- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- ECCN Code
- HTS Code
- Memory IC Type
- Package Description
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
Attribute column
Manufacturer
Taiwan Semiconductor Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Base Product Number | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Mfr | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Programmable | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | I2C Control Byte | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 SC22101CN Sierra Semiconductor | In Stock | - | Datasheet | NO | 18 | 300 ns | - | - | SIERRA SEMICONDUCTOR | - | - | 128 words | 128 | 70 °C | - | PLASTIC/EPOXY | DIP | - | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | - | - | No | 5 V | - | - | e0 | - | - | - | Tin/Lead (Sn/Pb) | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | - | R-PDIP-T18 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.015 mA | 128X8 | 3-STATE | - | 8 | 0.0001 A | 1024 bit | - | PARALLEL | - | EEPROM | 5 V | - | - | 20 ms | - | - | - | YES | NO | NO | - | - | - | - | - | ||
P4C188-15JC Pyramid Semiconductor Corporation | In Stock | - | Datasheet | YES | 24 | 15 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | - | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.300 INCH, PLASTIC, SOJ-24 | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | Active | SOJ | - | No | 5 V | - | - | e0 | No | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | compliant | - | 24 | R-PDSO-J24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.16 mA | 16KX4 | 3-STATE | 3.7592 mm | 4 | 0.015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | 15.875 mm | 7.5184 mm | ||
 CAT24WC32X Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | 0.1 MHz | CATALYST SEMICONDUCTOR INC | - | - | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | Yes | 3 V | - | - | e3 | - | - | EAR99 | MATTE TIN | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 4KX8 | - | 2.03 mm | 8 | 0.000001 A | 32768 bit | AEC-Q100 | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE | - | - | - | - | 1010DDDR | - | - | 5.3 mm | 5.25 mm | ||
QS7025A-20TF-02 Quality Semiconductor | In Stock | - | - | - | - | - | QS7025A | - | - | Quality Semiconductor | - | - | - | - | - | - | - | - | - | - | - | - | - | Not Verified | - | - | Bulk | * | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
CAT24FC01WI Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | 0.1 MHz | CATALYST SEMICONDUCTOR INC | - | - | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | Yes | 3 V | - | - | e3 | Yes | - | EAR99 | MATTE TIN | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 128X8 | - | 1.75 mm | 8 | 0.000001 A | 1024 bit | - | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | - | 1010DDDR | - | - | 4.9 mm | 3.9 mm | ||
P4C188-20PC Pyramid Semiconductor Corporation | In Stock | - | Datasheet | NO | 22 | 20 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | - | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Active | DIP | - | No | 5 V | - | - | e0 | No | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | 22 | R-PDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.155 mA | 16KX4 | 3-STATE | 5.334 mm | 4 | 0.015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | 29.337 mm | 7.62 mm | ||
CAT24FC32AU Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | - | No | - | - | - | e0 | - | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | DUAL | GULL WING | - | - | 0.635 mm | unknown | - | - | R-PDSO-G8 | Not Qualified | - | COMMERCIAL | - | - | - | 0.003 mA | 4KX8 | - | - | 8 | 9e-7 A | 32768 bit | - | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | - | 100 | HARDWARE | - | - | - | - | 1010DDDR | - | - | - | - | ||
UT89X Uni-Tran Semiconductor Corp | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
M12L128168A-5TG2N Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 54 | 5 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | - | - | 3.3 V | - | - | - | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | - | R-PDSO-G54 | - | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | - | 8MX16 | - | 1.2 mm | 16 | - | 134217728 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
M14D5121632A-2.5BG2M Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 84 | 0.4 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | 33554432 words | 32000000 | 95 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | Yes | 1.8 V | - | - | - | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B84 | - | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||
CAT24C01BU-TE13 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | 0.1 MHz | CATALYST SEMICONDUCTOR INC | - | - | 128 words | 128 | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | SOIC | - | No | 3 V | - | - | e0 | No | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 128X8 | - | 1.2 mm | 8 | 0.000001 A | 1024 bit | - | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | - | - | - | - | - | - | - | - | 4.4 mm | 3 mm | ||
P4C1256-70L28M Pyramid Semiconductor Corporation | In Stock | - | Datasheet | YES | 28 | 70 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | - | 32768 words | 32000 | 125 °C | -55 °C | UNSPECIFIED | QCCN | 0.350 X 0.550 INCH, LCC-28 | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | Active | QLCC | - | No | 5 V | - | - | e0 | No | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | QUAD | NO LEAD | - | 1 | 1.27 mm | compliant | - | 28 | R-XQCC-N28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 1.905 mm | 8 | 0.02 A | 262144 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | 13.97 mm | 8.89 mm | ||
CAT24C02AJ-TE7 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | 256 words | 256 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | No | 5 V | - | - | e0 | - | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | DUAL | GULL WING | - | - | 1.27 mm | unknown | - | - | R-PDSO-G8 | Not Qualified | - | COMMERCIAL | - | - | - | 0.003 mA | 256X8 | - | - | 8 | 0.000004 A | 2048 bit | - | SERIAL | - | EEPROM | - | I2C | 100000 Write/Erase Cycles | - | 100 | - | - | - | - | - | 1010DDDR | - | - | - | - | ||
CAT25C04S Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | 5 MHz | CATALYST SEMICONDUCTOR INC | - | - | 512 words | 512 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | No | 5 V | - | - | e0 | - | - | EAR99 | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.005 mA | 512X8 | - | 1.75 mm | 8 | 0.000001 A | 4096 bit | - | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
JS27HU2G08SDDA-25-SU Jeju Semiconductor Corp | In Stock | - | - | - | - | - | - | - | - | Jeju Semiconductor Corp | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
CAT64LC10SI-TE13 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | 1 MHz | CATALYST SEMICONDUCTOR INC | - | - | 64 words | 64 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | No | 3.3 V | - | - | e0 | - | - | EAR99 | TIN LEAD | SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 64X16 | 3-STATE | 1.75 mm | 16 | 0.000003 A | 1024 bit | - | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
M53D256328A-5BG2F Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 144 | 5 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, | - | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | - | - | - | 1.8 V | - | - | - | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | S-PBGA-B144 | - | 1.95 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | - | 8MX32 | - | 1.4 mm | 32 | - | 268435456 bit | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 12 mm | 12 mm | ||
MU9C2480L-90DC Music Semiconductors Inc | In Stock | - | Datasheet | YES | 44 | 75 ns | - | - | MUSIC SEMICONDUCTORS INC | - | 3 | 2048 words | 2000 | 70 °C | - | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC44,.7SQ | LDCC44,.7SQ | SQUARE | CHIP CARRIER | Contact Manufacturer | - | - | No | 3.3 V | - | - | e0 | No | - | EAR99 | TIN LEAD | BIT MASKING; LANCAM | 8542.32.00.41 | QUAD | J BEND | - | 1 | 1.27 mm | unknown | - | - | S-PQCC-J44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | 0.11 mA | 2KX64 | - | - | 64 | 0.002 A | 131072 bit | - | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
CAT34WC02UI Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | - | 0.1 MHz | CATALYST SEMICONDUCTOR INC | - | - | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | SOIC | - | No | 5 V | - | - | e0 | No | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 256X8 | - | 1.2 mm | 8 | 0.000001 A | 2048 bit | - | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | 1010DDDR | - | - | 4.4 mm | 3 mm | ||
CAT25C02LI Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | - | 5 MHz | CATALYST SEMICONDUCTOR INC | - | - | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | - | Yes | 5 V | - | - | e3 | - | - | EAR99 | MATTE TIN | - | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 5.5 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.005 mA | 256X8 | - | 5.334 mm | 8 | 0.000001 A | 2048 bit | - | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | 9.271 mm | 7.62 mm |