-

YES

8

-

5 MHz

CATALYST SEMICONDUCTOR INC

2048 words

2000

125 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

Yes

5 V

e3

Yes

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

6 V

AUTOMOTIVE

2.5 V

-

SYNCHRONOUS

0.005 mA

2KX8

-

1.75 mm

8

0.00001 A

16384 bit

AEC-Q100

SERIAL

-

EEPROM

SPI

1000000 Write/Erase Cycles

5 ms

100

HARDWARE/SOFTWARE

-

-

-

-

-

-

4.9 mm

3.9 mm

-

YES

8

-

0.1 MHz

CATALYST SEMICONDUCTOR INC

128 words

128

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

Yes

3 V

e3

Yes

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

5.5 V

INDUSTRIAL

1.8 V

-

SYNCHRONOUS

0.003 mA

128X8

-

1.75 mm

8

0.000001 A

1024 bit

-

SERIAL

-

EEPROM

I2C

1000000 Write/Erase Cycles

5 ms

100

HARDWARE

-

-

-

1010DDDR

-

-

4.9 mm

3.9 mm

-

YES

32

100 ns

-

SONY CORP

131072 words

128000

70 °C

-

PLASTIC/EPOXY

TSOP1

TSOP1, TSSOP32,.8,20

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP

No

5 V

e0

No

EAR99

TIN LEAD

-

8542.32.00.41

DUAL

GULL WING

-

1

0.5 mm

unknown

-

32

R-PDSO-G32

Not Qualified

5.5 V

COMMERCIAL

4.5 V

1

ASYNCHRONOUS

0.06 mA

128KX8

3-STATE

1.2 mm

8

-

1048576 bit

-

PARALLEL

COMMON

STANDARD SRAM

-

-

-

-

-

2 V

YES

-

-

-

-

18.4 mm

8 mm

-

YES

96

-

-

XIAN UNILC SEMICONDUCTORS CO LTD

134217728 words

128000000

95 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Contact Manufacturer

-

-

1.5 V

-

-

EAR99

-

AUTO/SELF REFRESH

8542.32.00.36

BOTTOM

BALL

-

1

0.8 mm

unknown

-

-

R-PBGA-B96

-

1.575 V

INDUSTRIAL

1.425 V

1

SYNCHRONOUS

-

128MX16

-

1.2 mm

16

-

2147483648 bit

-

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

MULTI BANK PAGE BURST

YES

13 mm

9 mm

-

YES

5

-

0.1 MHz

CATALYST SEMICONDUCTOR INC

16 words

16

125 °C

-40 °C

PLASTIC/EPOXY

LSSOP

LSSOP, TSOP5/6,.11,37

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Obsolete

SOT-23

No

3 V

e0

-

EAR99

TIN LEAD

-

8542.32.00.51

DUAL

GULL WING

-

1

0.95 mm

unknown

-

5

R-PDSO-G5

Not Qualified

5.5 V

AUTOMOTIVE

1.8 V

-

SYNCHRONOUS

0.002 mA

16X8

-

1.45 mm

8

0.00001 A

128 bit

-

SERIAL

-

EEPROM

I2C

10000000 Write/Erase Cycles

5 ms

100

-

-

-

-

1010XXXR

-

-

2.92 mm

1.625 mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

YES

8

-

0.4 MHz

CATALYST SEMICONDUCTOR INC

1024 words

1000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP,

-

RECTANGULAR

SMALL OUTLINE

Transferred

SOIC

Yes

5 V

e3

Yes

EAR99

Matte Tin (Sn)

-

8542.32.00.51

DUAL

GULL WING

260

1

1.27 mm

unknown

40

8

R-PDSO-G8

Not Qualified

5.5 V

INDUSTRIAL

3 V

-

SYNCHRONOUS

-

1KX8

-

1.75 mm

8

-

8192 bit

-

SERIAL

-

EEPROM

I2C

-

5 ms

-

-

-

-

-

-

-

-

4.9 mm

3.9 mm

-

NO

18

12 ns

-

PYRAMID SEMICONDUCTOR CORP

1024 words

1000

70 °C

-

CERAMIC, GLASS-SEALED

DIP

0.300 INCH, HERMETIC SEALED, CERDIP-18

-

RECTANGULAR

IN-LINE

Active

DIP

No

5 V

e0

No

EAR99

TIN LEAD

LOW POWER STANDBY MODE

8542.32.00.41

DUAL

THROUGH-HOLE

-

1

2.54 mm

compliant

-

18

R-GDIP-T18

Not Qualified

5.5 V

COMMERCIAL

4.5 V

-

ASYNCHRONOUS

-

1KX4

-

5.08 mm

4

-

4096 bit

-

PARALLEL

-

STANDARD SRAM

-

-

-

-

-

-

-

-

-

-

-

23.114 mm

7.62 mm

-

YES

8

-

0.1 MHz

CATALYST SEMICONDUCTOR INC

4096 words

4000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

Yes

3 V

e3

-

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

5.5 V

INDUSTRIAL

1.8 V

-

SYNCHRONOUS

0.003 mA

4KX8

-

1.75 mm

8

0.000001 A

32768 bit

AEC-Q100

SERIAL

-

EEPROM

I2C

1000000 Write/Erase Cycles

10 ms

100

HARDWARE

-

-

-

1010DDDR

-

-

4.9 mm

3.9 mm

-

YES

8

-

1 MHz

CATALYST SEMICONDUCTOR INC

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

Yes

3 V

e3

Yes

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

5.5 V

INDUSTRIAL

2.5 V

-

SYNCHRONOUS

0.003 mA

8KX8

-

1.75 mm

8

0.000001 A

65536 bit

-

SERIAL

-

EEPROM

I2C

1000000 Write/Erase Cycles

5 ms

100

HARDWARE

-

-

-

1010DDDR

-

-

4.9 mm

3.9 mm

-

YES

84

0.35 ns

-

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC

33554432 words

32000000

95 °C

-

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Contact Manufacturer

-

Yes

1.8 V

-

-

EAR99

-

AUTO/SELF REFRESH

8542.32.00.28

BOTTOM

BALL

NOT SPECIFIED

1

0.8 mm

unknown

NOT SPECIFIED

-

R-PBGA-B84

-

1.9 V

OTHER

1.7 V

1

SYNCHRONOUS

-

32MX16

-

1.2 mm

16

-

536870912 bit

-

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

FOUR BANK PAGE BURST

YES

12.5 mm

8 mm

-

YES

40

12 ns

-

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC

262144 words

256000

70 °C

-

PLASTIC/EPOXY

SOP

SOP, SOJ40,.44

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

Contact Manufacturer

SOJ

Yes

5 V

-

-

EAR99

-

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

8542.32.00.02

DUAL

GULL WING

-

1

1.27 mm

unknown

-

40

R-PDSO-G40

Not Qualified

5.5 V

COMMERCIAL

4.5 V

1

ASYNCHRONOUS

0.21 mA

256KX16

3-STATE

3.76 mm

16

0.002 A

4194304 bit

-

-

COMMON

EDO DRAM

-

-

-

-

-

-

-

512

-

FAST PAGE WITH EDO

NO

26.04 mm

10.16 mm

-

YES

8

-

0.1 MHz

CATALYST SEMICONDUCTOR INC

4096 words

4000

70 °C

-

PLASTIC/EPOXY

SOP

SOP, SOP8,.3

SOP8,.3

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

Yes

3 V

e3

-

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

5.5 V

COMMERCIAL

2.5 V

-

SYNCHRONOUS

0.003 mA

4KX8

-

2.03 mm

8

0.000001 A

32768 bit

AEC-Q100

SERIAL

-

EEPROM

I2C

1000000 Write/Erase Cycles

10 ms

100

HARDWARE

-

-

-

1010DDDR

-

-

5.3 mm

5.25 mm

-

YES

8

-

5 MHz

CATALYST SEMICONDUCTOR INC

128 words

128

70 °C

-

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Transferred

SOIC

Yes

5 V

e3

Yes

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

6 V

COMMERCIAL

2.5 V

-

SYNCHRONOUS

0.005 mA

128X8

-

1.75 mm

8

0.000001 A

1024 bit

-

SERIAL

-

EEPROM

SPI

1000000 Write/Erase Cycles

5 ms

100

HARDWARE/SOFTWARE

-

-

-

-

-

-

4.9 mm

3.9 mm

-

NO

24

30 ns

-

PERFORMANCE SEMICONDUCTOR CORP

16384 words

16000

125 °C

-55 °C

CERAMIC

DIP

DIP, DIP24,.3

DIP24,.3

RECTANGULAR

IN-LINE

Obsolete

-

No

5 V

e0

-

3A001.A.2.C

Tin/Lead (Sn/Pb)

-

8542.32.00.41

DUAL

THROUGH-HOLE

-

-

2.54 mm

unknown

-

-

R-XDIP-T24

Not Qualified

-

MILITARY

-

-

ASYNCHRONOUS

0.12 mA

16KX4

3-STATE

-

4

0.02 A

65536 bit

38535Q/M;38534H;883B

PARALLEL

COMMON

STANDARD SRAM

-

-

-

-

-

4.5 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

YES

54

5 ns

-

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC

8388608 words

8000000

70 °C

-

PLASTIC/EPOXY

TSOP2

TSOP2,

-

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Active

-

-

3.3 V

-

-

EAR99

-

AUTO/SELF REFRESH

8542.32.00.02

DUAL

GULL WING

-

1

0.8 mm

unknown

-

-

R-PDSO-G54

-

3.6 V

COMMERCIAL

3 V

1

SYNCHRONOUS

-

8MX16

-

1.2 mm

16

-

134217728 bit

-

-

-

SYNCHRONOUS DRAM

-

-

-

-

-

-

-

-

-

FOUR BANK PAGE BURST

YES

22.22 mm

10.16 mm

-

YES

84

0.4 ns

-

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC

33554432 words

32000000

95 °C

-

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Contact Manufacturer

-

Yes

1.8 V

-

-

EAR99

-

AUTO/SELF REFRESH

8542.32.00.28

BOTTOM

BALL

NOT SPECIFIED

1

0.8 mm

unknown

NOT SPECIFIED

-

R-PBGA-B84

-

1.9 V

OTHER

1.7 V

1

SYNCHRONOUS

-

32MX16

-

1.2 mm

16

-

536870912 bit

-

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

FOUR BANK PAGE BURST

YES

12.5 mm

8 mm

-

YES

8

-

5 MHz

CATALYST SEMICONDUCTOR INC

512 words

512

70 °C

-

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

No

5 V

e0

-

EAR99

TIN LEAD

1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

6 V

COMMERCIAL

2.5 V

-

SYNCHRONOUS

0.005 mA

512X8

-

1.75 mm

8

0.000001 A

4096 bit

-

SERIAL

-

EEPROM

SPI

1000000 Write/Erase Cycles

5 ms

100

HARDWARE/SOFTWARE

-

-

-

-

-

-

4.9 mm

3.9 mm

-

YES

8

-

0.1 MHz

CATALYST SEMICONDUCTOR INC

128 words

128

70 °C

-

PLASTIC/EPOXY

TSSOP

TSSOP, TSSOP8,.25

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Obsolete

SOIC

No

3 V

e0

No

EAR99

TIN LEAD

-

8542.32.00.51

DUAL

GULL WING

-

1

0.65 mm

unknown

-

8

R-PDSO-G8

Not Qualified

6 V

COMMERCIAL

2.5 V

-

SYNCHRONOUS

0.003 mA

128X8

-

1.2 mm

8

0.000001 A

1024 bit

-

SERIAL

-

EEPROM

I2C

1000000 Write/Erase Cycles

10 ms

100

-

-

-

-

-

-

-

4.4 mm

3 mm