-

YES

28

70 ns

-

PYRAMID SEMICONDUCTOR CORP

-

32768 words

32000

125 °C

-55 °C

UNSPECIFIED

QCCN

0.350 X 0.550 INCH, LCC-28

LCC28,.35X.55

RECTANGULAR

CHIP CARRIER

Active

QLCC

No

5 V

e0

No

3A001.A.2.C

TIN LEAD

-

8542.32.00.41

QUAD

NO LEAD

-

1

1.27 mm

compliant

-

28

R-XQCC-N28

Not Qualified

5.5 V

MILITARY

4.5 V

-

ASYNCHRONOUS

0.15 mA

32KX8

3-STATE

1.905 mm

8

0.02 A

262144 bit

-

PARALLEL

COMMON

STANDARD SRAM

-

-

-

-

-

-

4.5 V

-

-

-

-

-

-

-

-

-

-

13.97 mm

8.89 mm

-

YES

8

-

-

CATALYST SEMICONDUCTOR INC

-

256 words

256

70 °C

-

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

-

No

5 V

e0

-

EAR99

Tin/Lead (Sn/Pb)

-

8542.32.00.51

DUAL

GULL WING

-

-

1.27 mm

unknown

-

-

R-PDSO-G8

Not Qualified

-

COMMERCIAL

-

-

-

0.003 mA

256X8

-

-

8

0.000004 A

2048 bit

-

SERIAL

-

EEPROM

-

I2C

100000 Write/Erase Cycles

-

100

-

-

-

-

-

-

-

1010DDDR

-

-

-

-

-

-

-

YES

8

-

0.1 MHz

CATALYST SEMICONDUCTOR INC

-

2048 words

2000

85 °C

-40 °C

PLASTIC/EPOXY

TSSOP

TSSOP, TSSOP8,.19

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Obsolete

MSOP

No

3 V

e0

-

EAR99

TIN LEAD

-

8542.32.00.51

DUAL

GULL WING

-

1

0.65 mm

unknown

-

8

S-PDSO-G8

Not Qualified

5.5 V

INDUSTRIAL

1.8 V

-

SYNCHRONOUS

0.003 mA

2KX8

-

1.1 mm

8

0.000001 A

16384 bit

-

SERIAL

-

EEPROM

-

I2C

1000000 Write/Erase Cycles

5 ms

100

HARDWARE

-

-

-

-

-

-

1010DDDR

-

-

-

-

3 mm

3 mm

-

-

-

-

-

CATALYST SEMICONDUCTOR INC

-

-

-

-

-

-

-

,

-

-

-

Transferred

-

-

-

-

-

EAR99

-

-

8542.32.00.51

-

-

-

-

-

unknown

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

18

300 ns

-

SIERRA SEMICONDUCTOR

-

128 words

128

70 °C

-

PLASTIC/EPOXY

DIP

-

DIP18,.3

RECTANGULAR

IN-LINE

Obsolete

-

No

5 V

e0

-

-

Tin/Lead (Sn/Pb)

-

-

DUAL

THROUGH-HOLE

-

1

2.54 mm

unknown

-

-

R-PDIP-T18

Not Qualified

5.5 V

COMMERCIAL

4.5 V

-

ASYNCHRONOUS

0.015 mA

128X8

3-STATE

-

8

0.0001 A

1024 bit

-

PARALLEL

-

EEPROM

5 V

-

-

20 ms

-

-

-

YES

NO

NO

-

-

-

-

-

-

-

-

-

-

YES

28

150 ns

-

CATALYST SEMICONDUCTOR INC

1

8192 words

8000

70 °C

-

PLASTIC/EPOXY

SOP

LEAD FREE AND HALOGEN FREE, EIAJ, SOIC-28

SOP28,.45

RECTANGULAR

SMALL OUTLINE

Transferred

SOIC

Yes

5 V

e3

-

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

28

R-PDSO-G28

Not Qualified

5.5 V

COMMERCIAL

4.5 V

-

ASYNCHRONOUS

0.03 mA

8KX8

-

2.65 mm

8

0.0001 A

65536 bit

-

PARALLEL

-

EEPROM

5 V

-

1000000 Write/Erase Cycles

5 ms

-

-

-

YES

YES

NO

32 words

-

-

-

-

-

-

17.9 mm

7.5 mm

-

YES

8

-

1 MHz

CATALYST SEMICONDUCTOR INC

-

64 words

64

70 °C

-

PLASTIC/EPOXY

SOP

SOP, SOP8,.3

SOP8,.3

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

No

5 V

e0

No

EAR99

TIN LEAD

3 WIRE INTERFACE

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

5.5 V

COMMERCIAL

4.5 V

-

SYNCHRONOUS

0.003 mA

64X16

-

2.03 mm

16

0.00005 A

1024 bit

-

SERIAL

-

EEPROM

-

MICROWIRE

1000000 Write/Erase Cycles

10 ms

100

SOFTWARE

-

-

-

-

-

-

-

-

-

-

-

5.3 mm

5.25 mm

-

YES

44

120 ns

-

SONY CORP

-

65536 words

64000

85 °C

-25 °C

PLASTIC/EPOXY

TSOP2

TSOP2, TSOP44,.46,32

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP2

-

3.3 V

-

-

EAR99

-

-

8542.32.00.41

DUAL

GULL WING

-

1

0.8 mm

unknown

-

44

R-PDSO-G44

Not Qualified

3.6 V

OTHER

2.7 V

-

ASYNCHRONOUS

0.05 mA

64KX16

3-STATE

1.2 mm

16

0.000028 A

1048576 bit

-

PARALLEL

COMMON

STANDARD SRAM

-

-

-

-

-

-

2 V

-

-

-

-

-

-

-

-

-

-

18.41 mm

10.16 mm

-

YES

60

0.7 ns

200 MHz

XIAN UNILC SEMICONDUCTORS CO LTD

-

67108864 words

64000000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA60,9X12,40/32

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Contact Manufacturer

-

-

2.5 V

-

-

EAR99

-

-

8542.32.00.32

BOTTOM

BALL

-

1

1 mm

unknown

-

-

R-PBGA-B60

-

2.7 V

INDUSTRIAL

2.3 V

1

SYNCHRONOUS

0.26 mA

64MX16

3-STATE

1.2 mm

16

0.012 A

1073741824 bit

-

-

COMMON

DDR1 DRAM

-

-

-

-

-

-

2.3 V

-

-

-

-

8192

-

2,4,8

2,4,8

DUAL BANK PAGE BURST

YES

12 mm

10 mm

-

YES

144

5 ns

-

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC

-

8388608 words

8000000

70 °C

-

PLASTIC/EPOXY

LFBGA

LFBGA,

-

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

Active

-

-

1.8 V

-

-

EAR99

-

AUTO/SELF REFRESH

8542.32.00.24

BOTTOM

BALL

NOT SPECIFIED

1

0.8 mm

unknown

NOT SPECIFIED

-

S-PBGA-B144

-

1.95 V

COMMERCIAL

1.7 V

1

SYNCHRONOUS

-

8MX32

-

1.4 mm

32

-

268435456 bit

-

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FOUR BANK PAGE BURST

YES

12 mm

12 mm

-

NO

8

-

5 MHz

CATALYST SEMICONDUCTOR INC

-

256 words

256

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP, DIP8,.3

DIP8,.3

RECTANGULAR

IN-LINE

Obsolete

DIP

Yes

5 V

e3

-

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

THROUGH-HOLE

-

1

2.54 mm

unknown

-

8

R-PDIP-T8

Not Qualified

5.5 V

INDUSTRIAL

2.5 V

-

SYNCHRONOUS

0.005 mA

256X8

-

5.334 mm

8

0.000001 A

2048 bit

-

SERIAL

-

EEPROM

-

SPI

1000000 Write/Erase Cycles

5 ms

100

HARDWARE/SOFTWARE

-

-

-

-

-

-

-

-

-

-

-

9.271 mm

7.62 mm

-

NO

8

-

5 MHz

CATALYST SEMICONDUCTOR INC

-

512 words

512

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP, DIP8,.3

DIP8,.3

RECTANGULAR

IN-LINE

Obsolete

DIP

Yes

5 V

e3

Yes

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

THROUGH-HOLE

-

1

2.54 mm

unknown

-

8

R-PDIP-T8

Not Qualified

5.5 V

INDUSTRIAL

2.5 V

-

SYNCHRONOUS

0.005 mA

512X8

-

5.334 mm

8

0.000001 A

4096 bit

-

SERIAL

-

EEPROM

-

SPI

1000000 Write/Erase Cycles

5 ms

100

HARDWARE/SOFTWARE

-

-

-

-

-

-

-

-

-

-

-

9.271 mm

7.62 mm

-

YES

8

-

1 MHz

CATALYST SEMICONDUCTOR INC

-

64 words

64

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP8,.25

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

No

3.3 V

e0

-

EAR99

TIN LEAD

SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE

8542.32.00.51

DUAL

GULL WING

-

1

1.27 mm

unknown

-

8

R-PDSO-G8

Not Qualified

6 V

INDUSTRIAL

2.5 V

-

SYNCHRONOUS

0.003 mA

64X16

3-STATE

1.75 mm

16

0.000003 A

1024 bit

-

SERIAL

-

EEPROM

-

SPI

1000000 Write/Erase Cycles

10 ms

100

HARDWARE/SOFTWARE

-

-

-

-

-

-

-

-

-

-

-

4.9 mm

3.9 mm

-

YES

44

75 ns

-

MUSIC SEMICONDUCTORS INC

3

2048 words

2000

70 °C

-

PLASTIC/EPOXY

QCCJ

QCCJ, LDCC44,.7SQ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

Contact Manufacturer

-

No

3.3 V

e0

No

EAR99

TIN LEAD

BIT MASKING; LANCAM

8542.32.00.41

QUAD

J BEND

-

1

1.27 mm

unknown

-

-

S-PQCC-J44

Not Qualified

3.6 V

COMMERCIAL

3 V

-

ASYNCHRONOUS

0.11 mA

2KX64

-

-

64

0.002 A

131072 bit

-

PARALLEL

-

CONTENT ADDRESSABLE SRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

8

-

10 MHz

CATALYST SEMICONDUCTOR INC

-

16384 words

16000

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP,

-

RECTANGULAR

IN-LINE

Transferred

DIP

Yes

-

e3

Yes

EAR99

MATTE TIN

-

8542.32.00.51

DUAL

THROUGH-HOLE

-

1

2.54 mm

unknown

-

8

R-PDIP-T8

Not Qualified

5.5 V

INDUSTRIAL

1.8 V

-

SYNCHRONOUS

-

16KX8

-

5.33 mm

8

-

131072 bit

-

SERIAL

-

EEPROM

-

SPI

-

5 ms

-

-

-

-

-

-

-

-

-

-

-

-

-

9.27 mm

7.62 mm

-

YES

8

-

0.1 MHz

CATALYST SEMICONDUCTOR INC

-

256 words

256

85 °C

-40 °C

PLASTIC/EPOXY

TSSOP

TSSOP, TSSOP8,.25

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Obsolete

SOIC

No

5 V

e0

No

EAR99

TIN LEAD

-

8542.32.00.51

DUAL

GULL WING

-

1

0.65 mm

unknown

-

8

R-PDSO-G8

Not Qualified

6 V

INDUSTRIAL

2.5 V

-

SYNCHRONOUS

0.003 mA

256X8

-

1.2 mm

8

0.000001 A

2048 bit

-

SERIAL

-

EEPROM

-

I2C

1000000 Write/Erase Cycles

10 ms

100

HARDWARE/SOFTWARE

-

-

-

-

-

-

1010DDDR

-

-

-

-

4.4 mm

3 mm

-

YES

60

5 ns

-

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC

-

16777216 words

16000000

70 °C

-

PLASTIC/EPOXY

TFBGA

TFBGA,

-

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Contact Manufacturer

-

-

1.8 V

-

-

EAR99

-

AUTO/SELF REFRESH

8542.32.00.24

BOTTOM

BALL

-

1

0.8 mm

unknown

-

-

R-PBGA-B60

-

1.95 V

COMMERCIAL

1.7 V

1

SYNCHRONOUS

-

16MX16

-

1.2 mm

16

-

268435456 bit

-

-

-

DDR DRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FOUR BANK PAGE BURST

YES

13 mm

8 mm

-

YES

24

25 ns

-

PYRAMID SEMICONDUCTOR CORP

-

2048 words

2000

125 °C

-55 °C

UNSPECIFIED

QCCN

0.300 X 0.400 INCH, LCC-24

LCC24,.3X.4

RECTANGULAR

CHIP CARRIER

Active

LCC

No

5 V

-

No

3A001.A.2.C

-

-

8542.32.00.41

QUAD

NO LEAD

NOT SPECIFIED

1

1.27 mm

compliant

NOT SPECIFIED

24

R-XQCC-N24

Not Qualified

5.5 V

MILITARY

4.5 V

-

ASYNCHRONOUS

0.15 mA

2KX8

3-STATE

1.9304 mm

8

0.015 A

16384 bit

MIL-STD-883 Class B

PARALLEL

COMMON

STANDARD SRAM

-

-

-

-

-

-

4.5 V

-

-

-

-

-

-

-

-

-

-

10.16 mm

7.62 mm

-

-

-

-

-

CATALYST SEMICONDUCTOR INC

-

-

-

-

-

-

-

,

-

-

-

Transferred

-

-

-

-

-

EAR99

-

-

8542.32.00.51

-

-

-

-

-

unknown

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-