- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- ECCN Code
- HTS Code
- Memory IC Type
- Package Description
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
Attribute column
Manufacturer
Taiwan Semiconductor Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Page Size | Ready/Busy | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 CAT24FC32JI Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 1 MHz | CATALYST SEMICONDUCTOR INC | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 4KX8 | - | 1.75 mm | 8 | 0.000001 A | 32768 bit | - | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | - | - | - | - | 1010DDDR | - | - | - | - | 4.9 mm | 3.9 mm | ||
P4C188-15JC Pyramid Semiconductor Corporation | In Stock | - | Datasheet | YES | 24 | 15 ns | - | PYRAMID SEMICONDUCTOR CORP | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.300 INCH, PLASTIC, SOJ-24 | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | Active | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | compliant | - | 24 | R-PDSO-J24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.16 mA | 16KX4 | 3-STATE | 3.7592 mm | 4 | 0.015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | - | - | - | 15.875 mm | 7.5184 mm | ||
 CAT64LC20S Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 1 MHz | CATALYST SEMICONDUCTOR INC | 128 words | 128 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | - | EAR99 | TIN LEAD | SPI BUS INTERFACE | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 128X16 | - | 1.75 mm | 16 | 0.000003 A | 2048 bit | - | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
CAT24C00YE Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 0.1 MHz | CATALYST SEMICONDUCTOR INC | 16 words | 16 | 125 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | SOIC | Yes | 3 V | e3 | - | EAR99 | MATTE TIN | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | AUTOMOTIVE | 1.8 V | - | SYNCHRONOUS | 0.002 mA | 16X8 | - | 1.1 mm | 8 | 0.00001 A | 128 bit | - | SERIAL | - | EEPROM | - | I2C | 10000000 Write/Erase Cycles | 5 ms | 100 | - | - | - | - | - | - | - | - | 1010XXXR | - | - | - | - | 4.4 mm | 3 mm | ||
P4C188-20PC Pyramid Semiconductor Corporation | In Stock | - | Datasheet | NO | 22 | 20 ns | - | PYRAMID SEMICONDUCTOR CORP | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | 22 | R-PDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.155 mA | 16KX4 | 3-STATE | 5.334 mm | 4 | 0.015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | - | - | - | 29.337 mm | 7.62 mm | ||
M14D128168A-1.8BG2Y Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 84 | 0.35 ns | 533 MHz | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 8388608 words | 8000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B84 | - | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.22 mA | 8MX16 | - | 1.2 mm | 16 | 0.012 A | 134217728 bit | - | - | COMMON | DDR2 DRAM | - | - | - | - | - | - | - | - | - | - | - | - | 4096 | - | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||
 CAT25C64PA Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | 3 MHz | CATALYST SEMICONDUCTOR INC | 8192 words | 8000 | 105 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.01 mA | 8KX8 | - | 4.57 mm | 8 | 0.00001 A | 65536 bit | - | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | 9.59 mm | 7.62 mm | ||
CAT24WC32JI-1.8 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 0.1 MHz | CATALYST SEMICONDUCTOR INC | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 4KX8 | - | 1.75 mm | 8 | 0.000001 A | 32768 bit | AEC-Q100 | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE | - | - | - | - | - | - | - | 1010DDDR | - | - | - | - | 4.9 mm | 3.9 mm | ||
SRM2B256SLCX70 Alpha & Omega Semiconductor | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
 CXK77P18E160GB-44E Sony Semiconductor | In Stock | - | Datasheet | YES | 119 | 4.7 ns | 227 MHz | SONY CORP | 1048576 words | 1000000 | 85 °C | - | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1.27 mm | unknown | - | 119 | R-PBGA-B119 | Not Qualified | 3.47 V | OTHER | 3.13 V | - | SYNCHRONOUS | 0.75 mA | 1MX18 | 3-STATE | 2.5 mm | 18 | 0.25 A | 18874368 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | - | - | - | - | - | 22 mm | 14 mm | ||
SCB33S128160AE-6BI Xi'an UniIC Semiconductors Co Ltd | In Stock | - | Datasheet | YES | 54 | 5.4 ns | - | XIAN UNILC SEMICONDUCTORS CO LTD | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | - | Yes | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | - | R-PDSO-G54 | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 8MX16 | - | 1.2 mm | 16 | - | 134217728 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
M15F1G1664A-ADBG2R Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 96 | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 67108864 words | 64000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B96 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | - | 64MX16 | - | 1.2 mm | 16 | - | 1073741824 bit | - | - | - | DDR3 DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | ||
P4C188L-55CM Pyramid Semiconductor Corporation | In Stock | - | Datasheet | NO | 22 | 55 ns | - | PERFORMANCE SEMICONDUCTOR CORP | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP22,.3 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | 3A001.A.2.C | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-XDIP-T22 | Not Qualified | - | MILITARY | - | - | ASYNCHRONOUS | 0.12 mA | 16KX4 | 3-STATE | - | 4 | 0.0006 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
CAT24C02YI Catalyst Semiconductor | In Stock | - | Datasheet | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | - | - | , | - | - | - | Transferred | - | - | - | - | - | EAR99 | - | - | 8542.32.00.51 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
CAT25C16P Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | 5 MHz | CATALYST SEMICONDUCTOR INC | 2048 words | 2000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 6 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.005 mA | 2KX8 | - | 4.57 mm | 8 | 0.000001 A | 16384 bit | AEC-Q100 | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | 9.59 mm | 7.62 mm | ||
M12L2561616A-6BIG2S Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 54 | 5.4 ns | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | S-PBGA-B54 | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1 mm | 16 | - | 268435456 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | ||
CXK5V8257BM-70LL Sony Semiconductor | In Stock | - | Datasheet | YES | 28 | 70 ns | - | SONY CORP | 32768 words | 32000 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP28,.5 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | 3.3 V | - | - | EAR99 | - | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | 0.04 mA | 32KX8 | 3-STATE | 2.7 mm | 8 | 0.000003 A | 262144 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | - | - | - | - | 18 mm | 8.4 mm | ||
 CAT24C00TPI Catalyst Semiconductor | In Stock | - | Datasheet | YES | 5 | - | 0.1 MHz | CATALYST SEMICONDUCTOR INC | 16 words | 16 | 85 °C | -40 °C | PLASTIC/EPOXY | LSSOP | LSSOP, TSOP5/6,.11,37 | TSOP5/6,.11,37 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Obsolete | SOT-23 | No | 3 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.95 mm | unknown | - | 5 | R-PDSO-G5 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.002 mA | 16X8 | - | 1.45 mm | 8 | 0.000001 A | 128 bit | - | SERIAL | - | EEPROM | - | I2C | 10000000 Write/Erase Cycles | 5 ms | 100 | - | - | - | - | - | - | - | - | 1010XXXR | - | - | - | - | 2.92 mm | 1.625 mm | ||
CAT28LV65P-20 Catalyst Semiconductor | In Stock | - | Datasheet | NO | 28 | 200 ns | - | CATALYST SEMICONDUCTOR INC | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Transferred | DIP | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 28 | R-PDIP-T28 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | 0.008 mA | 8KX8 | - | 5.08 mm | 8 | 0.0001 A | 65536 bit | - | PARALLEL | - | EEPROM | 3 V | - | 100000 Write/Erase Cycles | 5 ms | - | - | - | YES | YES | NO | 32 words | YES | - | - | - | - | - | - | 36.695 mm | 15.24 mm | ||
M12L64322A-7TG Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 86 | 6 ns | 143 MHz | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 2097152 words | 2000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | TSOP2 | Yes | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.5 mm | unknown | - | 86 | R-PDSO-G86 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.285 mA | 2MX32 | 3-STATE | 1.2 mm | 32 | 0.002 A | 67108864 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | 2048 | - | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm |