- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- ECCN Code
- HTS Code
- Memory IC Type
- Package Description
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
Attribute column
Manufacturer
Taiwan Semiconductor Memory
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Reverse Pinout | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 M12L2561616A-6TIG2S Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 54 | 5.4 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PDSO-G54 | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
CXK5864PN-15LL Sony Semiconductor | In Stock | - | Datasheet | NO | 28 | 150 ns | - | - | SONY CORP | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-PDIP-T28 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.055 mA | 8KX8 | 3-STATE | - | 8 | 0.00004 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | - | - | - | ||
 CAT64LC20JI-TE13 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 1 MHz | - | CATALYST SEMICONDUCTOR INC | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 128X16 | 3-STATE | 1.75 mm | 16 | 0.000003 A | 2048 bit | SERIAL | - | EEPROM | SPI | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
 CAT34WC02PI-1.8 Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | EAR99 | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; HARDWARE WRITE PROTECT | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 6 V | INDUSTRIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 256X8 | - | 4.57 mm | 8 | 0.0009 A | 2048 bit | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | 1010DDDR | - | - | - | - | - | 9.27 mm | 7.62 mm | ||
CAT93C56KI Catalyst Semiconductor | In Stock | - | Datasheet | YES | 8 | - | 0.5 MHz | - | CATALYST SEMICONDUCTOR INC | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | No | 5 V | e0 | No | EAR99 | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 128X16 | - | 2.03 mm | 16 | 0.00001 A | 2048 bit | SERIAL | - | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 10 ms | 100 | SOFTWARE | - | 8 | - | - | - | - | - | - | - | 5.3 mm | 5.25 mm | ||
CAT24C01P-2.7 Catalyst Semiconductor | In Stock | - | Datasheet | NO | 8 | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | 128 words | 128 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 6 V | COMMERCIAL | 2.7 V | - | SYNCHRONOUS | 0.003 mA | 128X8 | OPEN-DRAIN | 4.57 mm | 8 | 9e-7 A | 1024 bit | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | - | - | - | - | 1010DDDR | - | - | - | - | - | 9.36 mm | 7.62 mm | ||
M15F1G1664A-EFBG2C Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 96 | - | - | 2017-03-24 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 67108864 words | 64000000 | 85 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | - | Yes | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B96 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | - | 64MX16 | - | 1 mm | 16 | - | 1073741824 bit | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | - | YES | 13.5 mm | 7.5 mm | ||
M12L2561616A-6BG2S Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 54 | 5.4 ns | 166 MHz | 2017-08-17 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | VFBGA | BGA-54 | BGA54,6X9,30 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | S-PBGA-B54 | - | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.08 mA | 16MX16 | 3-STATE | 1 mm | 16 | - | 268435456 bit | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | 3 V | - | 8192 | - | 1,2,4,8 | 1,2,4,8 | FOUR BANK PAGE BURST | NO | YES | 8 mm | 8 mm |