- Ihs Manufacturer
- Part Life Cycle Code
- Reach Compliance Code
- Memory IC Type
- ECCN Code
- HTS Code
- Package Description
- JESD-30 Code
- Memory Density
- Memory Width
- Number of Terminals
- Number of Words
Attribute column
Manufacturer
Taiwan Semiconductor Memory - Modules
Product | Inventory | Pricing(USD) | Quantity | Datasheet | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width |
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 EN29GL064H-70ZIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 56 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | - | 3 V | - | - | EAR99 | - | - | HIGHEST ADDRESS SECTOR PROTECTED | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.5 mm | unknown | - | - | R-PDSO-G56 | - | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | - | 4MX16 | - | 1.2 mm | 16 | - | 67108864 bit | PARALLEL | FLASH | 3 V | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | 18.4 mm | 14 mm | ||
 CAT28F020NA-12 Catalyst Semiconductor | In Stock | - | Datasheet | YES | 32 | 120 ns | - | - | CATALYST SEMICONDUCTOR INC | 3 | 262144 words | 256000 | 105 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC32,.5X.6 | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | Transferred | QFJ | No | 5 V | e0 | - | EAR99 | NOR TYPE | TIN LEAD | - | 8542.32.00.51 | QUAD | J BEND | - | 1 | 1.27 mm | unknown | - | 32 | R-PQCC-J32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 256KX8 | - | 3.55 mm | 8 | 0.00001 A | 2097152 bit | PARALLEL | FLASH | 12 V | - | 100000 Write/Erase Cycles | - | - | - | - | NO | NO | YES | - | - | - | - | - | 13.97 mm | 11.43 mm | ||
EN25S64A-104RIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP-8 | SOP8,.25 | SQUARE | SMALL OUTLINE, VERY THIN PROFILE | Active | - | Yes | 1.8 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | - | S-PDSO-G8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.03 mA | 8MX8 | 3-STATE | 1 mm | 8 | 0.000035 A | 67108864 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 5.28 mm | 5.28 mm | ||
ES29LV320DB-90TGI Excel (Suzhou) Semiconductor Co Ltd | In Stock | - | Datasheet | YES | 48 | 90 ns | - | - | EXCEL SEMICONDUCTOR INC | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | Yes | - | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | 260 | - | 0.5 mm | unknown | - | - | R-PDSO-G48 | Not Qualified | - | INDUSTRIAL | - | - | 0.03 mA | 2MX16 | - | - | 16 | 0.00001 A | 33554432 bit | PARALLEL | FLASH | - | - | - | - | - | - | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | - | - | ||
EN25QH32B-104WIP2B Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | 2017-08-07 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | Yes | 3 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | - | R-PDSO-N8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | 3-STATE | 0.8 mm | 8 | 0.00002 A | 33554432 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
F59L1G81LB-25BG2M Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | - | - | - | - | 2017-08-31 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | - | - | - | , | - | - | - | Active | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.51 | - | - | NOT SPECIFIED | - | - | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FLASH | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
EN29LV160CT-70BIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | - | - | 3 V | - | - | EAR99 | NOR TYPE | - | TOP BOOT SECTOR | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B48 | - | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.016 mA | 1MX16 | - | 1.3 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | - | 100000 Write/Erase Cycles | 0.00007 ms | 20 | - | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 8 mm | 6 mm | ||
EN25S80B-104XFIP2S Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | 2017-07-31 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | USON-8 | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | - | 1.8 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | - | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.0095 mA | 1MX8 | 3-STATE | 0.5 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 1.8 V | QSPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 3 mm | 2 mm | ||
EN25F20A-104XIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | USON-8 | - | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | - | 3 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | - | 1 | 0.5 mm | unknown | - | - | R-PDSO-N8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | - | 256KX8 | - | 0.6 mm | 8 | - | 2097152 bit | SERIAL | FLASH | 2.7 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3 mm | 2 mm | ||
EN29SL800B-90MIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 48 | 90 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA48,6X11,20 | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | Yes | 1.8 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.5 mm | unknown | - | - | R-PBGA-B48 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | - | 0.73 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 1.8 V | - | 100000 Write/Erase Cycles | - | - | - | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | - | 6 mm | 5 mm | ||
EN25S64A-104HIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP-8 | SOP8,.3 | SQUARE | SMALL OUTLINE | Active | - | Yes | 1.8 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | - | S-PDSO-G8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.03 mA | 8MX8 | 3-STATE | 2.2 mm | 8 | 0.000035 A | 67108864 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 5.275 mm | 5.275 mm | ||
ES29LV160DB-70RTC Excel (Suzhou) Semiconductor Co Ltd | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | EXCEL SEMICONDUCTOR INC | 3 | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | - | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | No | 3.3 V | e0 | - | EAR99 | NOR TYPE | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | 240 | - | 0.5 mm | unknown | - | - | R-PDSO-G48 | Not Qualified | - | COMMERCIAL | - | - | 0.03 mA | 1MX16 | - | - | 16 | 0.00001 A | 16777216 bit | PARALLEL | FLASH | - | - | - | - | - | - | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | - | - | ||
EN25S20A-104WIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | VDFN-8 | - | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | Yes | 1.8 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | - | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | - | 256KX8 | - | 0.8 mm | 8 | - | 2097152 bit | SERIAL | FLASH | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
F50L1G41LB-104YG2ME Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 134217728 words | 128000000 | 70 °C | - | UNSPECIFIED | VSON | WSON-8 | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Active | - | Yes | 3.3 V | - | - | - | SLC NAND TYPE | - | - | - | DUAL | NO LEAD | - | 1 | 1.27 mm | unknown | - | - | R-XDSO-N8 | - | 3.6 V | - | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX8 | 3-STATE | 0.8 mm | 8 | 0.00005 A | 1073741824 bit | SERIAL | FLASH | 3.3 V | SPI | 100000 Write/Erase Cycles | - | 10 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 8 mm | 6 mm | ||
ES29LV800EB-70TGI Excel (Suzhou) Semiconductor Co Ltd | In Stock | - | Datasheet | YES | 48 | 70 ns | - | - | EXCEL SEMICONDUCTOR INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | Yes | - | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | - | - | 0.5 mm | unknown | - | - | R-PDSO-G48 | Not Qualified | - | INDUSTRIAL | - | - | 0.03 mA | 512KX16 | - | - | 16 | 0.00001 A | 8388608 bit | PARALLEL | FLASH | - | - | 100000 Write/Erase Cycles | - | - | - | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | - | - | - | ||
F59L1G81LA-25BG2Y Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 63 | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 134217728 words | 128000000 | 70 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 3.3 V | - | - | EAR99 | - | - | - | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B63 | - | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | - | 128MX8 | - | 1 mm | 8 | - | 1073741824 bit | PARALLEL | FLASH | 3.3 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 11 mm | 9 mm | ||
EN25S40A-104XFIP2S Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | USON-8 | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | Yes | 1.8 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | - | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.018 mA | 512KX8 | 3-STATE | 0.5 mm | 8 | 0.00001 A | 4194304 bit | SERIAL | FLASH | 1.8 V | QSPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 3 mm | 2 mm | ||
 CAT28F001PI-12 Catalyst Semiconductor | In Stock | - | Datasheet | NO | 32 | 120 ns | - | - | CATALYST SEMICONDUCTOR INC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-32 | - | RECTANGULAR | IN-LINE | Transferred | DIP | No | 5 V | e0 | No | EAR99 | NOR TYPE | TIN LEAD | DEEP POWER-DOWN | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 32 | R-PDIP-T32 | Not Qualified | - | INDUSTRIAL | - | ASYNCHRONOUS | - | 128KX8 | 3-STATE | 5.08 mm | 8 | - | 1048576 bit | PARALLEL | FLASH | 12 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 42.037 mm | 15.24 mm | ||
F59D1G161MA-45BG2L Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 63 | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 67108864 words | 64000000 | 70 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.8 V | - | - | EAR99 | - | - | - | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B63 | - | 1.95 V | COMMERCIAL | 1.7 V | ASYNCHRONOUS | - | 64MX16 | - | 1 mm | 16 | - | 1073741824 bit | PARALLEL | FLASH | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 11 mm | 9 mm | ||
EN25F10A-104WIP Elite Semiconductor Memory Technology Inc | In Stock | - | Datasheet | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.25 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | Yes | 3 V | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | - | R-PDSO-N8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.028 mA | 128KX8 | 3-STATE | 0.8 mm | 8 | 0.00002 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 6 mm | 5 mm |