18874368 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | 22 mm | 14 mm | ||
IS24C08-3P Integrated Silicon Solution Inc | In Stock | - | Datasheet | NO | 8 | - | 0.4 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 1024 words | 1000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-8 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | EAR99 | TIN LEAD | ENDURANCE: 1,000,000 CYCLES, DATA RETENTION: 100 YEARS | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 5.5 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 1KX8 | - | 4.572 mm | 8 | 0.000004 A | 8192 bit | - | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | 1010DMMR | - | - | - | - | 9.3218 mm | 7.62 mm | ||
IC61LV5128-8K Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 36 | 8 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 524288 words | 512000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.400 INCH, SOJ-36 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | 3.3 V | e0 | - | 3A991.B.2.A | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | compliant | - | - | R-PDSO-J36 | Not Qualified | 3.63 V | COMMERCIAL | 2.97 V | - | ASYNCHRONOUS | 0.3 mA | 512KX8 | 3-STATE | - | 8 | 0.01 A | 4194304 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 3 V | - | - | - | - | - | - | - | - | - | ||
 IS64NLP12836EC-250B3LA3 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 165 | 2.6 ns | 250 MHz | - | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 3.3 V | e1 | - | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | AUTOMOTIVE | 3.135 V | - | SYNCHRONOUS | 0.285 mA | 128KX36 | 3-STATE | 1.2 mm | 36 | 0.1 A | 4718592 bit | AEC-Q100 | PARALLEL | COMMON | ZBT SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | - | 15 mm | 13 mm | ||
IS46LR32400G-6BLA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 90 | 5.5 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B90 | - | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 4MX32 | - | 1.2 mm | 32 | - | 134217728 bit | - | - | - | DDR1 DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
IS67WVE2M16TALL-70BA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 6 X 8 MM, MO-207, TFBGA-48 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | - | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | unknown | - | - | R-PBGA-B48 | - | 1.95 V | INDUSTRIAL | 1.7 V | - | ASYNCHRONOUS | - | 2MX16 | - | 1.2 mm | 16 | - | 33554432 bit | - | PARALLEL | - | PSEUDO STATIC RAM | - | - | - | - | - | - | - | - | - | - | - | - | - | 8 mm | 6 mm | ||
IS46TR16K01S2AL-15HBLA1 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 96 | - | - | 2018-07-17 | INTEGRATED SILICON SOLUTION INC | - | 1073741824 words | 1000000000 | 95 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | - | - | 1.35 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | R-PBGA-B96 | - | 1.45 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | - | 1GX16 | - | 1.4 mm | 16 | - | 17179869184 bit | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | DUAL BANK PAGE BURST | YES | 14 mm | 10 mm | ||
IS46LD16160A-25BLA2 Integrated Silicon Solution Inc | In Stock | - | - | YES | 134 | - | - | - | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Not Recommended | - | Yes | 1.2 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.65 mm | compliant | 10 | - | R-PBGA-B134 | - | 1.3 V | - | 1.14 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.1 mm | 16 | - | 268435456 bit | - | - | - | DDR2 DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 11.5 mm | 10 mm | ||
IS61VF204836B-7.5M3LI Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 165 | 7.5 ns | 117 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Yes | 2.5 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | - | SYNCHRONOUS | - | 2MX36 | 3-STATE | 1.4 mm | 36 | - | 75497472 bit | - | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 2.38 V | - | - | - | - | - | - | - | 17 mm | 15 mm | ||
IS61DDP2B22M18A-550B4L Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 165 | 0.45 ns | - | - | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 70 °C | - | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | - | 1.8 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | - | 1.89 V | COMMERCIAL | 1.71 V | - | SYNCHRONOUS | - | 2MX18 | - | 1.4 mm | 18 | - | 37748736 bit | - | PARALLEL | - | DDR SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | 15 mm | 13 mm | ||
IS61NLP25618A-250TQ Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 100 | 2.6 ns | 250 MHz | - | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.65 mm | compliant | - | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | SYNCHRONOUS | 0.225 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.03 A | 4718592 bit | - | PARALLEL | COMMON | ZBT SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | - | 20 mm | 14 mm | ||
 IS64WV5128BLL-10BA3 Integrated Silicon Solution Inc | In Stock | - | Datasheet | YES | 36 | 10 ns | - | - | INTEGRATED SILICON SOLUTION INC | 3 | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA36,6X8,30 | BGA36,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | No | 3 V | e0 | No | 3A991.B.2.A | TIN LEAD | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | compliant | - | 36 | R-PBGA-B36 | Not Qualified | 3.6 V | AUTOMOTIVE | 2.4 V | - | ASYNCHRONOUS | 0.065 mA | 512KX8 | 3-STATE | 1.2 mm | 8 | 0.015 A | 4194304 bit | AEC-Q100 | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | 8 mm | 6 mm |