- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- ECCN Code
- HTS Code
- Memory IC Type
- Package Description
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
Attribute column
Manufacturer
Taiwan Semiconductor Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Output Enable | Refresh Cycles | I2C Control Byte | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 P4C1256-15JI Pyramid Semiconductor Corporation | In Stock | - | Datasheet | YES | 28 | 15 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | 0.300 INCH, PLASTIC, SOJ-28 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Active | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | compliant | - | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | ASYNCHRONOUS | 0.17 mA | 32KX8 | 3-STATE | 3.7592 mm | 8 | 0.01 A | 262144 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | 18.161 mm | 7.5184 mm | ||
 CAT24FC32API Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | 0.4 MHz | - | CATALYST SEMICONDUCTOR INC | - | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 2.5 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 3.6 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 4KX8 | - | 4.57 mm | 8 | 9e-7 A | 32768 bit | - | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | - | 1010DDDR | - | - | 9.59 mm | 7.62 mm | ||
 M12L2561616A-6TG Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 54 | 5.4 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
MU9C1640-55DC Music Semiconductors Inc | In Stock | - | Datasheet | YES | 44 | 85 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 1024 words | 1000 | 70 °C | - | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC44,.7SQ | LDCC44,.7SQ | SQUARE | CHIP CARRIER | Obsolete | - | No | 5 V | e0 | No | EAR99 | TIN LEAD | BIT MASKING; CACHECAM | 8542.32.00.41 | QUAD | J BEND | - | 1 | 1.27 mm | unknown | - | - | S-PQCC-J44 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.2 mA | 1KX64 | 3-STATE | - | 64 | 0.2 A | 65536 bit | - | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | NO | - | - | - | - | - | - | ||
M15F1G1664A-EFBG2C Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 96 | - | - | 2017-03-24 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 67108864 words | 64000000 | 85 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | - | Yes | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B96 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | - | 64MX16 | - | 1 mm | 16 | - | 1073741824 bit | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | YES | 13.5 mm | 7.5 mm | ||
P4C187-25CC Pyramid Semiconductor Corporation | In Stock | - | Datasheet | NO | 22 | 25 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | 65536 words | 64000 | 70 °C | - | CERAMIC | DIP | - | DIP22,.3 | RECTANGULAR | IN-LINE | Transferred | - | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | compliant | - | - | R-XDIP-T22 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.1 mA | 64KX1 | 3-STATE | - | 1 | 0.015 A | 65536 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | ||
M11B416256A-25J Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 40 | 25 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | 5 V | - | - | EAR99 | - | - | 8542.32.00.02 | DUAL | J BEND | - | - | 1.27 mm | unknown | - | - | R-PDSO-J40 | Not Qualified | - | COMMERCIAL | - | - | - | 0.21 mA | 256KX16 | 3-STATE | - | 16 | 0.002 A | 4194304 bit | - | - | COMMON | EDO DRAM | - | - | - | - | - | - | - | - | 512 | - | - | NO | - | - | ||
M12L16161A-7TG2K Elite Semiconductor Memory Technology Inc | In Stock | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
HXB15H4G160AF-13K Xi'an UniIC Semiconductors Co Ltd | In Stock | - | Datasheet | YES | 96 | - | - | - | XIAN UNILC SEMICONDUCTORS CO LTD | - | 268435456 words | 256000000 | 95 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B96 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | - | 256MX16 | - | 1.2 mm | 16 | - | 4294967296 bit | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | YES | 13.5 mm | 9 mm | ||
 MU9C8480BF-50TBC Music Semiconductors Inc | In Stock | - | Datasheet | YES | 64 | 50 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.6SQ,32 | QFP64,.6SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Contact Manufacturer | QFP | Yes | 3.3 V | - | - | EAR99 | - | - | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.8 mm | unknown | - | 64 | S-PQFP-G64 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | SYNCHRONOUS | 0.37 mA | 8KX64 | - | 1.45 mm | 64 | 0.002 A | 524288 bit | - | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | 14 mm | 14 mm | ||
M12L2561616A-6TIG2S Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 54 | 5.4 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PDSO-G54 | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
P4C1682-20PC Pyramid Semiconductor Corporation | In Stock | - | Datasheet | NO | 24 | 20 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | TRISTATE WRITE | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.1 mA | 4KX4 | 3-STATE | 5.334 mm | 4 | 0.015 A | 16384 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | 31.877 mm | 7.62 mm | ||
 CAT93C56UI-1.8 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 0.25 MHz | - | CATALYST SEMICONDUCTOR INC | 1 | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Transferred | SOIC | No | 5 V | e0 | - | EAR99 | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 128X16 | - | 1.1 mm | 16 | 0.00001 A | 2048 bit | - | SERIAL | - | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | - | 100 | SOFTWARE | - | 8 | - | - | - | - | - | 4.4 mm | 3 mm | ||
CAT24FC02LI Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | - | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 3 V | e3 | - | EAR99 | MATTE TIN | - | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 256X8 | - | 4.57 mm | 8 | 0.000001 A | 2048 bit | - | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | - | 1010DDDR | - | - | 9.59 mm | 7.62 mm | ||
CXK5864PN-15LL Sony Semiconductor | In Stock | - | Datasheet | NO | 28 | 150 ns | - | - | SONY CORP | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-PDIP-T28 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.055 mA | 8KX8 | 3-STATE | - | 8 | 0.00004 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | - | ||
CAT64LC20JI-TE13 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 1 MHz | - | CATALYST SEMICONDUCTOR INC | - | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 128X16 | 3-STATE | 1.75 mm | 16 | 0.000003 A | 2048 bit | - | SERIAL | - | EEPROM | SPI | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
CAT34WC02PI-1.8 Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | - | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | EAR99 | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; HARDWARE WRITE PROTECT | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 6 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 256X8 | - | 4.57 mm | 8 | 0.0009 A | 2048 bit | - | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | 1010DDDR | - | - | 9.27 mm | 7.62 mm | ||
 CXK5864BSP-12L Sony Semiconductor | In Stock | - | Datasheet | NO | 28 | 120 ns | - | - | SONY CORP | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 8KX8 | 3-STATE | 4.4 mm | 8 | 0.000035 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 2 V | - | YES | - | - | - | - | 35.1 mm | 7.62 mm | ||
M15F1G1664A-ADBG Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 96 | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 67108864 words | 64000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B96 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | - | 64MX16 | - | 1.2 mm | 16 | - | 1073741824 bit | - | - | - | DDR3 DRAM | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | ||
 P4C198A-45CMB Pyramid Semiconductor Corporation | In Stock | - | Datasheet | NO | 24 | 45 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-24 | - | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | - | TIN LEAD | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | 24 | R-CDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 16KX4 | - | 5.08 mm | 4 | - | 65536 bit | MIL-STD-883 Class B | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | 7.62 mm |